291:. Bardeen then decided to make use of an inversion layer instead of the very thin layer of semiconductor which Shockley had envisioned in his FET designs. Based on his theory, in 1948 Bardeen patented the progenitor of MOSFET, an insulated-gate FET (IGFET) with an inversion layer. The inversion layer confines the flow of minority carriers, increasing modulation and conductivity, although its electron transport depends on the gate's insulator or quality of oxide if used as an insulator, deposited above the inversion layer. Bardeen's patent as well as the concept of an inversion layer forms the basis of CMOS technology today. In 1976 Shockley described Bardeen's surface state hypothesis "as one of the most significant research ideas in the semiconductor program".
419:
149:
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the source terminal towards the drain terminal is influenced by an applied voltage. The body simply refers to the bulk of the semiconductor in which the gate, source and drain lie. Usually the body terminal is connected to the highest or lowest voltage within the circuit, depending on the type of the FET. The body terminal and the source terminal are sometimes connected together since the source is often connected to the highest or lowest voltage within the circuit, although there are several uses of FETs which do not have such a configuration, such as
3778:
3814:
707:
826:. Any increase of the drain-to-source voltage will increase the distance from drain to the pinch-off point, increasing the resistance of the depletion region in proportion to the drain-to-source voltage applied. This proportional change causes the drain-to-source current to remain relatively fixed, independent of changes to the drain-to-source voltage, quite unlike its ohmic behavior in the linear mode of operation. Thus, in saturation mode, the FET behaves as a
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stray inductances and generate significant voltages that can couple to the gate and cause unintentional switching. FET circuits can therefore require very careful layout and can involve trades between switching speed and power dissipation. There is also a trade-off between voltage rating and "on" resistance, so high-voltage FETs have a relatively high "on" resistance and hence conduction losses.
741:) from the source to drain by affecting the size and shape of a "conductive channel" created and influenced by voltage (or lack of voltage) applied across the gate and source terminals. (For simplicity, this discussion assumes that the body and source are connected.) This conductive channel is the "stream" through which electrons flow from source to drain.
295:
poor. Bardeen went further and suggested to rather focus on the conductivity of the inversion layer. Further experiments led them to replace electrolyte with a solid oxide layer in the hope of getting better results. Their goal was to penetrate the oxide layer and get to the inversion layer. However, Bardeen suggested they switch from
810:, for a better analogy with bipolar transistor operating regions. The saturation mode, or the region between ohmic and saturation, is used when amplification is needed. The in-between region is sometimes considered to be part of the ohmic or linear region, even where drain current is not approximately linear with drain voltage.
758:
very small current). This is called "pinch-off", and the voltage at which it occurs is called the "pinch-off voltage". Conversely, a positive gate-to-source voltage increases the channel size and allows electrons to flow easily (see right figure, when there is a conduction channel and current is large).
677:
The names of the terminals refer to their functions. The gate terminal may be thought of as controlling the opening and closing of a physical gate. This gate permits electrons to flow through or blocks their passage by creating or eliminating a channel between the source and drain. Electron-flow from
1288:
FETs often have a very low "on" resistance and have a high "off" resistance. However, the intermediate resistances are significant, and so FETs can dissipate large amounts of power while switching. Thus, efficiency can put a premium on switching quickly, but this can cause transients that can excite
942:
or a p-type semiconductor. The drain and source may be doped of opposite type to the channel, in the case of enhancement mode FETs, or doped of similar type to the channel as in depletion mode FETs. Field-effect transistors are also distinguished by the method of insulation between channel and gate.
821:
exists in the p-type body, surrounding the conductive channel and drain and source regions. The electrons which comprise the channel are free to move out of the channel through the depletion region if attracted to the drain by drain-to-source voltage. The depletion region is free of carriers and has
551:
FETs can be majority-charge-carrier devices, in which the current is carried predominantly by majority carriers, or minority-charge-carrier devices, in which the current is mainly due to a flow of minority carriers. The device consists of an active channel through which charge carriers, electrons or
350:
on the semiconductor surface. Their further work demonstrated how to etch small openings in the oxide layer to diffuse dopants into selected areas of the silicon wafer. In 1957, they published a research paper and patented their technique summarizing their work. The technique they developed is known
1401:
In FETs, electrons can flow in either direction through the channel when operated in the linear mode. The naming convention of drain terminal and source terminal is somewhat arbitrary, as the devices are typically (but not always) built symmetrical from source to drain. This makes FETs suitable for
761:
In an n-channel "enhancement-mode" device, a conductive channel does not exist naturally within the transistor, and a positive gate-to-source voltage is necessary to create one. The positive voltage attracts free-floating electrons within the body towards the gate, forming a conductive channel. But
453:
proposed a silicon MOS transistor in 1959 and successfully demonstrated a working MOS device with their Bell Labs team in 1960. Their team included E. E. LaBate and E. I. Povilonis who fabricated the device; M. O. Thurston, L. A. D’Asaro, and J. R. Ligenza who developed the diffusion processes, and
757:
to expand in width and encroach on the channel from the sides, narrowing the channel. If the active region expands to completely close the channel, the resistance of the channel from source to drain becomes large, and the FET is effectively turned off like a switch (see right figure, when there is
689:
Unlike BJTs, the vast majority of FETs are electrically symmetrical. The source and drain terminals can thus be interchanged in practical circuits with no change in operating characteristics or function. This can be confusing when FET's appear to be connected "backwards" in schematic diagrams and
434:
effects. By 1957 Frosch and
Derrick, using masking and predeposition, were able to manufacture silicon dioxide transistors and showed that silicon dioxide insulated, protected silicon wafers and prevented dopants from diffusing into the wafer. J.R. Ligenza and W.G. Spitzer studied the mechanism of
801:
If drain-to-source voltage is increased, this creates a significant asymmetrical change in the shape of the channel due to a gradient of voltage potential from source to drain. The shape of the inversion region becomes "pinched-off" near the drain end of the channel. If drain-to-source voltage is
797:
For either enhancement- or depletion-mode devices, at drain-to-source voltages much less than gate-to-source voltages, changing the gate voltage will alter the channel resistance, and drain current will be proportional to drain voltage (referenced to source voltage). In this mode the FET operates
465:
integrated circuits. The MOSFET is also capable of handling higher power than the JFET. The MOSFET was the first truly compact transistor that could be miniaturised and mass-produced for a wide range of uses. The MOSFET thus became the most common type of transistor in computers, electronics, and
294:
After
Bardeen's surface state theory the trio tried to overcome the effect of surface states. In late 1947, Robert Gibney and Brattain suggested the use of electrolyte placed between metal and semiconductor to overcome the effects of surface states. Their FET device worked, but amplification was
673:
is the extension of the transistor, in the direction perpendicular to the cross section in the diagram (i.e., into/out of the screen). Typically the width is much larger than the length of the gate. A gate length of 1 μm limits the upper frequency to about 5 GHz, 0.2 μm to about
254:
basis, which limited them to a number of specialised applications. The insulated-gate field-effect transistor (IGFET) was theorized as a potential alternative to junction transistors, but researchers were unable to build working IGFETs, largely due to the troublesome surface state barrier that
314:
By the end of the first half of the 1950s, following theoretical and experimental work of
Bardeen, Brattain, Kingston, Morrison and others, it became more clear that there were two types of surface states. Fast surface states were found to be associated with the bulk and a semiconductor/oxide
1020:
technology which are utilized to detect charged molecules; when a charged molecule is present, changes in the electrostatic field at the BioFET surface result in a measurable change in current through the transistor. These include enzyme modified FETs (EnFETs), immunologically modified FETs
1244:
Field-effect transistors have high gate-to-drain current resistance, of the order of 100 MΩ or more, providing a high degree of isolation between control and flow. Because base current noise will increase with shaping time, a FET typically produces less noise than a
286:
in 1932) and realized that the external field was blocked at the surface because of extra electrons which are drawn to the semiconductor surface. Electrons become trapped in those localized states forming an inversion layer. Bardeen's hypothesis marked the birth of
2098:
1843:
876:; often, OFET gate insulators and electrodes are made of organic materials, as well. Such FETs are manufactured using a variety of materials such as silicon carbide (SiC), gallium arsenide (GaAs), gallium nitride (GaN), and indium gallium arsenide (InGaAs).
1280:
compared to a bipolar junction transistor. MOSFETs are very susceptible to overload voltages, thus requiring special handling during installation. The fragile insulating layer of the MOSFET between the gate and the channel makes it vulnerable to
1305:. If the characteristics of the body diode are not taken into consideration, the FET can experience slow body diode behavior, where a parasitic transistor will turn on and allow high current to be drawn from drain to source when the FET is off.
786:"depletion-mode" device, a positive voltage from gate to body widens the depletion layer by forcing electrons to the gate-insulator/semiconductor interface, leaving exposed a carrier-free region of immobile, positively charged acceptor ions.
1169:
The VeSFET (vertical-slit field-effect transistor) is a square-shaped junctionless FET with a narrow slit connecting the source and drain at opposite corners. Two gates occupy the other corners, and control the current through the
481:
In 1948, Bardeen and
Brattain patented the progenitor of MOSFET, an insulated-gate FET (IGFET) with an inversion layer. Their patent and the concept of an inversion layer, forms the basis of CMOS technology today.
375:
or MFSFET. Its structure was like that of a modern inversion channel MOSFET, but ferroelectric material was used as a dielectric/insulator instead of oxide. He envisioned it as a form of memory, years before the
976:) is a device for power control. It has a structure akin to a MOSFET coupled with a bipolar-like main conduction channel. These are commonly used for the 200–3000 V drain-to-source voltage range of operation.
