1263:
248:
173:
573:
53:
660:
1603:. This process can be further modified to reduce dislocation densities. First, an ion beam is applied to the growth surface in order to create nanoscale roughness. Then, the surface is polished. This process takes place in a vacuum. Polishing methods typically employ a liquid electrolyte and UV irradiation to enable mechanical removal of a thin oxide layer from the wafer. More recent methods have been developed that utilize solid-state
44:
818:
972:
663:
1381:. The AN/TPQ-53 radar system was designed to detect, classify, track, and locate enemy indirect fire systems, as well as unmanned aerial systems. The AN/TPQ-53 radar system provided enhanced performance, greater mobility, increased reliability and supportability, lower life-cycle cost, and reduced crew size compared to the AN/TPQ-36 and the AN/TPQ-37 systems.
665:
1286:(HEMT) have been offered commercially since 2006, and have found immediate use in various wireless infrastructure applications due to their high efficiency and high voltage operation. A second generation of devices with shorter gate lengths will address higher-frequency telecom and aerospace applications.
1200:
GaN power ICs monolithically integrate a GaN FET, GaN-based drive circuitry and circuit protection into a single surface-mount device. Integration means that the gate-drive loop has essentially zero impedance, which further improves efficiency by virtually eliminating FET turn-off losses. Academic
1196:
by manufacturers. This allows the FETs to maintain costs similar to silicon power MOSFETs but with the superior electrical performance of GaN. Another seemingly viable solution for realizing enhancement-mode GaN-channel HFETs is to employ a lattice-matched quaternary AlInGaN layer of acceptably low
1923:
Cite journal | last1 = Di Carlo | first1 = A. | doi = 10.1002/1521-396X(200101)183:1<81::AID-PSSA81>3.0.CO;2-N | title = Tuning
Optical Properties of GaN-Based Nanostructures by Charge Screening | journal = Physica Status Solidi A | volume = 183 | issue = 1 | pages = 81–85 | year = 2001
1191:
GaN transistors became generally available. Only n-channel transistors were available. These devices were designed to replace power MOSFETs in applications where switching speed or power conversion efficiency is critical. These transistors are built by growing a thin layer of GaN on top of a
1095:
and room-temperature stimulated emission (essential for laser action). This has led to the commercialization of high-performance blue LEDs and long-lifetime violet laser diodes, and to the development of nitride-based devices such as UV detectors and high-speed
3395:
2646:
Rahbardar
Mojaver, Hassan; Gosselin, Jean-Lou; Valizadeh, Pouya (27 June 2017). "Use of a bilayer lattice-matched AlInGaN barrier for improving the channel carrier confinement of enhancement-mode AlInGaN/GaN hetero-structure field-effect transistors".
1304:
The higher efficiency and high power density of integrated GaN power ICs allows them to reduce the size, weight and component count of applications including mobile and laptop chargers, consumer electronics, computing equipment and electric vehicles.
3169:
947:
devices. Due to high power density and voltage breakdown limits GaN is also emerging as a promising candidate for 5G cellular base station applications. Since the early 2020s, GaN power transistors have come into increasing use in
2244:
Wraback, M.; Shen, H.; Carrano, J.C.; Collins, C.J; Campbell, J.C.; Dupuis, R.D.; Schurman, M.J.; Ferguson, I.T. (2000). "Time-Resolved
Electroabsorption Measurement of the electron velocity-field characteristic in GaN".
1297:) transistors also offer advantages including lower loss in high power electronics, especially in automotive and electric car applications. Since 2008 these can be formed on a silicon substrate. High-voltage (800 V)
1278:
GaN transistors are suitable for high frequency, high voltage, high temperature and high-efficiency applications. GaN is efficient at transferring current, and this ultimately means that less energy is lost to heat.
1201:
studies into creating low-voltage GaN power ICs began at the Hong Kong
University of Science and Technology (HKUST) and the first devices were demonstrated in 2015. Commercial GaN power IC production began in 2018.
1175:
currently used. The large band gap means that the performance of GaN transistors is maintained up to higher temperatures (~400 °C) than silicon transistors (~150 °C) because it lessens the effects of
1871:
581:
1897:
Czelej, K. (2024). "Atomistic
Origins of Various Luminescent Centers and n-Type Conductivity in GaN: Exploring the Point Defects Induced by Cr, Mn, and O through an Ab Initio Thermodynamic Approach".
1132:(SiC). Group III nitride semiconductors are, in general, recognized as one of the most promising semiconductor families for fabricating optical devices in the visible short-wavelength and UV region.
1322:
devices (i.e. on / resistive when the gate-source voltage is zero). Several methods have been proposed to reach normally-off (or E-mode) operation, which is necessary for use in power electronics:
3111:
3165:
553:
3129:
3075:
2599:
1108:
High-brightness GaN light-emitting diodes (LEDs) completed the range of primary colors, and made possible applications such as daylight-visible full-color LED displays, white LEDs and blue
3234:
Zhao, Chao; Alfaraj, Nasir; Subedi, Ram
Chandra; Liang, Jian Wei; Alatawi, Abdullah A.; Alhamoud, Abdullah A.; Ebaid, Mohamed; Alias, Mohd Sharizal; Ng, Tien Khee; Ooi, Boon S. (2019).
