714:
2142:
junction and be swept into the collector; perhaps one-hundredth of the electrons will recombine in the base, which is the dominant mechanism in the base current. As well, as the base is lightly doped (in comparison to the emitter and collector regions), recombination rates are low, permitting more carriers to diffuse across the base region. By controlling the number of electrons that can leave the base, the number of electrons entering the collector can be controlled. Collector current is approximately ÎČ (common-emitter current gain) times the base current. It is typically greater than 100 for small-signal transistors but can be smaller in transistors designed for high-power applications.
1097:). This requires sufficient base drive current. As the transistor provides current gain, it facilitates the switching of a relatively large current in the collector by a much smaller current into the base terminal. The ratio of these currents varies depending on the type of transistor, and even for a particular type, varies depending on the collector current. In the example of a light-switch circuit, as shown, the resistor is chosen to provide enough base current to ensure the transistor is saturated. The base resistor value is calculated from the supply voltage, transistor C-E junction voltage drop, collector current, and amplification factor beta.
959:
367:
229:
501:. With this knowledge, he began researching the phenomenon of "interference" in 1947. By June 1948, witnessing currents flowing through point-contacts, he produced consistent results using samples of germanium produced by Welker, similar to what Bardeen and Brattain had accomplished earlier in December 1947. Realizing that Bell Labs' scientists had already invented the transistor, the company rushed to get its "transistron" into production for amplified use in France's telephone network, filing his first transistor patent application on August 13, 1948.
1508:
1482:
2243:
1836:
313:
2493:
2183:
344:
40:
1515:
1489:
1475:
1432:
1410:
1501:
1106:
1047:
356:
3793:
3348:
1298:
67:
1422:
1400:
3667:
1462:
2109:. The bipolar junction transistor, the first type of transistor to be mass-produced, is a combination of two junction diodes and is formed of either a thin layer of p-type semiconductor sandwiched between two n-type semiconductors (an nâpân transistor), or a thin layer of n-type semiconductor sandwiched between two p-type semiconductors (a pânâp transistor). This construction produces two
2049:
polarity) can "deplete" the channel, reducing conduction. For either mode, a more positive gate voltage corresponds to a higher current for n-channel devices and a lower current for p-channel devices. Nearly all JFETs are depletion-mode because the diode junctions would forward bias and conduct if they were enhancement-mode devices, while most IGFETs are enhancement-mode types.
3675:
2675:, when in 2012, NASA and the National Nanofab Center in South Korea were reported to have built a prototype vacuum-channel transistor in only 150 nanometers in size, can be manufactured cheaply using standard silicon semiconductor processing, can operate at high speeds even in hostile environments, and could consume just as much power as a standard transistor.
3552:
diodes). The lower the junction forward voltage the better, as this means that less power is required to "drive" the transistor. The junction forward voltage for a given current decreases with an increase in temperature. For a typical silicon junction, the change is â2.1 mV/°C. In some circuits special compensating elements (
3619:(junction between different semiconductor materials) of aluminium gallium arsenide (AlGaAs)-gallium arsenide (GaAs) which has twice the electron mobility of a GaAs-metal barrier junction. Because of their high speed and low noise, HEMTs are used in satellite receivers working at frequencies around 12 GHz. HEMTs based on
2234:, the desirable properties of MOSFETs allowed them to capture nearly all market share for digital circuits in the 1970s. Discrete MOSFETs (typically power MOSFETs) can be applied in transistor applications, including analog circuits, voltage regulators, amplifiers, power transmitters, and motor drivers.
3559:
The density of mobile carriers in the channel of a MOSFET is a function of the electric field forming the channel and of various other phenomena such as the impurity level in the channel. Some impurities, called dopants, are introduced deliberately in making a MOSFET, to control the MOSFET electrical
2141:
recombine at the junction), and the base-collector junction is reverse-biased (electrons and holes are formed at, and move away from, the junction), and electrons are injected into the base region. Because the base is narrow, most of these electrons will diffuse into the reverse-biased base-collector
1030:
The top image in this section represents a typical bipolar transistor in a circuit. A charge flows between emitter and collector terminals depending on the current in the base. Because the base and emitter connections behave like a semiconductor diode, a voltage drop develops between them. The amount
1077:
In a switching circuit, the goal is to simulate, as near as possible, the ideal switch having the properties of an open circuit when off, the short circuit when on, and an instantaneous transition between the two states. Parameters are chosen such that the "off" output is limited to leakage currents
725:
and
Lincoln Derick accidentally grew a layer of silicon dioxide over the silicon wafer, for which they observed surface passivation effects. By 1957 Frosch and Derick, using masking and predeposition, were able to manufacture silicon dioxide field effect transistors; the first planar transistors, in
744:
proposed a silicon MOS transistor in 1959 and successfully demonstrated a working MOS device with their Bell Labs team in 1960. Their team included E. E. LaBate and E. I. Povilonis who fabricated the device; M. O. Thurston, L. A. DâAsaro, and J. R. Ligenza who developed the diffusion processes, and
726:
which drain and source were adjacent at the same surface. They showed that silicon dioxide insulated, protected silicon wafers and prevented dopants from diffusing into the wafer. After this, J.R. Ligenza and W.G. Spitzer studied the mechanism of thermally grown oxides, fabricated a high quality Si/
121:
applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Some transistors are packaged individually, but many more in miniature
2174:
Bipolar transistors can be made to conduct by exposure to light because the absorption of photons in the base region generates a photocurrent that acts as a base current; the collector current is approximately ÎČ times the photocurrent. Devices designed for this purpose have a transparent window in
424:
and Vicki Daitch, Shockley proposed that Bell Labs' first patent for a transistor should be based on the field-effect and that he be named as the inventor. Having unearthed
Lilienfeld's patents that went into obscurity years earlier, lawyers at Bell Labs advised against Shockley's proposal because
3745:
Nowadays most transistors come in a wide range of SMT packages. In comparison, the list of available through-hole packages is relatively small. Here is a short list of the most common through-hole transistors packages in alphabetical order: ATV, E-line, MRT, HRT, SC-43, SC-72, TO-3, TO-18, TO-39,
3551:
is the voltage applied to the emitter-base junction of a BJT to make the base conduct a specified current. The current increases exponentially as the junction forward voltage is increased. The values given in the table are typical for a current of 1 mA (the same values apply to semiconductor
3741:
Often a given transistor type is available in several packages. Transistor packages are mainly standardized, but the assignment of a transistor's functions to the terminals is not: other transistor types can assign other functions to the package's terminals. Even for the same transistor type the
2921:
when it merged with EECA in 1983. This scheme begins with two letters: the first gives the semiconductor type (A for germanium, B for silicon, and C for materials like GaAs); the second letter denotes the intended use (A for diode, C for general-purpose transistor, etc.). A three-digit sequence
572:
of Dallas, Texas, the TR-1 was manufactured in
Indianapolis, Indiana. It was a near pocket-sized radio with four transistors and one germanium diode. The industrial design was outsourced to the Chicago firm of Painter, Teague and Petertil. It was initially released in one of six colours: black,
1081:
In a grounded-emitter transistor circuit, such as the light-switch circuit shown, as the base voltage rises, the emitter and collector currents rise exponentially. The collector voltage drops because of reduced resistance from the collector to the emitter. If the voltage difference between the
3579:
of 1 volt per meter applied across the material. In general, the higher the electron mobility the faster the transistor can operate. The table indicates that Ge is a better material than Si in this respect. However, Ge has four major shortcomings compared to silicon and gallium arsenide:
3304:
Manufacturers buying large numbers of similar parts may have them supplied with "house numbers", identifying a particular purchasing specification and not necessarily a device with a standardized registered number. For example, an HP part 1854,0053 is a (JEDEC) 2N2218 transistor which is also
2214:(BJT) was previously the most commonly used transistor during the 1950s to 1960s. Even after MOSFETs became widely available in the 1970s, the BJT remained the transistor of choice for many analog circuits such as amplifiers because of their greater linearity, up until MOSFET devices (such as
2048:
types, depending on whether the channel is turned on or off with zero gate-to-source voltage. For enhancement mode, the channel is off at zero bias, and a gate potential can "enhance" the conduction. For the depletion mode, the channel is on at zero bias, and a gate potential (of the opposite
1755:
Working temperature: Extreme temperature transistors and traditional temperature transistors (â55 to 150 °C (â67 to 302 °F)). Extreme temperature transistors include high-temperature transistors (above 150 °C (302 °F)) and low-temperature transistors (below â55 °C
1911:
region. The conductivity is varied by the electric field that is produced when a voltage is applied between the gate and source terminals, hence the current flowing between the drain and source is controlled by the voltage applied between the gate and source. As the gateâsource voltage
6251:
3333:
arrangements and options for dual or matched nâpân + pânâp devices in one pack. So even when the original device (such as a 2N3904) may have been assigned by a standards authority, and well known by engineers over the years, the new versions are far from standardized in their naming.
591:
TR-63, released in 1957, was the first mass-produced transistor radio, leading to the widespread adoption of transistor radios. Seven million TR-63s were sold worldwide by the mid-1960s. Sony's success with transistor radios led to transistors replacing vacuum tubes as the dominant
1756:(â67 °F)). The high-temperature transistors that operate thermally stable up to 250 °C (482 °F) can be developed by a general strategy of blending interpenetrating semi-crystalline conjugated polymers and high glass-transition temperature insulating polymers.
285:
replacement for the triode. He filed identical patents in the United States in 1926 and 1928. However, he did not publish any research articles about his devices nor did his patents cite any specific examples of a working prototype. Because the production of high-quality
2517:(IGBTs) use a medium-power IGFET, similarly connected to a power BJT, to give a high input impedance. Power diodes are often connected between certain terminals depending on specific use. IGBTs are particularly suitable for heavy-duty industrial applications. The
5287:
1857:
curve. At first, when no gate voltage is applied, there are no inversion electrons in the channel, so the device is turned off. As gate voltage increases, the inversion electron density in the channel increases, the current increases, and the device turns
542:
AT&T first used transistors in telecommunications equipment in the No. 4A Toll
Crossbar Switching System in 1953, for selecting trunk circuits from routing information encoded on translator cards. Its predecessor, the Western Electric No. 3A
3543:
Rough parameters for the most common semiconductor materials used to make transistors are given in the adjacent table. These parameters will vary with an increase in temperature, electric field, impurity level, strain, and sundry other factors.
2113:: a base-emitter junction and a base-collector junction, separated by a thin region of semiconductor known as the base region. (Two junction diodes wired together without sharing an intervening semiconducting region will not make a transistor.)
2037:. These, and the HEMTs (high-electron-mobility transistors, or HFETs), in which a two-dimensional electron gas with very high carrier mobility is used for charge transport, are especially suitable for use at very high frequencies (several GHz).
671:
In 1948, Bardeen and
Brattain patented the progenitor of MOSFET at Bell Labs, an insulated-gate FET (IGFET) with an inversion layer. Bardeen's patent, and the concept of an inversion layer, forms the basis of CMOS and DRAM technology today.
2744:
are four-terminal devices, and begin with 3N. The prefix is followed by a two-, three- or four-digit number with no significance as to device properties, although early devices with low numbers tend to be germanium devices. For example,
3726:) is the latest surface-mount package. It has solder "balls" on the underside in place of leads. Because they are smaller and have shorter interconnections, SMDs have better high-frequency characteristics but lower power ratings.
6711:
2500:
with the upper case removed so the transistor chip (the small square) can be seen. It is effectively two transistors on the same chip. One is much larger than the other, but both are large in comparison to transistors in
7379:
Sun, Dong-Ming; Timmermans, Marina Y.; Tian, Ying; Nasibulin, Albert G.; Kauppinen, Esko I.; Kishimoto, Shigeru; Mizutani, Takashi; Ohno, Yutaka (2011). "Flexible high-performance carbon nanotube integrated circuits".
1078:
too small to affect connected circuitry, the resistance of the transistor in the "on" state is too small to affect circuitry, and the transition between the two states is fast enough not to have a detrimental effect.
3313:
With so many independent naming schemes, and the abbreviation of part numbers when printed on the devices, ambiguity sometimes occurs. For example, two different devices may be marked "J176" (one the J176 low-power
1164:. The first discrete-transistor audio amplifiers barely supplied a few hundred milliwatts, but power and audio fidelity gradually increased as better transistors became available and amplifier architecture evolved.
4493:
882:), from relatively basic materials, allows astonishingly low per-transistor costs. MOSFETs are the most numerously produced artificial objects in history, with more than 13 sextillion manufactured by 2018.
473:
3729:
Transistor packages are made of glass, metal, ceramic, or plastic. The package often dictates the power rating and frequency characteristics. Power transistors have larger packages that can be clamped to
2132:
because the currents at the emitter and collector are controllable by a relatively small base current. In an nâpân transistor operating in the active region, the emitter-base junction is forward-biased
2525:, intended for three-phase power supplies, houses three nâpân IGBTs in a case measuring 38 by 140 by 190 mm and weighing 1.5 kg. Each IGBT is rated at 1,700 volts and can handle 2,400 amperes
6006:
1215:
Circuits with greater energy efficiency are usually possible. For low-power applications (for example, voltage amplification) in particular, energy consumption can be very much less than for tubes.
206:, transistors are generally smaller and require less power to operate. Certain vacuum tubes have advantages over transistors at very high operating frequencies or high operating voltages, such as
584:. Chrysler made the Mopar model 914HR available as an option starting in fall 1955 for its new line of 1956 Chrysler and Imperial cars, which reached dealership showrooms on October 21, 1955.
2749:
is a silicon nâpân power transistor, 2N1301 is a pânâp germanium switching transistor. A letter suffix, such as "A", is sometimes used to indicate a newer variant, but rarely gain groupings.
862:. It has been considered the most important transistor, possibly the most important invention in electronics, and the device that enabled modern electronics. It has been the basis of modern
436:
Shockley's team initially attempted to build a field-effect transistor (FET) by trying to modulate the conductivity of a semiconductor, but was unsuccessful, mainly due to problems with the
290:
materials was still decades away, Lilienfeld's solid-state amplifier ideas would not have found practical use in the 1920s and 1930s, even if such a device had been built. In 1934, inventor
2534:
3753:
module of the 1960s is one example of such a hybrid circuit module using glass passivated transistor (and diode) die. Other packaging techniques for discrete transistors as chips include
6503:
Gumyusenge, Aristide; Tran, Dung T.; Luo, Xuyi; Pitch, Gregory M.; Zhao, Yan; Jenkins, Kaelon A.; Dunn, Tim J.; Ayzner, Alexander L.; Savoie, Brett M.; Mei, Jianguo (December 7, 2018).
4221:
516:
successfully produced a working bipolar NPN junction amplifying germanium transistor. Bell announced the discovery of this new "sandwich" transistor in a press release on July 4, 1951.
3609:. GaAs has the highest electron mobility of the three semiconductors. It is for this reason that GaAs is used in high-frequency applications. A relatively recent FET development, the
2922:
number (or one letter and two digits, for industrial types) follows. With early devices this indicated the case type. Suffixes may be used, with a letter (e.g. "C" often means high
2083:, whose voltage determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic
1093:
The use of bipolar transistors for switching applications requires biasing the transistor so that it operates between its cut-off region in the off-state and the saturation region (
6622:
6718:
2322:
MBCFET, a variant of GAAFET that uses horizontal nanosheets instead of nanowires, made by
Samsung. Also known as RibbonFET (made by Intel) and as horizontal nanosheet transistor.
2442:
3949:
3734:
for enhanced cooling. Additionally, most power transistors have the collector or drain physically connected to the metal enclosure. At the other extreme, some surface-mount
4529:
425:
the idea of a field-effect transistor that used an electric field as a "grid" was not new. Instead, what
Bardeen, Brattain, and Shockley invented in 1947 was the first
6131:
Thompson, S. E.; Chau, R. S.; Ghani, T.; Mistry, K.; Tyagi, S.; Bohr, M. T. (2005). "In search of "Forever," continued transistor scaling one new material at a time".