355:
of MOSFET devices. At Bell Labs, the importance of Frosch's technique was immediately realized. Results of their work circulated around Bell Labs in the form of BTL memos before being published in 1957. At
1228:
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in some states. This allows extremely low-power switching, which in turn allows greater miniaturization of circuits because heat dissipation needs are reduced compared to other types of switches.
770:
of the FET. Further gate-to-source voltage increase will attract even more electrons towards the gate which are able to create an active channel from source to drain; this process is called
1070:
The FREDFET (fast-reverse or fast-recovery epitaxial diode FET) is a specialized FET designed to provide a very fast recovery (turn-off) of the body diode, making it convenient for driving
1209:. Due to the 2 dimensional structure of graphene, along with its physical properties, GFETs offer increased sensitivity, and reduced instances of 'false positives' in sensing applications
3053:
Lin, Y.-M.; Valdes-Garcia, A.; Han, S.-J.; Farmer, D. B.; Sun, Y.; Wu, Y.; Dimitrakopoulos, C.; Grill, A; Avouris, P; Jenkins, K. A. (2011). "Wafer-Scale
Graphene Integrated Circuit".
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rather than as a resistor, and can effectively be used as a voltage amplifier. In this case, the gate-to-source voltage determines the level of constant current through the channel.
211:
compound materials. In the course of trying to understand the mysterious reasons behind their failure to build a working FET, it led to
Bardeen and Brattain instead inventing the
1425:
Source-gated transistors are more robust to manufacturing and environmental issues in large-area electronics such as display screens, but are slower in operation than FETs.
1257:
and satellite receivers. It exhibits no offset voltage at zero drain current and makes an excellent signal chopper. It typically has better thermal stability than a BJT.
710:
Simulation result for right side: formation of inversion channel (electron density) and left side: current-gate voltage curve (transfer characteristics) in an n-channel
1067:
The DEPFET is a FET formed in a fully depleted substrate and acts as a sensor, amplifier and memory node at the same time. It can be used as an image (photon) sensor.
762:
first, enough electrons must be attracted near the gate to counter the dopant ions added to the body of the FET; this forms a region with no mobile carriers called a
1398:
uses an arrangement where the (usually "enhancement-mode") p-channel MOSFET and n-channel MOSFET are connected in series such that when one is on, the other is off.
1191:) takes advantage of quantum tunneling to greatly increase the speed of transistor operation by eliminating the traditional transistor's area of electron conduction.
991:
278:. Shockley independently envisioned the FET concept in 1945, but he was unable to build a working device. The next year Bardeen explained his failure in terms of
1297:
Field-effect transistors are relatively robust, especially when operated within the temperature and electrical limitations defined by the manufacturer (proper
1410:, for example. FET is commonly used as an amplifier. For example, due to its large input resistance and low output resistance, it is effective as a buffer in
2712:
Sekigawa, Toshihiro; Hayashi, Yutaka (1 August 1984). "Calculated threshold-voltage characteristics of an XMOS transistor having an additional bottom gate".
789:
Conversely, in a p-channel "enhancement-mode" device, a conductive region does not exist and negative voltage must be used to generate a conduction channel.
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the transistor into operation; it is rare to make non-trivial use of the body terminal in circuit designs, but its presence is important when setting up the
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argues that "had
Brattain and Bardeen been working with silicon instead of germanium they would have stumbled across a successful field effect transistor".
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or changes to threshold voltage during handling. This is not usually a problem after the device has been installed in a properly designed circuit.
1194:
The SB-FET (Schottky-barrier field-effect transistor) is a field-effect transistor with metallic source and drain contact electrodes, which create
191:
in 1947, shortly after the 17-year patent expired. Shockley initially attempted to build a working FET by trying to modulate the conductivity of a
3706:
3304:
Sarvari H.; Ghayour, R.; Dastjerdy, E. (2011). "Frequency analysis of graphene nanoribbon FET by Non-Equilibrium Green's
Function in mode space".
3905:
3755:
2096:, Lincoln, Derick & Frosch, Carl J., "Oxidation of semiconductive surfaces for controlled diffusion", issued 1957-08-13
1841:, Lincoln, Derick & Frosch, Carl J., "Oxidation of semiconductive surfaces for controlled diffusion", issued 1957-08-13
1417:
IGBTs are used in switching internal combustion engine ignition coils, where fast switching and voltage blocking capabilities are important.
1260:
Because the FETs are controlled by gate charge, once the gate is closed or open, there is no additional power draw, as there would be with a
1005:(ion-sensitive field-effect transistor) can be used to measure ion concentrations in a solution; when the ion concentration (such as H, see
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in their operation, but not both. Many different types of field effect transistors exist. Field effect transistors generally display very
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increased further, the pinch-off point of the channel begins to move away from the drain towards the source. The FET is said to be in
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3105:
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circuits because the physical orientation of the FET was decided for other reasons, such as printed circuit layout considerations.
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of atoms, molecules and ions by the oxide from the ambient. The latter were found to be much more numerous and to have much longer
282:. Bardeen applied the theory of surface states on semiconductors (previous work on surface states was done by Shockley in 1939 and
259:
from penetrating into the material. By the mid-1950s, researchers had largely given up on the FET concept, and instead focused on
4420:
1174:
342:. They showed that oxide layer prevented certain dopants into the silicon wafer, while allowing for others, thus discovering the
104:
17:
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Even though the conductive channel formed by gate-to-source voltage no longer connects source to drain during saturation mode,
238:
and Y. Watanabe in 1950. Following
Shockley's theoretical treatment on the JFET in 1952, a working practical JFET was built by
567:
source (S), through which the carriers enter the channel. Conventionally, current entering the channel at S is designated by I
461:, and much lower power consumption and higher density than bipolar junction transistors, the MOSFET made it possible to build
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between the gate, allowing the transistor to retain its state in the absence of bias - such devices may have application as
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drain (D), through which the carriers leave the channel. Conventionally, current leaving the channel at D is designated by I
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1487:
987:) is a type of Field-effect transistor (FET) which channel is one or multiple nanowires and does not present any junction.
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and in the process their oxide got inadvertently washed off. They stumbled upon a completely different transistor, the
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Depletion-type FETs under typical voltages: JFET, poly-silicon MOSFET, double-gate MOSFET, metal-gate MOSFET, MESFET.
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4101:
3997:
1366:
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556:, flow from the source to the drain. Source and drain terminal conductors are connected to the semiconductor through
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was used as a gate dielectric, but he didn't pursue the idea. In his other patent filed the same year he described a
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887:. These transistors are capable of about 2.23 GHz cutoff frequency, much higher than standard silicon FETs.
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and
Lincoln Derrick accidentally grew a layer of silicon dioxide over the silicon wafer, for which they observed
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560:. The conductivity of the channel is a function of the potential applied across the gate and source terminals.
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IBM Research Unveils 'VTFET': A Revolutionary New Chip Architecture Which is Two Times the Performance finFET
1025:, cell-based BioFETs (CPFETs), beetle/chip FETs (BeetleFETs), and FETs based on ion-channels/protein binding.
418:
400:, conceived of a device similar to the later proposed MOSFET, although Labate's device didn't explicitly use
88:
360:, Shockley had circulated the preprint of their article in December 1956 to all his senior staff, including
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Top: source, bottom: drain, left: gate, right: bulk. Voltages that lead to channel formation are not shown.
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gate (G), the terminal that modulates the channel conductivity. By applying voltage to G, one can control I
1055:(junction field-effect transistor) uses a reverse biased p–n junction to separate the gate from the body.
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The concept of a field-effect transistor (FET) was first patented by the Austro-Hungarian born physicist
103:. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the
3627:"Source-gated transistors for order-of-magnitude performance improvements in thin-film digital circuits"
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1611:
Nishizawa, Jun-Ichi (1982). "Junction Field-Effect Devices". In Sittig, Roland; Roggwiller, P. (eds.).
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in general. Junction transistors were relatively bulky devices that were difficult to manufacture on a
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The TQFET (topological quantum field-effect transistor) switches a 2D material from dissipationless
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4257:
4113:
2976:
1329:
1085:
The HIGFET (heterostructure insulated-gate field-effect transistor) is now used mainly in research.
304:
212:
1786:(1994). "Research on crystal rectifiers during World War II and the invention of the transistor".
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3276:
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Farrah, H. R.; Steinberg, R. F. (February 1967). "Analysis of double-gate thin-film transistor".
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486:(complementary MOS), a semiconductor device fabrication process for MOSFETs, was developed by
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and others came up with various methods of producing atomically clean semiconductor surfaces.
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like a variable resistor and the FET is said to be operating in a linear mode or ohmic mode.
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1016:(Biologically sensitive field-effect transistor) is a class of sensors/biosensors based on
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interface. Slow surface states were found to be associated with the oxide layer because of
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calls it a "groundbreaking invention that transformed life and culture around the world".
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are not blocked from flowing. Considering again an n-channel enhancement-mode device, a
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FET. In March 1957, in his laboratory notebook, Ernesto Labate, a research scientist at
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2544:"Remarks by Director Iancu at the 2019 International Intellectual Property Conference"
1555:
Puers, Robert; Baldi, Livio; Voorde, Marcel Van de; Nooten, Sebastiaan E. van (2017).
1129:. The fully depleted wide-band-gap material forms the isolation between gate and body.
148:
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To the Digital Age: Research Labs, Start-up Companies, and the Rise of MOS Technology
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To the Digital Age: Research Labs, Start-up Companies, and the Rise of MOS Technology
2004:
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1387:(complementary metal oxide semiconductor) process technology is the basis for modern
1110:('on' state) to conventional insulator ('off' state) using an applied electric field.
1036:, by using a gate made of single-strand DNA molecules to detect matching DNA strands.
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Prakash, Abhijith; Ilatikhameneh, Hesameddin; Wu, Peng; Appenzeller, Joerg (2017).