1163:
power amplifiers (e.g., those used in high-speed wireless data transmission) and high-voltage switching devices for power grids. A potential mass-market application for GaN-based RF
2498:
Dora, Y.; Chakraborty, A.; McCarthy, L.; Keller, S.; Denbaars, S. P.; Mishra, U. K. (2006). "High
Breakdown Voltage Achieved on AlGaN/GaN HEMTs with Integrated Slant Field Plates".
1091:
GaN with a high crystalline quality can be obtained by depositing a buffer layer at low temperatures. Such high-quality GaN led to the discovery of p-type GaN, p–n junction blue/UV-
664:
3475:
Shenai-Khatkhate, D. V.; Goyette, R. J.; Dicarlo, R. L. Jr; Dripps, G. (2004). "Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors".
3147:
1404:
Multi
Mission Radar that was able to detect and track air craft and ballistic targets, while providing fire control guidance for missile interception or air defense artillery.
2463:
Morkoç, H.; Strite, S.; Gao, G. B.; Lin, M. E.; Sverdlov, B.; Burns, M. (1994). "Large-band-gap SiC, III–V nitride, and II–VI ZnSe-based semiconductor device technologies".
2830:
1213:
using PMOS and NMOS transistors was reported with gate lengths of 0.5 μm (gate widths of the PMOS and NMOS transistors were 500 μm and 50 μm, respectively).
2380:
Amano, H.; Asahi, T.; Akasaki, I. (1990). "Stimulated
Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer".
3093:
3393:, D'Evelyn, Mark Philip; Park, Dong-Sil & LeBoeuf, Steven Francis et al., "Gallium nitride crystal and method of making same", issued 2013-01-22
906:, high-power and high-frequency devices. For example, GaN is the substrate that makes violet (405 nm) laser diodes possible, without requiring nonlinear optical
666:
3050:
2423:
Akasaki, I.; Amano, H.; Sota, S.; Sakai, H.; Tanaka, T.; Koike, M. (1995). "Stimulated
Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device".
1177:
674:
4962:
4479:
4942:
4615:
4502:
2926:
4742:
4567:
3115:
2337:
Amano, H.; Sawaki, N.; Akasaki, I.; Toyoda, Y. (1986). "Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer".
1754:
Foster, Corey M.; Collazo, Ramon; Sitar, Zlatko; Ivanisevic, Albena (2013). "abstract NCSU study: Aqueous Stability of Ga- and N-Polar Gallium Nitride".
1719:
Harafuji, Kenji; Tsuchiya, Taku; Kawamura, Katsuyuki (2004). "Molecular dynamics simulation for evaluating melting point of wurtzite-type GaN crystal".
831:
2998:
4900:
4657:
3133:
4839:
4556:
4545:
3376:
3327:
3079:
688:
3436:"Liquid electrolyte-free electrochemical oxidation of GaN surface using a solid polymer electrolyte toward electrochemical mechanical polishing"
2560:
Asif Khan, M.; Kuznia, J. N.; Bhattarai, A. R.; Olson, D. T. (1993). "Metal semiconductor field effect transistor based on single crystal GaN".
2227:
2148:
1308:
GaN-based electronics (not pure GaN) have the potential to drastically cut energy consumption, not only in consumer applications but even for
297:
3553:
3151:
2943:
2050:"Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters"
3510:
2851:
These devices offer lower loss during power conversion and operational characteristics that surpass traditional silicon counterparts.
1370:
943:(GaAs) transistors, they make ideal power amplifiers at microwave frequencies. In addition, GaN offers promising characteristics for
2621:
1435:
1615:
GaN dust is an irritant to skin, eyes and lungs. The environment, health and safety aspects of gallium nitride sources (such as
3183:
Goldberger, J.; He, R.; Zhang, Y.; Lee, S.; Yan, H.; Choi, H. J.; Yang, P. (2003). "Single-crystal gallium nitride nanotubes".
1970:
1046:
3097:
1842:
1798:
1690:
522:
3341:
M. Shibata, T. Furuya, H. Sakaguchi, S. Kuma (1999). "Synthesis of gallium nitride by ammonia injection into gallium melt".
2838:
1358:
radar in 2010 utilizing GaN technology. In 2021 Thales put in operation more than 50,000 GaN Transmitters on radar systems.