4658:
2554:
1082:
collector and emitter were zero (or near zero), the collector current would be limited only by the load resistance (light bulb) and the supply voltage. This is called
4603: H. F. Mataré / H. Welker / Westinghouse: "Nouveau sytÚme crystallin à plusieur électrodes réalisant des relais de effects électroniques" filed on August 13, 1948
3648:
reverse
Schottky diode formed between the source and drain as part of the fabrication process. This diode can be a nuisance, but sometimes it is used in the circuit.
4794:
2271:
168:
70:
3920:
3290:) now is an unreliable indicator of who made the device. Some proprietary naming schemes adopt parts of other naming schemes, for example, a PN2222A is a (possibly
171:(MOSFET), the MOSFET was invented at Bell Labs between 1955 and 1960. Transistors revolutionized the field of electronics and paved the way for smaller and cheaper
1195:
No cathode heater (which produces the characteristic orange glow of tubes), reducing power consumption, eliminating delay as tube heaters warm up, and immune from
4622: H. F. Mataré / H. Welker / Westinghouse, "Crystal device for controlling electric currents by means of a solid semiconductor" French priority August 13, 1948
1124:) changes the small current through the base of the transistor whose current amplification combined with the properties of the circuit means that small swings in
2593:, which can be used as a simple pulse generator. It comprises the main body of either p-type or n-type semiconductor with ohmic contacts at each end (terminals
1003:. A small current at the base terminal, flowing between the base and the emitter, can control or switch a much larger current between the collector and emitter.
4903:
5890:
Sekigawa, Toshihiro; Hayashi, Yutaka (August 1, 1984). "Calculated threshold-voltage characteristics of an XMOS transistor having an additional bottom gate".
966:
A transistor can use a small signal applied between one pair of its terminals to control a much larger signal at another pair of terminals, a property called
5012:
2720:
Three major identification standards are used for designating transistor devices. In each, the alphanumeric prefix provides clues to the type of the device.
2565:. Effectively, it is a very large number of transistors in parallel where, at the output, the signal is added constructively, but random noise is added only
1221:
Very low sensitivity to mechanical shock and vibration, providing physical ruggedness and virtually eliminating shock-induced spurious signals (for example,
7615:
5605:
5998:
2416:
2611:(SET), consist of a gate island between two tunneling junctions. The tunneling current is controlled by a voltage applied to the gate through a capacitor.
1815:
roudly". However, this does not apply to MOSFET-based transistor symbols as the arrow is typically reversed (i.e. the arrow for the n-p-n points inside).
6072:
4343:, Patent No. GB439457, European Patent Office, filed in Great Britain 1934-03-02, published December 6, 1935 (originally filed in Germany March 2, 1934).
3634:
values represent a cross-section taken from various manufacturers' datasheets. This temperature should not be exceeded or the transistor may be damaged.
2002:), reflecting its original construction from layers of metal (the gate), oxide (the insulation), and semiconductor. Unlike IGFETs, the JFET gate forms a
2669:(JNT), uses a simple nanowire of silicon surrounded by an electrically isolated "wedding ring" that acts to gate the flow of electrons through the wire.
1245:
afforded by the vacuum of vacuum tubes, which is desirable for high-power, high-frequency operation – such as that used in some over-the-air
7129:
4636:
6862:
6752:
6289:
5943:
4617:
4598:
2006:
with the channel which lies between the source and drains. Functionally, this makes the n-channel JFET the solid-state equivalent of the vacuum tube
931:, as of 2022, may contain as many as 57 billion MOSFETs. Transistors are often organized into logic gates in microprocessors to perform computation.
5969:
568:, released in October 1954. Produced as a joint venture between the Regency Division of Industrial Development Engineering Associates, I.D.E.A. and
7469:
6133:
4872:
9271:
7756:
3329:
packaged counterparts, they tend to be assigned many different part numbers because manufacturers have their systems to cope with the variety in
2929:, such as in: BC549C) or other codes may follow to show gain (e.g. BC327-25) or voltage rating (e.g. BUK854-800A). The more common prefixes are:
2385:
6276:
2319:
GAAFET, Similar to FinFET but nanowires are used instead of fins, the nanowires are stacked vertically and are surrounded on 4 sides by the gate
2067:, MOS-FET, or MOS FET), also known as the metalâoxideâsilicon transistor (MOS transistor, or MOS), is a type of field-effect transistor that is
7100:
5285:, Lincoln, Derick & Frosch, Carl J., "Oxidation of semiconductive surfaces for controlled diffusion", issued 1957-08-13
3298:
6759:. 38th IAS annual Meeting on Conference Record of the Industry Applications Conference. Vol. 3 of 3. Salt Lake City. pp. 1810â1817.
6167:
In the field of electronics, the planar Si metalâoxideâsemiconductor field-effect transistor (MOSFET) is perhaps the most important invention.
8806:
4961:
3294:) 2N2222A in a plastic case (but a PN108 is a plastic version of a BC108, not a 2N108, while the PN100 is unrelated to other xx100 devices).
2452:
1070:. Important parameters for this application include the current switched, the voltage handled, and the switching speed, characterized by the
3979:
5933:
6888:
1141:
Various configurations of single transistor amplifiers are possible, with some providing current gain, some voltage gain, and some both.
508:
were invented by Bell Labs' William
Shockley, who applied for patent (2,569,347) on June 26, 1948. On April 12, 1950, Bell Labs chemists
4430:
4357:
1218:
Complementary devices available, providing design flexibility including complementary-symmetry circuits, not possible with vacuum tubes.
9038:
5513:
6467:
8630:
6077:
5796:
4682:
3941:
9076:
7699:
7158:
6179:
Kubozono, Yoshihiro; He, Xuexia; Hamao, Shino; Uesugi, Eri; Shimo, Yuma; Mikami, Takahiro; Goto, Hidenori; Kambe, Takashi (2015).
8978:
8271:
2366:
1900:). On most FETs, the body is connected to the source inside the package, and this will be assumed for the following description.
7035:
4323:
4240:
3235:
9081:
2699:
2511:
are two BJTs connected together to provide a high current gain equal to the product of the current gains of the two transistors
1665:
frequency (the maximum effective frequency of a transistor in a common-emitter or common-source circuit is denoted by the term
7542:
7525:
7505:
7486:
7226:
6972:
6665:
6603:
6578:
6425:
6392:
6352:
6325:
5588:
5563:
5475:
5137:
5100:
4650:
4395:
4194:
4117:
4092:
2601:). A junction with the opposite semiconductor type is formed at a point along the length of the body for the third terminal (
2436:
2428:
2379:
2258:
1256:
Transistors and other solid-state devices are susceptible to damage from very brief electrical and thermal events, including
559:
2145:
Unlike the field-effect transistor (see below), the BJT is a low-input-impedance device. Also, as the base-emitter voltage (
8913:
8188:
5836:
4782:
4169:
749:, much lower power consumption, and higher density than bipolar junction transistors, the MOSFET made it possible to build
452:
compound materials. Trying to understand the mysterious reasons behind this failure led them instead to invent the bipolar
194:, but certain other semiconductor materials are sometimes used. A transistor may have only one kind of charge carrier in a
7068:
4846:
7969:
7749:
6623:"13 Sextillion & Counting: The Long & Winding Road to the Most Frequently Manufactured Human Artifact in History"
4340:
2672:
1362:
691:(FETs) were theorized as potential alternatives, but researchers could not get them to work properly, largely due to the
641:
in 1926, and for an insulated-gate field-effect transistor in 1928. The FET concept was later also theorized by engineer
7332:
Zhang, Kan; Seo, Jung-Hun; Zhou, Weidong; Ma, Zhenqiang (2012). "Fast flexible electronics using transferrable [
9026:
8925:
7453:
6831:
5444:
5419:
4944:
2678:
2410:
2307:
1334:
7668:
4704:
Bradley, W.E. (December 1953). "The
Surface-Barrier Transistor: Part I-Principles of the Surface-Barrier Transistor".
77:(G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (white).
8960:
8799:
7952:
7848:
7579:
7256:
6441:
6196:
6115:
5874:
5193:
5063:
5042:
4578:
4515:
4204:
4177:
3611:
3387:
2642:
2514:
2475:
2391:
1559:
1381:
970:. It can produce a stronger output signal, a voltage or current, proportional to a weaker input signal, acting as an
7187:
6782:
4911:
9256:
8092:
7819:
4893:
Wall Street Journal, "Chrysler Promises Car Radio With Transistors Instead of Tubes in '56", April 28, 1955, page 1
2917:
The European Electronic Component Manufacturers Association (EECA) uses a numbering scheme that was inherited from
2666:
2068:
2034:
1677:
879:
5020:
1341:
143:(FET) in 1926, but it was not possible to construct a working device at that time. The first working device was a
8972:
8908:
8140:
7939:
7623:
7263:
A hybrid circuit is defined as an assembly containing both active semiconductor devices (packaged and unpackaged)
6681:
6047:
5644:
3770:
3742:
terminal assignment can vary (normally indicated by a suffix letter to the part number, q.e. BC212L and BC212K).
2548:
2422:
2084:
3601:
Because the electron mobility is higher than the hole mobility for all semiconductor materials, a given bipolar
9286:
9276:
7742:
6818:
6488:
6382:
6342:
5467:
3369:
2574:
1319:
871:
17:
7662:
4341:
Heil, Oskar, "Improvements in or relating to electrical amplifiers and other control arrangements and devices"
2022:, they both have a high input impedance, and they both conduct current under the control of an input voltage.
9281:
9098:
8966:
6315:
3847:
3521:(Si) types currently predominate but certain advanced microwave and high-performance versions now employ the
2800:
1976:
1183:(or in the UK "thermionic valves" or just "valves") were the main active components in electronic equipment.
713:
7680:
4651:"1951: First Grown-Junction Transistors Fabricated | The Silicon Engine | Computer History Museum"
2541:
topology. It was introduced by STMicroelectronics in the 2000s, and abandoned a few years later around 2012.
2537:(ESBT) is a monolithic configuration of a high-voltage bipolar transistor and a low-voltage power MOSFET in
1348:
874:
calls it a "groundbreaking invention that transformed life and culture around the world". Its ability to be
9261:
8792:
8171:
7923:
7704:
7246:
7125:
4632:
3867:
3822:
3627:(AlGaN/GaN HEMTs) provide still higher electron mobility and are being developed for various applications.
3575:
columns show the average speed that electrons and holes diffuse through the semiconductor material with an
660:. Following Shockley's theoretical treatment on JFET in 1952, a working practical JFET was made in 1953 by
478:
6858:
5117:
1086:
because the current is flowing from collector to emitter freely. When saturated, the switch is said to be
9251:
9215:
9110:
7975:
7912:
5411:
5008:
3842:
3837:
3365:
2807:, e.g., 2SD965, but sometimes the "2S" prefix is not marked on the packageâa 2SD965 might only be marked
2544:
2469:
2313:
2211:
2100:
1781:
1551:
1315:
805:
505:
336:
307:
199:
44:
31:
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6107:
5938:
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4868:
4499:
2608:
1330:
1063:
520:
398:, a signal was produced with the output power greater than the input. Solid State Physics Group leader
266:
7728:
7674:
5661:
4613:
4594:
2160:
1968:" region above threshold. A quadratic behavior is not observed in modern devices, for example, at the
9031:
9016:
8942:
8902:
8389:
8103:
7946:
7831:
7718:
5692:
855:
223:
7093:
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958:
394:, performed experiments and observed that when two gold point contacts were applied to a crystal of
9043:
8948:
8936:
8398:
8256:
8108:
7964:
7218:
6938:
6757:
A new monolithic emitter-switching bipolar transistor (ESBT) in high-voltage converter applications
3715:
3640:
refers to the high-speed (aluminum-silicon) metalâsemiconductor barrier diode, commonly known as a
3624:
3606:
3602:
3326:
1695:
1114:
531:. They were made by etching depressions into an n-type germanium base from both sides with jets of
453:
426:
348:
332:
303:
144:
7714:
This Month in Physics History: November 17 to December 23, 1947: Invention of the First Transistor
3971:
1191:
The key advantages that have allowed transistors to replace vacuum tubes in most applications are
402:
saw the potential in this, and over the next few months worked to greatly expand the knowledge of
262:. The triode, however, was a fragile device that consumed a substantial amount of power. In 1909,
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8866:
8409:
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2741:
2502:
2265:
1864:
1824:
1691:
1593:
1589:
1308:
1274:
In audio applications, transistors lack the lower-harmonic distortion – the so-called
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836:
773:
750:
688:
630:
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620:
391:
282:
278:
274:
236:
232:
195:
140:
136:
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4741:, December 4, 1953, page 4, Article "Philco Claims Its Transistor Outperforms Others Now In Use"
4134:
3205:
1228:
Not susceptible to breakage of a glass envelope, leakage, outgassing, and other physical damage.
564:
from August 29 to September 6, 1953. The first production-model pocket transistor radio was the
9187:
8984:
8578:
8145:
8010:
7986:
7443:
7013:
6568:
5947:
3807:
2614:
2590:
2331:
2087:. The MOSFET is by far the most common transistor, and the basic building block of most modern
1246:
934:
The transistor's low cost, flexibility and reliability have made it ubiquitous. Transistorized
676:
430:
429:. To acknowledge this accomplishment, Shockley, Bardeen and Brattain jointly received the 1956
214:. Many types of transistors are made to standardized specifications by multiple manufacturers.
164:
110:
106:
6884:
6180:
5403:
5179:
4934:
3689:
Discrete transistors can be individually packaged transistors or unpackaged transistor chips.
3262:
3182:
753:
integrated circuits, allowing the integration of more than 10,000 transistors in a single IC.
9199:
9153:
9021:
8919:
8856:
8647:
8599:
8420:
8236:
8151:
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5864:
5461:
4564:
4426:
4353:
3693:
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756:
Bardeen and Brattain 1948 inversion layer concept, forms the basis of CMOS technology today.
593:
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ivory, mandarin red, cloud grey, mahogany and olive green. Other colours shortly followed.
366:
90:
86:
6798:
ST no longer offers these components, this web page is empty, and datasheets are obsoletes
4672:
2105:
Bipolar transistors are so named because they conduct by using both majority and minority
942:
in controlling appliances and machinery. It is often easier and cheaper to use a standard
8:
9172:
9115:
8954:
8876:
8851:
8815:
8441:
8349:
8241:
8077:
8054:
7558:
7357:
7211:
6505:"Semiconducting polymer blends that exhibit stable charge transport at high temperatures"
5999:"Milestones:Invention of the First Transistor at Bell Telephone Laboratories, Inc., 1947"
3817:
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2247:
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1621:
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4002:
1355:
1109:
An amplifier circuit, a common-emitter configuration with a voltage-divider bias circuit
1062:
which can be either in an "on" or "off" state, both for high-power applications such as
611:, an expert in growing crystals of high purity, who had previously worked at Bell Labs.
599:
The first working silicon transistor was developed at Bell Labs on January 26, 1954, by
9266:
9192:
9177:
9058:
8896:
8861:
8746:
8606:
8314:
8281:
8097:
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7463:
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7361:
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6778:
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5210:
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4537:
4521:
4474:
4041:
3832:
3798:
2636:
2631:
2626:
2557:, used to amplify very-low-level signals in noisy environments such as the pickup of a
2231:
1903:
In a FET, the drain-to-source current flows via a conducting channel that connects the
1206:
1153:
987:
967:
885:
Although several companies each produce over a billion individually packaged (known as
433:"for their researches on semiconductors and their discovery of the transistor effect".
270:
123:
7633:"The Transistor's 20th Anniversary: How Germanium And A Bit of Wire Changed The World"
6073:"Remarks by Director Iancu at the 2019 International Intellectual Property Conference"
5741:
4563:
Puers, Robert; Baldi, Livio; Voorde, Marcel Van de; Nooten, Sebastiaan E. van (2017).
228:
9148:
8741:
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8553:
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7521:
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7314:
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7031:
6814:
6689:
6661:
6599:
6574:
6542:
6534:
6421:
6388:
6348:
6321:
6290:"Introducing M1 Pro and M1 Max: the most powerful chips Apple has ever built - Apple"
6192:
6150:
6111:
6028:
5915:
5911:
5870:
5745:
5628:
5584:
5559:
5471:
5463:
To the Digital Age: Research Labs, Start-up Companies, and the Rise of MOS Technology
5440:
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5264:
5189:
5133:
5096:
5059:
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4940:
4574:
4525:
4511:
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4373:
A History of Engineering and Science in the Bell System, Physical Science (1925â1980)
4327:
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3565:
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1161:
789:
604:
569:
94:
7693:
7603:
6162:
5640:
4725:
4478:
2687:(from solar cell transistor), a two-terminal gate-less self-powered phototransistor.
