1665:
1644:(UV-EPROM), but the finished device is put into an opaque package, instead of the expensive ceramic package with transparent quartz window required for erasing. These devices are programmed with the same methods as the UV EPROM parts but are less costly. Embedded controllers may be available in both field-erasable and one-time styles, allowing a cost saving in volume production without the expense and lead time of factory-programmed mask ROM chips.
1620:(NVM) that permits data to be written to memory only once. Once the memory has been programmed, it retains its value upon loss of power (i.e., is non-volatile). OTP memory is used in applications where reliable and repeatable reading of data is required. Examples include boot code, encryption keys and configuration parameters for analog, sensor or display circuitry. OTP NVM is characterized, over other types of NVM like
1602:, referring to the process of programming a PROM, is also in the original patent, as one of the original implementations was to literally burn the internal whiskers of diodes with a current overload to produce a circuit discontinuity. The first PROM programming machines were also developed by Arma engineers under Chow's direction and were located in Arma's Garden City lab and Air Force
1677:) took advantage of this by defining a break (BRK) instruction with the operation code of '00'. In cases where there was an incorrect instruction, it could be "reprogrammed" to a BRK causing the CPU to transfer control to a patch. This would execute the correct instruction and return to the instruction after the BRK.
1652:
less than the junction breakdown, special diffusion steps were not required to create the antifuse programming element. In 2005, a split channel antifuse device was introduced by
Sidense. This split channel bit cell combines the thick (IO) and thin (gate) oxide devices into one transistor (1T) with a common
1651:
until 2001 when
Kilopass Technology Inc. patented 1T, 2T, and 3.5T antifuse bit cell technologies using a standard CMOS process, enabling integration of PROM into logic CMOS chips. The first process node antifuse can be implemented in standard CMOS is 0.18 um. Since the gate oxide breakdown is
1688:
MV/cm) to break down the oxide between gate and substrate. The positive voltage on the transistor's gate forms an inversion channel in the substrate below the gate, causing a tunneling current to flow through the oxide. The current produces additional traps in the oxide, increasing the current
1636:
breakdown antifuse in 1979. A dual-gate-oxide two-transistor (2T) MOS antifuse was introduced in 1982. Early oxide breakdown technologies exhibited a variety of scaling, programming, size and manufacturing problems that prevented volume production of memory devices based on these technologies.
1530:
is that the data is written into a ROM during manufacture, while with a PROM the data is programmed into them after manufacture. Thus, ROMs tend to be used only for large production runs with well-verified data. PROMs may be used where the volume required does not make a factory-programmed ROM
1672:
A typical PROM comes with all bits reading as "1". Burning a fuse bit during programming causes the bit to be read as "0" by "blowing" the fuses, which is an irreversible process. Some devices can be "reprogrammed" if the new data replaces "1"s with "0"s. Some CPU instruction sets (e.g.
1598:'s airborne digital computer. The patent and associated technology were held under secrecy order for several years while the Atlas E/F was the main operational missile of the United States ICBM force. The term
1627:
Commercially available semiconductor antifuse-based OTP memory arrays have been around at least since 1969, with initial antifuse bit cells dependent on blowing a capacitor between crossing conductive lines.
1624:
or EEPROM, by offering a low power, small area footprint memory structure. As such OTP memory finds application in products from microprocessors & display drivers to Power
Management ICs (PMICs).
1534:
PROMs are manufactured blank and, depending on the technology, can be programmed at wafer, final test, or in system. Blank PROM chips are programmed by plugging them into a device called a
1955:
View
Kilopass Technology Patent US "High density semiconductor memory cell and memory array using a single transistor and having variable gate oxide breakdown" Patent #6940751 at
2007:
1689:
through the oxide and ultimately melting the oxide and forming a conductive channel from gate to substrate. The current required to form the conductive channel is around 100
1538:. Companies can keep a supply of blank PROMs in stock, and program them at the last minute to avoid large volume commitment. These types of memories are frequently used in
1680:
The bit cell is programmed by applying a high-voltage pulse not encountered during a normal operation across the gate and substrate of the thin oxide transistor (around 6
1554:) and in many other consumer and automotive electronics products. A typical PROM device is made up of an array of memory cells, each made up of a transistor, which is a
1514:) is a form of digital memory where the contents can be changed once after manufacture of the device. The data is then permanent and cannot be changed. It is one type of
1892:
601:
2012:
For the
Advantages and Disadvantages table, see Ramamoorthy, G: "Dataquest Insight: Nonvolatile Memory IP Market, Worldwide, 2008-2013", page 10. Gartner, 2009
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1805:
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Business
Intelligence: Second European Summer School, eBISS 2012, Brussels, Belgium, July 15-21, 2012, Tutorial Lectures
1240:
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economical, or during development of a system that may ultimately be converted to ROMs in a mass produced version.