899:
1152:
of GaN has made it an ideal candidate for high-power and high-temperature microwave applications, as evidenced by its high
826:
1412:
1345:
1326:
the implantation of fluorine ions under the gate (the negative charge of the F-ions favors the depletion of the channel)
3954:
3311:
3286:
2863:
1855:
1703:
1600:
1548:
1283:
1267:
1113:
262:
1180:
that are inherent to any semiconductor. The first gallium nitride metal semiconductor field-effect transistors (GaN
5252:
3166:"Saab to Supply Key Components in Support of the U.S. Marine Corps Ground/Air Task Oriented Radar (G/ATOR) Program"
838:
3546:
1497:
below 1000 °C, the powder must be made from something more reactive, usually in one of the following ways:
1332:
the integration of a cascaded pair constituted by a normally-on GaN transistor and a low voltage silicon MOSFET
5247:
2281:
1250:) with a band gap dependent on the ratio of In or Al to GaN allows the manufacture of light-emitting diodes (
5242:
2726:
2500:
1153:
609:
448:
205:
168:
3236:"III–nitride nanowires on unconventional substrates: From materials to optoelectronic device applications"
2972:
2708:
226:
130:
623:
5237:
4624:
4316:
3539:
2794:
1378:
1374:
984:
907:
887:
792:
784:
572:
3660:
1830:. Eds. Levinshtein M.E., Rumyantsev S.L., Shur M.S., John Wiley & Sons, Inc., New York, 2001, 1–30
939:
Because GaN transistors can operate at much higher temperatures and work at much higher voltages than
3409:
2224:
1814:
1247:
1085:
One of the earliest syntheses of gallium nitride was at the George Herbert Jones Laboratory in 1932.
796:
635:
3932:
3511:"Research Finds Gallium Nitride is Non-Toxic, Biocompatible – Holds Promise For Biomedical Implants"
619:
4366:
4210:
4127:
3576:
2088:
Wetzel, C.; Suski, T.; Ager, J.W. III; Fischer, S.; Meyer, B.K.; Grzegory, I.; Porowski, S. (1996)
1445:
1271:
243:
4028:
5093:
3875:
3868:
1384:
Lockheed Martin fielded other tactical operational radars with GaN technology in 2018, including
1097:
788:
2622:"GaN-on-silicon enablingGaN power electronics, but to capture less than 5%of LED making by 2020"
2173:
Terao, S.; Iwaya, M.; Nakamura, R.; Kamiyama, S.; Amano, H.; Akasaki, I. (2001). "Fracture of Al
2089:
4312:
3947:
3851:
3741:
1653:
1634:. Therefore, it may be used in the electrodes and electronics of implants in living organisms.
1596:
1473:
1298:
1239:
800:
123:
1489:
GaN crystals can be grown from a molten Na/Ga melt held under 100 atmospheres of pressure of N
1318:
Unlike silicon transistors that switch off due to power surges, GaN transistors are typically
720:
5193:
4197:
3827:
3720:
3644:
3613:
3608:
3370:
2109:"P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)"
1648:
595:
565:
505:
65:
3024:
2546:
1815:"Investigation of the Thermal Properties of Gallium Nitride Using the Three Omega Technique"
1262:
150:
5152:
5068:
4393:
4223:
3815:
3769:
3749:
3704:
3639:
3526:
3484:
3350:
3192:
3051:"Lockheed Martin Demonstrates Mature, Proven Radar Technology During U.S. Army's Sense-Off"
2884:
Meneghini, Matteo; Hilt, Oliver; Wuerfl, Joachim; Meneghesso, Gaudenzio (25 January 2017).
2656:
2569:
2509:
2472:
2432:
2389:
2346:
2254:
2190:
2120:
2092:, International conference on physics of semiconductors, Berlin (Germany), 21–26 July 1996.
2061:
2000:
1943:
1934:
Arakawa, Y. (2002). "Progress in GaN-based quantum dots for optoelectronics applications".
1728:
1604:
1544:
1024:
1020:
883:
879:
406:
214:
99:
28:
8:
4638:
4113:
3728:
3712:
3634:
1663:
1149:
980:
953:
944:
933:
89:
17:
3488:
3354:
3196:
2864:"Making the new silicon: Gallium nitride electronics could drastically cut energy usage"
2660:
2573:
2513:
2476:
2436:
2393:
2350:
2258:
2194:
2124:
2065:
2004:
1947:
1732:
1531:
Gallium nitride can also be synthesized by injecting ammonia gas into molten gallium at
1112:
devices. The first GaN-based high-brightness LEDs used a thin film of GaN deposited via
247:
172:
5103:
5078:
4955:
4800:
4721:
4353:
4349:
3803:
3798:
3618:
3321:
3216:
2744:
2525:
2405:
2362:
2206:
1576:
1434:, and Arexis EW. Saab also delivers major subsystems, assemblies and software for the
1419:
1362:
1309:
1141:
991:
and thermal conductivity. In its pure form it resists cracking and can be deposited in
914:
749:
3362:
2028:
5232:
5183:
5178:
5173:
5123:
5073:
5058:
4785:
4711:
4677:
4597:
4513:
4421:
4289:
4262:
4064:
3940:
3793:
3785:
3562:
3457:
3307:
3282:
3252:
3235:
3208:
2672:
2409:
2210:
1988:
1851:
1794:
1771:
1699:
1355:
1145:
1074:
956:
768:
741:
710:
442:
396:
2529:
2366:
1971:"Enhancement Mode Gallium Nitride (eGaN) FET Characteristics under Long Term Stress"
5157:
5088:
5083:
4895:
4890:
4874:
4869:
4780:
4619:
4610:
4498:
4493:
4475:
4470:
4411:
4329:
4232:
3895:
3679:
3599:
3496:
3492:
3447:
3390:
3358:
3257:
3247:
3220:
3200:
2907:
2897:
2664:
2577:
2517:
2480:
2440:
2397:
2354:
2319:
2262:
2198:
2128:
2069:
2008:
1951:
1906:
1788:
1763:
1736:
1616:
1556:
1461:
1188:
1125:
1004:
940:
745:
484:
417:
375:
325:
2927:"Gallium Nitride-Based Modules Set New 180-Day Standard For High Power Operation."