2587:, formed by diffusing dopants into semiconductor substrate; can be both BJT and FET.
2242:
555:
464:
359:
8881:
8457:
8404:
8231:
7870:
7723:
7591:
7397:
7353:
7304:
7296:
7277:"Can We Build a Truly High Performance Computer Which is Flexible and Transparent?"
6973:"This Diamond Transistor Is Still Raw, But Its Future Looks Bright - IEEE Spectrum"
6760:
6653:
6524:
6142:
5907:
5776:
5737:
5620:
5551:
5376:
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5314:
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3857:
3852:
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3526:
3215:
3193:
2620:
2227:
2168:
2164:
2110:
1749:
1600:
947:
846:
The MOSFET is by far the most widely used transistor, in applications ranging from
813:
646:
600:
551:
486:
421:
399:
320:
156:
118:
8266:
7547:
4262:
Lilienfeld, Julius Edgar, "Method and apparatus for controlling electric current"
3275:
Manufacturers of devices may have their proprietary numbering system, for example
1835:
981:
There are two types of transistors, with slight differences in how they are used:
362:(pictured in 1950) independently invented a point-contact transistor in June 1948.
9071:
9066:
9048:
9011:
9006:
8931:
8891:
8734:
8667:
8520:
8251:
8161:
8005:
7632:
5822:
D. Kahng and S. M. Sze, "A floating gate and its application to memory devices",
5129:
4966:
4750:
Electronics magazine, January 1954, Article "Electroplated Transistors Announced"
4244:
3862:
3723:
3620:
3283:, a manufacturer's prefix (like "MPF" in MPF102, which originally would denote a
3117:
3022:
3002:
2982:
2962:
2912:
2528:
2203:
2176:
2152:) is increased the base-emitter current and hence the collector-emitter current (
2116:
BJTs have three terminals, corresponding to the three layers of semiconductorâan
1734:
1699:
1658:
1604:
1055:
943:
875:
793:
785:
727:
684:
661:
657:
544:
468:
416:
379:
324:
312:
152:
7892:
7537:; 1st Ed; John McWane, Dana Roberts, Malcom Smith; McGraw-Hill; 82 pages; 1975;
1278: – which is characteristic of vacuum tubes, and is preferred by some.
950:
to carry out a control function than to design an equivalent mechanical system.
9001:
8709:
8490:
8480:
8246:
8049:
7595:
7057:
6042:
5624:
5555:
5491:
5282:
4842:
4717:
4084:
3827:
3641:
3616:
3576:
3163:
3106:
2617:, controls the movement of ions through sub-microscopic, water-filled channels.
2492:
2299:
2207:
2106:
2030:
1644:
1640:
1624:
928:
746:
737:
696:
665:
463:
In 1948, the point-contact transistor was independently invented by physicists
437:
411:
172:
98:
6910:
6215:
5077:
5056:
Microprocessor design: a practical guide from design planning to manufacturing
4306:
4292:
4278:
4264:
717:
1957, Diagram of one of the SiO2 transistor devices made by Frosch and Derrick
355:
343:
126:. Because transistors are the key active components in practically all modern
9235:
9182:
9165:
9160:
8771:
8594:
8510:
8329:
8156:
8124:
7648:
7439:
6992:
6952:
6764:
6564:
6560:
6538:
6154:
5919:
5749:
5632:
5543:
5388:
5268:
5181:
Advanced Materials Innovation: Managing Global Technology in the 21st century
4460:
4072:
4026:
3749:
Unpackaged transistor chips (die) may be assembled into hybrid devices. The
3571:
3280:
2558:
2388:(MESFET), similar to JFET with a Schottky junction instead of a pân junction
2138:
2003:
1205:
Large numbers of extremely small transistors can be manufactured as a single
769:
765:
692:
513:
441:
403:
287:
6924:
6835:
6529:
6504:
6314:
Deschamps, Jean-Pierre; Valderrama, Elena; TerĂ©s, LluĂs (October 12, 2016).
6146:
2369:(CNFET, CNTFET), where the channel material is replaced by a carbon nanotube
828:
Because transistors are the key active components in practically all modern
576:
The first production all-transistor car radio was developed by Chrysler and
8652:
8640:
8528:
8495:
8324:
8309:
7876:
7409:
7318:
7275:
Rojas, Jhonathan P.; Torres Sevilla, Galo A.; Hussain, Muhammad M. (2013).
6546:
3678:
3661:
2918:
2732:
part numbering scheme evolved in the 1960s in the United States. The JEDEC
2562:
2350:
2215:
2011:
1969:
1965:
1684:
1651:
1222:
1145:
935:
832:, many people consider them one of the 20th century's greatest inventions.
797:
565:
498:
375:
316:
148:
130:, many people consider them one of the 20th century's greatest inventions.
6742:
3536:(SiGe). Single-element semiconductor material (Ge and Si) is described as
2338:
displays, types include amorphous silicon, LTPS, LTPO and IGZO transistors
1514:
1500:
1488:
1474:
1431:
1409:
962:
A simple circuit diagram showing the labels of an nâpân bipolar transistor
8694:
8436:
8385:
8291:
8276:
8059:
8021:
7401:
7183:
5495:
5033:
Chelikowski, J. (2004) "Introduction: Silicon in all its Forms", p. 1 in
4785:
Der deutsche Erfinder des Transistors â Nachrichten Welt Print â DIE WELT
4469:
3644:. This is included in the table because some silicon power IGFETs have a
2658:
2182:
2088:
1180:
1157:
1031:
of this drop, determined by the transistor's material, is referred to as
867:
851:
829:
801:
792:(silicon-gate) MOS transistor, which Fairchild Semiconductor researchers
741:
722:
608:
509:
251:
203:
127:
102:
39:
7734:
5757:
4326:. Institute of Electrical and Electronics Engineers, Inc. Archived from
3921:"A History of the Invention of the Transistor and Where It Will Lead Us"
1105:
9220:
8886:
8766:
8756:
8689:
8563:
8533:
8500:
8475:
8470:
8447:
8319:
8299:
8177:
8039:
8016:
7804:
7799:
7607:
5260:
4761:
Transistors and Their Circuits in the 4A Toll Crossbar Switching System
4018:
3769:
Researchers have made several kinds of flexible transistors, including
3372: in this section. Unsourced material may be challenged and removed.
2684:
2566:
2478:, up to several hundred GHz, common in modern ultrafast and RF circuits
2283:
2277:
2080:
1573:
1322: in this section. Unsourced material may be challenged and removed.
1275:
1264:
1149:
1067:
1046:
978:, where the amount of current is determined by other circuit elements.
924:
859:
642:
603:. The first production commercial silicon transistor was announced by
291:
244:
176:
74:
8784:
7512:
The invention of the transistor & the birth of the information age
7300:
5781:
5720:
Hittinger, William C. (1973). "Metal-Oxide-Semiconductor Technology".
5583:. Berlin, Heidelberg: Springer-Verlag Berlin Heidelberg. p. 321.
5349:
5334:"Surface Protection and Selective Masking during Diffusion in Silicon"
5318:
5303:"Surface Protection and Selective Masking during Diffusion in Silicon"
5226:
5211:"Surface Protection and Selective Masking during Diffusion in Silicon"
5163:
4223:
Specification of electric current control mechanism patent application
4112:. Berlin, Heidelberg: Springer-Verlag Berlin Heidelberg. p. 321.
4057:
4042:"Surface Protection and Selective Masking during Diffusion in Silicon"
3297:
Military part numbers sometimes are assigned their codes, such as the
2274:(MOSFET), where the gate is insulated by a shallow layer of insulator
816:
MOSFET, originated from the research of Digh Hisamoto and his team at
167:
for their achievement. The most widely used type of transistor is the
8846:
8729:
8573:
8568:
8558:
8485:
8365:
8199:
8194:
8119:
8044:
7152:"TransistorâDiode Cross Reference â H.P. Part Numbers to JEDEC (pdf)"
6188:
4962:"The 7 Step Formula Sony Used to Get Back On Top After a Lost Decade"
4936:
The 100 Most Significant Events in American Business: An Encyclopedia
4268:
January 28, 1930 (filed in Canada 1925-10-22, in US October 8, 1926).
3872:
3731:
3553:
3514:
3246:
3219:
2958:
2446:
2129:
1662:
1577:
1212:
Low operating voltages compatible with batteries of only a few cells.
1071:
1026:
A voltage at the gate can control a current between source and drain.
971:
939:
916:
781:
539:
electroplated into the depressions formed the collector and emitter.
445:
395:
387:
328:
263:
259:
191:
160:
133:
7706:
IEEE Global History Network, The Transistor and Portable Electronics
6484:
6185:
Nanodevices for Photonics and Electronics: Advances and Applications
5075:
Lilienfeld, Julius Edgar, "Device for controlling electric current"
4354:"November 17 â December 23, 1947: Invention of the First Transistor"
3347:
2723:
2382:(JFET), where the gate is insulated by a reverse-biased pân junction
1297:
8841:
8836:
8751:
8699:
8679:
8657:
8543:
8538:
8426:
8415:
8344:
8114:
7438:
3812:
3792:
3284:
2505:
because this particular example is intended for power applications.
2402:(Gallium Oxide), GaAs (Gallium Arsenide) transistors, MOSFETs, etc.
2134:
1773:
912:
847:
745:
H. K. Gummel and R. Lindner who characterized the device. With its
211:
180:
66:
7554:
Transistor Circuit Analysis - Theory and Solutions to 235 Problems
1762:
silicon, surface-mount, BJT, NPN, low-power, high-frequency switch
1050:
BJT used as an electronic switch in grounded-emitter configuration
370:
A Philco surface-barrier transistor developed and produced in 1953
27:
Solid-state electrically operated switch also used as an amplifier
8611:
8548:
8370:
8355:
8209:
8166:
7814:
7616:"Herbert F. Mataré, An Inventor of the Transistor has his moment"
7495:
6859:"Nanofluidic transistor, the basis of future chemical processors"
6220:
5666:
5498:(1960). "Silicon-silicon dioxide field induced surface devices".
4447:
Guarnieri, M. (2017). "Seventy Years of Getting Transistorized".
3750:
3666:
3518:
3073:
2788:
four-terminal device, such as dual-gate field-effect transistors
2646:
2538:
2459:
2295:
2223:
2167:. Because of this exponential relationship, the BJT has a higher
2091:. The MOSFET accounts for 99.9% of all transistors in the world.
2076:
2015:
1680:âthe frequency at which the transistor yields unity voltage gain)
1581:
1421:
1399:
817:
580:
corporations and was announced in the April 28, 1955, edition of
490:
187:
114:
5514:"1960 â Metal Oxide Semiconductor (MOS) Transistor Demonstrated"
2316:(FinFET), source/drain region shapes fins on the silicon surface
1964:
is the threshold voltage at which drain current begins) in the "
891:) MOS transistors every year, the vast majority are produced in
835:
The invention of the first transistor at Bell Labs was named an
8684:
8375:
8339:
8304:
7864:
7836:
7809:
7784:
7709:. All about the history of transistors and integrated circuits.
7556:; 2nd Ed; Alfred Gronner; Simon and Schuster; 244 pages; 1970.
6811:
Low-Noise Wide-Band Amplifiers in Bipolar and CMOS Technologies
5970:"The Breakthrough Advantage for FPGAs with Tri-Gate Technology"
3330:
3319:
3223:
3158:
3147:
3082:
2746:
2373:
2199:
2064:
2058:
2026:
2007:
1999:
1566:
1547:
975:
809:
761:
708:
638:
634:
577:
536:
524:
449:
247:
56:
48:
6457:"Universal system and output transformer for valve amplifiers"
5771:
Howard R. Duff (2001). "John Bardeen and transistor physics".
5687:
5685:
5153:
Howard R. Duff (2001). "John Bardeen and transistor physics".
4869:"Regency manufacturer in USA, radio technology from United St"
2913:
European Electronic Component Manufacturers Association (EECA)
1461:
8761:
8672:
8431:
8204:
7997:
7859:
7854:
7217:(Fifth ed.). New York: Oxford University Press. p.
6939:"Boffins claim to create the world's first wooden transistor"
6925:"Timber! The World's First Wooden Transistor - IEEE Spectrum"
6911:"New Type of Transistor from a GermaniumâTin Alloy Developed"
5976:
4816:
3682:
3276:
3153:
2729:
2356:
2219:
1611:
908:
494:
482:
255:
52:
4566:
Nanoelectronics: Materials, Devices, Applications, 2 Volumes
3942:"1926 â Field Effect Semiconductor Device Concepts Patented"
2210:, accounting for 99.9% of all transistors in the world. The
1469:
1394:
1260:
in handling. Vacuum tubes are electrically much more rugged.
927:
consists of up to about 20 transistors, whereas an advanced
8704:
8087:
8033:
7934:
7887:
7825:
7248:
Integrated Circuit Packaging, Assembly and Interconnections
6997:
6977:
6957:
5797:"1963: Complementary MOS Circuit Configuration is Invented"
5682:
4196:
Concise Encyclopedia of Building and Construction Materials
3315:
2335:
2289:
1987:
1830:
1555:
1168:
757:
653:
588:
60:
7378:
7274:
6181:"Application of Organic Semiconductors toward Transistors"
5365:"The mechanisms for silicon oxidation in steam and oxygen"
4135:"The mechanisms for silicon oxidation in steam and oxygen"
2777:
three-terminal device, such as transistors or single-gate
1979:, the higher input resistance of the FET is advantageous.
1880:) for conduction. The four terminals of the FET are named
1167:
Modern transistor audio amplifiers of up to a few hundred
6660:. Englewood Cliffs, NJ: Prentice-Hall. pp. 301â305.
4677:
3674:
3287:
3125:
3121:
2425:(OFET), in which the semiconductor is an organic compound
2052:
1933:
below threshold, and then at a roughly quadratic rate: (
1840:
547:, read the mechanical encoding from punched metal cards.
6313:
4279:"Method And Apparatus For Controlling Electric Currents"
3597:
It is less suitable for fabricating integrated circuits.
2394:(HEMT): GaN (Gallium Nitride), SiC (Silicon Carbide), Ga
839:
in 2009. Other Milestones include the inventions of the
7567:; R.L. Riddle and M.P. Ristenbatt; Prentice-Hall; 1957.
6617:
6615:
6277:
FETs/MOSFETs: Smaller apps push up surface-mount supply
6130:
4324:"Twists and Turns in the Development of the Transistor"
2803:(|JIS-C-7012), labels transistor devices starting with
2443:
Electrolyteâoxideâsemiconductor field-effect transistor
2063:
The metalâoxideâsemiconductor field-effect transistor (
812:(fin field-effect transistor), a type of 3D non-planar
784:
in 1967. In 1967, Bell Labs researchers Robert Kerwin,
7683:; 1978; National Semiconductor (now Texas Instruments)
7208:
6573:(2nd ed.). Cambridge University Press. p. .
6502:
5439:. Springer Science & Business Media. p. 322.
4562:
4495:
The Design of CMOS Radio-Frequency Integrated Circuits
3173:
Silicon, high frequency, high power (for transmitters)
2811:
and a 2SC1815 might be listed by a supplier as simply
2259:
Bipolar junction transistor § Bipolar transistors
1776:
to remember the type of transistor (represented by an
7058:"Datasheet for BC549, with A, B and C gain groupings"
6559:
6178:
5869:. Springer Science & Business Media. p. 11.
4318:
4316:
4238:
Twists and Turns in the Development of the Transistor
2794:
535:
until it was a few ten-thousandths of an inch thick.
7535:
The Power Transistor - Temperature and Heat Transfer
6612:
6598:. New York, Berlin: Springer. p. §0152, p. 28.
5404:"Highlights Of Silicon Thermal Oxidation Technology"
5243:
Huff, Howard; Riordan, Michael (September 1, 2007).
4001:
Huff, Howard; Riordan, Michael (September 1, 2007).
