45:
521:
module using a process technology with a size between 30 nm and 39 nm. The module could reportedly achieve data transfer rates of 2.133 Gbit/s at 1.2V, compared to 1.35V and 1.5V DDR3 DRAM at an equivalent "30 nm-class" process technology with speeds of up to 1.6 Gbit/s. The
546:
architecture, was released on 16 March 2010 as the Core i7 980x
Extreme Edition, retailing for approximately US$ 1,000. Intel's lower-end 6-core, the i7-970, was released in late July 2010, priced at approximately US$ 900. Intel's "32nm" process has a transistor density of 7.11 million transistors
510:
gate dielectric and metal gate, and contained almost two billion transistors. 193 nm immersion lithography was used for the critical layers, while 193 nm or 248 nm dry lithography was used on less critical layers. The critical pitch was 112.5 nm.
440:
Since at least 1997, "process nodes" have been named purely on a marketing basis, and have no relation to the dimensions on the integrated circuit; neither gate length, nor metal pitch, nor gate pitch on a "32nm" device is thirty-two nanometers.
554:
architecture, were released in
October 2011. The technology utilised a "32 nm" SOI process, two CPU cores per module, and up to four modules, ranging from a quad-core design costing approximately US$ 130 to a $ 280 eight-core design.
946:
1137:
506:
Intel
Corporation revealed its first "32 nm" test chips to the public on 18 September 2007 at the Intel Developer Forum. The test chips had a cell size of 0.182 μm, used a second-generation
1024:
Steen, S.; et al. (2006). "Hybrid lithography: The marriage between optical and e-beam lithography. A method to study process integration and device performance for advanced device nodes".
534:
Intel's Core i3 and i5 processors, released in
January 2010, were among the first mass-produced processors to use "32 nm" technology. Intel's second-generation Core processors, codenamed
356:
950:
884:
705:
906:
1083:
587:. Intel began mass production of "22 nm" semiconductors in late 2011, and announced the release of its first commercial "22 nm" devices in April 2012.
483:
on the same layer. It was observed that the cell's sensitivity to input voltage fluctuations degraded significantly at such a small scale. In
October 2006, the
584:
349:
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503:
similarly used double patterning combined with immersion lithography to produce a "32 nm" node 0.183 μm six-transistor SRAM cell in 2005.
342:
971:
647:
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932:
550:
AMD also released "32 nm" SOI processors in the early 2010s. AMD's FX Series processors, codenamed
Zambezi and based on AMD's
484:
881:
620:"Toshiba Makes Major Advances in NAND Flash Memory with 3-bit-per-cell 32nm generation and with 4-bit-per-cell 43nm technology"
1051:
809:
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module used pseudo open drain (POD) technology, specially adapted to allow DDR4 SDRAM to consume just half the current of
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499:
tools to reduce memory cell area offset some of the cost advantages of moving to this node from the 45 nm node.
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32:
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17:
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947:"Ambarella A7L Enables the Next Generation of Digital Still Cameras with 1080p60 Fluid Motion Video"
724:
725:"Exclusive: Is Intel Really Starting To Lose Its Process Lead? 7nm Node Slated For Release in 2022"
394:
706:"14nm, 7nm, 5nm: How low can CMOS go? It depends if you ask the engineers or the economists..."
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324:
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393:" refers to the average half-pitch (i.e., half the distance between identical features) of a
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8:
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produced commercial microchips using the "32 nm" process in the early 2010s. IBM and the
664:
538:, also used the "32 nm" manufacturing process. Intel's 6-core processor, codenamed
496:
488:
418:
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metal gate process. Intel began selling its first "32 nm" processors using the
107:
1033:
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480:
314:
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796:"IMEC demonstrates feasibility of double patterning immersion litho for 32nm node"
467:
Prototypes using "32 nm" technology first emerged in the mid-2000s. In 2004,
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743:"Life at 10nm. (Or is it 7nm?) And 3nm - Views on Advanced Silicon Platforms"
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The successor to "32 nm" technology was the "22 nm" node, per the
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In
January 2011, Samsung completed development of the industry's first
449:
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52:
487:(IMEC) demonstrated a 32 nm flash patterning capability based on
1138:
International
Technology Roadmap for Semiconductors lithography nodes
390:
972:"Intel's CEO Discusses Q3 2011 Results - Earnings Call Transcript"
44:
765:. Tom'sHardware.com. 26 November 2011. Retrieved 5 December 2011.
624:
567:
407:
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382:
974:. Seeking Alpha. 18 October 2011. Retrieved 14 February 2013.
933:"Intel's 10nm Cannon Lake and Core i3-8121U Deep Dive Review"
518:
1109:
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Sony, IBM, and
Toshiba partnering on semiconductor research
1000:
798:. PhysOrg.com. 18 October 2006. Retrieved 17 December 2011.
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523:
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cell with a poly gate pitch of 135 nm, produced using
378:
294:
763:"Report: Intel Scheduling 22 nm Ivy Bridge for April 2012"
562:
announced the availability of the "32 nm"-based A7L
468:
775:"Intel's Ivy Bridge chips launch using '3D transistors'"
455:
The "32 nm" process was superseded by commercial
495:. The necessity of introducing double patterning and
585:
International
Technology Roadmap for Semiconductors
949:. Ambarella.com. 26 September 2011. Archived from
1084:Samsung self-aligned double patterning technology
654:. White Paper. Intel.com. Retrieved 18 June 2013.