1910:
1184:) were experimentally demonstrated in 1993 and they are being actively developed.
27:
This article is about Gallium nitride, the chemical compound. For other uses, see
5136:
5118:
5108:
5098:
4928:
4758:
4716:
4706:
4690:
4441:
4431:
4307:
4294:
4275:
4077:
4044:
4011:
4005:
3907:
3839:
3757:
3452:
3435:
2308:"Über die Kristallstrukturen von Cu3N, GaN und InN Metallamide und Metallnitride"
2231:
1584:
1580:
1560:
1366:
1160:
1129:
1088:
An early synthesis of gallium nitride was by Robert Juza and Harry Hahn in 1938.
1066:
1027:. However, the Si and Mg atoms change the way the GaN crystals grow, introducing
1000:
3301:
5188:
5113:
5063:
4981:
4819:
4772:
4747:
4667:
4402:
4379:
4334:
4242:
4187:
4167:
4141:
4001:
1968:
1643:
1319:
1312:
1168:
1156:. Potential markets for high-power/high-frequency devices based on GaN include
1070:
1028:
960:
903:
872:
869:
809:
772:
615:
1955:
194:
5226:
4829:
4648:
4529:
4454:
4095:
4091:
4054:
3461:
2814:
2010 IEEE Intl. Symposium, Technical Abstract Book, Session TH3D, pp. 164–165
2690:
2676:
2323:
2013:
1631:
1423:
988:
875:
764:
716:
364:
161:
3340:
2521:
2149:"Discovery in gallium nitride a key enabler of energy efficient electronics"
4852:
4810:
4578:
4252:
3212:
2999:"U.S. Army Awards Lockheed Martin Contract Extending AN/TPQ-53 Radar Range"
2727:"HRL Laboratories claims first gallium nitride CMOS transistor fabrication"
2307:
1828:
Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe
1775:
1397:
1385:
1351:
1231:
1054:
949:
895:
2444:
2133:
2108:
687:
2912:
2401:
2202:
2074:
2049:
1469:
1449:
1227:
1039:
918:
865:
700:
631:
456:
52:
3434:
Murata, Junji; Nishiguchi, Yoshito; Iwasaki, Takeshi (1 December 2018).
3262:
3204:
2225:
Blue Diode Research Hastens Day of Large-Scale Solid-State Light Sources
673:
627:
4182:
4157:
2902:
2886:"Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate"
2885:
1210:
1164:
1121:
925:
680:
336:
141:
2668:
1767:
1740:
1422:
fighter. Saab already offers products with GaN based radars, like the
3988:
3962:
3692:
2581:
2484:
2266:
1847:
1695:
1465:
1431:
1401:
1243:
1172:
1157:
992:
929:
3531:
3474:
3112:"Saab's Giraffe 1X Radar Offers a Man-Portable 75km Detection Range"
2745:"GaN: Pushing the limits of power density & efficiency | TI.com"
2358:
808:
Except where otherwise noted, data are given for materials in their
3279:
Ceramics Science and Technology, Volume 2: Materials and Properties
1568:
1564:
1117:
1077:
was calculated, thus providing data for the design of GaN devices.
1050:
996:
891:
859:
646:
386:
2645:
2181:
N/GaN Heterostructure – Compositional and Impurity Dependence –".
2029:"Gallium Nitride as an Electromechanical Material. R-Z. IEEE 2014"
1969:
Lidow, Alexander; Witcher, J. Brandon; Smalley, Ken (March 2011).
1789:
Johan Strydom; Michael de Rooij; David Reusch; Alex Lidow (2019).
639:
129:
122:
3979:
3964:
3684:
2769:
1658:
1620:
1607:
that are solvent-free and require no radiation before polishing.
1552:
1408:
1393:
1053:
in GaN in 1999. Scientists at ARL experimentally obtained a peak
1042:
density, on the order of 10 to 10 defects per square centimeter.
1035:
1032:
1012:
921:
856:
681:
601:
354:
181:
3076:"Gripen C/D Flies with Saab's new AESA Radar for the First Time"
1344:
GaN technology is also utilized in military electronics such as
1335:
the use of a p-type layer on top of the AlGaN/GaN heterojunction
1049:(ARL) provided the first measurement of the high field electron
4100:
1826:
Bougrov V., Levinshtein M.E., Rumyantsev S.L., Zubrilov A., in
1427:
1415:
1389:
1294:
1290:
1235:
1181:
1016:
1008:
3389:
3130:"Saab Receives Swedish Order for Giraffe 4A and Arthur Radars"
2090:
Strongly localized donor level in oxygen doped gallium nitride
1289:
GaN-based metal–oxide–semiconductor field-effect transistors (
971:
2883:
2600:"Enhancement Mode GaN MOSFET Delivers Impressive Performance"
2559:
2497:
1624:
1109:
112:
43:
1753:
1373:
radar system to replace two medium-range radar systems, the
231:
3867:
2102:
2100:
2098:
934:
devices have shown stability in high radiation environments
2172:
2043:
2041:
1583:
is necessary for growing quantum wells and other kinds of
1329:
the use of a MIS-type gate stack, with recess of the AlGaN
3302:
Jian-Jang Huang, Hao-Chung Kuo, Shyh-Chiang Shen (2014).