3788:
2417:
Fast-reverse epitaxial diode field-effect transistor
2094:
1202:
Very small size and weight, reducing equipment size.
974:. It can also be used as an electrically controlled
866:
since the late 20th century, paving the way for the
7630:
5829:
5789:
4904:"FCA North America - Historical Timeline 1950-1959"
3773:. Flexible transistors are useful in some kinds of
3746:TO-92, TO-126, TO220, TO247, TO251, TO262, ZTX851.
2439:(ISFET), to measure ion concentrations in solution,
2202:is by far the most widely used transistor for both
1760:Hence, a particular transistor may be described as
808:researchers Toshihiro Sekigawa and Yutaka Hayashi.
687:, limiting it to several specialized applications.
527:in 1953, capable of operating at frequencies up to
101:. It is one of the basic building blocks of modern
7126:"Richard Freeman's HP Part numbers Crossreference"
4313:
2711:Super-lattice castellated field effect transistors
1152:, vast numbers of products include amplifiers for
683:, a relatively bulky device that was difficult to
7496:Riordan, Michael & Hoddeson, Lillian (1998).
6252:"The most manufactured human artifact in history"
5944:Institute of Electrical and Electronics Engineers
5837:"1968: Silicon Gate Technology Developed for ICs"
5245:"Frosch and Derick: Fifty Years Later (Foreword)"
5090:
5037:. P. Siffert and E. F. Krimmel (eds.). Springer,
4003:"Frosch and Derick: Fifty Years Later (Foreword)"
3928:IEEE JOURNAL OF SOLID-STATE CIRCUITS Vol 32 No 12
2724:Joint Electron Device Engineering Council (JEDEC)
2272:Metalâoxideâsemiconductor field-effect transistor
169:metalâoxideâsemiconductor field-effect transistor
71:Metalâoxideâsemiconductor field-effect transistor
9233:
6593:
6134:IEEE Transactions on Semiconductor Manufacturing
5007:
2740:, indicating a three-terminal device. Dual-gate
1818:
1657:Maximum operating frequency: low, medium, high,
1237:Transistors may have the following limitations:
7724:Transistor | Definition & Uses | Britannica
7577:
6317:Digital Systems: From Logic Gates to Processors
5889:
5500:IRE-AIEE Solid State Device Research Conference
5363:Ligenza, J. R.; Spitzer, W. G. (July 1, 1960).
4415:(3rd ed.). Boston: Houghton Mifflin. 1992.
3556:) must be used to compensate for such changes.
1994:(IGFET). The IGFET is more commonly known as a
1780:) involves the direction of the arrow. For the
1174:
1117:is designed so that a small change in voltage (
554:was shown by INTERMETALL, a company founded by
485:. Mataré had previous experience in developing
198:, or may have two kinds of charge carriers in
7515:
7331:
6777:
5770:
5362:
5152:
4772:1953 Foreign Commerce Weekly; Volume 49; pp.23
4442:
4440:
4385:
4132:
3325:As older "through-hole" transistors are given
2815:. This series sometimes has suffixes, such as
8800:
7750:
6648:
6646:
6553:
5281:
5035:Silicon: evolution and future of a technology
4703:
3076:, small-signal transistor ("general purpose")
2736:transistor device numbers usually start with
2453:Deoxyribonucleic acid field-effect transistor
1683:Application: switch, general purpose, audio,
1100:
923:, to produce complete electronic circuits. A
347:A replica of the first working transistor, a
7468:: CS1 maint: multiple names: authors list (
6454:
5331:
5300:
5208:
5122:Semiconductor Devices for Power Conditioning
4309:. United States Patent and Trademark Office.
4295:. United States Patent and Trademark Office.
4281:. United States Patent and Trademark Office.
4039:
3738:transistors are as small as grains of sand.
2839:, etc., to denote variants, such as tighter
2193:
2010:which, similarly, forms a diode between its
519:The first high-frequency transistor was the
474:Compagnie des Freins et Signaux Westinghouse
6384:Understanding Modern Transistors and Diodes
5490:
5242:
5081:March 7, 1933 (filed in US March 28, 1928).
4437:
4370:
4192:
4000:
2386:Metalâsemiconductor field-effect transistor
1628:
733:stack and published their results in 1960.
614:
331:in 1948; Bardeen and Brattain invented the
113:for connection to an electronic circuit. A
8807:
8793:
7757:
7743:
7448:(3 ed.). Cambridge University Press.
7094:"Datasheet for BUK854-800A (800volt IGBT)"
6743:Buonomo, S.; Ronsisvalle, C.; Scollo, R.;
6643:
6376:
6374:
6372:
6370:
6368:
6366:
6364:
6210:
6208:
5369:Journal of Physics and Chemistry of Solids
4763:, AIEE Transactions, September 1953, p.388
4375:. AT&T Bell Laboratories. p. 102.
4219:
4139:Journal of Physics and Chemistry of Solids
2159:) increase exponentially according to the
1919:) is increased, the drainâsource current (
702:
47:packages, including (from left to right):
7764:
7476:
7308:
7240:
7238:
6993:"The New, New Transistor - IEEE Spectrum"
6652:
6528:
6078:United States Patent and Trademark Office
5780:
5719:
5603:
5548:Technical Memorandum of Bell Laboratories
5453:
5177:
5171:
5162:
5115:
4633:"1948, The European Transistor Invention"
4468:
4446:
4307:"Device For Controlling Electric Current"
4157:
4077:Technical Memorandum of Bell Laboratories
3696:(see image). The two main categories are
3400:
3388:Learn how and when to remove this message
2458:Field-effect transistor-based biosensor (
2237:
1627:(research ongoing since 2004), etc. (see
1382:Learn how and when to remove this message
1041:
804:MOSFET was first demonstrated in 1984 by
561:Internationale Funkausstellung DĂŒsseldorf
186:Most transistors are made from very pure
7700:The Bell Systems Memorial on Transistors
7665:; 1985; Fairchild (now ON Semiconductor)
7184:"CV Device Cross-reference by Andy Lake"
6747:; Musumeci, S.; Pagano, R.; Raciti, A.;
6067:
6065:
5866:FinFETs and Other Multi-Gate Transistors
5544:"Silicon-Silicon Dioxide Surface Device"
5408:Silicon materials science and technology
4979:
4639:from the original on September 29, 2012.
4073:"Silicon-Silicon Dioxide Surface Device"
3673:
3665:
2715:
2700:Carbon-doped silicon-germanium (Si-Ge:C)
2645:have a single channel with two gates in
2491:
2241:
2181:
1834:
1465:Insulated-gate bipolar transistor (IGBT)
1460:
1104:
1045:
957:
796:and Tom Klein used to develop the first
712:
365:
354:
342:
311:
227:
65:
38:
8979:Application-specific integrated circuit
8814:
7671:, 1987; Motorola (now ON semiconductor)
6856:
6587:
6473:from the original on December 29, 2009.
6380:
6361:
6205:
5934:"IEEE Andrew S. Grove Award Recipients"
5862:
5459:
4982:"Education and the Innovator's Dilemma"
4932:
4926:
4817:"Regency TR-1 Transistor Radio History"
4258:
4256:
3915:
3913:
3764:
3605:tends to be swifter than an equivalent
3406:Semiconductor material characteristics
2372:Ferroelectric field-effect transistor (
2367:Carbon nanotube field-effect transistor
1271:chips are used for spacecraft devices).
1171:are common and relatively inexpensive.
1066:and for low-power applications such as
953:
374:From November 17 to December 23, 1947,
281:(FET) in Canada in 1925, intended as a
14:
9272:Computer-related introductions in 1947
9234:
7235:
7209:Sedra, A.S. & Smith, K.C. (2004).
7202:
6809:Zhong Yuan Chang, Willy M. C. Sansen,
6491:from the original on February 8, 2008.
6464:118th AES Convention, Barcelona, Spain
6407:
6381:Pulfrey, David L. (January 28, 2010).
6340:
6232:from the original on December 11, 2021
6099:
5338:Journal of the Electrochemical Society
5307:Journal of the Electrochemical Society
5238:
5236:
5215:Journal of the Electrochemical Society
4360:from the original on January 20, 2013.
4046:Journal of the Electrochemical Society
3982:from the original on December 16, 2014
3146:Silicon, switching transistor (BJT or
2053:Metalâoxideâsemiconductor FET (MOSFET)
629:(FET) was first proposed by physicist
297:
8788:
7738:
7338:Journal of Physics D: Applied Physics
7244:
7190:from the original on January 21, 2012
7011:
6448:
6442:"Transistor Base Resistor Calculator"
6062:
6035:
5826:, vol. 46, no. 4, 1967, pp. 1288â1295
5578:
5541:
5434:
5395:
5249:The Electrochemical Society Interface
4960:Snook, Chris J. (November 29, 2017).
4959:
4823:from the original on October 21, 2004
4556:
4170:Springer Science & Business Media
4163:
4133:Ligenza, J.R.; Spitzer, W.G. (1960).
4107:
4070:
4007:The Electrochemical Society Interface
3057:Germanium, power switching transistor
2906:N-channel FET (both JFET and MOSFET)
2898:P-channel FET (both JFET and MOSFET)
2437:Ion-sensitive field-effect transistor
2429:Ballistic transistor (disambiguation)
2380:Junction gate field-effect transistor
1253:used as amplifiers in some satellites
294:patented a similar device in Europe.
8914:Three-dimensional integrated circuit
8189:Three-dimensional integrated circuit
7677:; 1982; SGS (now STMicroelectronics)
7669:Small-Signal Semiconductors Databook
7500:. W.W Norton & Company Limited.
6279:. globalsources.com (April 18, 2007)
6009:from the original on October 8, 2011
5662:"Transistors Keep Moore's Law Alive"
5581:History of Semiconductor Engineering
5437:History of Semiconductor Engineering
5401:
5013:"The Lost History of the Transistor"
4449:IEEE Industrial Electronics Magazine
4433:from the original on March 12, 2007.
4253:
4166:History of Semiconductor Engineering
4110:History of Semiconductor Engineering
3910:
3370:adding citations to reliable sources
3341:
2769:two-terminal device, such as diodes
2018:. Also, both devices operate in the
1982:FETs are divided into two families:
1647:(BJTs), N-channel, P-channel (FETs).
1320:adding citations to reliable sources
1291:
1263:They are sensitive to radiation and
695:barrier that prevented the external
521:surface-barrier germanium transistor
254:invented in 1907, enabled amplified
7970:Programmable unijunction transistor
7622:. February 24, 2003. Archived from
7106:from the original on April 15, 2012
7038:from the original on April 26, 2016
7012:Staff, The SE (February 23, 2024).
6891:from the original on April 14, 2016
6834:. Snow.stanford.edu. Archived from
5233:
5058:. McGraw-Hill Professional. p. 10.
4980:Kozinsky, Sieva (January 8, 2014).
4875:from the original on April 10, 2017
4849:from the original on April 27, 2017
4661:from the original on April 4, 2017.
4491:
4485:
3952:from the original on March 22, 2016
3692:Transistors come in many different
3584:Its maximum temperature is limited.
3436:
2673:Nanoscale vacuum-channel transistor
2535:Emitter-switched bipolar transistor
2433:FETs used to sense the environment
2257:For early bipolar transistors, see
1788:transistor symbol, the arrow will "
1179:Before transistors were developed,
818:Hitachi Central Research Laboratory
24:
8926:Erasable programmable logic device
7871:Multi-gate field-effect transistor
7580:"How Europe Missed the Transistor"
7427:
7074:from the original on April 7, 2012
6953:"Paper Transistor - IEEE Spectrum"
3594:It cannot withstand high voltages.
3308:
2795:Japanese Industrial Standard (JIS)
2679:Organic electrochemical transistor
2643:Dual-gate field-effect transistors
2577:, where it switches by modulating
2515:Insulated-gate bipolar transistors
2411:Inverted-T field-effect transistor
2308:Multi-gate field-effect transistor
607:in May 1954. This was the work of
335:in 1947 and Shockley invented the
25:
9298:
8961:Complex programmable logic device
7849:Insulated-gate bipolar transistor
7687:
7479:Principles of Transistor Circuits
7245:Greig, William (April 24, 2007).
7132:from the original on June 5, 2012
6865:from the original on July 2, 2012
6857:Sanders, Robert (June 28, 2005).
5824:The Bell System Technical Journal
5742:10.1038/scientificamerican0873-48
5332:Frosch, C. J.; Derick, L (1957).
5301:Frosch, C. J.; Derick, L (1957).
5209:Frosch, C. J.; Derick, L (1957).
4797:from the original on May 15, 2016
4685:from the original on July 3, 2017
4427:"The Nobel Prize in Physics 1956"
4293:"Amplifier For Electric Currents"
4220:Lilienfeld, Julius Edgar (1927).
4040:Frosch, C. J.; Derick, L (1957).
3994:
3972:"The Nobel Prize in Physics 1956"
3612:high-electron-mobility transistor
3299:British Military CV Naming System
2476:Heterojunction bipolar transistor
2407:Negative-Capacitance FET (NC-FET)
2392:High-electron-mobility transistor
2095:Bipolar junction transistor (BJT)
1560:insulated-gate bipolar transistor
1287:
1054:Transistors are commonly used in
988:bipolar junction transistor (BJT)
8093:Heterostructure barrier varactor
7820:Chemical field-effect transistor
7518:Analogue and Digital Electronics
7372:
7325:
7268:
7176:
7164:from the original on May 8, 2016
7144:
7118:
7086:
7050:
7024:
7005:
6985:
6965:
6945:
6931:
6917:
6903:
6885:"The return of the vacuum tube?"
6877:
6850:
6824:
6803:
6771:
6736:
6704:
6674:
6341:Roland, James (August 1, 2016).
5775:. Vol. 550. pp. 3â32.
5157:. Vol. 550. pp. 3â32.
4933:Skrabec, Quentin R. Jr. (2012).
3791:
3771:organic field-effect transistors
3346:
2667:Junctionless nanowire transistor
2649:, a configuration optimized for
1513:
1506:
1499:
1487:
1480:
1473:
1430:
1420:
1408:
1398:
1296:
880:semiconductor device fabrication
843:in 1948 and the MOSFET in 1959.
183:, and other electronic devices.
8973:Field-programmable object array
8909:Mixed-signal integrated circuit
8141:Mixed-signal integrated circuit
7675:Discrete Power Devices Databook
7565:Transistor Physics and Circuits
6682:"MOSFET DIFFERENTIAL AMPLIFIER"
6496:
6477:
6434:
6401:
6334:
6307:
6282:
6270:
6244:
6216:"Triumph of the MOS Transistor"
6172:
6124:
6103:Analog Electronics with LabVIEW
6093:
6048:National Inventors Hall of Fame
6021:
5991:
5962:
5926:
5883:
5856:
5816:
5764:
5713:
5654:
5597:
5572:
5535:
5506:
5484:
5428:
5356:
5325:
5294:
5275:
5202:
5146:
5118:"Junction Field-Effect Devices"
5109:
5084:
5069:
5048:
5027:
5001:
4973:
4953:
4896:
4887:
4861:
4835:
4809:
4775:
4766:
4753:
4744:
4732:
4697:
4673:"A Working Junction Transistor"
4665:
4643:
4625:
4606:
4587:
4419:
4404:
4379:
4364:
4346:
4334:
4299:
4285:
4271:
4230:
4213:
4186:
3431:
3357:needs additional citations for
3337:
3318:, the other the higher-powered
3305:assigned the CV number: CV7763
3196:horizontal deflection circuits)
3041:Germanium, switching transistor
2423:Organic field-effect transistor
2376:), uses ferroelectric materials
2246:A transistor symbol created on
1542:Transistors are categorized by
1307:needs additional citations for
878:by a highly automated process (
776:in 1963. The first report of a
699:from penetrating the material.
147:invented in 1947 by physicists
7358:10.1088/0022-3727/45/14/143001
7336:] silicon nanomembranes".
7014:"Chip Industry Week In Review"
6712:"IGBT Module 5SNA 2400E170100"
6658:Solid State Electronic Devices
6387:. Cambridge University Press.
5693:"Who Invented the Transistor?"
5468:Johns Hopkins University Press
5178:Moskowitz, Sanford L. (2016).
