2253:
3315:
3349:
3255:
2544:, and that storing a charge or no charge on the MOS capacitor could represent the 1 and 0 of a bit, while the MOS transistor could control writing the charge to the capacitor. This led to his development of a single-transistor DRAM memory cell. In 1967, Dennard filed a patent under IBM for a single-transistor DRAM memory cell, based on MOS technology. This led to the first commercial DRAM IC chip, the
1949:(transferring data on both the rising and falling edges of the clock pulse). Extensions of this idea are the current (2012) technique being used to increase memory access rate and throughput. Since it is proving difficult to further increase the internal clock speed of memory chips, these chips increase the transfer rate by transferring more data words on each clock cycle
1784:
1740:, etc. As of 2014 the largest semiconductor memory chips hold a few gigabits of data, but higher capacity memory is constantly being developed. By combining several integrated circuits, memory can be arranged into a larger word length and/or address space than what is offered by each chip, often but not necessarily a
2416:
memory IC was the BJT 16-bit IBM SP95 fabricated in
December 1965, engineered by Paul Castrucci. While bipolar memory offered improved performance over magnetic-core memory, it could not compete with the lower price of magnetic-core memory, which remained dominant up until the late 1960s. Bipolar
2249:
to erase the existing data, and plugging it into a PROM programmer. The IC package has a small transparent "window" in the top to admit the UV light. It is often used for prototypes and small production run devices, where the program in it may have to be changed at the factory.
2189:) – This is designed to hold permanent data, and in normal operation is only read from, not written to. Although many types can be written to, the writing process is slow and usually all the data in the chip must be rewritten at once. It is usually used to store
2509:(DRAM). Bipolar SRAM was invented by Robert Norman at Fairchild Semiconductor in 1963, followed by the development of MOS SRAM by John Schmidt at Fairchild in 1964. SRAM became an alternative to magnetic-core memory, but required six MOS transistors for each
2435:
In 1957, Frosch and Derick were able to manufacture the first silicon dioxide field effect transistors at Bell Labs, the first transistors in which drain and source were adjacent at the surface, following this, a working MOSFET was build at Bell Labs.
1883:) – An older type of asynchronous DRAM which had faster access time than earlier types by being able to initiate a new memory access while data from the previous access was still being transferred. Used in the later part of the 1990s.
2152:) – This is a specialized type in which, instead of accessing data using an address, a data word is applied and the memory returns the location if the word is stored in the memory. It is mostly incorporated in other chips such as
2531:
in 1965. While it offered improved performance over magnetic-core memory, bipolar DRAM could not compete with the lower price of the then dominant magnetic-core memory. MOS technology is the basis for modern DRAM. In 1966, Dr.
2443:
in 1964. In addition to higher performance, MOS memory was cheaper and consumed less power than magnetic-core memory. This led to MOSFETs eventually replacing magnetic cores as the standard storage elements in computer memory.
1801:
loses its stored data when the power to the memory chip is turned off. However it can be faster and less expensive than non-volatile memory. This type is used for the main memory in most computers, since data is stored on the
2233:) – In this type the data is written into an existing PROM chip before it is installed in the circuit, but it can only be written once. The data is written by plugging the chip into a device called a PROM programmer.
3911:
The i1103 was manufactured on a 6-mask silicon-gate P-MOS process with 8 μm minimum features. The resulting product had a 2,400 µm, 2 memory cell size, a die size just under 10 mm, and sold for around $
2314:– In this type the writing process is intermediate in speed between EEPROMS and RAM memory; it can be written to, but not fast enough to serve as main memory. It is often used as a semiconductor version of a
4288:
2172:(NVM) preserves the data stored in it during periods when the power to the chip is turned off. Therefore, it is used for the memory in portable devices, which don't have disks, and for removable
3965:
The first commercial synchronous DRAM, the
Samsung 16-Mbit KM48SL2000, employs a single-bank architecture that lets system designers easily transition from asynchronous to synchronous systems.
1606:, which means that it takes the same amount of time to access any memory location, so data can be efficiently accessed in any random order. This contrasts with data storage media such as
2084:) – A development of SDRAM used in graphics cards that can transfer data at a faster rate. It consists of multiple memory chips stacked on top of one another, with a wider data bus.
1871:) – An older type of asynchronous DRAM that improved on previous types by allowing repeated accesses to a single "page" of memory to occur at a faster rate. Used in the mid-1990s.
3211:
1755:" in which data is stored in a memory word, replacing any data that was previously stored there. To increase data rate, in some of the latest types of memory chips such as
2221:) – In this type the data is programmed into the chip when the chip is manufactured, so it is only used for large production runs. It cannot be rewritten with new data.
1762:
In addition to standalone memory chips, blocks of semiconductor memory are integral parts of many computer and data processing integrated circuits. For example, the
1610:
which read and write data consecutively and therefore the data can only be accessed in the same sequence it was written. Semiconductor memory also has much faster
617:
3299:
3333:
2270:) – In this type the data can be rewritten electrically, while the chip is on the circuit board, but the writing process is slow. This type is used to hold
4311:
2923:
2266:
3239:
4144:
3269:
3564:
1685:. The memory cells are laid out in rectangular arrays on the surface of the chip. The 1-bit memory cells are grouped in small units called
1859:(rewritten) which requires additional circuitry. The refresh process is handled internally by the computer and is transparent to its user.
2612:
1851:
to store each bit. This type of RAM is the cheapest and highest in density, so it is used for the main memory in computers. However, the
4025:
4405:
3994:
2102:
on the chip, so that it acts like SRAM, allowing the external memory controller to be shut down to save energy. It is used in a few
4186:
Masuoka, F.; Momodomi, M.; Iwata, Y.; Shirota, R. (1987). "New ultra high density EPROM and flash EEPROM with NAND structure cell".
1933:
which can each work on a memory operation simultaneously. This became the dominant type of computer memory by about the year 2000.
3798:
3372:
2549:
1915:
612:
3758:
632:
1818:) – This has become a generic term for any semiconductor memory that can be written to, as well as read from, in contrast to ROM
1704:
applied to the chip's address pins, which specifies which word in the chip is to be accessed. If the memory address consists of
3843:
3782:
4191:
2888:
2241:
1622:, while access time for rotating storage such as hard disks is in the range of milliseconds. For these reasons it is used for
1506:
4118:
4019:
3988:
3541:
3516:
3448:
1047:
1987:) – An alternate double data rate memory standard that was used on some Intel systems but ultimately lost out to DDR SDRAM.
4440:
3896:
3657:
2537:
2245:
or UVEPROM) – In this type the data in it can be rewritten by removing the chip from the circuit board, exposing it to an
3195:
2380:). The earliest semiconductor memory dates back to the early 1960s, with bipolar memory, which used bipolar transistors.
4011:
Business
Intelligence: Second European Summer School, eBISS 2012, Brussels, Belgium, July 15–21, 2012, Tutorial Lectures
2132:, made of 4 to 6 transistors. SRAM is less dense and more expensive per bit than DRAM, but faster and does not require
1919:) – This added circuitry to the DRAM chip which synchronizes all operations with a clock signal added to the computer's
4245:
4039:
3638:. 1965 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. Vol. VIII. pp. 82–83.
3309:
3273:
3249:
2818:
1256:
208:
2540:
was working on MOS memory. While examining the characteristics of MOS technology, he found it was capable of building
253:
4448:
4388:
4361:
3904:
3178:
3047:
2288:
1538:
995:
938:
258:
17:
2494:
in the early 1970s. MOS memory overtook magnetic core memory as the dominant memory technology in the early 1970s.
106:
1321:
981:
925:
4305:
3402:
3343:
3205:
2962:
2859:
2833:
1007:
676:
488:
84:
2579:
in 1956, while working for the Arma
Division of the American Bosch Arma Corporation. In 1967, Dawon Kahng and
2572:
2229:
1356:
4508:
4498:
2749:
2506:
1835:
707:
602:
503:
4066:
Tarui, Y.; Hayashi, Y.; Nagai, K. (1972). "Electrically reprogrammable nonvolatile semiconductor memory".