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3196:(2011). "Tunnel field-effect transistors as energy-efficient electronic switches".
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D. Kahng and S. M. Sze, "A floating gate and its application to memory devices",
1976:
Development of HfO2-Based Ferroelectric Memories for Future CMOS Technology Nodes
1757:
1620:
1494:
US Patent no. 1,745,175 (filed: 8 October 1926 ; issued: 28 January 1930).
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3431:"Understanding contact gating in Schottky barrier transistors from 2D channels"
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1838:
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234:(SIT), a type of JFET with a short channel, was invented by Japanese engineers
196:
127:
123:
72:
3722:
3480:
3277:"Organic transistor paves way for new generations of neuro-inspired computers"
3132:"Recent advances in biologically sensitive field-effect transistors (BioFETs)"
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1201:
The GFET is a highly sensitive graphene-based field effect transistor used as
422:
1957, Diagram of one of the SiO2 transistor devices made by Frosch and Derrick
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Advanced Materials Innovation: Managing Global Technology in the 21st century
1444:
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962:) between the gate and the body. This is by far the most common type of FET.
939:
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491:
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1683:"The Foundation of Today's Digital World: The Triumph of the MOS Transistor"
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3227:
3166:
3082:
1411:
1407:
1403:
1388:
1156:
1093:
1006:
977:
271:
176:
114:
since they involve single-carrier-type operation. That is, FETs use either
84:
980:
are still the device of choice for drain-to-source voltages of 1 to 200 V.
842:
is by far the most common. Most FETs are made by using conventional bulk
4843:
4585:
4534:
4440:
4425:
4208:
4170:
3841:
3803:
3613:
Slow Body Diode Failures of Field Effect Transistors (FETs): A Case Study
2275:
1894:
Makers of the Microchip: A Documentary History of Fairchild Semiconductor
518:
507:
471:
450:
427:
361:
331:
3883:
3733:
3219:
1921:
ULSI Process Integration III: Proceedings of the International Symposium
1890:
130:
at low frequencies. The most widely used field-effect transistor is the
4915:
4905:
4838:
4712:
4682:
4649:
4624:
4619:
4596:
4468:
4448:
4326:
4188:
4165:
4051:
3953:
3948:
3943:
3764:
3193:
2946:. Upper Saddle River NJ: Pearson Education/Prentice-Hall. p. 102.
2071:
1740:
1302:
316:
172:
164:
68:
3650:
3129:
2581:
2362:. Berlin, Heidelberg: Springer-Verlag Berlin Heidelberg. p. 321.
2129:
2114:"Surface Protection and Selective Masking during Diffusion in Silicon"
1877:
1862:"Surface Protection and Selective Masking during Diffusion in Silicon"
1721:
1249:(BJT), and is found in noise-sensitive electronics such as tuners and
1009:) changes, the current through the transistor will change accordingly.
533:
MOSFET, originated from the research of Digh Hisamoto and his team at
4878:
4722:
4717:
4707:
4634:
4514:
4348:
4343:
4268:
4193:
3767:
3158:
1202:
1033:
503:
397:
300:
283:
204:
188:
1318:
753:"depletion-mode" device, a negative gate-to-source voltage causes a
698:
39:
4900:
4848:
4828:
4806:
4692:
4687:
4575:
4564:
4493:
4263:
3590:"Origins of SiC FETs and Their Evolution Toward the Perfect Switch"
3447:
3031:
2489:
1298:
1071:
880:
734:
711:
266:
The foundations of MOSFET technology were laid down by the work of
115:
3303:
838:
FETs can be constructed from various semiconductors, out of which
702:
I–V characteristics and output plot of a JFET n-channel transistor
4760:
4697:
4519:
4504:
4358:
4315:
3963:
3867:
3726:
2431:
2278:(1960). "Silicon-silicon dioxide field induced surface devices".
1459:
895:
839:
823:
683:
598:
534:
296:
3625:
Sporea, R.A.; Trainor, M.J.; Young, N.D.; Silva, S.R.P. (2014).
2879:
2294:"1960 – Metal Oxide Semiconductor (MOS) Transistor Demonstrated"
1162:
The GNRFET (graphene nanoribbon field-effect transistor) uses a
951:(metal–oxide–semiconductor field-effect transistor) utilizes an
334:
and Lincoln Derrick accidentally covered the surface of silicon
155:, who proposed the concept of a field-effect transistor in 1925.
4833:
4524:
4488:
4453:
4013:
3985:
3958:
3933:
2999:
2792:"The Breakthrough Advantage for FPGAs with Tri-Gate Technology"
1812:
1454:
1380:
1232:
1213:
1152:
1133:
1126:
1121:), also called a HFET (heterostructure FET), can be made using
1043:
1039:
1022:
1013:
948:
792:
714:
526:
413:
208:
131:
3342:
Semiconductor Glossary: A Resource for Semiconductor Community
2571:
Howard R. Duff (2001). "John Bardeen and transistor physics".
1711:
Howard R. Duff (2001). "John Bardeen and transistor physics".
1136:(metal–semiconductor field-effect transistor) substitutes the
725:
669:
in the diagram, is the distance between source and drain. The
4910:
4821:
4580:
4353:
4146:
4008:
4003:
3251:"Topological off-on switch could make new type of transistor"
2975:(Fifth ed.). New York: Oxford University Press. p.
2798:
1265:
1017:
1002:
766:, and the voltage at which this occurs is referred to as the
372:
351:
as oxide diffusion masking, which would later be used in the
3717:
The Field Effect Transistor as a Voltage Controlled Resistor
1558:
Nanoelectronics: Materials, Devices, Applications, 2 Volumes
1046:
or gate-all-around FET, used on high density processor chips
4853:
4236:
4182:
4083:
4036:
3974:
3725:. rolinychupetin (L.R.Linares). March 30, 2013 – via
3004:(Fourth ed.). New York: Wiley. pp. §1.5.2 p. 45.
2597:"1963: Complementary MOS Circuit Configuration is Invented"
1439:
1384:
1114:
1088:
The MODFET (modulation-doped field-effect transistor) is a
1052:
483:
167:
in 1934, but they were unable to build a working practical
43:
Cross-sectional view of a field-effect transistor, showing
3707:
Winning the Battle Against Latchup in CMOS Analog Switches
2145:"The mechanisms for silicon oxidation in steam and oxygen"
879:
In June 2011, IBM announced that it had successfully used
454:
H. K. Gummel and R. Lindner who characterized the device.
2941:
2921:. Englewood Cliffs, NJ: Prentice Hall. pp. 315–316.
1254:
407:
1198:
at both the source-channel and drain-channel interfaces.
435:
thermally grown oxides and fabricated a high quality Si/
195:, but was unsuccessful, mainly due to problems with the
2966:
1973:
1485:"Method and apparatus for controlling electric current"
1301:). However, modern FET devices can often incorporate a
1096:
structure formed by graded doping of the active region.
529:(fin field-effect transistor), a type of 3D non-planar
3191:
2219:. Springer Science & Business Media. p. 322.
1953:. Springer Science & Business Media. p. 324.
1554:
1510:
The Design of CMOS Radio-Frequency Integrated Circuits
1406:). With this concept, one can construct a solid-state
246:
in 1953. However, the JFET still had issues affecting
222:
The first FET device to be successfully built was the
3514:"What Are Graphene Field Effect Transistors (GFETs)?"
3306:
Physica E: Low-dimensional Systems and Nanostructures
3027:"IBM creates first graphene based integrated circuit"
2919:
Electronic circuits: analysis, simulation, and design
2691:. Springer Science & Business Media. p. 11.
1891:
Christophe Lécuyer; David C. Brook; Jay Last (2010).
134:(metal–oxide–semiconductor field-effect transistor).
2184:"Highlights Of Silicon Thermal Oxidation Technology"
693:
547:
Charge carrier § Majority and minority carriers
2589:
2383:Motoyoshi, M. (2009). "Through-Silicon Via (TSV)".
1998:
525:researchers Toshihiro Sekigawa and Yutaka Hayashi.
3691:How Semiconductors and Transistors Work (MOSFETs)
3562:
3130:Schöning, Michael J.; Poghossian, Arshak (2002).
3002:Analysis and design of analog integrated circuits
2766:Institute of Electrical and Electronics Engineers
2056:"Frosch and Derick: Fifty Years Later (Foreword)"
1585:
4935:
1782:
3712:Field Effect Transistors in Theory and Practice
3106:"Flexible graphene transistor sets new records"
2916:
2884:MOSFET modeling for circuit analysis and design
2711:
2649:
2643:
2280:IRE-AIEE Solid State Device Research Conference
1276:A field-effect transistor has a relatively low
1184:) uses an organic semiconductor in its channel.
3000:PR Gray; PJ Hurst; SH Lewis; RG Meyer (2001).
2570:
2142:
2030:. Johns Hopkins University Press. p. 22.
1815:Crystal Fire: The Birth of the Information Age
1735:
1710:
969:) or DGMOS, a MOSFET with two insulated gates.
634:. Most FETs have a fourth terminal called the
3899:
3749:
3338:
2854:
2819:
2143:Ligenza, J. R.; Spitzer, W. G. (1960-07-01).
2092:
2054:Huff, Howard; Riordan, Michael (2007-09-01).
1837:
1062:(SIT) is a type of JFET with a short channel.
3366:Appenzeller J, et al. (November 2008).
2859:. Singapore: McGraw-Hill. pp. 384–385.
2111:
1859:
1613:Semiconductor Devices for Power Conditioning
1021:(ImmunoFETs), gene-modified FETs (GenFETs),
992:metal–nitride–oxide–semiconductor transistor
793:Effect of drain-to-source voltage on channel
3365:
2880:Galup-Montoro, C.; Schneider, M.C. (2007).