4793:. Welt.de. November 23, 2011.
4508:10.1108/ssmt.2004.21916bae.002
4390:. Crown Publishers, New York.
4126:
4101:
4064:
4033:
3964:
3934:
3885:
3513:The first BJTs were made from
3270:
2575:Tunnel field-effect transistor
2551:and integrated current mirrors
2230:applications in the 1980s. In
2075:of a semiconductor, typically
2040:FETs are further divided into
2033:pân junction is replaced by a
1926:) increases exponentially for
1804:transistor symbol, the arrow "
1703:
1232:
872:US Patent and Trademark Office
788:and John Sarace developed the
109:, usually with at least three
13:
1:
9099:Hardware description language
8967:Field-programmable gate array
7694:BBC: Building the digital age
7442:& Hill, Winfield (2015).
6832:"Single Electron Transistors"
5093:The Physics of Semiconductors
4356:. American Physical Society.
3879:
3848:Semiconductor device modeling
3670:Assorted discrete transistors
2933:EECA transistor prefix table
2801:JIS semiconductor designation
1996:metalâoxideâsemiconductor FET
1819:Field-effect transistor (FET)
1694:metal, through-hole plastic,
1186:
1011:field-effect transistor (FET)
823:
414:as a contraction of the term
258:technology and long-distance
8172:Silicon controlled rectifier
8034:Organic light-emitting diode
7924:Diffused junction transistor
7696:photo history of transistors
7631:Bacon, W. Stevenson (1968).
6887:. Gizmag.com. May 28, 2012.
5912:10.1016/0038-1101(84)90036-4
5381:10.1016/0022-3697(60)90219-5
5130:10.1007/978-1-4684-7263-9_11
5116:Nishizawa, Jun-Ichi (1982).
4939:. ABC-CLIO. pp. 195â7.
4413:American Heritage Dictionary
4151:10.1016/0022-3697(60)90219-5
3868:Very Large Scale Integration
3823:Diffused junction transistor
3651:
2850:JIS transistor prefix table
2035:metalâsemiconductor junction
1872:, uses either electrons (in
1767:
1175:Comparison with vacuum tubes
1064:switched-mode power supplies
780:was made by Dawon Kahng and
506:bipolar junction transistors
493:and germanium in the German
163:; the three shared the 1956
7:
9111:Formal equivalence checking
7976:Static induction transistor
7913:Bipolar junction transistor
7865:MOS field-effect transistor
7837:Fin field-effect transistor
6749:University of Catania Italy
6100:Ashley, Kenneth L. (2002).
6003:IEEE Global History Network
5606:"Through-Silicon Via (TSV)"
5460:Bassett, Ross Knox (2007).
5412:The Electrochemical Society
4635:. Computer History Museum.
3843:Nanoelectromechanical relay
3838:Magneto-Electric Spin-Orbit
3784:
3192:Silicon, high voltage (for
2708:Aluminum nitride transistor
2609:Single-electron transistors
2549:transistorâtransistor logic
2545:Multiple-emitter transistor
2470:Bipolar junction transistor
2314:Fin field-effect transistor
2212:bipolar junction transistor
2175:the package and are called
2101:Bipolar junction transistor
1687:, super-beta, matched pair.
806:Electrotechnical Laboratory
679:, companies focused on the
625:The basic principle of the
550:The first prototype pocket
337:bipolar junction transistor
308:Bipolar junction transistor
202:devices. Compared with the
200:bipolar junction transistor
122:form are found embedded in
45:bipolar junction transistor
32:Transistor (disambiguation)
10:
9303:
9131:Hierarchical state machine
9089:Transaction-level modeling
8183:Static induction thyristor
7596:10.1109/MSPEC.2005.1526906
7477:Amos SW, James MR (1999).
6813:, page 31, Springer, 1991
6108:Prentice Hall Professional
5939:IEEE Andrew S. Grove Award
5773:AIP Conference Proceedings
5625:10.1109/JPROC.2008.2007462
5556:10.1142/9789814503464_0076
5155:AIP Conference Proceedings
5091:Grundmann, Marius (2010).
4718:10.1109/JRPROC.1953.274351
4500:Cambridge University Press
4236:Vardalas, John (May 2003)
4193:Moavenzadeh, Fred (1990).
4085:10.1142/9789814503464_0076
3655:
2890:audio-frequency nâpân BJT
2874:audio-frequency pânâp BJT
2256:
2098:
2056:
2025:Metalâsemiconductor FETs (
1828:
1822:
1101:Transistor as an amplifier
706:
675:In the early years of the
618:
301:
235:proposed the concept of a
221:
217:
139:proposed the concept of a
29:
9208:
9141:
9057:
9032:Digital signal processing
9017:Logic in computer science
8994:
8943:Programmable logic device
8903:Hybrid integrated circuit
8822:
8720:
8620:
8587:
8519:
8456:
8384:
8352:(Hexode, Heptode, Octode)
8290:
8222:
8104:Hybrid integrated circuit
8068:
7996:
7947:Light-emitting transistor
7901:
7783:
7772:
7719:American Physical Society
7481:. Butterworth-Heinemann.
7018:Semiconductor Engineering
6594:Sansen, W. M. C. (2006).
6455:van der Veen, M. (2005).
6412:. pp. 47â54, 60â61.
6029:"List of IEEE Milestones"
4843:"The Regency TR-1 Family"
4371:Millman, S., ed. (1983).
4248:IEEE-USA Today's Engineer
3097:Silicon, power transistor
2882:high-frequency nâpân BJT
2866:high-frequency pânâp BJT
2651:high-frequency amplifiers
2226:) replaced them for most
2194:Usage of MOSFETs and BJTs
2029:) are JFETs in which the
1639:(positive and negative):
1580:(first used in 1947) and
1524:
1131:produce large changes in
1038:. (Base Emitter Voltage)
940:electromechanical devices
856:communications technology
800:MOS integrated circuit.A
736:Following this research,
224:History of the transistor
9044:Switching circuit theory
8949:Programmable Array Logic
8937:Programmable logic array
8399:Backward-wave oscillator
8109:Light emitting capacitor
7965:Point-contact transistor
7935:Junction Gate FET (JFET)
7578:Michael Riordan (2005).
7251:. Springer. p. 63.
7213:Microelectronic circuits
6765:10.1109/IAS.2003.1257745
6596:Analog design essentials
5054:McFarland, Grant (2006)
4461:10.1109/MIE.2017.2757775
4243:January 8, 2015, at the
3625:aluminum gallium nitride
3549:junction forward voltage
3418:voltage @ 25 °C, V
3001:Germanium, small-signal
2779:field-effect transistors
2742:field-effect transistors
2690:GermaniumâTin Transistor
2555:Multiple-base transistor
2353:, for power electronics
2302:amplification, reception
1975:For low noise at narrow
1584:(first used in 1954)âin
1565:Semiconductor material (
1282:
1115:common-emitter amplifier
689:Field-effect transistors
637:for a device similar to
615:Field effect transistors
427:point-contact transistor
349:point-contact transistor
333:point-contact transistor
304:Point-contact transistor
271:crystal diode oscillator
145:point-contact transistor
9257:20th-century inventions
9094:Register-transfer level
8410:Crossed-field amplifier
7929:Field-effect transistor
7729:EncyclopĂŠdia Britannica
7520:. Macmillan Press Ltd.
7516:Warnes, Lionel (1998).
7065:Fairchild Semiconductor
7034:. Clivetec.0catch.com.
6628:Computer History Museum
6530:10.1126/science.aau0759
6408:Kaplan, Daniel (2003).
6347:. Lerner Publications.
6226:Computer History Museum
6147:10.1109/TSM.2004.841816
5892:Solid-State Electronics
5842:Computer History Museum
5802:Computer History Museum
5698:Computer History Museum
5613:Proceedings of the IEEE
5522:Computer History Museum
5402:Deal, Bruce E. (1998).
5019:: 48â49. Archived from
4908:www.fcanorthamerica.com
4739:The Wall Street Journal
4655:www.computerhistory.org
4492:Lee, Thomas H. (2003).
4386:Bodanis, David (2005).
3946:Computer History Museum
3587:It has relatively high
3292:Fairchild Semiconductor
2503:large-scale integration
2266:Field-effect transistor
2186:2N2222A NPN Transistor.
1865:field-effect transistor
1825:Field-effect transistor
1258:electrostatic discharge
1247:television transmitters
1225:in audio applications).
1181:vacuum (electron) tubes
938:circuits have replaced
774:Fairchild Semiconductor
703:MOSFET (MOS transistor)
631:Julius Edgar Lilienfeld
627:field-effect transistor
621:Field-effect transistor
582:The Wall Street Journal
392:Murray Hill, New Jersey
279:field-effect transistor
275:Julius Edgar Lilienfeld
237:field-effect transistor
233:Julius Edgar Lilienfeld
196:field-effect transistor
141:field-effect transistor
137:Julius Edgar Lilienfeld
97:electrical signals and
8985:Tensor Processing Unit
8579:Voltage-regulator tube
8146:MOS integrated circuit
8011:Constant-current diode
7987:Unijunction transistor
7445:The Art of Electronics
6570:The Art of Electronics
5863:Colinge, J.P. (2008).
5604:Motoyoshi, M. (2009).
4706:Proceedings of the IRE
3808:Alpha cutoff frequency
3694:semiconductor packages
3686:
3671:
3523:compound semiconductor
3428:@ 25 °C, m/(V·s)
3423:@ 25 °C, m/(V·s)
3401:Semiconductor material
2615:Nanofluidic transistor
2591:Unijunction transistor
2509:Darlington transistors
2506:
2254:
2238:Other transistor types
2187:
2079:. It has an insulated
1859:
1676:, an abbreviation for
1629:Semiconductor material
1466:
1110:
1051:
1042:Transistor as a switch
1014:has terminals labeled
991:has terminals labeled
963:
718:
677:semiconductor industry
431:Nobel Prize in Physics
371:
363:
352:
340:
240:
165:Nobel Prize in Physics
107:semiconductor material
78:
63:
9287:Semiconductor devices
9277:Electrical components
9200:Electronic literature
9154:Hardware acceleration
9022:Computer architecture
8920:Emitter-coupled logic
8857:Printed circuit board
8648:Electrolytic detector
8421:Inductive output tube
8237:Low-dropout regulator
8152:Organic semiconductor
8083:Printed circuit board
7919:Darlington transistor
7766:Electronic components
7610:on February 14, 2008.
7382:Nature Nanotechnology
5186:John Wiley & Sons
5078:U.S. patent 1,900,018
4571:John Wiley & Sons
4265:U.S. patent 1,745,175
3677:
3669:
3658:Semiconductor package
2716:Device identification
2498:Darlington transistor
2495:
2245:
2185:
2128:. They are useful in
1868:, sometimes called a
1838:
1709:Amplification factor
1702:, power modules (see
1464:
1251:travelling wave tubes
1241:They lack the higher
1108:
1049:
961:
921:electronic components
716:
594:electronic technology
471:while working at the
369:
358:
346:
315:
302:Further information:
277:filed a patent for a
231:
69:
42:
9282:Hungarian inventions
9126:Finite-state machine
9104:High-level synthesis
9039:Circuit minimization
8466:Beam deflection tube
8135:Metal-oxide varistor
8028:Light-emitting diode
7882:Thin-film transistor
7843:Floating-gate MOSFET
7402:10.1038/NNANO.2011.1
6751:(October 16, 2003).
6485:"Transistor Example"
6410:Hands-On Electronics
6344:How Transistors Work
5950:on September 9, 2018
5124:. pp. 241â272.
4532:on October 21, 2021.
3779:flexible electronics
3765:Flexible transistors
3712:surface-mount device
3632:junction temperature
3366:improve this article
3279:. Since devices are
2639:(prototype by Intel)
2585:Diffusion transistor
2487:avalanche transistor
2357:lateral diffused MOS
2346:non-volatile storage
2342:Floating-gate MOSFET
2328:Thin-film transistor
2252:University of Aveiro
2161:Shockley diode model
2073:controlled oxidation
1966:space-charge-limited
1690:Physical packaging:
1678:transition frequency
1654:: low, medium, high.
1562:(IGBT), other types.
1456:BJT and JFET symbols
1316:improve this article
954:Simplified operation
778:floating-gate MOSFET
645:in the 1930s and by
458:junction transistors
208:Traveling-wave tubes
105:. It is composed of
87:semiconductor device
30:For other uses, see
9262:American inventions
9173:Digital photography
8955:Generic Array Logic
8877:Combinational logic
8852:Printed electronics
8816:Digital electronics
8442:Traveling-wave tube
8242:Switching regulator
8078:Printed electronics
8055:Step recovery diode
7832:Depletion-load NMOS
7394:2011NatNa...6..156S
7350:2012JPhD...45n3001Z
7293:2013NatSR...3E2609R
6521:2018Sci...362.1131G
6515:(6419): 1131â1134.
6444:. January 27, 2012.
6418:2003hoe..book.....K
6031:. December 9, 2020.
5904:1984SSEle..27..827S
5734:1973SciAm.229b..48H
5722:Scientific American
5670:. December 12, 2018
5095:. Springer-Verlag.
4330:on January 8, 2015.
3818:Digital electronics
3531:semiconductor alloy
3407:
2934:
2851:
2754:
2753:JEDEC prefix table
2482:Schottky transistor
2248:Portuguese pavement
2232:integrated circuits
1870:unipolar transistor
1637:Electrical polarity
1622:allotrope of carbon
1072:rise and fall times
1060:electronic switches
893:integrated circuits
864:digital electronics
841:junction transistor
681:junction transistor
596:in the late 1950s.
533:indium(III) sulfate
298:Bipolar transistors
124:integrated circuits
43:Size comparison of
9252:1947 in technology
9121:Asynchronous logic
8897:Integrated circuit
8862:Electronic circuit
8747:Crystal oscillator
8607:Variable capacitor
8282:Switched capacitor
8224:Voltage regulators
8098:Integrated circuit
7982:Tetrode transistor
7960:Pentode transistor
7953:Organic LET (OLET)
7940:Organic FET (OFET)
7620:The New York Times
7281:Scientific Reports
6779:STMicroelectronics
6745:STMicroelectronics
6228:. August 6, 2010.
5701:. December 4, 2013
5579:Lojek, Bo (2007).
5542:KAHNG, D. (1961).
5518:The Silicon Engine
5470:. pp. 22â23.
5435:Lojek, Bo (2007).
5261:10.1149/2.F02073IF
4429:. nobelprize.org.
4164:Lojek, Bo (2007).
4108:Lojek, Bo (2007).
4071:KAHNG, D. (1961).
4019:10.1149/2.F02073IF
3978:. Nobel Media AB.
3833:Optical transistor
3799:Electronics portal
3755:direct chip attach
3687:
3672:
3421:Electron mobility
3405:
3249:power transistor (
3245:Gallium arsenide,
2932:
2849:
2846:(gain) groupings.
2752:
2705:Diamond transistor
2637:Trigate transistor
2632:Pentode transistor
2627:Tetrode transistor
2581:through a barrier.
2507:
2255:
2188:
1992:insulated gate FET
1860:
1467:
1269:radiation-hardened
1207:integrated circuit
1158:radio transmission
1154:sound reproduction
1111:
1052:
964:
764:) was invented by
719:
487:crystal rectifiers
372:
364:
353:
341:
241:
79:
73:(MOSFET), showing
64:
9247:1947 in computing
9229:
9228:
9178:Digital telephone
9149:Computer hardware
9116:Synchronous logic
8782:
8781:
8742:Ceramic resonator
8554:Mercury-arc valve
8506:Video camera tube
8458:Cathode-ray tubes
8218:
8217:
7826:Complementary MOS
7681:Discrete Databook
7663:Discrete Databook
7626:on June 23, 2009.
7561:
7550:
7543:978-0-07-001729-0
7527:978-0-333-65820-8
7507:978-0-393-31851-7
7488:978-0-7506-4427-3
7301:10.1038/srep02609
7228:978-0-19-514251-8
7221:and Figure 5.17.
7032:"Transistor Data"
6913:. April 28, 2023.