2786:
2674:
2644:
2616:
2502:
2373:
2120:
664:
1724:
is given by 2, which is usually in power of two: 2, 4, 8, 16, 32, 64, 128, 256 and 512 and measured in
4297:
2707:
2148:
1555:. There are numerous different types using different semiconductor technologies. The two main types of
1499:
1296:
1195:
1067:
697:
686:
4140:
795:
2611:(electrically erasable PROM) was developed by Yasuo Tarui, Yutaka Hayashi and Kiyoko Naga at Japan's
2448:
558:
493:
388:
3607:
3591:
1855:
that stores the data in the memory cells slowly leaks out, so the memory cells must be periodically
4503:
2934:
2009:
1368:
1351:
840:
126:
4250:
4217:
4044:
3821:
3662:
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3145:
3112:
2742:
2664:
2524:
2440:
2418:
2409:
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2393:
2377:
2348:
2129:
1840:
1677:
1542:
1363:
1180:
903:
308:
143:
121:
101:
54:
2513:
of data. Commercial use of SRAM began in 1965, when IBM introduced their SP95 SRAM chip for the
3924:
3081:
3012:
2475:
2405:
2362:
1879:
1794:
like these. Additional memory can be added to the computer by plugging in additional modules.
1634:
1236:
453:
323:
263:
4378:
4351:
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3434:
3168:
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2080:
1492:
739:
657:
443:
248:
228:
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74:
39:
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1814:
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1435:
1303:
1082:
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578:
483:
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268:
131:
111:
94:
8:
4465:
2966:
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2829:
2790:
2703:
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1576:
1523:
1341:
1032:
970:
955:
822:
774:
627:
438:
136:
4079:
3750:
3465:
2802:
2723:
2715:
2711:
2401:
1822:, which can only be read. All semiconductor memory, not just RAM, has the property of
1642:
1626:, to hold the program and data the computer is currently working on, among other uses.
1549:
1441:
1406:
1052:
478:
463:
408:
403:
393:
368:
293:
3816:
2497:
The term "memory" when used with reference to computers most often refers to volatile
1945:) – This could transfer twice the data (two consecutive words) on each clock cycle by
4444:
4384:
4357:
4301:
4091:
4015:
3984:
3955:
3900:
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3339:
3305:
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3201:
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2533:
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2300:
2246:
1118:
1113:
1037:
1002:
856:
834:
733:
692:
595:
433:
158:
3270:"Annual Semiconductor Sales Increase 21.6 Percent, Top $ 400 Billion for First Time"
2252:
1751:", in which the data contents of a memory word is read out (nondestructively), and "
4513:
4199:
4110:
4083:
3697:
3639:
3504:
3477:
3040:
2844:
2592:
2568:
2319:
2185:
2094:
2014:
1453:
1447:
1373:
1336:
1326:
1291:
1103:
1057:
1025:
800:
783:
468:
428:
188:
173:
69:
59:
1923:. This allowed the chip to process multiple memory requests simultaneously using
1689:
which are accessed together as a single memory address. Memory is manufactured in
3950:
3786:
3436:
Semiconductors and the
Information Revolution: Magic Crystals that made IT Happen
3016:
3004:
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35:
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2719:
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2514:
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2153:
2133:
2099:
1946:
1904:
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1701:
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883:
745:
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328:
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183:
116:
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4203:
4095:
3636:
The use of insulated-gate field-effect transistors in digital storage systems
3612:
3496:
2901:
2873:
2866:
2863:
2778:
2761:
2620:
2456:
1848:
1823:
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1603:
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1900:
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1607:
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1412:
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1201:
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223:
3036:
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2738:
2734:
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2596:
2483:
2369:
2323:
2065:
2058:
2051:
2044:
2018:
1983:
1690:
1646:
1618:
of data can be written to or read from semiconductor memory within a few
1611:
1568:
1477:
1429:
863:
398:
338:
243:
3062:
3020:
2880:
2870:
2766:
2699:
2632:
2545:
2541:
2487:
2025:
1969:
1961:
1953:
1920:
1682:
1619:
1564:
1560:
1072:
898:
652:
418:
413:
288:
153:
79:
3536:. Berlin, Heidelberg: Springer-Verlag Berlin Heidelberg. p. 321.
3481:
3466:"Surface Protection and Selective Masking during Diffusion in Silicon"
2627:
in the early 1980s. Masuoka and colleagues presented the invention of
2942:
2628:
2580:
2331:
2315:
2198:
1937:
1891:
1803:
1756:
1459:
1424:
1261:
1190:
1088:
959:
950:
647:
590:
358:
278:
1712:
bit word. Consequently, the amount of data stored in each chip is
3565:"1970: MOS Dynamic RAM Competes with Magnetic Core Memory on Price"
2938:
2464:
2274:, the low level microcode which runs hardware devices, such as the
2271:
2212:
2017:(video cards). It can perform graphics-related operations such as
1991:
1929:, to increase the speed. The data on the chip is also divided into
1867:
1708:
bits, the number of addresses on the chip is 2, each containing an
1388:
1331:
1266:
1221:
1206:
976:
945:
918:
893:
751:
637:
363:
273:
168:
163:
4436:
Computer
Architecture For Interactive Display Of Segmented Imagery
2193:
which must be immediately accessible to the computer, such as the
4470:
4164:
4159:
4007:
3928:
3024:
2682:
2624:
2520:
2318:, to store files. It is used in portable devices such as PDAs,
1737:
1733:
1729:
1725:
1546:
1286:
1276:
1271:
1231:
1133:
1128:
1108:
913:
888:
878:
669:
1537:. It typically refers to devices in which data is stored within
2970:
2916:
2757:
2608:
2430:
1844:
1759:
multiple words are accessed with each read or write operation.
1584:
1281:
1241:
1123:
1012:
810:
353:
2417:
memory failed to replace magnetic-core memory because bipolar
4222:
2774:
2695:
2604:
2600:
2376:(BJT), were impractical for use as digital storage elements (
2037:
1580:
1216:
1153:
1148:
1143:
805:
762:
756:
642:
622:
607:
4195:
4185:
3397:
3395:
2909:
2635:
in 1987. Toshiba commercialized NAND flash memory in 1987.
2452:
2275:
2256:
4M EPROM, showing transparent window used to erase the chip
2194:
2021:
and block write, and can open two pages of memory at once.
1615:
1211:
498:
148:
1973:– Transfers 16 consecutive words per internal clock cycle.
4439:. Computer Architectures for Spatially Distributed Data.
3799:"1966: Semiconductor RAMs Serve High-speed Storage Needs"
3728:
3373:"1966: Semiconductor RAMs Serve High-speed Storage Needs"
2731:
2510:
2491:
2125:
2107:
1965:– Transfers 8 consecutive words per internal clock cycle.
1747:
The two basic operations performed by a memory chip are "
1251:
1138:
908:
3392:
2455:(complementary MOS) memory cells, in addition to MOSFET
1957:– Transfers 4 consecutive words per internal clock cycle
1783:
1602:
Most types of semiconductor memory have the property of
4008:
Marie-Aude
Aufaure; Esteban Zimányi (17 January 2013).
3559:
3557:
3555:
3553:
2201:) for portable devices and embedded computers such as
1700:
Data is accessed by means of a binary number called a
3367:
3365:
3363:
3361:
3359:
3197:
CRC Handbook of
Digital System Design, Second Edition
2278:
program in most computers, so that it can be updated.
2197:
program which starts the computer, and the software (
1675:
of binary data is stored in a tiny circuit called a
1629:
As of 2017, sales of semiconductor memory chips are
4406:"SuperPaint: An Early Frame Buffer Graphics System"
4032:
3550:
2924:
Electrically erasable programmable read-only memory
2482:at Fairchild in 1968 enabled the production of MOS
2267:
Electrically erasable programmable read-only memory
4001:
3356:
4065:
3943:
3658:"1968: Silicon Gate Technology Developed for ICs"
2559:The term "memory" is also often used to refer to
4490:
4397:
3003:applications, telecommunications, code storage,
2098:) – This is DRAM which has circuitry to perform
4345:
4343:
4341:
4339:
4337:
4335:
4333:
4331:
4282:
4280:
4278:
4276:
4274:
4272:
4270:
4268:
3304:. India: Technical Publications. p. 1.35.
