48:-stacked form, where half of the atoms lie directly over the center of a hexagon in the lower graphene sheet, and half of the atoms lie over an atom, or, less commonly, in the AA form, in which the layers are exactly aligned. In Bernal stacked graphene, twin boundaries are common; transitioning from AB to BA stacking. Twisted layers, where one layer is rotated relative to the other, have also been extensively studied.
85:. An experimental demonstration of a tunable bandgap in bilayer graphene came in 2009. In 2015 researchers observed 1D ballistic electron conducting channels at bilayer graphene domain walls. Another group showed that the band gap of bilayer films on silicon carbide could be controlled by selectively adjusting the carrier concentration.
330:
Electrical conductivity of 438 S/cm was obtained. Even after the infiltration of sulfur, electrical conductivity of 107 S cm/1 was retained. The graphene's unique porous structure allowed the effective storage of sulfur in the interlayer space, which gives rise to an efficient connection between the
306:
During CVD synthesis the protuberances produce intrinsically unstacked double-layer graphene after the removal of the nanoflakes. The presence of such protuberances on the surface can weaken the π-π interactions between graphene layers and thus reduce stacking. The bilayer graphene shows a specific
229:
or tunneling field effect transistors, exploiting the small energy gap. However, the energy gap is smaller than 250 meV and therefore requires the use of low operating voltage (< 250 mV), which is too small to obtain reasonable performance for a field effect transistor, but is very suited to the
249:
In 2017 an international group of researchers showed that bilayer graphene could act as a single-phase mixed conductor which exhibited Li diffusion faster than in graphite by an order of magnitude. In combination with the fast electronic conduction of graphene sheets, this system offers both ionic
1514:
Lu, Xiaobo; Stepanov, Petr; Yang, Wei; Xie, Ming; Aamir, Mohammed Ali; Das, Ipsita; Urgell, Carles; Watanabe, Kenji; Taniguchi, Takashi; Zhang, Guangyu; Bachtold, Adrian; MacDonald, Allan H.; Efetov, Dmitri K. (2019). "Superconductors, orbital magnets and correlated states in magic-angle bilayer
172:
that the amount of energy a free electron would require to tunnel between two graphene sheets radically changes at this angle. The graphene bilayer was prepared from exfoliated monolayers of graphene, with the second layer being manually rotated to a set angle with respect to the first layer. A
212:
Jarillo-Herrero has suggested that it may be possible to “...... imagine making a superconducting transistor out of graphene, which you can switch on and off, from superconducting to insulating. That opens many possibilities for quantum devices.” The study of such lattices has been dubbed
282:
Hybridization processes change the intrinsic properties of graphene and/or induce poor interfaces. In 2014 a general route to obtain unstacked graphene via facile, templated, catalytic growth was announced. The resulting material has a specific surface area of 1628 m2 g-1, is
54:
methods have been used to calculate the binding energies of AA- and AB-stacked bilayer graphene, which are 11.5(9) and 17.7(9) meV per atom, respectively. This is consistent with the observation that the AB-stacked structure is more stable than the AA-stacked structure.
294:
The material is made with a mesoporous nanoflake template. Graphene layers are deposited onto the template. The carbon atoms accumulate in the mesopores, forming protuberances that act as spacers to prevent stacking. The protuberance density is approximately
71:
and colleagues showed that large single-crystal bilayer graphene could be produced by oxygen-activated chemical vapour deposition. Later in the same year a Korean group reported the synthesis of wafer-scale single-crystal AB-stacked bilayer graphene
80:
Like monolayer graphene, bilayer graphene has a zero bandgap and thus behaves like a semimetal. In 2007, researchers predicted that a bandgap could be introduced if an electric displacement field were applied to the two layers: a so-called tunable
1362:, V Fatemi, A Demir,, S Fang, SL Tomarken, JY Luo, J D Sanchez-Yamagishi, K Watanabe, T Taniguchi, E Kaxiras, R C Ashoori, P Jarillo-Herrero (2018). "Correlated insulator behaviour at half-filling in magic-angle graphene superlattices".