6838:on April 26, 2012
6724:on April 26, 2012
6690:Boston University
6667:978-0-13-822023-5
6605:978-0-387-25746-4
6580:978-0-521-37095-0
6427:978-0-511-07668-8
6394:978-1-139-48467-1
6354:978-1-5124-2146-0
6327:978-3-319-41198-9
5782:10.1063/1.1354371
5650:on July 19, 2019.
5590:978-3-540-34258-8
5565:978-981-02-0209-5
5477:978-0-8018-8639-3
5350:10.1149/1.2428650
5319:10.1149/1.2428650
5227:10.1149/1.2428650
5164:10.1063/1.1354371
5139:978-1-4684-7265-3
5102:978-3-642-13884-3
4712:(12): 1702â1706.
4397:978-0-7394-5670-5
4388:Electric Universe
4119:978-3-540-34258-8
4094:978-981-02-0209-5
4058:10.1149/1.2428650
3775:flexible displays
3566:electron mobility
3534:silicon-germanium
3511:
3510:
3416:Junction forward
3398:
3397:
3390:
3268:
3267:
3120:(high frequency)
2910:
2909:
2792:
2791:
2621:Multigate devices
2579:quantum tunneling
2519:ASEA Brown Boveri
2290:complementary MOS
1972:technology node.
1778:electrical symbol
1615:silicon-germanium
1534:
1533:
1453:
1452:
1392:
1391:
1384:
1366:
1243:electron mobility
1197:cathode poisoning
1162:signal processing
790:self-aligned gate
605:Texas Instruments
570:Texas Instruments
16:(Redirected from
9294:
8882:Sequential logic
8809:
8802:
8795:
8786:
8785:
8636:electrical power
8521:Gas-filled tubes
8405:Cavity magnetron
8232:Linear regulator
7781:
7780:
7759:
7752:
7745:
7736:
7735:
7726:"Transistor" at
7652:
7627:
7611:
7606:. Archived from
7557:
7546:
7531:
7511:
7492:
7473:
7467:
7459:
7422:
7421:
7376:
7370:
7369:
7329:
7323:
7322:
7312:
7272:
7266:
7265:
7242:
7233:
7232:
7216:
7206:
7200:
7199:
7197:
7195:
7180:
7174:
7173:
7171:
7169:
7163:
7156:
7148:
7142:
7141:
7139:
7137:
7128:. Hpmuseum.org.
7122:
7116:
7115:
7113:
7111:
7105:
7098:
7090:
7084:
7083:
7081:
7079:
7073:
7062:
7054:
7048:
7047:
7045:
7043:
7028:
7022:
7021:
7009:
7003:
7002:
6989:
6983:
6982:
6969:
6963:
6962:
6949:
6943:
6942:
6935:
6929:
6928:
6921:
6915:
6914:
6907:
6901:
6900:
6898:
6896:
6881:
6875:
6874:
6872:
6870:
6861:. Berkeley.edu.
6854:
6848:
6847:
6845:
6843:
6828:
6822:
6807:
6801:
6800:
6795:
6793:
6775:
6769:
6768:
6740:
6734:
6733:
6731:
6729:
6723:
6717:. Archived from
6716:
6708:
6702:
6701:
6699:
6697:
6686:
6678:
6672:
6671:
6650:
6641:
6640:
6638:
6636:
6619:
6610:
6609:
6591:
6585:
6584:
6557:
6551:
6550:
6532:
6500:
6494:
6493:071003 bcae1.com
6492:
6481:
6475:
6474:
6472:
6461:
6452:
6446:
6445:
6438:
6432:
6431:
6405:
6399:
6398:
6378:
6359:
6358:
6338:
6332:
6331:
6311:
6305:
6304:
6302:
6300:
6286:
6280:
6274:
6268:
6267:
6265:
6263:
6256:Computer History
6248:
6242:
6241:
6239:
6237:
6212:
6203:
6202:
6176:
6170:
6169:
6128:
6122:
6121:
6097:
6091:
6090:
6088:
6086:
6069:
6060:
6059:
6057:
6055:
6039:
6033:
6032:
6025:
6019:
6018:
6016:
6014:
5995:
5989:
5988:
5986:
5984:
5974:
5966:
5960:
5959:
5957:
5955:
5946:. Archived from
5930:
5924:
5923:
5887:
5881:
5880:
5860:
5854:
5853:
5851:
5849:
5833:
5827:
5820:
5814:
5813:
5811:
5809:
5793:
5787:
5786:
5784:
5768:
5762:
5761:
5717:
5711:
5710:
5708:
5706:
5689:
5680:
5679:
5677:
5675:
5658:
5652:
5651:
5649:
5643:. Archived from
5610:
5601:
5595:
5594:
5576:
5570:
5569:
5539:
5533:
5532:
5530:
5528:
5510:
5504:
5503:
5488:
5482:
5481:
5457:
5451:
5450:
5432:
5426:
5425:
5399:
5393:
5392:
5360:
5354:
5353:
5329:
5323:
5322:
5298:
5292:
5291:
5290:
5286:
5279:
5273:
5272:
5240:
5231:
5230:
5206:
5200:
5199:
5175:
5169:
5168:
5166:
5150:
5144:
5143:
5113:
5107:
5106:
5088:
5082:
5080:
5073:
5067:
5052:
5046:
5031:
5025:
5024:
5023:on May 31, 2015.
5009:Riordan, Michael
5005:
4999:
4998:
4996:
4994:
4977:
4971:
4970:
4957:
4951:
4950:
4930:
4924:
4923:
4921:
4919:
4914:on April 2, 2015
4910:. Archived from
4900:
4894:
4891:
4885:
4884:
4882:
4880:
4865:
4859:
4858:
4856:
4854:
4839:
4833:
4832:
4830:
4828:
4813:
4807:
4806:
4804:
4802:
4779:
4773:
4770:
4764:
4757:
4751:
4748:
4742:
4736:
4730:
4729:
4701:
4695:
4694:
4692:
4690:
4669:
4663:
4662:
4647:
4641:
4640:
4629:
4623:
4621:
4620:
4616:
4610:
4604:
4602:
4601:
4597:
4591:
4585:
4584:
4560:
4554:
4553:
4547:
4543:
4541:
4533:
4528:. Archived from
4498:. Vol. 16.
4489:
4483:
4482:
4472:
4444:
4435:
4434:
4423:
4417:
4416:
4408:
4402:
4401:
4383:
4377:
4376:
4368:
4362:
4361:
4350:
4344:
4338:
4332:
4331:
4320:
4311:
4310:
4303:
4297:
4296:
4289:
4283:
4282:
4275:
4269:
4267:
4260:
4251:
4234:
4228:
4227:
4217:
4211:
4210:
4190:
4184:
4183:
4161:
4155:
4154:
4130:
4124:
4123:
4105:
4099:
4098:
4068:
4062:
4061:
4037:
4031:
4030:
3998:
3992:
3991:
3989:
3987:
3968:
3962:
3961:
3959:
3957:
3938:
3932:
3931:
3930:. December 1997.
3925:
3917:
3908:
3907:
3905:
3903:
3889:
3858:Transistor model
3853:Transistor count
3801:
3796:
3795:
3710:, also known as
3607:pânâp transistor
3603:nâpân transistor
3527:gallium arsenide
3438:
3433:
3408:
3404:
3393:
3386:
3382:
3379:
3373:
3350:
3342:
3216:Gallium arsenide
3025:power transistor
2985:power transistor
2935:
2931:
2852:
2848:
2755:
2751:
2696:Paper transistor
2563:radio front ends
2228:power electronic
2204:digital circuits
2177:phototransistors
2169:transconductance
2165:Ebers-Moll model
2046:enhancement-mode
1963:
1956:
1932:
1925:
1918:
1856:
1849:
1839:Operation of an
1750:transconductance
1747:
1732:
1720:
1675:
1601:gallium arsenide
1517:
1510:
1503:
1491:
1484:
1477:
1470:
1434:
1424:
1412:
1402:
1395:
1387:
1380:
1376:
1373:
1367:
1365:
1324:
1300:
1292:
1056:digital circuits
948:computer program
747:high scalability
656:was patented by
647:William Shockley
633:when he filed a
601:Morris Tanenbaum
558:in 1952, at the
552:transistor radio
530:
422:Lillian Hoddeson
400:William Shockley
351:invented in 1947
321:William Shockley
190:, and some from
157:William Shockley
21:
9302:
9301:
9297:
9296:
9295:
9293:
9292:
9291:
9232:
9231:
9230:
9225:
9204:
9137:
9072:Place and route
9067:Logic synthesis
9053:
9049:Gate equivalent
9012:Logic synthesis
9007:Boolean algebra
8990:
8932:Macrocell array
8892:Boolean circuit
8818:
8813:
8783:
8778:
8716:
8631:audio and video
8616:
8583:
8515:
8452:
8380:
8361:Photomultiplier
8286:
8214:
8162:Quantum circuit
8070:
8064:
8006:Avalanche diode
7992:
7904:
7897:
7786:
7775:
7768:
7763:
7690:
7637:Popular Science
7614:
7528:
7508:
7489:
7461:
7460:
7456:
7430:
7428:Further reading
7425:
7377:
7373:
7330:
7326:
7273:
7269:
7259:
7243:
7236:
7229:
7207:
7203:
7193:
7191:
7182:
7181:
7177:
7167:
7165:
7161:
7154:
7150:
7149:
7145:
7135:
7133:
7124:
7123:
7119:
7109:
7107:
7103:
7096:
7092:
7091:
7087:
7077:
7075:
7071:
7060:
7056:
7055:
7051:
7041:
7039:
7030:
7029:
7025:
7010:
7006:
6991:
6990:
6986:
6971:
6970:
6966:
6951:
6950:
6946:
6937:
6936:
6932:
6923:
6922:
6918:
6909:
6908:
6904:
6894:
6892:
6883:
6882:
6878:
6868:
6866:
6855:
6851:
6841:
6839:
6830:
6829:
6825:
6808:
6804:
6791:
6789:
6776:
6772:
6741:
6737:
6727:
6725:
6721:
6714:
6710:
6709:
6705:
6695:
6693:
6684:
6680:
6679:
6675:
6668:
6651:
6644:
6634:
6632:
6631:. April 2, 2018
6621:
6620:
6613:
6606:
6592:
6588:
6581:
6558:
6554:
6501:
6497:
6483:
6482:
6478:
6470:
6459:
6453:
6449:
6440:
6439:
6435:
6428:
6406:
6402:
6395:
6379:
6362:
6355:
6339:
6335:
6328:
6312:
6308:
6298:
6296:
6288:
6287:
6283:
6275:
6271:
6261:
6259:
6258:. April 2, 2018
6250:
6249:
6245:
6235:
6233:
6214:
6213:
6206:
6199:
6191:. p. 355.
6177:
6173:
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6125:
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6084:
6082:
6081:. June 10, 2019
6071:
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5489:
5485:
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5458:
5454:
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5433:
5429:
5422:
5414:. p. 183.
5400:
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5330:
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5280:
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5196:
5188:. p. 168.
5176:
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4398:
4384:
4380:
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4365:
4352:
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4339:
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4321:
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4305:
4304:
4300:
4291:
4290:
4286:
4277:
4276:
4272:
4263:
4261:
4254:
4245:Wayback Machine
4235:
4231:
4218:
4214:
4207:
4191:
4187:
4180:
4172:. p. 120.
4162:
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3923:
3919:
3918:
3911:
3901:
3899:
3891:
3890:
3886:
3882:
3877:
3863:Transresistance
3797:
3790:
3787:
3767:
3720:ball grid array
3664:
3654:
3621:gallium nitride
3617:heterostructure
3589:leakage current
3529:(GaAs) and the
3495:AlâSi junction
3435:
3427:
3422:
3417:
3412:
3403:
3394:
3383:
3377:
3374:
3363:
3351:
3340:
3311:
3309:Naming problems
3273:
3218:, small-signal
2961:, small-signal
2928:
2915:
2858:Type and usage
2845:
2827:, standing for
2797:
2761:Type and usage
2726:
2718:
2693:Wood transistor
2529:Phototransistor
2523:5SNA2400E170100
2401:
2397:
2330:(TFT), used in
2262:
2240:
2208:analog circuits
2196:
2190:
2158:
2151:
2103:
2097:
2061:
2055:
1962:
1958:
1953:
1946:
1939:
1934:
1931:
1927:
1924:
1920:
1917:
1913:
1876:) or holes (in
1855:
1851:
1848:
1844:
1833:
1827:
1821:
1770:
1746:
1738:
1735:transistor beta
1731:
1723:
1719:
1711:
1700:ball grid array
1674:
1666:
1605:silicon carbide
1594:monocrystalline
1590:polycrystalline
1540:
1539:
1538:
1459:
1458:
1457:
1388:
1377:
1371:
1368:
1325:
1323:
1313:
1301:
1290:
1285:
1235:
1189:
1177:
1137:
1130:
1123:
1103:
1044:
1037:
956:
944:microcontroller
895:(also known as
826:
794:Federico Faggin
760:(complementary
731:
711:
705:
662:George C. Dacey
658:Heinrich Welker
623:
617:
545:phototransistor
528:
469:Heinrich Welker
420:. According to
417:transresistance
380:Walter Brattain
325:Walter Brattain
310:
300:
269:discovered the
226:
220:
153:Walter Brattain
35:
28:
23:
22:
15:
12:
11:
5:
9300:
9290:
9289:
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9218:
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9210:
9206:
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9197:
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9190:
9188:cinematography
9180:
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9041:
9036:
9035:
9034:
9027:Digital signal
9024:
9019:
9014:
9009:
9004:
9002:Digital signal
8998:
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8739:
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8710:Wollaston wire
8702:
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8517:
8516:
8514:
8513:
8508:
8503:
8498:
8493:
8491:Selectron tube
8488:
8483:
8481:Magic eye tube
8478:
8473:
8468:
8462:
8460:
8454:
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8451:
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8095:
8090:
8085:
8080:
8074:
8072:
8066:
8065:
8063:
8062:
8057:
8052:
8050:Schottky diode
8047:
8042:
8037:
8031:
8025:
8019:
8014:
8008:
8002:
8000:
7994:
7993:
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7762:
7761:
7754:
7747:
7739:
7733:
7732:
7721:
7710:
7702:
7697:
7689:
7688:External links
7686:
7685:
7684:
7678:
7672:
7666:
7659:
7658:
7654:
7653:
7628:
7612:
7574:
7573:
7569:
7568:
7562:
7551:
7532:
7526:
7513:
7506:
7493:
7487:
7474:
7455:978-0521809269
7454:
7440:Horowitz, Paul
7435:
7434:
7429:
7426:
7424:
7423:
7371:
7344:(14): 143001.
7324:
7267:
7257:
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7175:
7143:
7117:
7085:
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6916:
6902:
6876:
6849:
6823:
6802:
6770:
6735:
6703:
6673:
6666:
6654:Streetman, Ben
6642:
6611:
6604:
6586:
6579:
6561:Horowitz, Paul
6552:
6495:
6476:
6447:
6433:
6426:
6400:
6393:
6360:
6353:
6333:
6326:
6306:
6281:
6269:
6243:
6204:
6197:
6171:
6123:
6116:
6110:. p. 10.
6092:
6061:
6034:
6020:
5990:
5961:
5925:
5898:(8): 827â828.
5882:
5875:
5855:
5828:
5815:
5788:
5763:
5712:
5681:
5653:
5596:
5589:
5571:
5564:
5534:
5505:
5483:
5476:
5452:
5446:978-3540342588
5445:
5427:
5421:978-1566771931
5420:
5394:
5355:
5324:
5293:
5274:
5232:
5201:
5194:
5170:
5145:
5138:
5108:
5101:
5083:
5068:
5047:
5026:
5000:
4972:
4952:
4946:978-0313398636
4945:
4925:
4895:
4886:
4860:
4834:
4808:
4774:
4765:
4752:
4743:
4731:
4696:
4664:
4642:
4624:
4605:
4586:
4579:
4573:. p. 14.
4555:
4546:|journal=
4516:
4484:
4436:
4418:
4411:"transistor".