3237:
2591:could be used for the cell of a reprogrammable
1649:and other small digital registers that have no
3297:
3241:Digital System Design - Use of Microcontroller
2501:(RAM). The two main types of volatile RAM are
1790:chips for computers usually come on removable
4403:
4290:Deep-Submicron CMOS ICs: From Basics to ASICs
4246:"1971: Reusable semiconductor ROM introduced"
4040:"1971: Reusable semiconductor ROM introduced"
3976:
3600:
1806:while the computer is off. Major types are:
1500:
4370:
4328:
4265:
4188:Electron Devices Meeting, 1987 International
3690:IEEE Solid-State Circuits Society Newsletter
3463:
2613:Ministry of International Trade and Industry
2439:MOS memory was developed by John Schmidt at
3844:"Intel: 35 Years of Innovation (1968–2003)"
3780:Toshiba "Toscal" BC-1411 Desktop Calculator
3238:Dawoud, Dawoud Shenouda; R. Peplow (2010).
4463:
4432:
3963:(15–21). Hayden Publishing Company. 1993.
3882:
3142:Integrated Circuit Engineering Corporation
3109:Integrated Circuit Engineering Corporation
2451:proposed digital storage systems that use
1770:to store instructions awaiting execution.
1693:that is usually a power of two, typically
1507:
1493:
4376:
4349:
4286:
3970:
3836:
3751:"Spec Sheet for Toshiba "TOSCAL" BC-1411"
3715:
3713:
3701:
3683:
3501:Technical Memorandum of Bell Laboratories
3166:
2013:) – A specialized type of SDRAM made for
1716:2 bits. The memory storage capacity for
4380:Nanometer CMOS ICs: From Basics to ASICs
4353:Nanometer CMOS ICs: From Basics to ASICs
3633:
3497:"Silicon-Silicon Dioxide Surface Device"
3301:Fundamentals of Computing and Programing
3233:
3231:
3229:
3170:Nanometer CMOS ICs: From Basics to ASICs
2550:Synchronous dynamic random-access memory
2251:
1916:Synchronous dynamic random-access memory
1782:
1595:memory cells, which consist of a single
4383:(2nd ed.). Springer. p. 264.
4356:(2nd ed.). Springer. p. 315.
4108:
3743:
3327:
3325:
3293:
3291:
2421:circuits were too large and expensive.
2396:in 1961. The same year, the concept of
1657:although they also store digital data.
14:
4491:
3710:
3470:Journal of the Electrochemical Society
3338:. Laxmi Publications. pp. 39–41.
3244:. River Publishers. pp. 255–258.
2889:Erasable programmable read-only memory
2619:in 1972. Flash memory was invented by
2242:Erasable programmable read-only memory
2164:
1847:(MOS field-effect transistor) and one
1571:(DRAM), which uses a transistor and a
4441:Springer Science & Business Media
3897:Springer Science & Business Media
3888:
3531:
3494:
3432:
3403:"Semiconductor Memory Timeline Notes"
3331:
3226:
2785:(HDD), networks, personal computers,
1671:In a semiconductor memory chip, each
1048:Vision Electronic Recording Apparatus
4068:IEEE Journal of Solid-State Circuits
3892:History of Semiconductor Engineering
3634:Wood, J.; Ball, R. (February 1965).
3534:History of Semiconductor Engineering
3322:
3288:
3214:from the original on 27 October 2016
2658:
2538:IBM Thomas J. Watson Research Center
2447:In 1965, J. Wood and R. Ball of the
2176:among other uses. Major types are:
1633:annually, accounting for 30% of the
1614:than other types of data storage; a
4218:"1987: Toshiba Launches NAND Flash"
4160:"Toshiba: Inventor of Flash Memory"
4028:from the original on 27 April 2018.
3997:from the original on 27 April 2018.
3193:
3187:
24:
4413:Annals of the History of Computing
4210:
4109:Fulford, Benjamin (24 June 2002).
3868:
3773:
3274:Semiconductor Industry Association
2819:Ferroelectric random-access memory
1778:
209:Data validation and reconciliation
25:
4525:
4121:from the original on 3 March 2008
3977:Han-Way Huang (5 December 2008).
3876:The DRAM memory of Robert Dennard
3686:"Recollections on MOSFET Scaling"
3464:Frosch, C. J.; Derick, L (1957).
3048:Non-volatile random-access memory
2289:Non-volatile random-access memory
1766:chips that run computers contain
1653:are typically not referred to as
1651:memory address decoding mechanism
259:Distributed file system for cloud
4464:Windbacher, Thomas (June 2010).
3983:. Cengage Learning. p. 22.
3980:Embedded System Design with C805
3761:from the original on 3 July 2017
3352:from the original on 2014-07-06.
3318:from the original on 2014-07-06.
3258:from the original on 2014-07-06.
2826:MOSFET, Ferroelectric capacitor
2304:) – One type of nonvolatile RAM.
107:Areal density (computer storage)
4457:
4426:
4377:Veendrick, Harry J. M. (2017).
4350:Veendrick, Harry J. M. (2017).
4238:
4179:
4152:
4133:
4102:
4059:
3917:
3809:
3791:
3677:
3650:
3627:
3584:
3525:
3488:
3457:
3426:
3335:Foundations of Computer Science
3298:Godse, A.P.; D.A.Godse (2008).
3167:Veendrick, Harry J. M. (2017).
2638:
2583:of Bell Labs proposed that the
2552:(SDRAM) later debuted with the
926:Programmable metallization cell
4433:Goldwasser, S.M. (June 1983).
3262:
3160:
3127:
3094:
2860:electronic musical instruments
2834:radio-frequency identification
2128:of data in a circuit called a
1660:
489:Persistence (computer science)
13:
1:
3849:. Intel. 2003. Archived from
3087:
2573:Programmable read-only memory
2490:memory was commercialized by
2424:
2382:Bipolar semiconductor memory
2230:Programmable read-only memory
1681:consisting of one to several
1357:Electronic quantum holography
3173:. Springer. pp. 314–5.
2750:Dynamic random-access memory
2507:dynamic random-access memory
1836:Dynamic random-access memory
708:Video RAM (dual-ported DRAM)
504:Non-RAID drive architectures
7:
3608:"Transistors – an overview"
3070:
2787:personal digital assistants
2675:Static random-access memory
2645:List of MOSFET applications
2617:Electrotechnical Laboratory
2503:static random-access memory
2463:, switched cross-coupling,
2374:bipolar junction transistor
2121:Static random-access memory
1563:(SRAM), which uses several
10:
4530:
4298:Kluwer Academic Publishers
3703:10.1109/N-SSC.2007.4785536
3644:10.1109/ISSCC.1965.1157606
3593:Solid State Design. Vol. 6
3509:10.1142/9789814503464_0076
3200:. CRC Press. p. 225.
3135:"MOS Memory Market Trends"
2642:
2428:
2404:(IC) chip was proposed by
2342:
2338:
2149:Content-addressable memory
2136:. It is used for smaller
1892:Video random access memory
1664:
1297:Holographic Versatile Disc
1196:Compact Disc Digital Audio
1068:Magnetic-tape data storage
687:Content-addressable memory
4287:Veendrick, Harry (2000).
4088:10.1109/JSSC.1972.1052895
4014:. Springer. p. 136.
3755:Old Calculator Web Museum
3684:Critchlow, D. L. (2007).
2935:Anti-lock braking systems
2607:(erasable PROM) in 1971.
2556:KM48SL2000 chip in 1992.
2449:Royal Radar Establishment
1899:memory once used for the
1539:metal–oxide–semiconductor
494:Persistent data structure
389:Digital rights management
4204:10.1109/IEDM.1987.191485
3925:"KM48SL2000-7 Datasheet"
2650:MOS memory applications
2523:introduced bipolar DRAM
2010:Synchronous graphics RAM
1773:
1597:floating-gate transistor
1369:DNA digital data storage
1352:Holographic data storage
841:Solid-state hybrid drive
127:Network-attached storage
4443:. pp. 75–94 (81).