90:
1518:(ROM). PROMs are used in digital electronic devices to store permanent data, usually low level programs such as
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in the emitter of the transistor. A PROM programmer is used to blow the polyfuse, programming the PROM.
648:
1640:
Another form of one-time programmable memory device uses the same semiconductor chip as an ultraviolet-
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to come up with a more flexible and secure way of storing the targeting constants in the Atlas E/F
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Ken Arnold, "Embedded
Controller Hardware Design", Newnes, 2004, ISBN 1-878707-52-3, page 102
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1647:
Although antifuse-based PROM has been available for decades, it wasn’t available in standard
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1989:
View the US "Method of
Manufacturing Semiconductor Integrated Circuits" Patent #3634929 at
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Type of solid state computer memory that becomes read only after being written once
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View
Sidense US "Split Channel Antifuse Array Architecture" Patent #7402855 at
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1840:- Method of making a high density floating gate electrically programmable ROM
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1550:) tags, implantable medical devices, high-definition multimedia interfaces (
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Looking inside a 1970s PROM chip that stores data in microscopic fuse
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1829:- High density floating gate electrically programmable ROM, and
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1893:"Evaluating Embedded Non-Volatile Memory for 65nm and Beyond"
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2008:"New Non-Volatile Memory Structures for FPGA Architectures"
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1616:
OTP (one time programmable) memory is a special type of
1788:
Marie-Aude
Aufaure; Esteban Zimányi (17 January 2013).
1590:. The invention was conceived at the request of the
1890:
1781:
1546:, mobile phones, radio-frequency identification (
2047:
1697:nm and the breakdown occurs in approximately 100
1578:, working for the Arma Division of the American
1938:View the US "Switch Matrix" Patent #3028659 at
1611:
1756:
1484:
1852:. ChipEstimate.com. Retrieved on 2013-08-10.
1491:
1477:
1750:
1729:
1668:Texas Instruments PROM type TBP18SA030N
1663:
2066:Computer-related introductions in 1956
2048:
1642:erasable programmable read-only memory
1730:Whitaker, Jerry C. (3 October 2018).
1526:. The key difference from a standard
1032:Vision Electronic Recording Apparatus
2042:- shows die of a 256x4 MMI 5300 PROM
1684:V for a 2 nm thick oxide, or 30
1808:from the original on 27 April 2018.
1777:from the original on 27 April 2018.
13:
193:Data validation and reconciliation
14:
2082:
2033:
1927:1977 Intel Memory Design Handbook
1757:Han-Way Huang (5 December 2008).
1574:The PROM was invented in 1956 by
243:Distributed file system for cloud
1763:. Cengage Learning. p. 22.
1760:Embedded System Design with C805
91:Areal density (computer storage)
1920:
910:Programmable metallization cell
1884:
1864:
1855:
1843:
1812:
1723:
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473:Persistence (computer science)
1:
2016:
1881:split channel antifuse device
1716:
1508:programmable read-only memory
1341:Electronic quantum holography
1612:One time programmable memory
692:Video RAM (dual-ported DRAM)
488:Non-RAID drive architectures
7:
1891:Wlodek Kurjanowicz (2008).
1704:
10:
2087:
1569:
1281:Holographic Versatile Disc
1180:Compact Disc Digital Audio
1052:Magnetic-tape data storage
671:Content-addressable memory
1794:. Springer. p. 136.