4403:
4396:
4378:
4363:
4345:
4333:
4312:
4298:
4284:
4270:
4252:
4229:
4212:
4205:
4185:
4178:
4156:
4125:
4118:
4100:
4093:
4063:
4032:
3993:
3976:Nobelprize.org
3963:
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3825:
3820:
3815:
3810:
3804:
3803:
3802:
3786:
3783:
3766:
3763:
3681:-manufactured
3653:
3650:
3642:Schottky diode
3638:AlâSi junction
3615:(HEMT), has a
3599:
3598:
3595:
3592:
3585:
3577:electric field
3509:
3508:
3505:
3502:
3499:
3496:
3492:
3491:
3488:
3485:
3482:
3479:
3475:
3474:
3471:
3468:
3465:
3462:
3458:
3457:
3454:
3451:
3448:
3445:
3441:
3440:
3429:
3426:Hole mobility
3424:
3419:
3414:
3411:Semiconductor
3402:
3399:
3396:
3395:
3354:
3352:
3345:
3339:
3336:
3310:
3307:
3281:second-sourced
3272:
3269:
3266:
3265:
3260:
3257:
3254:
3243:
3239:
3238:
3233:
3230:
3227:
3213:
3209:
3208:
3203:
3200:
3197:
3190:
3186:
3185:
3180:
3177:
3174:
3171:
3167:
3166:
3161:
3156:
3151:
3144:
3140:
3139:
3134:
3131:
3128:
3114:
3110:
3109:
3104:
3101:
3098:
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3077:
3071:
3067:
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3039:
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3034:
3032:
3029:
3026:
3019:
3015:
3014:
3012:
3009:
3006:
2999:
2995:
2994:
2992:
2989:
2986:
2979:
2975:
2974:
2972:
2969:
2966:
2956:
2952:
2951:
2948:
2945:
2942:
2941:Type and usage
2939:
2926:
2914:
2911:
2908:
2907:
2904:
2900:
2899:
2896:
2892:
2891:
2888:
2884:
2883:
2880:
2876:
2875:
2872:
2868:
2867:
2864:
2860:
2859:
2856:
2843:
2799:In Japan, the
2796:
2793:
2790:
2789:
2786:
2782:
2781:
2775:
2771:
2770:
2767:
2763:
2762:
2759:
2725:
2722:
2717:
2714:
2713:
2712:
2709:
2706:
2703:
2697:
2694:
2691:
2688:
2682:
2676:
2670:
2664:
2663:
2662:
2640:
2634:
2629:
2618:
2612:
2606:
2588:
2582:
2572:
2571:
2570:
2567:stochastically
2552:
2542:
2532:
2526:
2512:
2489:
2484:
2479:
2467:
2466:
2465:
2464:
2463:
2456:
2450:
2440:
2431:
2426:
2420:
2414:
2408:
2405:
2404:
2403:
2399:
2395:
2383:
2377:
2370:
2364:
2363:
2362:
2361:
2360:
2348:
2339:
2325:
2324:
2323:
2320:
2317:
2305:
2304:
2303:
2300:radiofrequency
2287:
2281:
2239:
2236:
2195:
2192:
2171:than the FET.
2156:
2149:
2099:Main article:
2096:
2093:
2057:Main article:
2054:
2051:
2042:depletion-mode
2031:reverse biased
2020:depletion-mode
1960:
1951:
1944:
1937:
1929:
1922:
1915:
1907:region to the
1853:
1846:
1823:Main article:
1820:
1817:
1769:
1766:
1758:
1757:
1753:
1742:
1727:
1715:
1707:
1688:
1681:
1670:
1655:
1648:
1634:
1633:
1632:
1618:
1608:
1599:The compounds
1597:
1563:
1537:MOSFET symbols
1536:
1535:
1532:
1531:
1529:
1526:
1522:
1521:
1518:
1511:
1504:
1496:
1495:
1492:
1485:
1478:
1468:
1455:
1454:
1451:
1450:
1448:
1445:
1443:
1439:
1438:
1435:
1428:
1425:
1417:
1416:
1413:
1406:
1403:
1393:
1390:
1389:
1304:
1302:
1295:
1289:
1288:Classification
1286:
1284:
1281:
1280:
1279:
1272:
1261:
1254:
1234:
1231:
1230:
1229:
1226:
1219:
1216:
1213:
1210:
1203:
1200:
1199:and depletion.
1188:
1185:
1176:
1173:
1135:
1128:
1121:
1102:
1099:
1043:
1040:
1035:
1028:
1027:
1005:
1004:
955:
952:
929:microprocessor
907:), along with
837:IEEE Milestone
825:
822:
738:Mohamed Atalla
729:
707:Main article:
704:
701:
697:electric field
649:in the 1940s.
619:Main article:
616:
613:
556:Herbert Mataré
497:effort during
481:subsidiary in
465:Herbert Mataré
438:surface states
412:John R. Pierce
410:was coined by
404:semiconductors
360:Herbert Mataré
299:
296:
267:William Eccles
222:Main article:
219:
216:
26:
18:Transistorized
9:
6:
4:
3:
2:
9299:
9288:
9285:
9283:
9280:
9278:
9275:
9273:
9270:
9268:
9265:
9263:
9260:
9258:
9255:
9253:
9250:
9248:
9245:
9243:
9240:
9239:
9237:
9222:
9219:
9217:
9216:Metastability
9214:
9213:
9211:
9209:Design issues
9207:
9201:
9198:
9194:
9191:
9189:
9186:
9185:
9184:
9183:Digital video
9181:
9179:
9176:
9174:
9171:
9167:
9164:
9163:
9162:
9161:Digital audio
9159:
9155:
9152:
9151:
9150:
9147:
9146:
9144:
9140:
9132:
9129:
9128:
9127:
9124:
9122:
9119:
9117:
9114:
9112:
9109:
9105:
9102:
9100:
9097:
9096:
9095:
9092:
9090:
9087:
9083:
9080:
9078:
9075:
9074:
9073:
9070:
9068:
9065:
9064:
9062:
9060:
9056:
9050:
9047:
9045:
9042:
9040:
9037:
9033:
9030:
9029:
9028:
9025:
9023:
9020:
9018:
9015:
9013:
9010:
9008:
9005:
9003:
9000:
8999:
8997:
8993:
8986:
8983:
8980:
8977:
8974:
8971:
8968:
8965:
8962:
8959:
8956:
8953:
8950:
8947:
8944:
8941:
8938:
8935:
8933:
8930:
8927:
8924:
8921:
8918:
8915:
8912:
8910:
8907:
8904:
8901:
8898:
8895:
8893:
8890:
8888:
8885:
8883:
8880:
8878:
8875:
8873:
8870:
8868:
8865:
8863:
8860:
8858:
8855:
8853:
8850:
8848:
8845:
8843:
8840:
8838:
8835:
8833:
8830:
8829:
8827:
8825:
8821:
8817:
8810:
8805:
8803:
8798:
8796:
8791:
8790:
8787:
8773:
8772:mercury relay
8770:
8768:
8765:
8764:
8763:
8760:
8758:
8755:
8753:
8750:
8748:
8745:
8743:
8740:
8736:
8733:
8732:
8731:
8728:
8727:
8725:
8723:
8719:
8711:
8708:
8707:
8706:
8703:
8701:
8698:
8696:
8693:
8691:
8688:
8686:
8683:
8681:
8678:
8674:
8671:
8669:
8666:
8665:
8664:
8661:
8659:
8656:
8654:
8651:
8649:
8646:
8642:
8639:
8637:
8634:
8632:
8629:
8628:
8626:
8625:
8623:
8619:
8613:
8610:
8608:
8605:
8601:
8598:
8597:
8596:
8595:Potentiometer
8593:
8592:
8590:
8586:
8580:
8577:
8575:
8572:
8570:
8567:
8565:
8562:
8560:
8557:
8555:
8552:
8550:
8547:
8545:
8542:
8540:
8537:
8535:
8532:
8530:
8527:
8526:
8524:
8522:
8518:
8512:
8511:Williams tube
8509:
8507:
8504:
8502:
8499:
8497:
8494:
8492:
8489:
8487:
8484:
8482:
8479:
8477:
8474:
8472:
8469:
8467:
8464:
8463:
8461:
8459:
8455:
8449:
8446:
8443:
8440:
8438:
8435:
8433:
8430:
8428:
8425:
8422:
8419:
8417:
8414:
8411:
8408:
8406:
8403:
8400:
8397:
8396:
8394:
8391:
8387:
8383:
8377:
8374:
8372:
8369:
8367:
8364:
8362:
8359:
8357:
8354:
8351:
8348:
8346:
8343:
8341:
8338:
8336:
8333:
8331:
8330:Fleming valve
8328:
8326:
8323:
8321:
8318:
8316:
8313:
8311:
8308:
8306:
8303:
8301:
8298:
8297:
8295:
8293:
8289:
8283:
8280:
8278:
8275:
8273:
8270:
8268:
8265:
8263:
8260:
8258:
8255:
8253:
8250:
8248:
8245:
8243:
8240:
8238:
8235:
8233:
8230:
8229:
8227:
8225:
8221:
8211:
8208:
8206:
8203:
8201:
8198:
8196:
8193:
8190:
8187:
8184:
8181:
8179:
8176:
8173:
8170:
8168:
8165:
8163:
8160:
8158:
8157:Photodetector
8155:
8153:
8150:
8147:
8144:
8142:
8139:
8136:
8133:
8131:
8128:
8126:
8125:Memtransistor
8123:
8121:
8118:
8116:
8113:
8110:
8107:
8105:
8102:
8099:
8096:
8094:
8091:
8089:
8086:
8084:
8081:
8079:
8076:
8075:
8073:
8067:
8061:
8058:
8056:
8053:
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8046:
8043:
8041:
8038:
8035:
8032:
8029:
8026:
8023:
8020:
8018:
8015:
8012:
8009:
8007:
8004:
8003:
8001:
7999:
7995:
7988:
7985:
7983:
7980:
7977:
7974:
7971:
7968:
7966:
7963:
7961:
7958:
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7951:
7950:
7948:
7945:
7941:
7938:
7936:
7933:
7932:
7930:
7927:
7925:
7922:
7920:
7917:
7914:
7911:
7910:
7908:
7906:
7900:
7894:
7891:
7889:
7886:
7883:
7880:
7878:
7875:
7872:
7869:
7866:
7863:
7861:
7858:
7856:
7853:
7850:
7847:
7844:
7841:
7838:
7835:
7833:
7830:
7827:
7824:
7821:
7818:
7816:
7813:
7811:
7808:
7806:
7803:
7801:
7798:
7796:
7793:
7792:
7790:
7788:
7782:
7779:
7777:
7774:Semiconductor
7771:
7767:
7760:
7755:
7753:
7748:
7746:
7741:
7740:
7737:
7731:
7730:
7725:
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7711:
7708:
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7682:
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7656:
7655:
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7638:
7634:
7629:
7625:
7621:
7617:
7613:
7609:
7605:
7601:
7597:
7593:
7590:(11): 52â57.
7589:
7585:
7584:IEEE Spectrum
7581:
7576:
7575:
7571:
7570:
7566:
7563:
7560:
7555:
7552:
7549:
7544:
7540:
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7490:
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7437:
7436:
7432:
7431:
7419:
7415:
7411:
7407:
7403:
7399:
7395:
7391:
7388:(3): 156â61.
7387:
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7375:
7367:
7363:
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7347:
7343:
7339:
7335:
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7258:9780387339139
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6618:
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6607:
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6597:
6590:
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6576:
6572:
6571:
6566:
6565:Winfield Hill
6562:
6556:
6548:
6544:
6540:
6536:
6531:
6526:
6522:
6518:
6514:
6510:
6506:
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6350:
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6319:
6318:
6310:
6295:
6294:www.apple.com
6291:
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6217:
6211:
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6198:9789814613750
6194:
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6119:
6117:9780130470652
6113:
6109:
6105:
6104:
6096:
6080:
6079:
6074:
6068:
6066:
6050:
6049:
6044:
6043:"Dawon Kahng"
6038:
6030:
6024:
6008:
6004:
6000:
5994:
5978:
5971:
5965:
5949:
5945:
5941:
5940:
5935:
5929:
5921:
5917:
5913:
5909:
5905:
5901:
5897:
5893:
5886:
5878:
5876:9780387717517
5872:
5868:
5867:
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5751:
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5549:
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5509:
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5497:
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5469:
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5456:
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5438:
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5423:
5417:
5413:
5409:
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5390:
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5195:9780470508923
5191:
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5123:
5119:
5112:
5104:
5098:
5094:
5087:
5079:
5072:
5065:
5064:0-07-145951-0
5061:
5057:
5051:
5044:
5043:3-540-40546-1
5040:
5036:
5030:
5022:
5018:
5017:IEEE Spectrum
5014:
5010:
5004:
4989:
4988:
4983:
4976:
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4707:
4700:
4689:September 17,
4684:
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4660:
4656:
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4580:9783527340538
4576:
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4517:9781139643771
4513:
4509:
4505:
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4470:11577/3257397
4466:
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4224:
4216:
4208:
4206:9780262132480
4202:
4199:. MIT Press.
