34:
510:
module using a process technology with a size between 30 nm and 39 nm. The module could reportedly achieve data transfer rates of 2.133 Gbit/s at 1.2V, compared to 1.35V and 1.5V DDR3 DRAM at an equivalent "30 nm-class" process technology with speeds of up to 1.6 Gbit/s. The
535:
architecture, was released on 16 March 2010 as the Core i7 980x
Extreme Edition, retailing for approximately US$ 1,000. Intel's lower-end 6-core, the i7-970, was released in late July 2010, priced at approximately US$ 900. Intel's "32nm" process has a transistor density of 7.11 million transistors
499:
gate dielectric and metal gate, and contained almost two billion transistors. 193 nm immersion lithography was used for the critical layers, while 193 nm or 248 nm dry lithography was used on less critical layers. The critical pitch was 112.5 nm.
429:
Since at least 1997, "process nodes" have been named purely on a marketing basis, and have no relation to the dimensions on the integrated circuit; neither gate length, nor metal pitch, nor gate pitch on a "32nm" device is thirty-two nanometers.
543:
architecture, were released in
October 2011. The technology utilised a "32 nm" SOI process, two CPU cores per module, and up to four modules, ranging from a quad-core design costing approximately US$ 130 to a $ 280 eight-core design.
935:
1126:
495:
Intel
Corporation revealed its first "32 nm" test chips to the public on 18 September 2007 at the Intel Developer Forum. The test chips had a cell size of 0.182 μm, used a second-generation
1013:
Steen, S.; et al. (2006). "Hybrid lithography: The marriage between optical and e-beam lithography. A method to study process integration and device performance for advanced device nodes".
523:
Intel's Core i3 and i5 processors, released in
January 2010, were among the first mass-produced processors to use "32 nm" technology. Intel's second-generation Core processors, codenamed
345:
939:
873:
694:
895:
1072:
576:. Intel began mass production of "22 nm" semiconductors in late 2011, and announced the release of its first commercial "22 nm" devices in April 2012.
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on the same layer. It was observed that the cell's sensitivity to input voltage fluctuations degraded significantly at such a small scale. In
October 2006, the
573:
338:
415:
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similarly used double patterning combined with immersion lithography to produce a "32 nm" node 0.183 μm six-transistor SRAM cell in 2005.
331:
960:
636:
1053:
921:
539:
AMD also released "32 nm" SOI processors in the early 2010s. AMD's FX Series processors, codenamed
Zambezi and based on AMD's
473:
870:
609:"Toshiba Makes Major Advances in NAND Flash Memory with 3-bit-per-cell 32nm generation and with 4-bit-per-cell 43nm technology"
1040:
798:
668:
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module used pseudo open drain (POD) technology, specially adapted to allow DDR4 SDRAM to consume just half the current of
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tools to reduce memory cell area offset some of the cost advantages of moving to this node from the 45 nm node.
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936:"Ambarella A7L Enables the Next Generation of Digital Still Cameras with 1080p60 Fluid Motion Video"
713:
714:"Exclusive: Is Intel Really Starting To Lose Its Process Lead? 7nm Node Slated For Release in 2022"
383:
695:"14nm, 7nm, 5nm: How low can CMOS go? It depends if you ask the engineers or the economists..."
411:
313:
481:
382:" refers to the average half-pitch (i.e., half the distance between identical features) of a
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produced commercial microchips using the "32 nm" process in the early 2010s. IBM and the
653:
527:, also used the "32 nm" manufacturing process. Intel's 6-core processor, codenamed
485:
477:
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metal gate process. Intel began selling its first "32 nm" processors using the
96:
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303:
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785:"IMEC demonstrates feasibility of double patterning immersion litho for 32nm node"
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Prototypes using "32 nm" technology first emerged in the mid-2000s. In 2004,
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732:"Life at 10nm. (Or is it 7nm?) And 3nm - Views on Advanced Silicon Platforms"
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The successor to "32 nm" technology was the "22 nm" node, per the
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In
January 2011, Samsung completed development of the industry's first
438:
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41:
476:(IMEC) demonstrated a 32 nm flash patterning capability based on
1127:
International
Technology Roadmap for Semiconductors lithography nodes
379:
961:"Intel's CEO Discusses Q3 2011 Results - Earnings Call Transcript"
33:
754:. Tom'sHardware.com. 26 November 2011. Retrieved 5 December 2011.
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556:
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963:. Seeking Alpha. 18 October 2011. Retrieved 14 February 2013.
922:"Intel's 10nm Cannon Lake and Core i3-8121U Deep Dive Review"
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1098:
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Sony, IBM, and
Toshiba partnering on semiconductor research
989:
787:. PhysOrg.com. 18 October 2006. Retrieved 17 December 2011.
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512:
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cell with a poly gate pitch of 135 nm, produced using
367:
283:
752:"Report: Intel Scheduling 22 nm Ivy Bridge for April 2012"
551:
announced the availability of the "32 nm"-based A7L
457:
764:"Intel's Ivy Bridge chips launch using '3D transistors'"
444:
The "32 nm" process was superseded by commercial
484:. The necessity of introducing double patterning and
574:
International
Technology Roadmap for Semiconductors
938:. Ambarella.com. 26 September 2011. Archived from
1073:Samsung self-aligned double patterning technology
643:. White Paper. Intel.com. Retrieved 18 June 2013.