2270:
2053:
1762:. The Electrochemical Society. p. 43.
1646:
1644:
1642:
1640:
1347:. Unsourced material may be challenged and
175:effect was later observed and explained by
3906:
3892:
3756:
3742:
3103:
2993:
2850:
2848:
2233:
2149:Journal of Physics and Chemistry of Solids
1813:Michael Riordan; Lillian Hoddeson (1997).
1420:
1229:Vertical-Transport Field-Effect Transistor
856:Among the more unusual body materials are
215:in 1947, which was followed by Shockley's
27:"FET" redirects here. For other uses, see
3913:
3763:
3658:
3511:
3488:
3446:
3024:
2580:
2549:United States Patent and Trademark Office
2382:
2327:Technical Memorandum of Bell Laboratories
2017:
1720:
1650:
1610:
1367:Learn how and when to remove this message
618:terminals that correspond roughly to the
521:MOSFET was first demonstrated in 1984 by
2813:
2688:FinFETs and Other Multi-Gate Transistors
2538:
2536:
2323:"Silicon-Silicon Dioxide Surface Device"
2188:Silicon materials science and technology
1637:
1402:switching analog signals between paths (
1235:to allow higher density and lower power.
894:
724:
721:for this device lies around 0.45 V.
705:
697:
597:
417:
147:
38:
2845:
2756:"IEEE Andrew S. Grove Award Recipients"
2684:
2485:High Performance Audio Power Amplifiers
2239:
2023:
1755:
1729:
1175:carbon nanotube field-effect transistor
1159:organic memory field-effect transistor.
806:; although some authors refer to it as
593:
14:
4936:
3587:
2481:
2118:Journal of the Electrochemical Society
1917:
1866:Journal of the Electrochemical Society
1675:
1032:) is a specialized FET that acts as a
408:Metal-oxide-semiconductor FET (MOSFET)
3887:
3737:
3567:. New Delhi: Prentice-Hall of India.
3565:Electronic devices and siraj circuits
3372:IEEE Transactions on Electron Devices
2652:IEEE Transactions on Electron Devices
2640:, vol. 46, no. 4, 1967, pp. 1288–1295
2533:
2506:
2357:
2320:
2214:
2060:The Electrochemical Society Interface
2049:
2047:
1948:
1855:
1853:
1502:
1500:
1103:) is based on band-to-band tunneling.
864:or other amorphous semiconductors in
226:(JFET). A JFET was first patented by
91:(MOSFET). FETs have three terminals:
4338:Three-dimensional integrated circuit
3248:
2942:Spencer, R.R.; Ghausi, M.S. (2001).
2427:"Transistors Keep Moore's Law Alive"
2360:History of Semiconductor Engineering
2217:History of Semiconductor Engineering
2181:
2175:
1951:History of Semiconductor Engineering
1706:
1704:
1548:
1345:adding citations to reliable sources
1312:
540:
513:(TFT) was proposed by H. R. Farrah (
4119:Programmable unijunction transistor
3723:"The FET (field effect transistor)"
3249:Dumé, Isabelle (12 December 2018).
1506:
1125:in a ternary semiconductor such as
844:semiconductor processing techniques
535:Hitachi Central Research Laboratory
24:
4020:Multi-gate field-effect transistor
2967:Sedra, A. S.; Smith, K.C. (2004).
2044:
1850:
1604:
1497:
1379:The most commonly used FET is the
853:as the active region, or channel.
25:
4990:
3998:Insulated-gate bipolar transistor
3679:
3345:. World Scientific. p. 244.
2638:The Bell System Technical Journal
2112:Frosch, C. J.; Derick, L (1957).
1860:Frosch, C. J.; Derick, L (1957).
1701:
1414:(source follower) configuration.
1119:high-electron-mobility transistor
1090:high-electron-mobility transistor
994:) utilizes a nitride-oxide layer
974:insulated-gate bipolar transistor
694:Effect of gate voltage on current
602:Cross section of an n-type MOSFET
517:) and R. F. Steinberg in 1967. A
4242:Heterostructure barrier varactor
3969:Chemical field-effect transistor
3812:
3776:
3697:Junction Field Effect Transistor
2575:. Vol. 550. pp. 3–32.
1974:Stefan Ferdinand Müller (2016).
1759:ULSI Science and Technology/1997
1715:. Vol. 550. pp. 3–32.
1435:Chemical field-effect transistor
1317:
1292:
1271:
1144:; and is used in GaAs and other
985:Junctionless nanowire transistor
870:organic field-effect transistors
777:
744:
665:. The size of the gate, length
224:junction field-effect transistor
4290:Mixed-signal integrated circuit
3686:PBS The Field Effect Transistor
3618:
3606:
3581:
3556:
3545:
3531:
3505:
3422:
3359:
3332:
3297:
3269:
3242:
3185:
3182:, HIGFET and method - Motorola]
3173:
3123:
3104:Belle Dumé (10 December 2012).
3097:
3046:
3018:
2960:
2935:
2910:
2873:
2857:Electronic devices and circuits
2825:Electronic devices and circuits
2784:
2748:
2705:
2678:
2630:
2627:, filed in 1960, issued in 1963
2616:
2564:
2519:National Inventors Hall of Fame
2475:
2447:
2419:
2376:
2351:
2314:
2286:
2264:
2208:
2136:
2105:
2086:
1992:
1967:
1942:
1911:
1884:
1831:
1806:
1776:
1749:
1189:quantum field effect transistor
1182:organic field-effect transistor
653:This fourth terminal serves to
563:The FET's three terminals are:
498:in 1963. The first report of a
2455:"Who Invented the Transistor?"
2248:Johns Hopkins University Press
1999:B.G Lowe; R.A. Sareen (2013).
1817:. W. W. Norton & Company.
1651:Moskowitz, Sanford L. (2016).
1615:. Springer. pp. 241–272.
1579:
1477:
1101:tunnel field-effect transistor
998:between the gate and the body.
833:
578:. Drain-to-source voltage is V
476:US Patent and Trademark Office
107:between the drain and source.
13:
1:
3368:"Toward Nanowire Electronics"
3025:Bob Yirka (10 January 2011).
2001:Semiconductor X-Ray Detectors
1897:. MIT Press. pp. 62–63.
1588:The Physics of Semiconductors
1470:
1239:
1231:, IBM's 2021 modification of
733:The FET controls the flow of
729:FET conventional symbol types
89:metal-oxide-semiconductor FET
4321:Silicon controlled rectifier
4183:Organic light-emitting diode
4073:Diffused junction transistor
3552:VIII.5. Noise in Transistors
2734:10.1016/0038-1101(84)90036-4
2161:10.1016/0022-3697(60)90219-5
1621:10.1007/978-1-4684-7263-9_11
1450:Field effect (semiconductor)
1078:, especially medium-powered
938:to produce either an n-type
848:single crystal semiconductor
502:was made by Dawon Kahng and
7:
4125:Static induction transistor
4062:Bipolar junction transistor
4014:MOS field-effect transistor
3986:Fin field-effect transistor
3863:Complementary feedback pair
3785:Bipolar junction transistor
3588:Bhalla, Anup (2021-09-17).
3326:10.1016/j.physe.2011.04.018
2240:Bassett, Ross Knox (2007).
2192:The Electrochemical Society
2024:Bassett, Ross Knox (2007).
1926:The Electrochemical Society
1756:Massoud, Hisham Z. (1997).
1428:
1262:bipolar junction transistor
1247:bipolar junction transistor
1060:static induction transistor
1030:DNA field-effect transistor
523:Electrotechnical Laboratory
261:bipolar junction transistor
232:static induction transistor
217:bipolar junction transistor
10:
4995:
4332:Static induction thyristor
3563:Allen Mottershead (2004).
3465:10.1038/s41598-017-12816-3
2761:IEEE Andrew S. Grove Award
2573:AIP Conference Proceedings
2397:10.1109/JPROC.2008.2007462
2335:10.1142/9789814503464_0076
1713:AIP Conference Proceedings
1586:Grundmann, Marius (2010).
1518:Cambridge University Press
872:(OFETs) that are based on
544:
506:in 1967. The concept of a
411:
171:based on the concept. The
141:
137:
83:. It comes in two types:
26:
4869:
4769:
4736:
4668:
4605:
4533:
4501:(Hexode, Heptode, Octode)
4439:
4371:
4253:Hybrid integrated circuit
4217:
4145:
4096:Light-emitting transistor
4050:
3932:
3921:
3850:
3821:
3810:
3783:
3774:
2829:McGraw-Hill International
1978:. BoD – Books on Demand.
1800:10.1080/07341519408581858
468:communications technology
445:Following this research,
144:History of the transistor
4949:Field-effect transistors
4548:Backward-wave oscillator
4258:Light emitting capacitor
4114:Point-contact transistor
4084:Junction Gate FET (JFET)
3392:10.1109/ted.2008.2008011
2971:Microelectronic circuits
2944:Microelectronic circuits
2917:Norbert R Malik (1995).
934:The channel of a FET is
890:
822:a resistance similar to
305:point-contact transistor
213:point-contact transistor
4979:South Korean inventions
4559:Crossed-field amplifier
4078:Field-effect transistor
3823:Field-effect transistor
3075:10.1126/science.1204428
2714:Solid-State Electronics
2672:10.1109/T-ED.1967.15901
2602:Computer History Museum
2460:Computer History Museum
2385:Proceedings of the IEEE
2302:Computer History Museum
2182:Deal, Bruce E. (1998).
1918:Claeys, Cor L. (2003).
1687:Computer History Museum
1507:Lee, Thomas H. (2003).