4251:Computer History Museum
4045:Computer History Museum
3879:. history-computer.com.
3822:Encyclopedia Britannica
3803:Computer History Museum
3663:Computer History Museum
3570:Computer History Museum
3433:Orton, John W. (2009).
3411:Computer History Museum
3378:Computer History Museum
3146:Smithsonian Institution
3113:Smithsonian Institution
3102:"The MOS Memory Market"
2743:nonvolatile BIOS memory
2575:(PROM) was invented by
2527:for its Toscal BC-1411
2478:(MOS IC) technology by
2441:Fairchild Semiconductor
2410:Fairchild Semiconductor
2394:United States Air Force
2349:Memory cell (computing)
1364:5D optical data storage
1181:3D optical data storage
904:Universal Flash Storage
309:Replication (computing)
254:Distributed file system
144:Single-instance storage
122:Direct-attached storage
102:Continuous availability
4415:. IEEE. Archived from
4404:Richard Shoup (2001).
3596:. Horizon House. 1965.
3082:Semiconductor industry
3055:Floating-gate MOSFETs
3039:, solid-state drives,
3013:portable media players
2476:MOS integrated circuit
2363:solid-state electronic
2257:
1997:Extreme data rate DRAM
1943:Double data rate SDRAM
1880:Extended data out DRAM
1795:
1635:semiconductor industry
1237:Nintendo optical discs
454:Storage virtualization
324:Information repository
264:Distributed data store
3332:Arora, Ashok (2006).
2990:Floating-gate MOSFET
2931:Floating-gate MOSFET
2836:(RF identification),
2529:electronic calculator
2471:. The development of
2406:applications engineer
2388:was first shipped by
2255:
2156:where it is used for
2124:) – This stores each
2081:High Bandwidth Memory
1895:) – An older type of
1786:
1567:per memory cell, and
740:Mellon optical memory
728:Williams–Kilburn tube
444:Locality of reference
249:Clustered file system
75:Memory access pattern
3899:. pp. 362–363.
3194:Lin, Wen C. (1990).
3077:Electronics industry
2951:consumer electronics
2897:Floating-gate MOSFET
2856:Character generators
2795:main computer memory
2704:multimedia computers
2595:(ROM), which led to
2589:semiconductor device
2567:. It has origins in
2499:random-access memory
2359:magnetic-core memory
1815:Random-access memory
1697:=1, 2, 4 or 8 bits.
1557:random-access memory
1531:digital data storage
1527:semiconductor device
1520:Semiconductor memory
1436:Magnetic-core memory
1083:Digital Data Storage
1043:Quadruplex videotape
484:In-memory processing
374:Information transfer
269:Distributed database
132:Storage area network
112:Block (data storage)
4509:Integrated circuits
4499:Digital electronics
4149: Fujio Masuoka.
4080:1972IJSSC...7..369T
3951:"Electronic Design"
2967:military technology
2961:, embedded memory,
2955:cordless telephones
2830:Non-volatile memory
2651:
2561:non-volatile memory
2548:, in October 1970.
2515:System/360 Model 95
2214:Mask programmed ROM
2170:Non-volatile memory
2165:Non-volatile memory
1868:Fast page mode DRAM
1643:processor registers
1577:Non-volatile memory
1033:Phonograph cylinder
971:Electrochemical RAM
823:Solid-state storage
439:Memory segmentation
137:Block-level storage
29:Data storage device
4300:. pp. 267–8.
3889:Lojek, Bo (2007).
3856:on 4 November 2021
3785:2007-05-20 at the
3532:Lojek, Bo (2007).
3495:KAHNG, D. (1961).
3414:. November 8, 2006
2963:flight controllers
2803:solid-state drives
2724:telecommunications
2712:personal computers
2649:
2631:in 1984, and then
2469:delay-line storage
2402:integrated circuit
2258:
2031:Graphics DDR SDRAM
1843:consisting of one
1796:
1550:integrated circuit
1524:digital electronic
1442:Plated-wire memory
1407:Paper data storage
1053:Magnetic recording
479:In-memory database
464:Memory-mapped file
409:Volume boot record
404:Master boot record
394:Volume (computing)
369:Data communication
294:Data deduplication
4021:978-3-642-36318-4
3990:978-1-111-81079-5
3956:Electronic Design
3543:978-3-540-34258-8
3518:978-981-02-0209-5
3482:10.1149/1.2428650
3450:978-0-08-096390-7
3276:. 5 February 2018
3068:
3067:
3059:Medical equipment
2799:desktop computers
2534:Robert H. Dennard
2414:first single-chip
2390:Texas Instruments
2301:Ferroelectric RAM
2247:ultraviolet light
2015:graphics adaptors
1517:
1516:
1114:8 mm video format
1038:Phonograph record
857:Flash Core Module
835:Solid-state drive
734:Delay-line memory
693:Computational RAM
596:Scratchpad memory
434:Disk partitioning
159:Unstructured data
85:Secondary storage
18:Electronic memory
16:(Redirected from
4521:
4483:
4482:
4480:
4478:
4461:
4455:
4454:
4430:
4424:
4423:
4421:
4410:
4401:
4395:
4394:
4374:
4368:
4367:
4347:
4326:
4325:
4323:
4322:
4316:
4310:. Archived from
4296:(2nd ed.).
4295:
4284:
4263:
4262:
4260:
4258:
4242:
4236:
4235:
4233:
4231:
4226:. April 11, 2012
4214:
4208:
4207:
4183:
4177:
4176:
4174:
4172:
4156:
4150:
4148:
4147:
4143:
4137:
4131:
4130:
4128:
4126:
4106:
4100:
4099:
4063:
4057:
4056:
4054:
4052:
4036:
4030:
4029:
4005:
3999:
3998:
3974:
3968:
3967:
3947:
3941:
3940:
3938:
3936:
3921:
3915:
3914:
3886:
3880:
3872:
3866:
3865:
3863:
3861:
3855:
3848:
3840:
3834:
3833:
3831:
3829:
3817:"Robert Dennard"
3813:
3807:
3806:
3795:
3789:
3777:
3771:
3770:
3768:
3766:
3747:
3741:
3740:
3738:
3736:
3717:
3708:
3707:
3705:
3681:
3675:
3674:
3672:
3670:
3654:
3648:
3647:
3631:
3625:
3624:
3622:
3620:
3604:
3598:
3597:
3588:
3582:
3581:
3579:
3577:
3561:
3548:
3547:
3529:
3523:
3522:
3492:
3486:
3485:
3461:
3455:
3454:
3430:
3424:
3423:
3421:
3419:
3407:
3399:
3390:
3389:
3387:
3385:
3369:
3354:
3353:
3329:
3320:
3319:
3295:
3286:
3285:
3283:
3281:
3266:
3260:
3259:
3235:
3224:
3223:
3221:
3219:
3191:
3185:
3184:
3164:
3158:
3157:
3155:
3153:
3139:
3131:
3125:
3124:
3122:
3120:
3106:
3098:
3041:tablet computers
2845:Read-only memory
2660:
2655:MOS memory type
2652:
2648:
2593:read-only memory
2569:read-only memory
2386:discrete devices
2322:, and removable
2320:USB flash drives
2203:microcontrollers
2186:Read-only memory
2095:Pseudostatic RAM
1632:
1509:
1502:
1495:
1454:Thin-film memory
1448:Core rope memory
1374:Universal memory
1337:Millipede memory
1327:Racetrack memory
1292:Ultra HD Blu-ray
1104:Linear Tape-Open
1058:Magnetic storage
1026:Analog recording
469:Software entropy
429:Disk aggregation
189:Data degradation
174:Data compression
70:Memory hierarchy
60:Memory coherence
32:
31:
21:
4529:
4528:
4524:
4523:
4522:
4520:
4519:
4518:
4504:Computer memory
4489:
4488:
4487:
4486:
4476:
4474:
4462:
4458:
4451:
4431:
4427:
4419:
4408:
4402:
4398:
4391:
4375:
4371:
4364:
4348:
4329:
4320:
4318:
4314:
4308:
4293:
4285:
4266:
4256:
4254:
4244:
4243:
4239:
4229:
4227:
4216:
4215:
4211:
4184:
4180:
4170:
4168:
4158:
4157:
4153:
4145:
4139:
4138:
4134:
4124:
4122:
4107:
4103:
4064:
4060:
4050:
4048:
4038:
4037:
4033:
4022:
4006:
4002:
3991:
3975:
3971:
3949:
3948:
3944:
3934:
3932:
3923:
3922:
3918:
3907:
3887:
3883:
3873:
3869:
3859:
3857:
3853:
3846:
3842:
3841:
3837:
3827:
3825:
3815:
3814:
3810:
3797:
3796:
3792:
3787:Wayback Machine
3778:
3774:
3764:
3762:
3749:
3748:
3744:
3734:
3732:
3731:. 9 August 2017
3719:
3718:
3711:
3682:
3678:
3668:
3666:
3656:
3655:
3651:
3632:
3628:
3618:
3616:
3606:
3605:
3601:
3590:
3589:
3585:
3575:
3573:
3563:
3562:
3551:
3544:
3530:
3526:
3519:
3493:
3489:
3462:
3458:
3451:
3443:. p. 104.