1118:
1051:IBM and AMD partnering on semiconductor research
871:"Intel Debuts 32-NM Westmere Desktop Processors"
973:"Intel beats analysts' first quarter forecasts"
896:"Intel's 6-core 32nm processors arriving soon"
975:. BBC. 17 April 2012. Retrieved 18 June 2013.
893:
884:. 7 January 2010. Retrieved 17 December 2011.
766:. BBC. 23 April 2012. Retrieved 18 June 2013.
555:circuit for digital still cameras, providing
339:
1041:Chipmakers gear up for manufacturing hurdles
844:
799:"IBM sees immersion at 22nm, pushes out EUV"
796:
747:
745:
822:H-Y. Chen et al., Symp. on VLSI Tech. 2005.
669:"A Brief History of Process Node Evolution"
637:Gate Dielectric Scaling for CMOS: from SiO
601:
346:
332:
742:
474:Interuniversity Microelectronics Centre
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1012:
635:Intel (Architecture & Silicon).
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559:high-definition video capabilities.
519:Processors using "32 nm" technology
451:
13:
1006:
692:
666:
14:
1138:
1034:
894:Sal Cangeloso (4 February 2010).
847:"Samsung trials DDR4 DRAM module"
797:Mark LaPedus (23 February 2007).
562:
654:"No More Nanometers – EEJournal"
536:per square milimeter (MTr/mm2).
376:semiconductor device fabrication
32:
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845:Peter Clarke (4 January 2011).
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515:when reading and writing data.
775:D. M. Fried et al., IEDM 2004.
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441:based on the "32 nm" process.
418:also developed a "32 nm"
1:
595:
460:demonstrated a 0.143 μm
437:is an intermediate half-node
641:/PolySi to High-K/Metal-Gate
7:
10:
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898:. Geek.com. Archived from
386:at this technology level.
362:is the step following the
1027:10.1016/j.mee.2006.01.181
466:electron-beam lithography
402:memory chips with the "32
1068:Intel 32 nm process
1095:manufacturing processes
835:. Vol. 4889, no. 1313.
392:produced commercial 32
584:nm", jumping from "40
482:immersion lithography
424:Westmere architecture
406:nm" process in 2009.
720:. 10 September 2016.
448:technology in 2012.
1063:Slashdot discussion
942:on 10 November 2011
831:F. T. Chen (2002).
547:In September 2011,
426:on 7 January 2010.
1056:2006-07-16 at the
876:2010-03-17 at the
617:. 11 February 2009
588:nm" in 2008 to "28
1115:
1114:
1105:Succeeded by
986:"28nm Technology"
667:Shukla, Priyank.
568:28 nm & 22 nm
531:and built on the
478:double patterning
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355:
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1081:Preceded by
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1021:(4–9): 754–761.
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619:. Retrieved
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525:Sandy Bridge
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435:"28 nm" node
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360:"32 nm" node
359:
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261: ~ 2025
243: – 2022
234: – 2020
225: – 2018
216: – 2016
207: – 2014
198: – 2012
189: – 2010
180: – 2009
177:
171: – 2007
162: – 2005
153: – 2003
144: – 2001
138: – 1999
132: – 1996
126: – 1993
120: – 1990
114: – 1987
108: – 1984
99: – 1981
90: – 1977
81: – 1974
72: – 1971
63: – 1968
15:
946:11 November
906:11 November
856:11 November
808:11 November
699:ExtremeTech
384:memory cell
299:Moore's law
142:130 nm
136:180 nm
130:250 nm
124:350 nm
118:600 nm
112:800 nm
97:1.5 μm
26:fabrication
1109:22 nm
1085:45 nm
833:Proc. SPIE
596:References
439:die shrink
400:NAND flash
293:multi-gate
274:Half-nodes
214:10 nm
205:14 nm
196:22 nm
187:28 nm
178:32 nm
169:45 nm
160:65 nm
151:90 nm
70:10 μm
61:20 μm
541:Bulldozer
380:nanometre
259:2 nm
241:3 nm
232:5 nm
223:7 nm
106:1 μm
88:3 μm
79:6 μm
1121:Category
1054:Archived
874:Archived
851:EE Times
803:EE Times
533:Westmere
529:Gulftown
486:hyper-NA
314:Industry
995:30 June
621:21 June
614:Toshiba
557:1080p60
446:"22 nm"
390:Toshiba
279:Density
252:Future
1092:MOSFET
678:9 July
590:
586:
582:
497:high-κ
420:high-κ
404:
394:
378:. "32-
372:MOSFET
289:Device
94:
24:device
508:SDRAM
408:Intel
1099:CMOS
997:2019
990:TSMC
948:2011
908:2011
858:2011
810:2011
680:2019
623:2019
578:TSMC
513:DDR3
505:DDR4
490:TSMC
480:and
468:and
462:SRAM
433:The
410:and
368:CMOS
358:The
284:CMOS
1023:doi
458:IBM
412:AMD
397:GiB
366:in
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