153:
237:(TT). They operate at a lower operating voltage range (150 mV) than silicon transistors (500 mV). Bilayer graphene's energy band is unlike that of most semiconductors in that the electrons around the edges form a (high density)
2150:
Wu, Jiang-Bin; Zhang, Xin; Ijäs, Mari; Han, Wen-Peng; Qiao, Xiao-Fen; Li, Xiao-Li; Jiang, De-Sheng; Ferrari, Andrea C.; Tan, Ping-Heng (10 November 2014). "Resonant Raman spectroscopy of twisted multilayer graphene".
322:
yielded reversible capacities of 1034 and 734 mA h/g at discharge rates of 5 and 10 C, respectively. After 1000 cycles reversible capacities of some 530 and 380 mA h/g were retained at 5 and 10 C, with
368:
Quantitative determination of bilayer graphene's structural parameters---such as surface roughness, inter- and intralayer spacings, stacking order, and interlayer twist---is obtainable using 3D
387:
Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A.A. (2004). "Electric Field Effect in
Atomically Thin Carbon Film".
1358:
97:
and showed that this could be tuned by an electric field. In 2017 the observation of an even-denominator fractional quantum Hall state was reported in bilayer graphene.
207:
241:. This supplies sufficient electrons to increase current flow across the energy barrier. Bilayer graphene transistors use "electrical" rather than "chemical" doping.
274:. This was attributed to a graphite-diamond transition, and the behavior appeared to be unique to bilayer graphene. This could have applications in personal armor.
362:
and number of layers. Monitoring graphene's G and D peaks (around 1580 and 1360 cm) intensity gives direct information on the number of layers of the sample.
350:
imaging is an accurate and rapid technique to spatially characterize product quality. The vibrational modes of a system characterize it, providing information on
2254:
Sung, S.H.; Schnitzer, N.; Brown, L.; Park, J.; Hovden, R. (2019-06-25). "Stacking, strain, and twist in 2D materials quantified by 3D electron diffraction".
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Pinheiro, Gardênia; Fulcrand, Rémy; Kalbác, Martin; San-Miguel, Alfonso (April 28, 2020).
365:
It has been shown that the two graphene layers can withstand important strain or doping mismatch which ultimately should lead to their exfoliation.
1423:
230:
operation of tunnel field effect transistors, which according to theory from a paper in 2009 can operate with an operating voltage of only 100 mV.
1584:
2050:
Gaufrès, E.; Tang, N. Y.-Wa; Lapointe, F.; Cabana, J.; Nadon, M.-A.; Cottenye, N.; Raymond, F.; Szkopek, T.; Martel, R. (24 November 2013).
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and electronic conductivity within the same single-phase solid material. This has important implications for energy storage devices such as
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1611:"Twistronics: Manipulating the electronic properties of two-dimensional layered structures through their twist angle"
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In 2014 researchers described the emergence of complex electronic states in bilayer graphene, notably the fractional
2386:
1245:
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355:
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L Ju; et al. (2015). "Topological valley transport at bilayer graphene domain walls".
851:
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324:
238:
233:
In 2016 researchers proposed the use of bilayer graphene to increase the output voltage of
970:
491:
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8:
733:"Oxygen-activated growth and bandgap tunability of large single-crystal bilayer graphene"
641:
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51:
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1146:
1085:
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217:" and was inspired by earlier theoretical treatments of layered assemblies of graphene.
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2309:"Torsional periodic lattice distortions and diffraction of twisted 2D materials"
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1645:
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863:
1956:
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1841:"Ultra-low power graphene-based transistor could enable 100 GHz clock speeds"
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sulfur and graphene and prevents the diffusion of polysulfides into the
2211:
2182:
2021:
288:
33:
26:. One of the first reports of bilayer graphene was in the seminal 2004
1585:"Graphene superlattices could be used for superconducting transistors"
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717:
555:
469:
270:
temporarily become harder than diamond upon impact with the tip of an
674:
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311:, a pore size ranging from 2 to 7 nm and a total pore volume of
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in March 2018. The findings confirmed predictions made in 2011 by
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110:
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Bilayer graphene can be made by exfoliation from graphite or by
136:
126:
937:
2214:"Strain and Piezo-Doping Mismatch between Graphene Layers"
1244:
938:"Controlling the Electronic Structure of Bilayer Graphene"
2049:
640:
831:
154:
National
Institute for Materials Science, Tsukuba, Japan
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1608:
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303:. Graphene is deposited on both sides of the flakes.