2282:"A brief history of gallium nitride (GaN) semiconductors"
2243:
2106:
1448:
and nanowires are proposed for applications in nanoscale
1251:
1092:
758:
735:
3509:
Shipman, Matt and Ivanisevic, Albena (24 October 2011).
2416:
2336:
2107:
Amano, H.; Kito, M.; Hiramatsu, K.; Akasaki, I. (1989).
2095:
1718:
1452:, optoelectronics and biochemical-sensing applications.
932:. Military and space applications could also benefit as
3433:
3276:
2831:"SiC and GaN Vie for Slice of the Electric Vehicle Pie"
2373:
2166:
2038:
3233:
2770:"Simplifying Power Conversion in High-Voltage Systems"
1936:
IEEE Journal of Selected Topics in Quantum Electronics
2422:
1989:"Review of GaN-based devices for terahertz operation"
1538:
1369:
to incorporate GaN active-device technology into the
3182:
1254:) with colors that can go from red to ultra-violet.
3148:"Arexis - Outsmarting threats by electronic attack"
3094:"Saab first in its industry to bring GaN to market"
1293:) and metal–semiconductor field-effect transistor (
3304:Nitride Semiconductor Light-Emitting Diodes (LEDs)
2462:
2312:Zeitschrift für Anorganische und Allgemeine Chemie
2379:
1793:(3 ed.). California, USA: Wiley. p. 3.
5224:
1135:
193:
2973:"GaN Extends Range of Army's Q-53 Radar System"
2082:
1623:) and industrial hygiene monitoring studies of
662:
98:
2944:"Export Market Strong for Thales Ground Radar"
2593:
2591:
1791:GaN Transistors for efficient power conversion
1595:Commercially, GaN crystals can be grown using
1073:of 225 kV/cm. With this information, the
3948:
3547:
2719:
1627:sources have been reported in a 2004 review.
1192:standard silicon wafer, often referred to as
3375:: CS1 maint: multiple names: authors list (
3326:: CS1 maint: multiple names: authors list (
2824:
2822:
2820:
2047:
1257:
3227:
2966:
2964:
2588:
1493:at 750 °C. As Ga will not react with N
3955:
3941:
3554:
3540:
1817:, Thesis, North Carolina State University.
1197:spontaneous polarization mismatch to GaN.
246:
171:
149:
3451:
3261:
3251:
2911:
2901:
2817:
2541:
2539:
2458:
2456:
2454:
2132:
2073:
2012:
1590:
213:
3176:
2961:
2305:
1455:
1261:
1069:time of 2.5 picoseconds, attained at an
970:
1933:
242:
14:
5225:
4023:
3963:Salts and covalent derivatives of the
2635:(April/May 2014). SeminconductorTODAY.
2536:
2451:
1896:
1839:
1712:
1687:
966:
162:
5047:
3936:
3561:
3535:
3172:from the original on 31 October 2020.
2970:
2828:
2597:
2279:
2021:
1843:CRC Handbook of Chemistry and Physics
1691:CRC Handbook of Chemistry and Physics
1683:
1681:
1679:
1396:. In 2019, Lockheed Martin's partner
1178:thermal generation of charge carriers
983:14.21 GPa), mechanically stable
924:), making it a suitable material for
274:Key: JMASRVWKEDWRBT-UHFFFAOYSA-N
1571:. Growth temperature ranges between
952:in electronic equipment, converting
2425:Japanese Journal of Applied Physics
2382:Japanese Journal of Applied Physics
2183:Japanese Journal of Applied Physics
2113:Japanese Journal of Applied Physics
2054:Japanese Journal of Applied Physics
1986:
1833:
1411:flight tested its new GaN designed
1346:active electronically scanned array
1038:compounds also tend to have a high
886:is a very hard material that has a
284:Key: JMASRVWKEDWRBT-MDMVGGKAAI
184:
24:
3048:
3022:
2996:
2941:
2306:Juza, Robert; Hahn, Harry (1938).
1676:
1539:Metal-organic vapour phase epitaxy
1484:
1284:high-electron-mobility transistors
1268:high-electron-mobility transistors
1221:
658:
25:
5264:
3520:
3513:. North Carolina State University
1924:|bibcode = 2001PSSAR.183...81D }}
1846:(92nd ed.). Boca Raton, FL:
1694:(92nd ed.). Boca Raton, FL:
1601:metalorganic vapour phase epitaxy
1547:are grown on industrial scale by
1114:metalorganic vapour-phase epitaxy
723:. Retrieved on 18 February 2024.
391:3.4 eV (300 K, direct)
3277:Ralf Riedel, I-Wei Chen (2015).