478:Persistent data structure
373:Digital rights management
1733:The Electronics Handbook
1353:DNA digital data storage
1336:Holographic data storage
825:Solid-state hybrid drive
111:Network-attached storage
1592:United States Air Force
1348:5D optical data storage
1165:3D optical data storage
888:Universal Flash Storage
293:Replication (computing)
238:Distributed file system
128:Single-instance storage
106:Direct-attached storage
86:Continuous availability
1669:
1221:Nintendo optical discs
438:Storage virtualization
308:Information repository
248:Distributed data store
1933:Intel PROM datasheets
1667:
1604:Strategic Air Command
724:Mellon optical memory
712:Williams–Kilburn tube
428:Locality of reference
233:Clustered file system
59:Memory access pattern
2006:CHOI et al. (2008).
1935:- intel-vintage.info
1850:Chip Planning Portal
1606:(SAC) headquarters.
1582:Arma Corporation in
1420:Magnetic-core memory
1067:Digital Data Storage
1027:Quadruplex videotape
468:In-memory processing
358:Information transfer
253:Distributed database
116:Storage area network
96:Block (data storage)
2071:American inventions
2056:Non-volatile memory
1618:non-volatile memory
1544:video game consoles
1017:Phonograph cylinder
955:Electrochemical RAM
807:Solid-state storage
423:Memory segmentation
121:Block-level storage
1996:2015-09-04 at the
1979:2015-09-04 at the
1962:2015-09-04 at the
1945:2015-10-16 at the
1877:2015-09-04 at the
1836:2018-04-27 at the
1825:2018-04-27 at the
1670:
1556:bipolar transistor
1426:Plated-wire memory
1391:Paper data storage
1037:Magnetic recording
463:In-memory database
448:Memory-mapped file
393:Volume boot record
388:Master boot record
378:Volume (computing)
353:Data communication
278:Data deduplication
1872:US Patent 7402855
1831:US Patent 4151021
1820:US Patent 4184207
1801:978-3-642-36318-4
1770:978-1-111-81079-5
1743:978-1-4200-3666-4
1630:Texas Instruments
1558:, connected to a
1501:
1500:
1098:8 mm video format
1022:Phonograph record
841:Flash Core Module
819:Solid-state drive
718:Delay-line memory
677:Computational RAM
580:Scratchpad memory
418:Disk partitioning
143:Unstructured data
69:Secondary storage
2078:
1991:US Patent Office
1974:US Patent Office
1957:US Patent Office
1940:US Patent Office
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1898:. Archived from
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1632:developed a MOS
1540:microcontrollers
1516:read-only memory
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1486:
1479:
1438:Thin-film memory
1432:Core rope memory
1358:Universal memory
1321:Millipede memory
1311:Racetrack memory
1276:Ultra HD Blu-ray
1088:Linear Tape-Open
1042:Magnetic storage
1010:Analog recording
453:Software entropy
413:Disk aggregation
173:Data degradation
158:Data compression
54:Memory hierarchy
44:Memory coherence
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687:Dual-ported RAM
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508:Cloud computing
368:Copy protection
288:Data redundancy
218:Shared resource
188:Data validation
163:Data corruption
138:Structured data
49:Cache coherence
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20:Computer memory
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1929:- archive.org
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1736:. CRC Press.
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1456:Bubble memory
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1083:Cassette tape
1081:
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1078:Videocassette
1076:
1074:
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1068:
1065:
1063:
1060:
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1047:Magnetic tape
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802:ROM cartridge
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531:
529:
528:Dew computing
526:
524:
521:
519:
518:Fog computing
516:
514:
513:Cloud storage
511:
509:
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493:Memory paging
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328:File deletion
326:
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318:Computer file
316:
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198:Data recovery
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183:Data security
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79:floating-gate
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18:
17:
1907:. Retrieved
1900:the original
1886:
1866:
1857:
1845:
1814:
1790:
1783:
1759:
1752:
1732:
1725:
1701:ÎĽs or less.