3431:
3427:
3417:
3415:
3405:
3401:
3400:
3393:
3383:
3381:
3371:
3370:
3357:
3346:
3330:
3323:
3312:
3296:
3289:
3279:
3277:
3268:
3267:
3263:
3252:
3236:
3227:
3217:
3215:
3208:
3192:
3188:
3181:
3165:
3161:
3151:
3149:
3137:
3133:
3132:
3128:
3118:
3116:
3104:
3100:
3099:
3095:
3090:
3073:
3035:, set-top box,
3017:USB flash drive
3015:, BIOS memory,
3005:digital cameras
3001:battery-powered
2783:hard disk drive
2647:
2641:
2563:, specifically
2480:Federico Faggin
2433:
2427:
2355:computer memory
2351:
2345:Computer memory
2341:
2328:digital cameras
2191:system software
2167:
2154:microprocessors
1853:electric charge
1799:Volatile memory
1781:
1779:Volatile memory
1776:
1669:
1667:Computer memory
1663:
1639:Shift registers
1630:
1624:primary storage
1535:computer memory
1513:
1484:
1483:
1402:
1394:
1393:
1347:Patterned media
1317:
1309:
1308:
1176:
1166:
1165:
1161:Hard disk drive
1028:
1018:
1017:
998:
987:
986:
941:
931:
930:
852:IBM FlashSystem
847:USB flash drive
786:
769:
768:
723:
715:
714:
703:Dual-ported RAM
581:
564:
563:
524:Cloud computing
384:Copy protection
304:Data redundancy
234:Shared resource
204:Data validation
179:Data corruption
154:Structured data
65:Cache coherence
50:
36:Computer memory
30:
23:
22:
15:
12:
11:
5:
4527:
4517:
4516:
4511:
4506:
4501:
4485:
4484:
4466:"Flash Memory"
4456:
4449:
4425:
4422:on 2004-06-12.
4396:
4389:
4369:
4362:
4327:
4306:
4264:
4237:
4209:
4178:
4151:
4132:
4101:
4074:(5): 369–375.
4058:
4031:
4020:
4000:
3989:
3969:
3942:
3916:
3905:
3881:
3867:
3835:
3808:
3790:
3772:
3742:
3709:
3676:
3649:
3626:
3599:
3583:
3549:
3542:
3524:
3517:
3487:
3456:
3449:
3441:Academic Press
3425:
3391:
3355:
3344:
3321:
3311:978-8184315097
3310:
3287:
3261:
3251:978-8792329400
3250:
3225:
3206:
3186:
3179:
3159:
3126:
3092:
3091:
3089:
3086:
3085:
3084:
3079:
3072:
3069:
3066:
3065:
3056:
3053:
3050:
3044:
3043:
3033:mobile devices
2991:
2988:
2985:
2979:
2978:
2977:, smart cards
2932:
2929:
2926:
2920:
2919:
2899:
2894:
2891:
2885:
2884:
2878:word processor
2874:ROM cartridges
2853:
2850:
2847:
2841:
2840:
2827:
2824:
2821:
2815:
2814:
2771:embedded logic
2764:
2755:
2752:
2746:
2745:
2720:supercomputers
2685:
2680:
2677:
2671:
2670:
2667:
2661:
2656:
2640:
2637:
2577:Wen Tsing Chow
2426:
2423:
2408:Bob Norman at
2366:semiconductors
2340:
2337:
2336:
2335:
2307:
2306:
2305:
2281:
2280:
2279:
2259:
2234:
2222:
2166:
2163:
2162:
2161:
2141:
2138:cache memories
2134:memory refresh
2113:
2112:
2111:
2100:memory refresh
2087:
2086:
2085:
2073:
2072:
2071:
2070:
2069:
2062:
2055:
2048:
2041:
2002:
2001:
2000:
1976:
1975:
1974:
1966:
1958:
1947:double pumping
1908:
1907:(video cards).
1905:video adapters
1884:
1872:
1839:) – This uses
1792:memory modules
1780:
1777:
1775:
1772:
1764:microprocessor
1702:memory address
1662:
1659:
1515:
1514:
1512:
1511:
1504:
1497:
1489:
1486:
1485:
1482:
1481:
1475:
1469:
1466:Twistor memory
1463:
1457:
1451:
1445:
1439:
1433:
1427:
1422:
1416:
1410:
1403:
1400:
1399:
1396:
1395:
1392:
1391:
1386:
1384:Quantum memory
1381:
1376:
1371:
1366:
1361:
1360:
1359:
1349:
1344:
1339:
1334:
1329:
1324:
1318:
1316:In development
1315:
1314:
1311:
1310:
1307:
1306:
1301:
1300:
1299:
1294:
1289:
1284:
1279:
1274:
1269:
1264:
1259:
1254:
1249:
1244:
1239:
1234:
1229:
1227:Super Video CD
1224:
1219:
1214:
1209:
1204:
1199:
1193:
1188:
1177:
1172:
1171:
1168:
1167:
1164:
1163:
1158:
1157:
1156:
1151:
1146:
1141:
1136:
1131:
1126:
1121:
1116:
1111:
1106:
1101:
1096:
1091:
1086:
1080:
1075:
1070:
1065:
1060:
1050:
1045:
1040:
1035:
1029:
1024:
1023:
1020:
1019:
1016:
1015:
1010:
1005:
999:
993:
992:
989:
988:
985:
984:
979:
974:
968:
963:
953:
948:
942:
937:
936:
933:
932:
929:
928:
923:
922:
921:
916:
911:
906:
901:
896:
891:
886:
884:MultiMediaCard
881:
876:
871:
861:
860:
859:
854:
849:
844:
838:
832:
820:
815:
814:
813:
808:
798:
793:
787:
782:
781:
778:
777:
771:
770:
767:
766:
760:
754:
749:
746:Selectron tube
743:
737:
731:
724:
721:
720:
717:
716:
713:
712:
711:
710:
700:
695:
690:
684:
679:
674:
673:
672:
662:
661:
660:
655:
650:
645:
640:
635:
630:
625:
620:
615:
610:
600:
599:
598:
593:
586:Hardware cache
582:
577:
576:
573:
572:
566:
565:
562:
561:
556:
551:
546:
541:
539:Edge computing
536:
531:
526:
521:
519:Grid computing
516:
514:Bank switching
511:
506:
501:
496:
491:
486:
481:
476:
471:
466:
461:
459:Virtual memory
456:
451:
446:
441:
436:
431:
426:
424:Disk mirroring
421:
416:
411:
406:
401:
396:
391:
386:
381:
379:Temporary file
376:
371:
366:
361:
356:
351:
346:
341:
336:
331:
329:Knowledge base
326:
321:
319:Storage record
316:
314:Memory refresh
311:
306:
301:
299:Data structure
296:
291:
286:
281:
276:
271:
266:
261:
256:
251:
246:
241:
236:
231:
226:
221:
216:
211:
206:
201:
196:
194:Data integrity
191:
186:
184:Data cleansing
181:
176:
171:
166:
161:
156:
151:
146:
141:
140:
139:
134:
124:
119:
117:Object storage
114:
109:
104:
99:
98:
97:
87:
82:
77:
72:
67:
62:
57:
51:
48:
47:
44:
43:
28:
9:
6:
4:
3:
2:
4526:
4515:
4512:
4510:
4507:
4505:
4502:
4500:
4497:
4496:
4494:
4473:
4472:
4467:
4460:
4452:
4450:9783642821509
4446:
4442:
4438:
4437:
4429:
4418:
4414:
4407:
4400:
4392:
4390:9783319475974
4386:
4382:
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4365:
4363:9783319475974
4359:
4355:
4354:
4346:
4344:
4342:
4340:
4338:
4336:
4334:
4332:
4317:on 2020-12-06
4313:
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4189:
4182:
4167:
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4155:
4142:
4136:
4120:
4116:
4112:
4111:"Unsung hero"
4105:
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4017:
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3996:
3992:
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3966:
3962:
3958:
3957:
3952:
3946:
3931:. August 1992
3930:
3926:
3920:
3913:
3908:
3906:9783540342588
3902:
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3645:
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3630:
3615:
3614:
3613:ScienceDirect
3609:
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3328:
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3213:
3209:
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3182:
3180:9783319475974
3176:
3172:
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3110:
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3097:
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3022:
3018:
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3006:
3002:
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2933:
2930:
2927:
2925:
2922:
2921:
2918:
2914:
2911:
2907:
2903:
2902:CD-ROM drives
2900:
2898:
2895:
2892:
2890:
2887:
2886:
2882:
2879:
2875:
2872:
2868:
2865:
2864:laser printer
2861:
2857:
2854:
2851:
2848:
2846:
2843:
2842:
2839:
2835:
2831:
2828:
2825:
2822:
2820:
2817:
2816:
2812:
2808:
2804:
2800:
2796:
2792:
2788:
2784:
2780:
2779:graphics card
2776:
2772:
2768:
2765:
2763:
2762:MOS capacitor
2759:
2756:
2753:
2751:
2748:
2747:
2744:
2740:
2736:
2733:
2729:
2725:
2721:
2717:
2713:
2709:
2705:
2701:
2697:
2693:
2689:
2686:
2684:
2681:
2678:
2676:
2673:
2672:
2669:Applications
2668:
2666:
2662:
2657:
2654:
2653:
2646:
2636:
2634:
2630:
2626:
2622:
2621:Fujio Masuoka
2618:
2614:
2610:
2606:
2602:
2598:
2594:
2590:
2586:
2585:floating gate
2582:
2578:
2574:
2570:
2566:
2562:
2557:
2555:
2551:
2547:
2543:
2539:
2535:
2530:
2526:
2522:
2518:
2516:
2512:
2508:
2504:
2500:
2495:
2493:
2489:
2485:
2481:
2477:
2474:
2470:
2466:
2462:
2458:
2457:power devices
2454:
2450:
2445:
2442:
2437:
2432:
2422:
2420:
2415:
2411:
2407:
2403:
2400:memory on an
2399:
2395:
2391:
2387:
2383:
2379:
2375:
2371:
2367:
2364:
2360:
2357:consisted of
2356:
2350:
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2333:
2329:
2325:
2321:
2317:
2313:
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2308:
2303:
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2238:
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2215:
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2207:
2206:
2204:
2200:
2196:
2192:
2188:
2187:
2182:
2179:
2178:
2177:
2175:
2171:
2159:
2155:
2151:
2150:
2145:
2142:
2140:in computers.
2139:
2135:
2131:
2127:
2123:
2122:
2117:
2114:
2109:
2105:
2104:game consoles
2101:
2097:
2096:
2091:
2088:
2083:
2082:
2077:
2074:
2068:
2067:
2063:
2061:
2060:
2056:
2054:
2053:
2049:
2047:
2046:
2042:
2040:
2039:
2035:
2034:
2032:
2028:
2027:
2023:
2022:
2020:
2016:
2012:
2011:
2006:
2003:
1998:
1994:
1993:
1989:
1988:
1986:
1985:
1980:
1977:
1972:
1971:
1967:
1964:
1963:
1959:
1956:
1955:
1951:
1950:
1948:
1944:
1940:
1939:
1935:
1934:
1932:
1928:
1927:
1922:
1918:
1917:
1912:
1909:
1906:
1902:
1901:frame buffers
1898:
1894:
1893:
1888:
1885:
1882:
1881:
1876:
1873:
1870:
1869:
1864:
1861:
1860:
1858:
1854:
1850:
1849:MOS capacitor
1846:
1842:
1838:
1837:
1832:
1829:
1828:
1827:
1825:
1824:random access
1821:
1817:
1816:
1811:
1807:
1805:
1800:
1793:
1789:
1785:
1771:
1769:
1765:
1760:
1758:
1754:
1750:
1745:
1743:
1739:
1735:
1731:
1727:
1723:
1722:address lines
1719:
1715:
1711:
1707:
1703:
1698:
1696:
1692:
1688:
1684:
1680:
1679:
1674:
1668:
1658:
1656:
1652:
1648:
1644:
1640:
1636:
1631:$ 124 billion
1627:
1625:
1621:
1617:
1613:
1609:
1605:
1604:random access
1600:
1598:
1594:
1593:floating-gate
1590:
1586:
1582:
1578:
1574:
1573:MOS capacitor
1570:
1566:
1562:
1558:
1554:
1551:
1548:
1544:
1540:
1536:
1532:
1528:
1525:
1521:
1510:
1505:
1503:
1498:
1496:
1491:
1490:
1488:
1487:
1479:
1476:
1473:
1472:Bubble memory
1470:
1467:
1464:
1461:
1458:
1455:
1452:
1449:
1446:
1443:
1440:
1437:
1434:
1431:
1428:
1426:
1423:
1420:
1417:
1414:
1411:
1408:
1405:
1404:
1398:
1397:
1390:
1387:
1385:
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1367:
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1325:
1323:
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1319:
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1305:
1302:
1298:
1295:
1293:
1290:
1288:
1285:
1283:
1280:
1278:
1275:
1273:
1270:
1268:
1265:
1263:
1260:
1258:
1255:
1253:
1250:
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1223:
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1215:
1213:
1210:
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1205:
1203:
1200:
1197:
1194:
1192:
1189:
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1184:
1183:
1182:
1179:
1178:
1175:
1170:
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1162:
1159:
1155:
1152:
1150:
1147:
1145:
1142:
1140:
1137:
1135:
1132:
1130:
1127:
1125:
1122:
1120:
1117:
1115:
1112:
1110:
1107:
1105:
1102:
1100:
1099:Cassette tape
1097:
1095:
1094:Videocassette
1092:
1090:
1087:
1084:
1081:
1079:
1076:
1074:
1071:
1069:
1066:
1064:
1063:Magnetic tape
1061:
1059:
1056:
1055:
1054:
1051:
1049:
1046:
1044:
1041:
1039:
1036:
1034:
1031:
1030:
1027:
1022:
1021:
1014:
1011:
1009:
1006:
1004:
1001:
1000:
997:
991:
990:
983:
980:
978:
975:
972:
969:
967:
964:
961:
957:
954:
952:
949:
947:
944:
943:
940:
935:
934:
927:
924:
920:
917:
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912:
910:
907:
905:
902:
900:
897:
895:
892:
890:
887:
885:
882:
880:
877:
875:
872:
870:
867:
866:
865:
862:
858:
855:
853:
850:
848:
845:
842:
839:
836:
833:
830:
827:
826:
824:
821:
819:
818:ROM cartridge
816:
812:
809:
807:
804:
803:
802:
799:
797:
794:
792:
789:
788:
785:
780:
779:
776:
773:
772:
764:
761:
758:
755:
753:
750:
747:
744:
741:
738:
735:
732:
729:
726:
725:
719:
718:
709:
706:
705:
704:
701:
699:
696:
694:
691:
688:
685:
683:
680:
678:
675:
671:
668:
667:
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663:
659:
656:
654:
651:
649:
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641:
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634:
631:
629:
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621:
619:
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611:
609:
606:
605:
604:
601:
597:
594:
592:
589:
588:
587:
584:
583:
580:
575:
574:
571:
568:
567:
560:
557:
555:
552:
550:
547:
545:
544:Dew computing
542:
540:
537:
535:
534:Fog computing
532:
530:
529:Cloud storage
527:
525:
522:
520:
517:
515:
512:
510:
509:Memory paging
507:
505:
502:
500:
497:
495:
492:
490:
487:
485:
482:
480:
477:
475:
472:
470:
467:
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460:
457:
455:
452:
450:
447:
445:
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440:
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435:
432:
430:
427:
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422:
420:
417:
415:
412:
410:
407:
405:
402:
400:
397:
395:
392:
390:
387:
385:
382:
380:
377:
375:
372:
370:
367:
365:
362:
360:
357:
355:
352:
350:
347:
345:
344:File deletion
342:
340:
337:
335:
334:Computer file
332:
330:
327:
325:
322:
320:
317:
315:
312:
310:
307:
305:
302:
300:
297:
295:
292:
290:
287:
285:
282:
280:
277:
275:
272:
270:
267:
265:
262:
260:
257:
255:
252:
250:
247:
245:
242:
240:
237:
235:
232:
230:
227:
225:
222:
220:
217:
215:
214:Data recovery
212:
210:
207:
205:
202:
200:
199:Data security
197:
195:
192:
190:
187:
185:
182:
180:
177:
175:
172:
170:
167:
165:
162:
160:
157:
155:
152:
150:
147:
145:
142:
138:
135:
133:
130:
129:
128:
125:
123:
120:
118:
115:
113:
110:
108:
105:
103:
100:
96:
95:floating-gate
93:
92:
91:
88:
86:
83:
81:
78:
76:
73:
71:
68:
66:
63:
61:
58:
56:
53:
52:
46:
45:
41:
37:
34:
33:
27:
19:
4475:. Retrieved
4469:
4459:
4435:
4428:
4417:the original
4412:
4399:
4379:
4372:
4352:
4319:. Retrieved
4312:the original
4289:
4255:. Retrieved
4249:
4240:
4228:. Retrieved
4221:
4212:
4187:
4181:
4169:. Retrieved
4163:
4154:
4135:
4123:. Retrieved
4114:
4104:
4071:
4067:
4061:
4049:. Retrieved
4043:
4034:
4010:
4003:
3979:
3972:
3964:
3960:
3954:
3945:
3933:. Retrieved
3919:
3910:
3891:
3884:
3875:
3870:
3858:. Retrieved
3851:the original
3838:
3826:. Retrieved
3820:
3811:
3802:
3793:
3775:
3763:. Retrieved
3754:
3745:
3735:20 September
3733:. Retrieved
3724:
3696:(1): 19–22.
3693:
3689:
3679:
3667:. Retrieved
3661:
3652:
3635:
3629:
3617:. Retrieved
3611:
3602:
3592:
3586:
3574:. Retrieved
3568:
3533:
3527:
3500:
3490:
3473:
3469:
3459:
3435:
3428:
3416:. Retrieved
3409:
3382:. Retrieved
3376:
3334:
3300:
3278:. Retrieved
3264:
3240:
3216:. Retrieved
3196:
3189:
3169:
3162:
3150:. Retrieved
3141:
3129:
3117:. Retrieved
3108:
3096:
3029:memory cards
2983:Flash memory
2973:, printers,
2807:video memory
2728:workstations
2688:Cache memory
2639:Applications
2565:flash memory
2558:
2525:memory cells
2519:
2496:
2484:memory chips
2473:silicon-gate
2461:power supply
2446:
2438:
2434:
2413:
2381:
2378:memory cells
2372:such as the
2368:, including
2352:
2324:memory cards
2311:Flash memory
2309:
2299:
2295:
2287:
2283:
2265:
2261:
2240:
2236:
2228:
2224:
2217:
2213:
2208:
2184:
2180:
2174:memory cards
2168:
2158:cache memory
2147:
2143:
2119:
2115:
2106:such as the
2093:
2089:
2079:
2075:
2064:
2057:
2050:
2043:
2036:
2030:
2024:
2008:
2004:
1996:
1990:
1982:
1978:
1968:
1960:
1952:
1942:
1936:
1930:
1924:
1914:
1910:
1890:
1886:
1878:
1874:
1866:
1862:
1841:memory cells
1834:
1830:
1819:
1813:
1809:
1808:
1797:
1768:cache memory
1761:
1752:
1748:
1746:
1742:power of two
1717:
1713:
1709:
1705:
1699:
1694:
1686:
1676:
1670:
1654:
1647:data buffers
1628:
1612:access times
1601:
1589:flash memory
1552:
1543:memory cells
1519:
1518:
1419:Punched tape
1413:Punched card
1379:Time crystal
1247:Hyper CD-ROM
1186:Optical disc
1078:Tape library
1013:FeFET memory
994:Early-stage
874:CompactFlash
869:Memory Stick
829:Flash memory
791:Diode matrix
775:Non-volatile
559:Kryder's law
549:Amdahl's law
474:Software rot
449:Logical disk
349:File copying
284:Data storage
239:File sharing
224:Data cluster
89:
40:data storage
26:
4477:20 December
3503:: 583–596.
3037:smartphones
3009:MP3 players
2997:controllers
2975:set-top box
2959:disk drives
2947:cell phones
2838:smart cards
2811:framebuffer
2801:, servers,
2739:data buffer
2735:disk buffer
2692:cell phones
2665:memory cell
2597:Dov Frohman
2505:(SRAM) and
2398:solid-state
2370:transistors
2361:, as early
2066:GDDR6 SDRAM
2059:GDDR5 SDRAM
2052:GDDR4 SDRAM
2045:GDDR3 SDRAM
2019:bit masking
1984:Rambus DRAM
1897:dual-ported
1691:word length
1683:transistors
1678:memory cell
1661:Description
1620:nanoseconds
1569:dynamic RAM
1565:transistors
1553:memory chip
1478:Floppy disk
1430:Drum memory
864:Memory card
831:is used in:
765:(2002–2010)
730:(1946–1947)
554:Moore's law
399:Boot sector
339:Object file
244:File system
55:Memory cell
4493:Categories
4321:2019-11-14
4307:9044001116
4141:US 4531203
3476:(9): 547.
3345:8170089719
3207:0849342724
3152:16 October
3119:16 October
3088:References
3063:spacecraft
3021:digital TV
2969:, modems,
2943:car radios
2881:dictionary
2871:video game
2767:Camcorders
2708:networking
2700:mainframes
2643:See also:
2633:NAND flash
2603:inventing
2546:Intel 1103
2542:capacitors
2429:See also:
2425:MOS memory
2384:made from
2343:See also:
2332:cellphones
2026:GDDR SDRAM
1970:DDR4 SDRAM
1962:DDR3 SDRAM
1954:DDR2 SDRAM
1926:pipelining
1921:memory bus
1720:number of
1665:See also:
1599:per cell.
1575:per cell.