1129:
1062:IBM and AMD partnering on semiconductor research
882:"Intel Debuts 32-NM Westmere Desktop Processors"
984:"Intel beats analysts' first quarter forecasts"
907:"Intel's 6-core 32nm processors arriving soon"
986:. BBC. 17 April 2012. Retrieved 18 June 2013.
904:
895:. 7 January 2010. Retrieved 17 December 2011.
777:. BBC. 23 April 2012. Retrieved 18 June 2013.
566:circuit for digital still cameras, providing
350:
1052:Chipmakers gear up for manufacturing hurdles
855:
810:"IBM sees immersion at 22nm, pushes out EUV"
807:
758:
756:
833:H-Y. Chen et al., Symp. on VLSI Tech. 2005.
680:"A Brief History of Process Node Evolution"
648:Gate Dielectric Scaling for CMOS: from SiO
612:
357:
343:
753:
485:Interuniversity Microelectronics Centre
14:
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1023:
646:Intel (Architecture & Silicon).
578:
570:high-definition video capabilities.
530:Processors using "32 nm" technology
462:
24:
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703:
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25:
1149:
1045:
905:Sal Cangeloso (4 February 2010).
858:"Samsung trials DDR4 DRAM module"
808:Mark LaPedus (23 February 2007).
573:
665:"No More Nanometers – EEJournal"
547:per square milimeter (MTr/mm2).
387:semiconductor device fabrication
43:
989:
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856:Peter Clarke (4 January 2011).
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526:when reading and writing data.
786:D. M. Fried et al., IEDM 2004.
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452:based on the "32 nm" process.
429:also developed a "32 nm"
13:
1:
606:
471:demonstrated a 0.143 μm
448:is an intermediate half-node
652:/PolySi to High-K/Metal-Gate
7:
10:
1154:
909:. Geek.com. Archived from
397:at this technology level.
373:is the step following the
1038:10.1016/j.mee.2006.01.181
477:electron-beam lithography
413:memory chips with the "32
1079:Intel 32 nm process
1106:manufacturing processes
846:. Vol. 4889, no. 1313.
403:produced commercial 32
595:nm", jumping from "40
493:immersion lithography
435:Westmere architecture
417:nm" process in 2009.
731:. 10 September 2016.
459:technology in 2012.
1074:Slashdot discussion
953:on 10 November 2011
842:F. T. Chen (2002).
558:In September 2011,
437:on 7 January 2010.
1067:2006-07-16 at the
887:2010-03-17 at the
628:. 11 February 2009
599:nm" in 2008 to "28
1126:
1125:
1116:Succeeded by
997:"28nm Technology"
678:Shukla, Priyank.
579:28 nm & 22 nm
542:and built on the
489:double patterning
367:
366:
16:(Redirected from
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1092:Preceded by
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749:. 12 March 2018.
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315:Transistor count
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591:bypassed "32
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536:Sandy Bridge
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446:"28 nm" node
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399:
371:"32 nm" node
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368:
272: ~ 2025
254: – 2022
245: – 2020
236: – 2018
227: – 2016
218: – 2014
209: – 2012
200: – 2010
191: – 2009
188:
182: – 2007
173: – 2005
164: – 2003
155: – 2001
149: – 1999
143: – 1996
137: – 1993
131: – 1990
125: – 1987
119: – 1984
110: – 1981
101: – 1977
92: – 1974
83: – 1971
74: – 1968
26:
18:32 nanometer
957:11 November
917:11 November
867:11 November
819:11 November
710:ExtremeTech
395:memory cell
310:Moore's law
153:130 nm
147:180 nm
141:250 nm
135:350 nm
129:600 nm
123:800 nm
108:1.5 μm
37:fabrication
1120:22 nm
1096:45 nm
844:Proc. SPIE
607:References
450:die shrink
411:NAND flash
304:multi-gate
285:Half-nodes
225:10 nm
216:14 nm
207:22 nm
198:28 nm
189:32 nm
180:45 nm
171:65 nm
162:90 nm
81:10 μm
72:20 μm
552:Bulldozer
391:nanometre
270:2 nm
252:3 nm
243:5 nm
234:7 nm
117:1 μm
99:3 μm
90:6 μm
1132:Category
1065:Archived
885:Archived
862:EE Times
814:EE Times
544:Westmere
540:Gulftown
497:hyper-NA
325:Industry
1006:30 June
632:21 June
625:Toshiba
568:1080p60
457:"22 nm"
401:Toshiba
290:Density
263:Future
1103:MOSFET
689:9 July
601:
597:
593:
508:high-κ
431:high-κ
415:
405:
389:. "32-
383:MOSFET
300:Device
105:
35:device
519:SDRAM
419:Intel
1110:CMOS
1008:2019
1001:TSMC
959:2011
919:2011
869:2011
821:2011
691:2019
634:2019
589:TSMC
524:DDR3
516:DDR4
501:TSMC
491:and
479:and
473:SRAM
444:The
421:and
379:CMOS
369:The
295:CMOS
1034:doi
469:IBM
423:AMD
408:GiB
377:in
1134::
1030:83
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891:.
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