4198:
4197:
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4181:
4179:9783540342588
4175:
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3806:
3805:
3800:
3794:
3789:
3782:
3780:
3776:
3772:
3762:
3760:
3759:chip-on-board
3756:
3752:
3747:
3743:
3739:
3737:
3733:
3727:
3725:
3721:
3717:
3713:
3709:
3708:surface-mount
3705:
3701:
3700:
3695:
3690:
3684:
3680:
3676:
3668:
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3659:
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3608:
3604:
3596:
3593:
3590:
3586:
3583:
3582:
3581:
3578:
3574:
3573:
3572:hole mobility
3568:
3567:
3561:
3557:
3555:
3550:
3545:
3541:
3539:
3535:
3532:
3528:
3524:
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3371:
3367:
3361:
3360:
3355:This section
3353:
3349:
3344:
3343:
3335:
3332:
3328:
3327:surface-mount
3323:
3321:
3317:
3306:
3302:
3300:
3295:
3293:
3289:
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3278:
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2600:
2596:
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2576:
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2568:
2564:
2560:
2559:record player
2556:
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2434:
2432:
2430:
2427:
2424:
2421:
2418:
2415:
2412:
2409:
2406:
2393:
2390:
2389:
2387:
2384:
2381:
2378:
2375:
2371:
2368:
2365:
2358:
2355:
2354:
2352:
2349:
2347:
2344:(FGMOS), for
2343:
2340:
2337:
2333:
2329:
2326:
2321:
2318:
2315:
2312:
2311:
2309:
2306:
2301:
2297:
2294:
2293:
2291:
2288:
2285:
2282:
2279:
2276:
2275:
2273:
2270:
2269:
2267:
2264:
2263:
2260:
2253:
2249:
2244:
2235:
2233:
2229:
2225:
2221:
2217:
2216:power MOSFETs
2213:
2209:
2205:
2201:
2191:
2184:
2180:
2178:
2172:
2170:
2166:
2162:
2155:
2148:
2143:
2140:
2136:
2131:
2127:
2123:
2119:
2114:
2112:
2111:pân junctions
2108:
2102:
2092:
2090:
2086:
2082:
2078:
2074:
2070:
2066:
2060:
2050:
2047:
2043:
2038:
2036:
2032:
2028:
2023:
2021:
2017:
2013:
2009:
2005:
2001:
1997:
1993:
1989:
1985:
1980:
1978:
1973:
1971:
1967:
1954:
1947:
1940:
1910:
1906:
1901:
1899:
1895:
1891:
1887:
1883:
1879:
1878:p-channel FET
1875:
1874:n-channel FET
1871:
1867:
1866:
1842:
1837:
1832:
1826:
1816:
1814:
1811:
1807:
1803:
1799:
1795:
1791:
1787:
1783:
1779:
1775:
1765:
1763:
1754:
1751:
1745:
1741:
1736:
1730:
1726:
1721:
1718:
1714:
1708:
1705:
1701:
1697:
1696:surface mount
1693:
1689:
1686:
1682:
1679:
1673:
1669:
1664:
1660:
1656:
1653:
1649:
1646:
1642:
1638:
1635:
1630:
1626:
1623:
1619:
1616:
1613:
1609:
1606:
1602:
1598:
1595:
1591:
1587:
1583:
1579:
1575:
1571:
1570:
1568:
1564:
1561:
1557:
1553:
1549:
1545:
1544:
1543:
1530:
1527:
1523:
1519:
1516:
1512:
1509:
1505:
1502:
1498:
1497:
1493:
1490:
1486:
1483:
1479:
1476:
1472:
1471:
1463:
1449:
1446:
1444:
1441:
1440:
1436:
1433:
1429:
1426:
1423:
1419:
1418:
1414:
1411:
1407:
1404:
1401:
1397:
1396:
1386:
1383:
1375:
1372:December 2020
1364:
1361:
1357:
1354:
1350:
1347:
1343:
1340:
1336:
1333: â
1332:
1328:
1327:Find sources:
1321:
1317:
1311:
1310:
1305:This section
1303:
1299:
1294:
1293:
1277:
1273:
1270:
1266:
1262:
1259:
1255:
1252:
1248:
1244:
1240:
1239:
1238:
1227:
1224:
1220:
1217:
1214:
1211:
1208:
1204:
1201:
1198:
1194:
1193:
1192:
1184:
1182:
1172:
1170:
1165:
1163:
1159:
1155:
1151:
1147:
1146:mobile phones
1142:
1139:
1134:
1127:
1120:
1116:
1107:
1098:
1096:
1091:
1089:
1085:
1079:
1075:
1073:
1069:
1065:
1061:
1057:
1048:
1039:
1034:
1025:
1021:
1017:
1013:
1012:
1007:
1006:
1002:
998:
994:
990:
989:
984:
983:
982:
979:
977:
973:
969:
960:
951:
949:
945:
941:
937:
932:
930:
926:
922:
918:
914:
910:
906:
902:
898:
894:
890:
889:
883:
881:
877:
876:mass-produced
873:
869:
865:
861:
857:
853:
849:
844:
842:
838:
833:
831:
821:
819:
815:
811:
807:
803:
799:
795:
791:
787:
783:
779:
775:
771:
770:Frank Wanlass
767:
766:Chih-Tang Sah
763:
759:
754:
752:
748:
743:
739:
734:
732:
724:
715:
710:
700:
698:
694:
693:surface state
690:
686:
682:
678:
673:
669:
667:
663:
659:
655:
650:
648:
644:
640:
636:
632:
628:
622:
612:
610:
606:
602:
597:
595:
590:
585:
583:
579:
574:
571:
567:
563:
562:
557:
553:
548:
546:
540:
538:
534:
526:
523:developed by
522:
517:
515:
514:Morgan Sparks
511:
507:
502:
500:
496:
492:
488:
484:
480:
476:
475:
470:
466:
461:
459:
455:
454:point-contact
451:
447:
443:
442:dangling bond
439:
434:
432:
428:
423:
419:
418:
413:
409:
405:
401:
397:
393:
389:
385:
381:
377:
368:
361:
357:
350:
345:
338:
334:
330:
326:
322:
318:
314:
309:
305:
295:
293:
289:
288:semiconductor
284:
280:
276:
272:
268:
265:
261:
257:
253:
249:
246:
238:
234:
230:
225:
215:
213:
209:
205:
201:
197:
193:
189:
184:
182:
178:
174:
170:
166:
162:
158:
154:
150:
146:
142:
138:
135:
131:
129:
125:
120:
116:
112:
108:
104:
100:
96:
92:
88:
84:
76:
72:
68:
62:
58:
54:
50:
46:
41:
37:
33:
19:
9142:Applications
8831:
8529:Cold cathode
8496:Storage tube
8386:Vacuum tubes
8335:Neutron tube
8310:Beam tetrode
8292:Vacuum tubes
7902:
7877:Power MOSFET
7794:
7727:
7713:
7705:
7643:(6): 80â84.
7640:
7636:
7624:the original
7619:
7608:the original
7587:
7583:
7564:
7553:
7534:
7517:
7498:Crystal Fire
7497:
7478:
7444:
7385:
7381:
7374:
7341:
7337:
7333:
7327:
7284:
7280:
7270:
7262:
7247:
7212:
7204:
7192:. Retrieved
7178:
7166:. Retrieved
7146:
7134:. Retrieved
7120:
7108:. Retrieved
7088:
7076:. Retrieved
7064:
7052:
7040:. Retrieved
7026:
7017:
7007:
6996:
6987:
6976:
6967:
6956:
6947:
6933:
6919:
6905:
6893:. Retrieved
6879:
6867:. Retrieved
6852:
6840:. Retrieved
6836:the original
6826:
6810:
6805:
6797:
6792:February 17,
6790:. Retrieved
6786:
6773:
6756:
6738:
6726:. Retrieved
6719:the original
6706:
6694:. Retrieved
6688:
6676:
6657:
6633:. Retrieved
6626:
6595:
6589:
6569:
6555:
6512:
6508:
6498:
6479:
6463:
6450:
6436:
6409:
6403:
6383:
6343:
6336:
6320:. Springer.
6316:
6309:
6297:. Retrieved
6293:
6284:
6272:
6260:. Retrieved
6255:
6246:
6234:. Retrieved
6219:
6184:
6174:
6166:
6141:(1): 26â36.
6138:
6132:
6126:
6102:
6095:
6083:. Retrieved
6076:
6052:. Retrieved
6046:
6037:
6023:
6011:. Retrieved
6002:
5993:
5981:. Retrieved
5964:
5952:. Retrieved
5948:the original
5937:
5928:
5895:
5891:
5885:
5865:
5858:
5846:. Retrieved
5840:
5831:
5823:
5818:
5806:. Retrieved
5800:
5791:
5772:
5766:
5728:(2): 48â59.
5725:
5721:
5715:
5703:. Retrieved
5696:
5672:. Retrieved
5665:
5656:
5645:the original
5619:(1): 43â48.
5616:
5612:
5599:
5580:
5574:
5547:
5537:
5525:. Retrieved
5517:
5508:
5499:
5486:
5462:
5455:
5436:
5430:
5407:
5397:
5372:
5368:
5358:
5341:
5337:
5327:
5310:
5306:
5296:
5277:
5252:
5248:
5218:
5214:
5204:
5180:
5173:
5154:
5148:
5121:
5111:
5092:
5086:
5071:
5055:
5050:
5034:
5029:
5021:the original
5016:
5011:(May 2004).
5003:
4991:. Retrieved
4985:
4975:
4965:
4955:
4935:
4928:
4916:. Retrieved
4912:the original
4907:
4898:
4889:
4877:. Retrieved
4863:
4851:. Retrieved
4837:
4825:. Retrieved
4811:
4799:. Retrieved
4790:
4784:
4777:
4768:
4760:
4759:P. Mallery,
4755:
4746:
4738:
4734:
4709:
4705:
4699:
4687:. Retrieved
4676:
4667:
4654:
4645:
4627:
4608:
4589:
4565:
4558:
4530:the original
4494:
4487:
4455:(4): 33â37.
4452:
4448:
4421:
4412:
4406:
4387:
4381:
4372:
4366:
4348:
4336:
4328:the original
4301:
4287:
4273:
4247:
4232:
4222:
4215:
4195:
4188:
4165:
4159:
4142:
4138:
4128:
4109:
4103:
4076:
4066:
4049:
4045:
4035:
4010:
4006:
3996:
3984:. Retrieved
3975:
3966:
3954:. Retrieved
3945:
3936:
3927:
3900:. Retrieved
3896:
3893:"Transistor"
3887:
3768:
3758:
3754:
3748:
3744:
3740:
3735:
3728:
3719:
3711:
3707:
3703:
3699:through-hole
3697:
3691:
3688:
3662:Chip carrier
3637:
3636:
3629:
3610:
3600:
3570:
3564:
3562:
3558:
3548:
3546:
3542:
3537:
3530:
3522:
3512:
3384:
3375:
3364:Please help
3359:verification
3356:
3338:Construction
3324:
3312:
3303:
3296:
3274:
3222:transistor (
2923:
2919:Pro Electron
2916:
2840:
2836:
2832:
2828:
2824:
2820:
2816:
2812:
2808:
2804:
2798:
2737:
2733:
2727:
2719:
2654:
2650:
2602:
2598:
2594:
2522:
2351:Power MOSFET
2197:
2189:
2173:
2153:
2146:
2144:
2125:
2121:
2117:
2115:
2104:
2062:
2045:
2041:
2039:
2024:
2019:
1995:
1991:
1984:junction FET
1983:
1981:
1974:
1949:
1942:
1935:
1908:
1904:
1902:
1897:
1893:
1889:
1885:
1881:
1877:
1873:
1869:
1863:
1861:
1812:
1809:
1805:
1801:
1797:
1793:
1789:
1785:
1771:
1761:
1759:
1743:
1739:
1728:
1724:
1716:
1712:
1692:through-hole
1685:high voltage
1671:
1667:
1652:power rating
1541:
1378:
1369:
1359:
1352:
1345:
1338:
1331:"Transistor"
1326:
1314:Please help
1309:verification
1306:
1236:
1223:microphonics
1190:
1178:
1166:
1143:
1140:
1132:
1125:
1118:
1112:
1094:
1092:
1087:
1083:
1080:
1076:
1053:
1032:
1029:
1023:
1019:
1015:
1009:
1000:
996:
992:
986:
980:
965:
946:and write a
933:
904:
900:
896:
886:
884:
845:
834:
827:
798:silicon-gate
786:Donald Klein
755:
751:high-density
735:
720:
685:mass-produce
674:
670:
651:
624:
598:
586:
581:
575:
566:Regency TR-1
560:
549:
541:
518:
503:
499:World War II
479:Westinghouse
472:
462:
435:
415:
407:
376:John Bardeen
373:
317:John Bardeen
273:. Physicist
242:
185:
149:John Bardeen
132:
82:
80:
36:
9242:Transistors
8872:Memory cell
8695:Transformer
8437:Sutton tube
8277:Charge pump
8130:Memory cell
8060:Zener diode
8022:Laser diode
7905:transistors
7787:transistors
7717:. From the
7572:Periodicals
7186:. Qsl.net.
6299:October 20,
6262:January 21,
5550:: 583â596.
5527:January 16,
5375:: 131â136.
4993:October 14,
4918:December 5,
4145:: 131â136.
4079:: 583â596.
3986:December 7,
3902:January 12,
3828:Moore's law
3685:transistors
3507:150 to 200
3490:150 to 200
3473:150 to 200
3271:Proprietary
3021:Germanium,
2981:Germanium,
2659:oscillators
2206:as well as
2089:electronics
1772:Convenient
1603:(1966) and
1546:Structure:
1265:cosmic rays
1233:Limitations
1150:televisions
1068:logic gates
936:mechatronic
901:microchips,
868:digital age
860:smartphones
852:electronics
830:electronics
802:double-gate
742:Dawon Kahng
723:Carl Frosch
666:Ian M. Ross
609:Gordon Teal
510:Gordon Teal
406:. The term
283:solid-state
252:vacuum tube
204:vacuum tube
177:calculators
128:electronics
103:electronics
9236:Categories
9221:Runt pulse
9193:television
8887:Logic gate
8832:Transistor
8824:Components
8767:reed relay
8757:Parametron
8690:Thermistor
8668:resettable
8627:Connector
8588:Adjustable
8564:Nixie tube
8534:Crossatron
8501:Trochotron
8476:Iconoscope
8471:Charactron
8448:X-ray tube
8320:Compactron
8300:Acorn tube
8257:Buckâboost
8178:Solaristor
8040:Photodiode
8017:Gunn diode
8013:(CLD, CRD)
7795:Transistor
6819:0792390962
6787:www.st.com
6696:August 10,
5492:Atalla, M.
5344:(9): 547.
5313:(9): 547.
5283:US2802760A
5221:(9): 547.
4614:US 2673948
4595:FR 1010427
4052:(9): 547.
3897:Britannica
3880:References
3777:and other
3757:(DCA) and
3732:heat sinks
3656:See also:
3560:behavior.
3554:sensistors
3456:70 to 100
3005:transistor
2965:transistor
2950:Reference
2947:Equivalent
2702:transistor
2685:Solaristor
2547:, used in
2445:(EOSFET),
2284:n-type MOS
2278:p-type MOS
2130:amplifiers
2069:fabricated
1829:See also:
1574:metalloids
1528:MOSFET dep
1525:MOSFET enh
1520:N-channel
1494:P-channel
1437:N-channel
1415:P-channel
1342:newspapers
1276:tube sound
1187:Advantages
1084:saturation
925:logic gate
919:and other
917:capacitors
903:or simply
824:Importance
814:multi-gate
643:Oskar Heil
504:The first
444:, and the
408:transistor
292:Oskar Heil
245:thermionic
83:transistor
9267:Bell Labs
9077:Placement
8867:Flip-flop
8847:Capacitor
8730:Capacitor
8574:Trigatron
8569:Thyratron
8559:Neon lamp
8486:Monoscope
8366:Phototube
8350:Pentagrid
8315:Barretter
8200:Trancitor
8195:Thyristor
8120:Memristor
8045:PIN diode
7822:(ChemFET)
7657:Databooks
7649:0161-7370
7559:(archive)
7548:(archive)
7464:cite book
7418:205446925
7366:109292175
6539:0036-8075
6189:CRC Press
6155:0894-6507
6013:August 3,
5920:0038-1101
5750:0036-8733
5633:0018-9219
5496:Kahng, D.
5389:0022-3697
5269:1064-8208
5255:(3): 29.
4879:April 10,
4853:April 10,
4827:April 10,
4548:ignored (
4538:cite book
4526:108955928
4027:1064-8208
4013:(3): 29.
3956:March 25,
3873:Trancitor
3736:microwave
3652:Packaging
3646:parasitic
3538:elemental
3525:material
3515:germanium
3434:junction
3413:material
3378:June 2021
3322:2SJ176).
3263:Datasheet
3247:microwave
3236:Datasheet
3220:microwave
3206:Datasheet
3183:Datasheet
3164:Datasheet
3137:Datasheet
3116:Silicon,
3107:Datasheet
3088:Datasheet
2959:Germanium
2455:(DNAFET).
2447:neurochip
2419:(FREDFET)
2310:(MuGFET)
2135:electrons
2126:collector
2004:pân diode
1977:bandwidth
1898:substrate
1768:Mnemonics
1704:Packaging
1663:microwave
1586:amorphous
1578:germanium
1550:(IGFET),
1267:(special
997:collector
972:amplifier
913:resistors
848:computers
820:in 1989.
782:Simon Sze
721:In 1955,
446:germanium
396:germanium
388:Bell Labs
329:Bell Labs
264:physicist
260:telephony
212:Gyrotrons
192:germanium
181:computers
161:Bell Labs
134:Physicist
111:terminals
8842:Inductor
8837:Resistor
8752:Inductor
8722:Reactive
8700:Varistor
8680:Resistor
8658:Antifuse
8544:Ignitron
8539:Dekatron
8427:Klystron
8416:Gyrotron
8345:Nuvistor
8262:Split-pi
8148:(MOS IC)
8115:Memistor
7873:(MuGFET)
7867:(MOSFET)
7839:(FinFET)
7604:34953819
7410:21297625
7319:24018904
7287:: 2609.
7194:June 30,
7188:Archived
7159:Archived
7136:June 30,
7130:Archived
7110:June 30,
7101:Archived
7078:June 30,
7069:Archived
7036:Archived
6889:Archived
6869:June 30,
6863:Archived
6842:June 30,
6728:June 30,
6656:(1992).
6635:July 28,
6567:(1989).
6547:30523104
6489:Archived
6468:Archived
6236:July 21,
6230:Archived
6163:25283342
6085:July 20,
6054:June 27,
6007:Archived
6005:. IEEE.
5848:July 22,
5758:24923169
5705:July 20,
5674:July 18,
5641:29105721
4873:Archived
4847:Archived
4821:Archived
4795:Archived
4791:Die Welt
4726:51652314
4683:Archived
4659:Archived
4637:Archived
4479:38161381
4431:Archived
4358:Archived
4241:Archived
3980:Archived
3950:Archived
3813:Band gap
3785:See also
3630:Maximum
3285:Motorola
2163:and the
2124:, and a
2107:carriers
1957:, where
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858:such as
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8549:Krytron
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8210:Varicap
8191:(3D IC)
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7346:Bibcode
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6509:Science
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