179:
533:
1436:
105:Bilayer graphene showed the potential to realize a
1994:
201:
1725:
1513:
318:Using bilayer graphene as cathode material for a
2373:
2306:
258:Ultrahard carbon from epitaxial bilayer graphene
1777:
1670:
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1437:Bistritzer, R.; MacDonald, A. H. (2011-07-26).
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125:, but when they form an exciton, they become
16:Material consisting of two layers of graphene
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1422:: CS1 maint: multiple names: authors list (
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225:Bilayer graphene can be used to construct
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22:is a material consisting of two layers of
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44:Bilayer graphene can exist in the AB, or
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327:constants at 96 and 98%, respectively.
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268:bilayer graphene on silicon carbide
13:
1768:
1661:
75:
14:
2403:
2286:10.1103/PhysRevMaterials.3.064003
697:
631:
156:, have reported the discovery of
1839:Irving, Michael (May 24, 2016).
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264:the City University of New York
1277:10.1103/PhysRevLett.104.096802
971:11858/00-001M-0000-0011-03BF-3
782:
724:
609:10.1103/PhysRevLett.115.115501
570:
513:10.1103/physrevlett.102.015501
484:
441:
380:
1:
374:
2129:10.1016/j.carbon.2014.12.096
1780:IEEE Electron Device Letters
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58:
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245:Ultrafast lithium diffusion
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2408:
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1646:10.1103/PhysRevB.95.075420
864:10.1103/PhysRevB.75.155115
266:have shown that sheets of
202:{\displaystyle T_{c}=1.7K}
2256:Physical Review Materials
1957:10.1038/s41565-017-0023-9
1547:10.1038/s41586-019-1695-0
65:chemical vapor deposition
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1703:10.1109/led.2008.2010629
227:field effect transistors
221:Field effect transistors
173:critical temperature of
107:Bose–Einstein condensate
2387:Group IV semiconductors
1474:10.1073/pnas.1108174108
1247:Physical Review Letters
1216:10.1126/science.aao2521
1155:10.1126/science.1252875
1094:10.1126/science.1251003
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419:10.1126/science.1102896
285:electrically conductive
272:atomic force microscope
89:Emergent complex states
1896:10.1038/nnano.2017.108
803:10.1002/adma.201601760
760:10.1038/nnano.2015.322
320:lithium sulfur battery
203:
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2314:Nature Communications
2153:Nature Communications
1927:Nature Nanotechnology
1866:Nature Nanotechnology
1754:10.1038/nnano.2010.89
1734:Nature Nanotechnology
740:Nature Nanotechnology
252:lithium ion batteries
204:
142:Pablo Jarillo-Herrero
2382:Allotropes of carbon
370:electron diffraction
325:coulombic efficiency
239:van Hove singularity
177:
148:and colleagues from
2278:2019PhRvM...3f4003S
2175:2014NatCo...5.5309W
2121:2014arXiv1412.8049L
2068:2014NaPho...8...72G
2013:2014NatCo...5.3410Z
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1949:2018NatNa..13..133G
1888:2017NatNa..12..895K
1802:2009IEDL...30.1096F
1746:2010NatNa...5..487S
1695:2009IEDL...30..261F
1637:2017PhRvB..95g5420C
1589:The Next Big Future
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954:2006Sci...313..951O
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752:2016NatNa..11..426H
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601:2015PhRvL.115k5501M
548:2012NanoL..12.1609B
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411:2004Sci...306..666N
95:quantum Hall effect
52:Quantum Monte Carlo
2183:10.1038/ncomms6309
2022:10.1038/ncomms4410
235:tunnel transistors
199:
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1615:Physical Review B
1523:(7780): 653–657.
1338:10.1038/nphys1055
1192:(6363): 648–652.
948:(5789): 951–954.
834:Physical Review B
797:(37): 8177–8183.
718:10.1021/cm4021854
556:10.1021/nl204547v
470:10.1021/nl104000b
395:(5696): 666–669.
278:Porous nanoflakes
262:Researchers from
158:superconductivity
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2056:Nature Photonics
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893:(7549): 650–55.
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847:cond-mat/0612236
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653:(7248): 820–23.
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542:(3): 1609–1615.
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402:cond-mat/0410550
384:
339:Characterization
314:
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307:surface area of
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67:(CVD). In 2016,
20:Bilayer graphene
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