1421:Source-gated transistor
1308:
1283:electrostatic discharge
943:Types of FETs include:
862:polycrystalline silicon
828:constant-current source
496:Fairchild Semiconductor
255:prevented the external
161:Julius Edgar Lilienfeld
153:Julius Edgar Lilienfeld
110:FETs are also known as
75:to control the flow of
61:field-effect transistor
18:Field effect transistor
4728:Voltage-regulator tube
4295:MOS integrated circuit
4160:Constant-current diode
4136:Unijunction transistor
3693:WeCanFigureThisOut.org
3594:Power Electronics News
3339:Jerzy Ruzyllo (2016).
2855:Jacob Millman (1985).
2685:Colinge, J.P. (2008).
1788:History and Technology
1742:Designing Analog Chips
1278:gain–bandwidth product
931:
874:organic semiconductors
730:
722:
703:
603:
423:
358:Shockley Semiconductor
181:Walter Houser Brattain
156:
56:
4797:Electrolytic detector
4570:Inductive output tube
4386:Low-dropout regulator
4301:Organic semiconductor
4232:Printed circuit board
4068:Darlington transistor
3915:Electronic components
3858:Darlington transistor
3851:Multiple transistors:
3180:freepatentsonline.com
2624:U.S. patent 3,102,230
1659:John Wiley & Sons
1563:John Wiley & Sons
1264:or with non-latching
1108:topological insulator
898:
866:thin-film transistors
728:
709:
701:
601:
421:
371:filed a patent for a
169:semiconducting device
151:
142:Further information:
42:
4969:Hungarian inventions
4615:Beam deflection tube
4284:Metal-oxide varistor
4177:Light-emitting diode
4031:Thin-film transistor
3992:Floating-gate MOSFET
2888:. London/Singapore:
2772:on September 9, 2018
2482:Duncan, Ben (1996).
1341:improve this section
1251:low-noise amplifiers
594:More about terminals
511:thin-film transistor
500:floating-gate MOSFET
380:. In February 1957,
378:floating gate MOSFET
248:junction transistors
183:while working under
128:high input impedance
112:unipolar transistors
29:FET (disambiguation)
4974:Japanese inventions
4964:Egyptian inventions
4959:Austrian inventions
4591:Traveling-wave tube
4391:Switching regulator
4227:Printed electronics
4204:Step recovery diode
3981:Depletion-load NMOS
3702:CMOS gate circuitry
3643:2014NatSR...4E4295S
3457:2017NatSR...712596P
3384:2008ITED...55.2827A
3318:2011PhyE...43.1509S
3220:10.1038/nature10679
3212:2011Natur.479..329I
3151:2002Ana...127.1137S
3067:2011Sci...332.1294L
3061:(6035): 1294–1297.
2726:1984SSEle..27..827S
2664:1967ITED...14...69F
1590:. Springer-Verlag.
1392:integrated circuits
1222:non-volatile memory
1164:graphene nanoribbon
1146:III-V semiconductor
1140:of the JFET with a
1123:bandgap engineering
1080:brushless DC motors
432:surface passivation
384:filed a patent for
4896:Crystal oscillator
4756:Variable capacitor
4431:Switched capacitor
4373:Voltage regulators
4247:Integrated circuit
4131:Tetrode transistor
4109:Pentode transistor
4102:Organic LET (OLET)
4089:Organic FET (OFET)
3631:Scientific Reports
3435:Scientific Reports
3285:. January 29, 2010
2435:. 12 December 2018
2358:Lojek, Bo (2007).
2321:KAHNG, D. (1961).
2298:The Silicon Engine
2250:. pp. 22–23.
2215:Lojek, Bo (2007).
2072:10.1149/2.F02073IF
1949:Lojek, Bo (2007).
1928:. pp. 27–30.
1490:2022-04-09 at the
1396:process technology
932:
885:integrated circuit
883:-based FETs in an
731:
723:
704:
680:transmission gates
663:integrated circuit
604:
515:Bendix Corporation
424:
390:germanium monoxide
263:(BJT) technology.
236:Jun-ichi Nishizawa
157:
57:
36:Type of transistor
4931:
4930:
4891:Ceramic resonator
4703:Mercury-arc valve
4655:Video camera tube
4607:Cathode-ray tubes
4367:
4366:
3975:Complementary MOS
3881:
3880:
3651:10.1038/srep04295
3574:978-81-203-0124-5
3378:(11): 2827–2845.
3352:978-981-4749-56-5
3206:(7373): 329–337.
3011:978-0-471-32168-2
2986:978-0-19-514251-8
2953:978-0-201-36183-4
2928:978-0-02-374910-0
2903:978-981-256-810-6
2866:978-0-07-085505-2
2838:978-0-07-085505-2
2698:978-0-387-71751-7
2582:10.1063/1.1354371
2499:978-0-08-050804-7
2463:. 4 December 2013
2369:978-3-540-34258-8
2344:978-981-02-0209-5
2257:978-0-8018-8639-3
2130:10.1149/1.2428650
2037:978-0-8018-8639-3
2010:978-1-4665-5401-6
1985:978-3-7392-4894-3
1960:978-3-540-34258-8
1935:978-1-56677-376-8
1904:978-0-262-01424-3
1878:10.1149/1.2428650
1824:978-0-393-04124-8
1769:978-1-56677-130-6
1722:10.1063/1.1354371
1668:978-0-470-50892-3
1630:978-1-4684-7265-3
1597:978-3-642-13884-3
1572:978-3-527-34053-8
1527:978-1-139-64377-1
1483:Lilienfeld, J.E.
1377:
1376:
1369:
1196:Schottky barriers
858:amorphous silicon
768:threshold voltage
719:threshold voltage
541:Basic information
404:as an insulator.
16:(Redirected from
4986:
4944:Transistor types
4785:electrical power
4670:Gas-filled tubes
4554:Cavity magnetron
4381:Linear regulator
3930:
3929:
3908:
3901:
3894:
3885:
3884:
3873:Long-tailed pair
3816:
3799:Common collector
3780:
3758:
3751:
3744:
3735:
3734:
3730:
3673:
3672:
3662:
3622:
3616:
3610:
3604:
3603:
3601:
3600:
3585:
3579:
3578:
3560:
3554:
3549:
3543:
3535:
3529:
3528:
3526:
3524:
3509:
3503:
3502:
3492:
3450:
3426:
3420:
3419:
3363:
3357:
3356:
3336:
3330:
3329:
3312:(8): 1509–1513.
3301:
3295:
3294:
3292:
3290:
3273:
3267:
3266:
3264:
3262:
3257:. IOP Publishing
3246:
3240:
3239:
3192:Ionescu, A. M.;
3189:
3183:
3177:
3171:
3170:
3159:10.1039/B204444G
3145:(9): 1137–1151.
3136:
3127:
3121:
3120:
3118:
3116:
3101:
3095:
3094:
3050:
3044:
3043:
3041:
3039:
3022:
3016:
3015:
2997:
2991:
2990:
2974:
2964:
2958:
2957:
2939:
2933:
2932:
2914:
2908:
2907:
2890:World Scientific
2887:
2877:
2871:
2870:
2852:
2843:
2842:
2817:
2811:
2810:
2808:
2806:
2796:
2788:
2782:
2781:
2779:
2777:
2768:. Archived from
2752:
2746:
2745:
2709:
2703:
2702:
2682:
2676:
2675:
2647:
2641:
2634:
2628:
2626:
2620:
2614:
2613:
2611:
2609:
2593:
2587:
2586:
2584:
2568:
2562:
2561:
2559:
2557:
2540:
2531:
2530:
2528:
2526:
2510:
2504:
2503:
2479:
2473:
2472:
2470:
2468:
2451:
2445:
2444:
2442:
2440:
2423:
2417:
2416:
2380:
2374:
2373:
2355:
2349:
2348:
2318:
2312:
2311:
2309:
2308:
2290:
2284:
2283:
2268:
2262:
2261:
2237:
2231:
2230:
2212:
2206:
2205:
2179:
2173:
2172:
2140:
2134:
2133:
2109:
2103:
2102:
2101:
2097:
2090:
2084:
2083:
2051:
2042:
2041:
2021:
2015:
2014:
1996:
1990:
1989:
1971:
1965:
1964:
1946:
1940:
1939:
1915:
1909:
1908:
1888:
1882:
1881:
1857:
1848:
1847:
1846:
1842:
1835:
1829:
1828:
1810:
1804:
1803:
1784:Lillian Hoddeson
1780:
1774:
1773:
1753:
1747:
1746:
1733:
1727:
1726:
1724:
1708:
1699:
1698:
1696:
1694:
1679:
1673:
1672:
1648:
1635:
1634:
1608:
1602:
1601:
1583:
1577:
1576:
1552:
1546:
1545:
1543:
1542:
1536:
1530:. Archived from
1515:
1504:
1495:
1481:
1465:Multigate device
1372:
1365:
1361:
1358:
1352:
1321:
1313:
1207:chemical sensors
1166:for its channel.
1142:Schottky barrier
967:dual-gate MOSFET
927:
921:
915:
909:
903:
819:depletion region
764:depletion region
755:depletion region
717:. Note that the
459:high scalability
338:with a layer of
325:Philo Farnsworth
321:relaxation times
309:Lillian Hoddeson
268:William Shockley
185:William Shockley
21:
4994:
4993:
4989:
4988:
4987:
4985:
4984:
4983:
4954:Arab inventions
4934:
4933:
4932:
4927:
4865:
4780:audio and video
4765:
4732:
4664:
4601:
4529:
4510:Photomultiplier
4435:
4363:
4311:Quantum circuit
4219:
4213:
4155:Avalanche diode
4141:
4053:
4046:
3935:
3924:
3917:
3912:
3882:
3877:
3846:
3817:
3808:
3781:
3770:
3762:
3721:
3682:
3677:
3676:
3623:
3619:
3611:
3607:
3598:
3596:
3586:
3582:
3575:
3561:
3557:
3550:
3546:
3536:
3532:
3522:
3520:
3512:Miklos, Bolza.