3253:10.1016/j.pquantelec.2018.07.001
1840:Haynes, William M., ed. (2011).
1688:Haynes, William M., ed. (2011).
1535:at normal atmospheric pressure.
1003:, despite the mismatch in their
816:
571:
401:1500 cm/(V·s) (300 K)
51:
42:
3503:
3468:
3440:Electrochemistry Communications
3427:
3402:
3383:
3334:
3295:
3270:
3240:Progress in Quantum Electronics
3158:
3140:
3122:
3104:
3086:
3068:
3042:
3016:
2990:
2971:Brown, Jack (16 October 2018).
2935:
2920:
2877:
2856:
2808:
2795:"Apple 30W Compact GaN Charger"
2787:
2762:
2737:
2701:
2683:
2639:
2629:Compounds & AdvancedSilicon
2614:
2553:
2491:
2330:
2299:
2273:
2237:
2223:Preuss, Paul (11 August 2000).
2217:
2141:
2048:Akasaki, I.; Amano, H. (1997).
1987:Ahi, Kiarash (September 2017).
1980:
1962:
1927:
1917:
1216:
1167:is as the microwave source for
1080:
812:(at 25 °C , 100 kPa).
411:1.3 W/(cm·K) (300 K)
3497:10.1016/j.jcrysgro.2004.09.007
2829:Davis, Sam (1 November 2009).
1890:
1864:
1820:
1807:
1782:
1747:
1386:TPS-77 Multi Role Radar System
13:
1:
3363:10.1016/S0022-0248(98)00819-7
2280:Ahmad, Majeed (23 May 2023).
1911:10.1021/acs.chemmater.4c00178
1878:. Thermo Fisher Science. 2020
1669:
1204:
1136:GaN transistors and power ICs
1047:U.S. Army Research Laboratory
3869:Organogallium(III) compounds
3453:10.1016/j.elecom.2018.11.006
2501:IEEE Electron Device Letters
1543:Blue, white and ultraviolet
1479:
1440:
1301:(SBDs) have also been made.
1120:. Other substrates used are
7:
2948:Aviation International News
2731:www.semiconductor-today.com
1637:
1460:When doped with a suitable
1234:. The mixture of GaN with
1023:and with magnesium (Mg) to
494: = 3.186 Å,
10:
5269:
5049:
2649:Journal of Applied Physics
2465:Journal of Applied Physics
1721:Journal of Applied Physics
1630:Bulk GaN is non-toxic and
985:wide-bandgap semiconductor
888:Wurtzite crystal structure
793:Gallium arsenide phosphide
785:Aluminium gallium arsenide
341:83.730 g/mol
26:
4025:
3972:
3672:
3653:
3627:
3592:
3569:
3477:Journal of Crystal Growth
3343:Journal of Crystal Growth
2709:"GaN Integrated Circuits"
2598:Davis, Sam (March 2010).
2234:. Berkeley Lab., lbl.gov.
1956:10.1109/JSTQE.2002.801675
1610:
1339:
1258:Transistors and power ICs
1154:Johnson's figure of merit
1031:and making them brittle.
806:
797:Aluminium gallium nitride
727:
552:
547:
515:
498: = 5.186 Å
435:
318:
293:
258:
82:
74:
64:
59:
50:
41:
3306:. Woodhead. p. 68.
3025:"AN/TPQ-53 Radar System"
2324:10.1002/zaac.19382390307
2014:10.1117/1.OE.56.9.090901
1976:. GOMAC Tech Conference.
1813:Mion, Christian (2005).
1563:, the carrier gas being
1400:, developed a GaN-based
1272:Ferdinand-Braun-Institut
1128:mismatch of only 2% and
1098:field-effect transistors
610:Precautionary statements
5253:Wurtzite structure type
2562:Applied Physics Letters
2522:10.1109/LED.2006.881020
2339:Applied Physics Letters
2247:Applied Physics Letters
2230:25 October 2010 at the
1474:magnetic semiconductors
1299:Schottky barrier diodes
1103:
789:Indium gallium arsenide
369:> 1600 °C
1899:Chemistry of Materials
1654:Molecular-beam epitaxy
1597:molecular beam epitaxy
1591:Molecular beam epitaxy
1275:
1209:In 2016 the first GaN
976:
878:commonly used in blue
801:Indium gallium nitride
669:
281:InChI=1/Ga.N/rGaN/c1-2
2445:10.7567/JJAP.34.L1517
2134:10.1143/JJAP.28.L2112
1649:Semiconductor devices
1551:. The precursors are
1468:, GaN is a promising
1456:Spintronics potential
1265:
974:
882:since the 1990s. The
880:light-emitting diodes
668:
506:Coordination geometry
195:LW9640000 = LW9640000
5248:III-V semiconductors
3168:. 12 February 2015.
2402:10.1143/JJAP.29.L205
2203:10.1143/JJAP.40.L195
2075:10.1143/JJAP.36.5393
1605:polymer electrolytes
1573:800 and 1100 °C
1398:ELTA Systems Limited
979:GaN is a very hard (
902:for applications in
651:(fire diamond)
407:Thermal conductivity
77:gallium(III) nitride
5243:Inorganic compounds
3489:2004JCrGr.272..816S
3355:1999JCrGr.196...47S
3205:10.1038/nature01551
3197:2003Natur.422..599G
3136:on 5 December 2018.