1561:static RAM
1559:(RAM) are
1533:, such as
1401:Historical
1073:Tape drive
899:SmartMedia
722:Historical
419:Disk image
414:Disk array
289:Data store
90:MOS memory
80:Memory map
4096:0018-9200
3669:10 August
3218:4 January
2629:NOR flash
2587:of a MOS
2581:Simon Sze
2419:flip-flop
2316:hard disk
2199:microcode
2130:flip-flop
1938:DDR SDRAM
1857:refreshed
1804:hard disk
1757:DDR SDRAM
1579:(such as
1529:used for
1460:Disk pack
1425:Plugboard
1262:DVD-Video
1191:LaserDisc
1089:Videotape
960:3D XPoint
951:Memristor
591:CPU cache
359:Core dump
279:Data bank
229:Directory
4125:18 March
4119:Archived
4026:Archived
3995:Archived
3783:Archived
3759:Archived
3619:8 August
3418:2 August
3350:Archived
3316:Archived
3256:Archived
3212:Archived
3071:See also
2939:air bags
2908:memory,
2906:embedded
2791:printers
2465:switches
2459:for the
2326:used in
2272:firmware
2218:Mask ROM
1992:XDR DRAM
1875:EDO DRAM
1863:FPM DRAM
1738:terabits
1734:gigabits
1730:megabits
1726:kilobits
1389:UltraRAM
1267:DVD card
1222:Video CD
1207:CD Video
977:Nano-RAM
946:Memistor
919:XQD card
894:SIM card
752:Dekatron
638:XDR DRAM
633:EDO DRAM
570:Volatile
364:Hex dump
274:Database
169:Metadata
164:Big data
4514:MOSFETs
4471:TU Wien
4257:19 June
4230:20 June
4171:20 June
4165:Toshiba
4076:Bibcode
4051:19 June
3935:19 June
3929:Samsung
3860:26 June
3576:29 July
3384:19 June
3280:29 July
3025:e-books
2928:EEPROM
2913:storage
2852:MOSFET
2813:memory
2716:servers
2683:MOSFETs
2625:Toshiba
2615:(MITI)
2571:(ROM).
2554:Samsung
2536:at the
2521:Toshiba
2392:to the
2339:History
1820:(below)
1591:) uses
1547:silicon
1474:(~1970)
1468:(~1968)
1450:(1960s)
1287:Blu-ray
1277:MiniDVD
1272:DVD-RAM
1232:Mini CD
1174:Optical
1134:U-matic
1129:MicroMV
1109:Betamax
973:(ECRAM)
914:MicroP2
889:SD card
879:PC Card
670:1T-SRAM
628:QDRSRAM
219:Storage
49:General
4447:
4387:
4360:
4304:
4194:1987.
4146:
4115:Forbes
4094:
4018:
3987:
3903:
3828:8 July
3725:IBM100
3721:"DRAM"
3540:
3515:
3447:
3342:
3308:
3248:
3204:
3177:
3148:. 1998
3115:. 1997
3052:NVRAM
2987:Flash
2971:pagers
2917:modems
2893:EPROM
2758:MOSFET
2609:EEPROM
2431:MOSFET
2412:. The
2353:Early
2262:EEPROM
1845:MOSFET
1655:memory
1585:EEPROM
1541:(MOS)
1480:(1971)
1462:(1962)
1456:(1962)
1444:(1957)
1438:(1949)
1432:(1932)
1421:(1725)
1415:(1725)
1409:(1725)
1282:HD DVD
1242:CD-ROM
1198:(CDDA)
1124:MiniDV
843:(SSHD)
825:(SSS)
811:EEPROM
759:(2009)
748:(1952)
742:(1951)
736:(1947)
354:Backup
4420:(PDF)
4409:(PDF)
4315:(PDF)
4294:(PDF)
4223:eWeek
3854:(PDF)
3847:(PDF)
3765:8 May
3406:(PDF)
3138:(PDF)
3105:(PDF)
2883:data
2867:fonts
2823:FRAM
2775:eDRAM
2754:DRAM
2696:eSRAM
2679:SRAM
2659:Abbr.
2605:EPROM
2601:Intel
2284:NVRAM
2237:EPROM
2090:PSRAM
2038:GDDR2
2005:SGRAM
1979:RDRAM
1931:banks
1911:SDRAM
1774:Types
1753:write
1687:words
1581:EPROM
1545:on a
1522:is a
1342:ECRAM
1322:CBRAM
1257:DVD+R
1217:CD-RW
1154:D-VHS
1149:VHS-C
1144:S-VHS
1085:(DDS)
1008:ReRAM
1003:FeRAM
996:NVRAM
982:CBRAM
939:NVRAM
837:(SSD)
806:EPROM
763:Z-RAM
757:T-RAM
689:(CAM)
677:ReRAM
643:RDRAM
623:LPDDR
618:SGRAM
613:SDRAM
608:eDRAM
42:types
4479:2019
4445:ISBN
4385:ISBN
4358:ISBN
4302:ISBN
4259:2019
4232:2019
4196:IEEE
4192:IEDM
4173:2019
4127:2008
4092:ISSN
4053:2019
4016:ISBN
3985:ISBN
3937:2019
3901:ISBN
3862:2019
3830:2019
3767:2018
3737:2019
3671:2019
3621:2019
3578:2019
3538:ISBN
3513:ISBN
3445:ISBN
3420:2019
3386:2019
3340:ISBN
3306:ISBN
3282:2019
3246:ISBN
3220:2016
3202:ISBN
3175:ISBN
3154:2019
3121:2019
2910:code
2849:ROM
2663:MOS
2488:NMOS
2467:and
2453:CMOS
2347:and
2330:and
2296:FRAM
2276:BIOS
2225:PROM
2209:MROM
2195:BIOS
2116:SRAM
1887:VRAM
1831:DRAM
1749:read
1616:byte
1587:and
1332:NRAM
1304:WORM
1212:CD-R
966:MRAM
801:PROM
796:MROM
698:VRAM
682:QRAM
665:SRAM
653:GDDR
603:DRAM
499:RAID
149:Data
38:and
4200:doi
4084:doi
3912:21.
3729:IBM
3698:doi
3640:doi
3505:doi
3478:doi
3474:104
2994:ATA
2737:,
2732:DVD
2623:at
2599:of
2511:bit
2492:IBM
2216:or
2181:ROM
2144:CAM
2126:bit
2108:Wii
2076:HBM
1903:of
1810:RAM
1788:RAM
1736:or
1673:bit
1608:CDs
1252:DVD
1139:VHS
956:PCM
909:SxS
784:ROM
658:HBM
648:DDR
579:RAM
4495::
4468:.
4411:.
4330:^
4267:^
4248:.
4220:.
4198:.
4190:.
4162:.
4117:.
4113:.
4090:.
4082:.
4070:.
4042:.
4024:.
3993:.
3961:41
3959:.
3953:.
3927:.
3909:.
3895:.
3819:.
3801:.
3757:.
3753:.
3727:.
3723:.
3712:^
3694:12
3692:.
3688:.
3660:.
3610:.
3567:.
3552:^
3511:.
3499:.
3472:.
3468:.
3439:.
3408:.
3394:^
3375:.
3358:^
3348:.
3324:^
3314:.
3290:^
3272:.
3254:.
3228:^
3210:.
3144:.
3140:.
3111:.
3107:.
3061:,
3031:,
3027:,
3023:,
3019:,
3011:,
3007:,
2999:,
2965:,
2957:,
2953:,
2949:,
2945:,
2941:,
2937:,
2915:,
2904:,
2876:,
2869:,
2862:,
2858:,
2832:,
2809:,
2805:,
2797:,
2793:,
2789:,
2781:,
2777:,
2773:,
2769:,
2760:,
2741:,
2730:,
2726:,
2722:,
2718:,
2714:,
2710:,
2706:,
2702:,
2698:,
2694:,
2690:,
2517:.
2486:.
2292:)
2205:.
2033:)
1826:.
1744:.
1732:,
1728:,
1645:,
1641:,
1637:.
1583:,
1202:CD
1119:DV
4481:.
4453:.
4393:.
4366:.
4324:.
4261:.
4234:.
4206:.
4202::
4175:.
4129:.
4098:.
4086::
4078::
4072:7
4055:.
3939:.
3864:.
3832:.
3805:.
3769:.
3739:.
3706:.
3700::
3673:.
3646:.
3642::
3623:.
3580:.
3546:.
3521:.
3507::
3484:.
3480::
3453:.
3422:.
3388:.
3284:.
3222:.
3183:.
3156:.
3123:.
2334:.
2298:(
2286:(
2264:(
2239:(
2227:(
2211:(
2183:(
2160:.
2146:(
2118:(
2110:.
2092:(
2078:(
2029:(
2007:(
1999:)
1995:(
1981:(
1941:(
1913:(
1889:(
1877:(
1865:(
1833:(
1812:(
1718:M
1714:N
1710:N
1706:M
1695:N
1508:e
1501:t
1494:v
962:)
958:(
20:)
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