3510:
3506:
3427:
3423:
3364:
3360:
3353:
3337:
3333:
3302:
3298:
3288:
3286:
3275:
3274:
3270:
3260:
3258:
3247:
3243:
3190:
3186:
3178:
3174:
3134:
3128:
3124:
3114:
3112:
3102:
3098:
3051:
3047:
3037:
3035:
3023:
3019:
3012:
2998:
2994:
2987:
2965:
2961:
2954:
2940:
2936:
2929:
2915:
2911:
2904:
2878:
2874:
2867:
2853:
2846:
2839:
2831:. p. 397.
2818:
2814:
2804:
2802:
2794:
2790:
2789:
2785:
2775:
2773:
2754:
2753:
2749:
2710:
2706:
2699:
2683:
2679:
2648:
2644:
2635:
2631:
2622:
2621:
2617:
2607:
2605:
2595:
2594:
2590:
2569:
2565:
2555:
2553:
2552:. June 10, 2019
2542:
2541:
2534:
2524:
2522:
2512:
2511:
2507:
2500:
2492:. p. 177.
2480:
2476:
2466:
2464:
2453:
2452:
2448:
2438:
2436:
2425:
2424:
2420:
2381:
2377:
2370:
2356:
2352:
2345:
2319:
2315:
2306:
2304:
2292:
2291:
2287:
2269:
2265:
2258:
2238:
2234:
2227:
2213:
2209:
2202:
2194:. p. 183.
2180:
2176:
2141:
2137:
2110:
2106:
2099:
2091:
2087:
2052:
2045:
2038:
2022:
2018:
2011:
1997:
1993:
1986:
1972:
1968:
1961:
1947:
1943:
1936:
1916:
1912:
1905:
1889:
1885:
1858:
1851:
1844:
1836:
1832:
1825:
1811:
1807:
1781:
1777:
1770:
1754:
1750:
1734:
1730:
1709:
1702:
1692:
1690:
1681:
1680:
1676:
1669:
1661:. p. 168.
1649:
1638:
1631:
1609:
1605:
1598:
1584:
1580:
1573:
1553:
1549:
1540:
1538:
1534:
1528:
1513:
1505:
1498:
1492:Wayback Machine
1482:
1478:
1473:
1431:
1423:
1373:
1362:
1356:
1353:
1338:
1322:
1311:
1295:
1274:
1242:
1076:electric motors
960:
929:
928: Insulator
925:
923:
919:
917:
913:
911:
910: Electrons
907:
905:
904: Depletion
901:
893:
836:
804:saturation mode
795:
780:
747:
696:
659:physical layout
596:
588:
581:
577:
570:
549:
543:
442:stack in 1960.
440:
416:
410:
402:silicon dioxide
340:silicon dioxide
289:surface physics
276:Walter Brattain
252:mass-production
240:George C. Dacey
228:Heinrich Welker
163:in 1925 and by
146:
140:
124:charge carriers
122:(p-channel) as
118:(n-channel) or
67:) is a type of
37:
32:
23:
22:
15:
12:
11:
5:
4992:
4982:
4981:
4976:
4971:
4966:
4961:
4956:
4951:
4946:
4929:
4928:
4926:
4925:
4924:
4923:
4918:
4908:
4903:
4898:
4893:
4888:
4887:
4886:
4875:
4873:
4867:
4866:
4864:
4863:
4862:
4861:
4859:Wollaston wire
4851:
4846:
4841:
4836:
4831:
4826:
4825:
4824:
4819:
4809:
4804:
4799:
4794:
4793:
4792:
4787:
4782:
4773:
4771:
4767:
4766:
4764:
4763:
4758:
4753:
4752:
4751:
4740:
4738:
4734:
4733:
4731:
4730:
4725:
4720:
4715:
4710:
4705:
4700:
4695:
4690:
4685:
4680:
4674:
4672:
4666:
4665:
4663:
4662:
4657:
4652:
4647:
4642:
4640:Selectron tube
4637:
4632:
4630:Magic eye tube
4627:
4622:
4617:
4611:
4609:
4603:
4602:
4600:
4599:
4594:
4588:
4583:
4578:
4573:
4567:
4562:
4556:
4551:
4544:
4542:
4531:
4530:
4528:
4527:
4522:
4517:
4512:
4507:
4502:
4496:
4491:
4486:
4481:
4476:
4471:
4466:
4461:
4456:
4451:
4445:
4443:
4437:
4436:
4434:
4433:
4428:
4423:
4418:
4413:
4408:
4403:
4398:
4393:
4388:
4383:
4377:
4375:
4369:
4368:
4365:
4364:
4362:
4361:
4356:
4351:
4346:
4341:
4335:
4329:
4324:
4318:
4313:
4308:
4303:
4298:
4292:
4287:
4281:
4276:
4271:
4266:
4261:
4255:
4250:
4244:
4239:
4234:
4229:
4223:
4221:
4215:
4214:
4212:
4211:
4206:
4201:
4199:Schottky diode
4196:
4191:
4186:
4180:
4174:
4168:
4163:
4157:
4151:
4149:
4143:
4142:
4140:
4139:
4133:
4128:
4122:
4116:
4111:
4106:
4105:
4104:
4093:
4092:
4091:
4086:
4075:
4070:
4065:
4058:
4056:
4048:
4047:
4045:
4044:
4039:
4034:
4028:
4023:
4017:
4011:
4006:
4001:
3995:
3989:
3983:
3978:
3972:
3966:
3961:
3956:
3951:
3946:
3940:
3938:
3927:
3919:
3918:
3911:
3910:
3903:
3896:
3888:
3879:
3878:
3876:
3875:
3870:
3865:
3860:
3854:
3852:
3848:
3847:
3845:
3844:
3839:
3834:
3828:
3826:
3819:
3818:
3811:
3809:
3807:
3806:
3801:
3796:
3794:Common emitter
3790:
3788:
3782:
3775:
3772:
3771:
3761:
3760:
3753:
3746:
3738:
3732:
3731:
3719:
3714:
3709:
3704:
3699:
3694:
3688:
3681:
3680:External links
3678:
3675:
3674:
3617:
3605:
3580:
3573:
3555:
3544:
3530:
3504:
3421:
3358:
3351:
3331:
3296:
3268:
3241:
3184:
3172:
3122:
3096:
3045:
3017:
3010:
2992:
2985:
2959:
2952:
2934:
2927:
2909:
2902:
2872:
2865:
2844:
2837:
2812:
2783:
2747:
2720:(8): 827–828.
2704:
2697:
2677:
2642:
2629:
2615:
2588:
2563:
2532:
2505:
2498:
2474:
2446:
2418:
2375:
2368:
2350:
2343:
2313:
2285:
2263:
2256:
2232:
2226:978-3540342588
2225:
2207:
2201:978-1566771931
2200:
2174:
2135:
2104:
2085:
2043:
2036:
2016:
2009:
1991:
1984:
1966:
1959:
1941:
1934:
1910:
1903:
1883:
1849:
1830:
1823:
1805:
1794:(2): 121–130.
1775:
1768:
1748:
1737:Hans Camenzind
1728:
1700:
1689:. 13 July 2010
1674:
1667:
1636:
1629:
1603:
1596:
1578:
1571:
1565:. p. 14.