3100:on 6 February 2016.
2841:on 20 November 2021
2661:2017JAP...121x4502R
2574:1993ApPhL..62.1786A
2549:. 29 November 2023.
2514:2006IEDL...27..713D
2477:1994JAP....76.1363M
2437:1995JaJAP..34L1517A
2394:1990JaJAP..29L.205A
2351:1986ApPhL..48..353A
2259:2000ApPhL..76.1155W
2195:2001JaJAP..40..195T
2125:1989JaJAP..28L2112A
2066:1997JaJAP..36.5393A
2005:2017OptEn..56i0901A
1993:Optical Engineering
1948:2002IJSTQ...8..823A
1872:"Safety Data Sheet"
1733:2004JAP....96.2501H
1664:Lithium-ion battery
1187:In 2010, the first
1150:saturation velocity
987:material with high
967:Physical properties
917:is low (like other
913:Its sensitivity to
543:−110.2 kJ/mol
376:Solubility in water
38:
3527:Ioffe data archive
3414:patents.google.com
3154:on 23 August 2020.
3118:on 23 August 2020.
3049:Martin, Lockheed.
3023:Martin, Lockheed.
2997:Martin, Lockheed.
2903:10.3390/en10020153
1577:trimethylaluminium
1575:. Introduction of
1436:AN/TPS-80 (G/ATOR)
1407:On April 8, 2020,
1310:power transmission
1276:
1142:breakdown voltages
977:
915:ionizing radiation
908:frequency doubling
900:special properties
839:Infobox references
750:Gallium antimonide
728:Related compounds
670:
36:
5238:Gallium compounds
5220:
5219:
5214:
5213:
3930:
3929:
3926:
3925:
3563:Gallium compounds
3191:(6932): 599–602.
2977:Microwaves&RF
2835:Power Electronics
2774:Texas Instruments
2669:10.1063/1.4989836
2604:Electronic Design
2547:"Why GaN Systems"
2153:Cornell Chronicle
2017:– via SPIE.
1905:(13): 6392–6409.
1800:978-1-119-59442-0
1768:10.1021/la304039n
1741:10.1063/1.1772878
1356:Ground Master 400
1270:(manufactured by
1230:are used to read
1226:GaN-based violet
1146:electron mobility
1075:electron mobility
1005:lattice constants
957:mains electricity
847:Chemical compound
845:
844:
780:Related compounds
769:Aluminium nitride
742:Gallium phosphide
717:Sigma-Aldrich Co.
711:Safety data sheet
596:Hazard statements
443:Crystal structure
397:Electron mobility
227:CompTox Dashboard
131:Interactive image
124:Interactive image
16:(Redirected from
5260:
5168:
5162:
5147:
5141:
4991:
4949:
4938:
4911:
4905:
4886:
4862:
4849:
4835:
4816:
4807:
4795:
4768:
4754:
4729:
4700:
4687:
4673:
4654:
4645:
4634:
4607:
4588:
4574:
4563:
4552:
4540:
4534:
4524:
4518:
4509:
4489:
4464:
4451:
4437:
4428:
4408:
4399:
4389:
4376:
4363:
4345:
4339:
4326:
4304:
4285:
4272:
4258:
4249:
4229:
4220:
4207:
4194:
4178:
4172:
4163:
4152:
4146:
4138:
4124:
4110:
4087:
4074:
4060:
4051:
4038:
4018:
4008:
3998:
3985:
3976:
3975:
3957:
3950:
3943:
3934:
3933:
3865:
3864:
3556:
3549:
3542:
3533:
3532:
3514:
3507:
3501:
3500:
3472:
3466:
3465:
3455:
3431:
3425:
3424:
3422:
3420:
3410:"Google Patents"
3406:
3400:
3399:
3398:
3394:
3387:
3381:
3380:
3374:
3366:
3338:
3332:
3331:
3325:
3317:
3299:
3293:
3292:
3274:
3268:
3267:
3265:
3255:
3231:
3225:
3224:
3180:
3174:
3173:
3162:
3156:
3155:
3150:. Archived from
3144:
3138:
3137:
3132:. Archived from
3126:
3120:
3119:
3114:. Archived from
3108:
3102:
3101:
3096:. Archived from
3090:
3084:
3083:
3078:. Archived from
3072:
3066:
3065:
3063:
3061:
3046:
3040:
3039:
3037:
3035:
3020:
3014:
3013:
3011:
3009:
2994:
2988:
2987:
2985:
2983:
2968:
2959:
2958:
2956:
2954:
2939:
2933:
2932:, 13 April 2011.