1679:
1671:
1646:
1639:
1626:
1615:
1608:
1599:
1573:
1535:
1533:
1511:
1507:
1505:
1403:Punched tape
1397:Punched card
1363:Time crystal
1231:Hyper CD-ROM
1170:Optical disc
1062:Tape library
997:FeFET memory
978:Early-stage
858:CompactFlash
853:Memory Stick
813:Flash memory
784:
775:Diode matrix
759:Non-volatile
543:Kryder's law
533:Amdahl's law
458:Software rot
433:Logical disk
333:File copying
268:Data storage
223:File sharing
208:Data cluster
24:data storage
1660:Programming
1654:polysilicon
1584:Garden City
1462:Floppy disk
1414:Drum memory
848:Memory card
815:is used in:
749:(2002–2010)
714:(1946–1947)
538:Moore's law
383:Boot sector
323:Object file
228:File system
39:Memory cell
2050:Categories
1921:References
1909:2009-09-04
1717:References
1634:gate oxide
1385:Historical
1057:Tape drive
883:SmartMedia
706:Historical
403:Disk image
398:Disk array
273:Data store
74:MOS memory
64:Memory map
1711:Intel HEX
1562:called a
1524:microcode
1444:Disk pack
1409:Plugboard
1246:DVD-Video
1175:LaserDisc
1073:Videotape
944:3D XPoint
935:Memristor
575:CPU cache
343:Core dump
263:Data bank
213:Directory
2017:See also
1994:Archived
1977:Archived
1960:Archived
1943:Archived
1875:Archived
1834:Archived
1823:Archived
1806:Archived
1775:Archived
1705:See also
1588:New York
1564:polyfuse
1520:firmware
1373:UltraRAM
1251:DVD card
1206:Video CD
1191:CD Video
961:Nano-RAM
930:Memistor
903:XQD card
878:SIM card
736:Dekatron
622:XDR DRAM
617:EDO DRAM
554:Volatile
348:Hex dump
258:Database
153:Metadata
148:Big data
1570:History
1458:(~1970)
1452:(~1968)
1434:(1960s)
1271:Blu-ray
1261:MiniDVD
1256:DVD-RAM
1216:Mini CD
1158:Optical
1118:U-matic
1113:MicroMV
1093:Betamax
957:(ECRAM)
898:MicroP2
873:SD card
863:PC Card
654:1T-SRAM
612:QDRSRAM
203:Storage
33:General
2028:EEPROM
2002:Google
1985:Google
1968:Google
1951:Google
1798:
1767:
1740:
1699:
1695:
1693:ÎĽA/100
1691:
1686:
1682:
1656:gate.
1464:(1971)
1446:(1962)
1440:(1962)
1428:(1957)
1422:(1949)
1416:(1932)
1405:(1725)
1399:(1725)
1393:(1725)
1266:HD DVD
1226:CD-ROM
1182:(CDDA)
1108:MiniDV
827:(SSHD)
809:(SSS)
795:EEPROM
743:(2009)
732:(1952)
726:(1951)
720:(1947)
338:Backup
2023:EPROM
1903:(PDF)
1896:(PDF)
1622:eFuse
1580:Bosch
1326:ECRAM
1306:CBRAM
1241:DVD+R
1201:CD-RW
1138:D-VHS
1133:VHS-C
1128:S-VHS
1069:(DDS)
992:ReRAM
987:FeRAM
980:NVRAM
966:CBRAM
923:NVRAM
821:(SSD)
790:EPROM
747:Z-RAM
741:T-RAM
673:(CAM)
661:ReRAM
627:RDRAM
607:LPDDR
602:SGRAM
597:SDRAM
592:eDRAM
26:types
1870:See
1818:See
1796:ISBN
1765:ISBN
1738:ISBN
1675:6502
1649:CMOS
1600:burn
1596:ICBM
1560:fuse
1552:HDMI
1548:RFID
1512:PROM
1316:NRAM
1288:WORM
1196:CD-R
950:MRAM
785:PROM
780:MROM
682:VRAM
666:QRAM
649:SRAM
637:GDDR
587:DRAM
483:RAID
133:Data
22:and
2000:or
1983:or
1966:or
1949:or
1542:,
1528:ROM
1522:or
1236:DVD
1123:VHS
940:PCM
893:SxS
768:ROM
642:HBM
632:DDR
563:RAM
2052::
1804:.
1773:.
1586:,
1506:A
1186:CD
1103:DV
1912:.
1746:.
1510:(
1492:e
1485:t
1478:v
946:)
942:(
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