1547:
1526:
1496:
1475:
1474:
1472:
1469:
1468:
1467:
1462:
1457:
1452:
1447:
1442:
1437:
1430:
1427:
1422:
1419:
1375:
1374:
1357:September 2018
1325:
1323:
1316:
1310:
1307:
1294:
1291:
1273:
1270:
1241:
1238:
1237:
1236:
1225:
1210:
1199:
1192:
1185:
1178:
1171:
1167:
1160:
1149:
1130:
1111:
1104:
1097:
1086:
1083:
1074:loads such as
1068:
1065:
1064:
1063:
1049:
1048:
1047:
1037:
1026:
1010:
999:
988:
981:
970:
965:The DGMOSFET (
958:
924:
918:
912:
906:
900:
892:
889:
835:
832:
794:
791:
779:
776:
746:
743:
739:electron holes
695:
692:
606:All FETs have
595:
592:
591:
590:
586:
583:
579:
575:
572:
568:
558:ohmic contacts
542:
539:
447:Mohamed Atalla
438:
412:Main article:
409:
406:
369:Ian Munro Ross
323:. At the time
280:surface states
257:electric field
197:surface states
139:
136:
73:electric field
35:
9:
6:
4:
3:
2:
4991:
4980:
4977:
4975:
4972:
4970:
4967:
4965:
4962:
4960:
4957:
4955:
4952:
4950:
4947:
4945:
4942:
4941:
4939:
4922:
4921:mercury relay
4919:
4917:
4914:
4913:
4912:
4909:
4907:
4904:
4902:
4899:
4897:
4894:
4892:
4889:
4885:
4882:
4881:
4880:
4877:
4876:
4874:
4872:
4868:
4860:
4857:
4856:
4855:
4852:
4850:
4847:
4845:
4842:
4840:
4837:
4835:
4832:
4830:
4827:
4823:
4820:
4818:
4815:
4814:
4813:
4810:
4808:
4805:
4803:
4800:
4798:
4795:
4791:
4788:
4786:
4783:
4781:
4778:
4777:
4775:
4774:
4772:
4768:
4762:
4759:
4757:
4754:
4750:
4747:
4746:
4745:
4744:Potentiometer
4742:
4741:
4739:
4735:
4729:
4726:
4724:
4721:
4719:
4716:
4714:
4711:
4709:
4706:
4704:
4701:
4699:
4696:
4694:
4691:
4689:
4686:
4684:
4681:
4679:
4676:
4675:
4673:
4671:
4667:
4661:
4660:Williams tube
4658:
4656:
4653:
4651:
4648:
4646:
4643:
4641:
4638:
4636:
4633:
4631:
4628:
4626:
4623:
4621:
4618:
4616:
4613:
4612:
4610:
4608:
4604:
4598:
4595:
4592:
4589:
4587:
4584:
4582:
4579:
4577:
4574:
4571:
4568:
4566:
4563:
4560:
4557:
4555:
4552:
4549:
4546:
4545:
4543:
4540:
4536:
4532:
4526:
4523:
4521:
4518:
4516:
4513:
4511:
4508:
4506:
4503:
4500:
4497:
4495:
4492:
4490:
4487:
4485:
4482:
4480:
4479:Fleming valve
4477:
4475:
4472:
4470:
4467:
4465:
4462:
4460:
4457:
4455:
4452:
4450:
4447:
4446:
4444:
4442:
4438:
4432:
4429:
4427:
4424:
4422:
4419:
4417:
4414:
4412:
4409:
4407:
4404:
4402:
4399:
4397:
4394:
4392:
4389:
4387:
4384:
4382:
4379:
4378:
4376:
4374:
4370:
4360:
4357:
4355:
4352:
4350:
4347:
4345:
4342:
4339:
4336:
4333:
4330:
4328:
4325:
4322:
4319:
4317:
4314:
4312:
4309:
4307:
4306:Photodetector
4304:
4302:
4299:
4296:
4293:
4291:
4288:
4285:
4282:
4280:
4277:
4275:
4274:Memtransistor
4272:
4270:
4267:
4265:
4262:
4259:
4256:
4254:
4251:
4248:
4245:
4243:
4240:
4238:
4235:
4233:
4230:
4228:
4225:
4224:
4222:
4216:
4210:
4207:
4205:
4202:
4200:
4197:
4195:
4192:
4190:
4187:
4184:
4181:
4178:
4175:
4172:
4169:
4167:
4164:
4161:
4158:
4156:
4153:
4152:
4150:
4148:
4144:
4137:
4134:
4132:
4129:
4126:
4123:
4120:
4117:
4115:
4112:
4110:
4107:
4103:
4100:
4099:
4097:
4094:
4090:
4087:
4085:
4082:
4081:
4079:
4076:
4074:
4071:
4069:
4066:
4063:
4060:
4059:
4057:
4055:
4049:
4043:
4040:
4038:
4035:
4032:
4029:
4027:
4024:
4021:
4018:
4015:
4012:
4010:
4007:
4005:
4002:
3999:
3996:
3993:
3990:
3987:
3984:
3982:
3979:
3976:
3973:
3970:
3967:
3965:
3962:
3960:
3957:
3955:
3952:
3950:
3947:
3945:
3942:
3941:
3939:
3937:
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3928:
3926:
3923:Semiconductor
3920:
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3897:
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3861:
3859:
3856:
3855:
3853:
3849:
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3835:
3833:
3832:Common source
3830:
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3800:
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3405:
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3327:
3323:
3319:
3315:
3311:
3307:
3300:
3284:
3283:
3278:
3272:
3256:
3255:Physics World
3252:
3245:
3237:
3233:
3229:
3225:
3221:
3217:
3213:
3209:
3205:
3201:
3200:
3195:
3188:
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3176:
3168:
3164:
3160:
3156:
3152:
3148:
3144:
3140:
3133:
3126:
3111:
3110:Physics World
3107:
3100:
3092:
3088:
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3076:
3072:
3068:
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3056:
3049:
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2886:
2885:
2876:
2868:
2862:
2858:
2851:
2849:
2840:
2834:
2830:
2827:. Singapore:
2826:
2822:
2821:Jacob Millman
2816:
2800:
2793:
2787:
2771:
2767:
2763:
2762:
2757:
2751:
2743:
2739:
2735:
2731:
2727:
2723:
2719:
2715:
2708:
2700:
2694:
2690:
2689:
2681:
2673:
2669:
2665:
2661:
2657:
2653:
2646:
2639:
2633:
2625:
2619:
2604:
2603:
2598:
2592:
2583:
2578:
2574:
2567:
2551:
2550:
2545:
2539:
2537:
2521:
2520:
2515:
2514:"Dawon Kahng"
2509:
2501:
2495:
2491:
2487:
2486:
2478:
2462:
2461:
2456:
2450:
2434:
2433:
2428:
2422:
2414:
2410:
2406:
2402:
2398:
2394:
2390:
2386:
2379:
2371:
2365:
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2328:
2324:
2317:
2303:
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2289:
2281:
2277:
2273:
2267:
2259:
2253:
2249:
2245:
2244:
2236:
2228:
2222:
2218:
2211:
2203:
2197:
2193:
2189:
2185:
2178:
2170:
2166:
2162:
2158:
2154:
2150:
2146:
2139:
2131:
2127:
2123:
2119:
2115:
2108:
2095:
2089:
2081:
2077:
2073:
2069:
2065:
2061:
2057:
2050:
2048:
2039:
2033:
2029:
2028:
2020:
2012:
2006:
2003:. CRC Press.
2002:
1995:
1987:
1981:
1977:
1970:
1962:
1956:
1952:
1945:
1937:
1931:
1927:
1923:
1922:
1914:
1906:
1900:
1896:
1895:
1887:
1879:
1875:
1871:
1867:
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1816:
1809:
1801:
1797:
1793:
1789:
1785:
1779:
1771:
1765:
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1760:
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1744:
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1738:
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1718:
1714:
1707:
1705:
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1678:
1670:
1664:
1660:
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1655:
1647:
1645:
1643:
1641:
1632:
1626:
1622:
1618:
1614:
1607:
1599:
1593:
1589:
1582:
1574:
1568:
1564:
1560:
1559:
1551:
1537:on 2019-12-09
1533:
1529:
1523:
1519:
1512:
1511:
1503:
1501:
1493:
1489:
1486:
1480:
1476:
1466:
1463:
1461:
1458:
1456:
1453:
1451:
1448:
1446:
1445:FET amplifier
1443:
1441:
1438:
1436:
1433:
1432:
1426:
1418:
1415:
1413:
1409:
1405:
1399:
1397:
1393:
1390:
1386:
1382:
1371:
1368:
1360:
1350:
1346:
1342:
1336:
1335:
1331:
1326:This section
1324:
1320:
1315:
1314:
1306:
1304:
1300:
1293:Failure modes
1290:
1286:
1284:
1279:
1272:Disadvantages
1269:
1267:
1263:
1258:
1256:
1252:
1248:
1234:
1230:
1226:
1223:
1219:
1218:ferroelectric
1215:
1211:
1208:
1204:
1200:
1197:
1193:
1190:
1186:
1183:
1179:
1176:
1172:
1168:
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1158:
1154:
1150:
1147:
1143:
1139:
1135:
1131:
1128:
1124:
1120:
1116:
1112:
1109:
1105:
1102:
1098:
1095:
1091:
1087:
1084:
1081:
1077:
1073:
1069:
1066:
1061:
1057:
1056:
1054:
1050:
1045:
1041:
1038:
1035:
1031:
1027:
1024:
1019:
1015:
1011:
1008:
1004:
1000:
997:
993:
989:
986:
982:
979:
978:Power MOSFETs
975:
971:
968:
964:
963:
961:
954:
950:
946:
945:
944:
941:
940:semiconductor
937:
897:
888:
886:
882:
877:
875:
871:
867:
863:
859:
854:
852:
849:
845:
841:
831:
829:
825:
820:
816:
811:
809:
805:
799:
790:
787:
785:
778:p-channel FET
775:
773:
769:
765:
759:
756:
752:
745:n-channel FET
742:
740:
736:
727:
720:
716:
713:
708:
700:
691:
687:
685:
681:
675:
674:30 GHz.
672:
668:
664:
660:
656:
652:
650:
645:
641:
637:
633:
629:
625:
621:
617:
613:
609:
600:
584:
573:
566:
565:
564:
561:
559:
555:
548:
538:
536:
532:
528:
524:
520:
516:
512:
509:
505:
501:
497:
493:
492:Frank Wanlass
489:
488:Chih-Tang Sah
485:
479:
477:
473:
469:
464:
460:
455:
452:
448:
443:
441:
433:
429:
420:
415:
405:
403:
399:
395:
391:
387:
383:
382:John Wallmark
379:
374:
370:
365:
363:
359:
354:
349:
345:
341:
337:
333:
328:
326:
322:
318:
312:
310:
306:
302:
298:
292:
290:
285:
281:
277:
273:
269:
264:
262:
258:
253:
249:
245:
241:
237:
233:
230:in 1945. The
229:
225:
220:
218:
214:
210:
206:
202:
201:dangling bond
198:
194:
193:semiconductor
190:
186:
182:
178:
174:
170:
166:
162:
154:
150:
145:
135:
133:
129:
125:
121:
117:
113:
108:
106:
102:
98:
94:
90:
86:
82:
81:semiconductor
78:
74:
71:that uses an
70:
66:
62:
54:
50:
46:
41:
34:
30:
19:
4678:Cold cathode
4645:Storage tube
4535:Vacuum tubes
4484:Neutron tube
4459:Beam tetrode
4441:Vacuum tubes
4077:
4026:Power MOSFET
3837:Common drain
3822:
3634:
3630:
3620:
3608:
3597:. Retrieved
3593:
3583:
3564:
3558:
3547:
3538:
3533:
3521:. Retrieved
3517:
3507:
3441:(1): 12596.
3438:
3434:
3424:
3375:
3371:
3361:
3341:
3334:
3309:
3305:
3299:
3287:. Retrieved
3282:ScienceDaily
3280:
3271:
3259:. Retrieved
3254:
3244:
3203:
3197:
3187:
3175:
3142:
3138:
3125:
3113:. Retrieved
3109:
3099:
3058:
3054:
3048:
3036:. Retrieved
3030:
3020:
3001:
2995:
2970:
2962:
2943:
2937:
2918:
2912:
2883:
2875:
2856:
2824:
2815:
2803:. Retrieved
2786:
2774:. Retrieved
2770:the original
2759:
2750:
2717:
2713:
2707:
2687:
2680:
2658:(2): 69–74.
2655:
2651:
2645:
2637:
2632:
2618:
2606:. Retrieved
2600:
2591:
2572:
2566:
2554:. Retrieved
2547:
2523:. Retrieved
2517:
2508:
2484:
2477:
2465:. Retrieved
2458:
2449:
2437:. Retrieved
2430:
2421:
2391:(1): 43–48.
2388:
2384:
2378:
2359:
2353:
2326:
2316:
2305:. Retrieved
2297:
2288:
2279:
2266:
2242:
2235:
2216:
2210:
2187:
2177:
2152:
2148:
2138:
2121:
2117:
2107:
2088:
2063:
2059:
2026:
2019:
2000:
1994:
1975:
1969:
1950:
1944:
1920:
1913:
1893:
1886:
1869:
1865:
1833:
1814:
1808:
1791:
1787:
1778:
1758:
1751:
1741:
1731:
1712:
1691:. Retrieved
1677:
1653:
1612:
1606:
1587:
1581:
1557:
1550:
1539:. Retrieved
1532:the original
1509:
1479:
1424:
1416:
1412:common-drain
1408:mixing board
1404:multiplexing
1400:
1378:
1363:
1354:
1339:Please help
1327:
1296:
1287:
1275:
1259:
1243:
1173:The CNTFET (
1157:nanoparticle
1138:p–n junction
1094:quantum well
1042:, including
1028:The DNAFET (
1007:pH electrode
933:
878:
855:
837:
812:
807:
803:
800:
796:
788:
783:
781:
771:
760:
750:
748:
732:
688:
676:
670:
666:
647:
643:
639:
635:
627:
623:
619:
615:
611:
607:
605:
562:
550:
480:
463:high-density
456:
444:
425:
366:
329:
313:
293:
272:John Bardeen
265:
221:
177:John Bardeen
158:
111:
109:
105:conductivity
100:
96:
92:
85:junction FET
64:
60:
58:
52:
48:
44:
33:
4844:Transformer
4586:Sutton tube
4426:Charge pump
4279:Memory cell
4209:Zener diode
4171:Laser diode
4054:transistors
3936:transistors
3842:Common gate
3804:Common base
3289:January 14,
2329:: 583–596.
2155:: 131–136.
955:(typically
922: Metal
916: Holes
834:Composition
808:active mode
519:double-gate
508:double-gate
472:smartphones
451:Dawon Kahng
428:Carl Frosch
394:double gate
362:Jean Hoerni
353:fabrication
344:passivating
332:Carl Frosch
244:Ian M. Ross
87:(JFET) and
4938:Categories
4916:reed relay
4906:Parametron
4839:Thermistor
4817:resettable
4776:Connector
4737:Adjustable
4713:Nixie tube
4683:Crossatron
4650:Trochotron
4625:Iconoscope
4620:Charactron
4597:X-ray tube
4469:Compactron
4449:Acorn tube
4406:Buck–boost
4327:Solaristor
4189:Photodiode
4166:Gunn diode
4162:(CLD, CRD)
3944:Transistor
3768:amplifiers
3765:Transistor
3599:2022-01-21
3523:14 January
3481:1010581463
3448:1707.01459
3261:16 January
3115:14 January
3038:14 January
2892:. p.
2307:2023-01-16
2272:Atalla, M.
2124:(9): 547.
2094:US2802760A
1872:(9): 547.
1839:US2802760A
1541:2019-07-20
1471:References
1303:body diode
1240:Advantages
1227:VTFET, or
1203:biosensors
1187:The QFET (
1180:The OFET (
1148:materials.
1099:The TFET (
990:The MNOS (
983:The JLNT (
972:The IGBT (
846:, using a
686:circuits.
545:See also:
531:multi-gate
346:effect of
317:adsorption
203:, and the
173:transistor
165:Oskar Heil
69:transistor
4879:Capacitor
4723:Trigatron
4718:Thyratron
4708:Neon lamp
4635:Monoscope
4515:Phototube
4499:Pentagrid
4464:Barretter
4349:Trancitor
4344:Thyristor
4269:Memristor
4194:PIN diode
3971:(ChemFET)
3518:Graphenea
3473:2045-2322
3408:755663637
3400:0018-9383
2742:0038-1101
2405:0018-9219
2276:Kahng, D.
2169:0022-3697
2080:1064-8208
2066:(3): 29.
1328:does not
1072:inductive
1034:biosensor
996:insulator
953:insulator
784:p-channel
772:inversion
751:n-channel
735:electrons
649:substrate
624:collector
537:in 1989.
504:Simon Sze
470:(such as
457:With its
426:In 1955,
398:Bell Labs
388:in which
367:In 1955,
348:oxidation
330:In 1955,
301:germanium
284:Igor Tamm
219:in 1948.
205:germanium
189:Bell Labs
116:electrons
55:terminals
4901:Inductor
4871:Reactive
4849:Varistor
4829:Resistor
4807:Antifuse
4693:Ignitron
4688:Dekatron
4576:Klystron
4565:Gyrotron
4494:Nuvistor
4411:Split-pi
4297:(MOS IC)
4264:Memistor
4022:(MuGFET)
4016:(MOSFET)
3988:(FinFET)
3669:24599023
3637:: 4295.
3541:Dec 2021
3499:28974712
3228:22094693
3194:Riel, H.
3167:12375833
3083:21659599
3032:Phys.org
2823:(1985).
2490:Elsevier
2413:29105721
1739:(2005).
1488:Archived
1429:See also
1299:derating
1092:using a
881:graphene
815:carriers
712:nanowire
4802:Ferrite
4770:Passive
4761:Varicap
4749:digital
4698:Krytron
4520:Tetrode
4505:Pentode
4359:Varicap
4340:(3D IC)
4316:RF CMOS
4220:devices
3994:(FGMOS)
3925:devices
3868:Cascode
3727:YouTube
3660:3944386
3639:Bibcode
3490:5626721
3453:Bibcode
3380:Bibcode
3314:Bibcode
3236:4322368
3208:Bibcode
3147:Bibcode
3139:Analyst
3091:3020496
3063:Bibcode
3055:Science
2722:Bibcode
2660:Bibcode
2556:20 July
2525:27 June
2467:20 July
2439:18 July
2432:EETimes
1693:21 July
1460:FlowFET
1394:. This
1389:digital
1349:removed
1334:sources
1216:uses a
1023:DNAFETs
840:silicon
824:silicon
684:cascode
620:emitter
474:). The
297:silicon
138:History
77:current
4834:Switch
4525:Triode
4489:Nonode
4454:Audion
4334:(SITh)
4218:Other
4185:(OLED)
4147:Diodes
4098:(LET)
4080:(FET)
4052:Other
4000:(IGBT)
3977:(CMOS)
3964:BioFET
3959:BiCMOS
3667:
3657:
3571:
3497:
3487:
3479:
3471:
3416:703393
3414:
3406:
3398:
3349:
3234:
3226:
3199:Nature
3165:
3089:
3081:
3008:
2983:
2950:
2925:
2900:
2863:
2835:
2805:4 July
2801:. 2014
2776:4 July
2740:
2695:
2608:6 July
2496:
2411:
2403:
2366:
2341:
2254:
2223:
2198:
2167:
2100:
2078:
2034:
2007:
1982:
1957:
1932:
1901:
1845:
1821:
1766:
1665:
1627:
1594:
1569:
1524:
1455:FinFET
1383:. The
1381:MOSFET
1266:relays
1233:finFET
1214:Fe FET
1153:NOMFET
1134:MESFET
1127:AlGaAs
1044:GAAFET
1040:finFET
1014:BioFET
949:MOSFET
926:
920:
914:
908:
902:
749:In an
715:MOSFET
661:of an
626:, and
614:, and
608:source
527:FinFET
414:MOSFET
209:copper
199:, the
132:MOSFET
99:, and
93:source
45:source
4911:Relay
4884:types
4822:eFUSE
4593:(TWT)
4581:Maser
4572:(IOT)
4561:(CFA)
4550:(BWO)
4474:Diode
4421:SEPIC
4401:Boost
4354:TRIAC
4323:(SCR)
4286:(MOV)
4260:(LEC)
4179:(LED)
4138:(UJT)
4127:(SIT)
4121:(PUT)
4064:(BJT)
4033:(TFT)
4009:LDMOS
4004:ISFET
3443:arXiv
3412:S2CID
3232:S2CID
3135:(PDF)
3087:S2CID
2799:Intel
2795:(PDF)
2409:S2CID
1535:(PDF)
1514:(PDF)
1170:slit.
1155:is a
1018:ISFET
1003:ISFET
936:doped
891:Types
851:wafer
782:In a
671:width
646:, or
612:drain
554:holes
373:FeFET
336:wafer
120:holes
101:drain
79:in a
53:drain
4854:Wire
4812:Fuse
4396:Buck
4249:(IC)
4237:DIAC
4173:(LD)
4042:UMOS
4037:VMOS
3954:PMOS
3949:NMOS
3934:MOS
3665:PMID
3569:ISBN
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