2930:Northrop Grumman
2924:
2918:
2917:
2915:
2905:
2881:
2875:
2874:
2872:
2870:
2860:
2854:
2853:
2848:
2846:
2837:. Archived from
2826:
2815:
2812:
2806:
2805:
2803:
2801:
2791:
2785:
2784:
2782:
2780:
2766:
2760:
2759:
2757:
2755:
2741:
2735:
2734:
2723:
2717:
2716:
2705:
2699:
2698:
2687:
2681:
2680:
2643:
2637:
2636:
2626:
2618:
2612:
2611:
2595:
2586:
2585:
2582:10.1063/1.109549
2557:
2551:
2550:
2543:
2534:
2533:
2495:
2489:
2488:
2485:10.1063/1.358463
2460:
2449:
2448:
2420:
2414:
2413:
2377:
2371:
2370:
2334:
2328:
2327:
2303:
2297:
2296:
2294:
2292:
2277:
2271:
2270:
2267:10.1063/1.125968
2253:(9): 1155–1157.
2241:
2235:
2221:
2215:
2214:
2170:
2164:
2163:
2161:
2159:
2145:
2139:
2138:
2136:
2104:
2093:
2086:
2080:
2079:
2077:
2045:
2036:
2035:
2033:
2025:
2019:
2018:
2016:
1984:
1978:
1977:
1975:
1966:
1960:
1959:
1931:
1925:
1921:
1915:
1914:
1894:
1888:
1887:
1885:
1883:
1868:
1862:
1861:
1850:. p. 5.12.
1837:
1831:
1824:
1818:
1811:
1805:
1804:
1786:
1780:
1779:
1751:
1745:
1744:
1716:
1710:
1709:
1698:. p. 4.64.
1685:
1617:trimethylgallium
1585:heterostructures
1574:
1557:trimethylgallium
1534:
1462:transition metal
1189:enhancement-mode
1171:, replacing the
1126:lattice constant
1064:
1062:
1029:tensile stresses
941:gallium arsenide
862:
829:
823:
820:
819:
746:Gallium arsenide
690:
683:
676:
661:
641:
637:
633:
629:
625:
621:
617:
603:
575:
539:
516:Thermochemistry
485:Lattice constant
418:Refractive index
326:Chemical formula
251:
250:
235:
233:
217:
197:
186:
175:
164:
153:
133:
126:
102:
55:
46:
39:
37:Gallium nitride
35:
21:
5268:
5267:
5263:
5262:
5261:
5259:
5258:
5257:
5223:
5222:
5221:
5216:
5215:
5169:
5166:
5163:
5160:
5148:
5145:
5142:
5139:
4990:
4986:
4982:
4947:
4943:
4937:
4933:
4929:
4912:
4909:
4906:
4903:
4885:
4881:
4877:
4876:
4861:
4857:
4853:
4851:
4848:
4844:
4840:
4834:
4830:
4818:
4815:
4811:
4809:
4805:
4801:
4794:
4790:
4786:
4767:
4763:
4759:
4752:
4748:
4727:
4723:
4699:
4695:
4691:
4689:
4686:
4682:
4678:
4672:
4668:
4656:
4653:
4649:
4647:
4643:
4639:
4633:
4629:
4625:
4618:
4609:
4606:
4602:
4598:
4587:
4583:
4579:
4572:
4568:
4561:
4557:
4550:
4546:
4541:
4538:
4535:
4532:
4525:
4522:
4519:
4516:
4507:
4503:
4501:
4488:
4484:
4480:
4478:
4463:
4459:
4455:
4453:
4450:
4446:
4442:
4436:
4432:
4430:
4426:
4422:
4410:
4407:
4403:
4401:
4398:
4394:
4388:
4384:
4380:
4378:
4375:
4371:
4367:
4365:
4362:
4358:
4354:
4352:
4348:
4346:
4343:
4340:
4337:
4328:
4325:
4321:
4317:
4315:
4306:
4303:
4299:
4295:
4284:
4280:
4276:
4274:
4271:
4267:
4263:
4257:
4253:
4251:
4247:
4243:
4231:
4228:
4224:
4222:
4219:
4215:
4211:
4209:
4206:
4202:
4198:
4196:
4192:
4188:
4181:
4179:
4176:
4173:
4170:
4162:
4158:
4153:
4150:
4147:
4144:
4140:
4137:
4133:
4129:
4126:
4123:
4119:
4115:
4112:
4109:
4105:
4101:
4094:
4086:
4082:
4078:
4076:
4073:
4069:
4065:
4059:
4055:
4053:
4049:
4045:
4037:
4033:
4029:
4016:
4012:
4010:
4006:
4004:
4000:
3997:
3993:
3989:
3987:
3984:
3980:
3968:
3961:
3931:
3922:
3919:
3915:
3911:
3903:
3899:
3891:
3887:
3883:
3879:
3863:
3859:
3855:
3847:
3843:
3835:
3831:
3823:
3819:
3811:
3807:
3789:
3781:
3777:
3773:
3765:
3761:
3753:
3745:
3732:
3724:
3716:
3708:
3700:
3696:
3688:
3668:
3664:
3649:
3623:
3603:
3588:
3584:
3580:
3565:
3560:
3523:
3518:
3517:
3508:
3504:
3483:(1–4): 816–21.
3473:
3469:
3432:
3428:
3418:
3416:
3408:
3407:
3403:
3396:
3388:
3384:
3368:
3367:
3339:
3335:
3319:
3318:
3314:
3300:
3296:
3289:
3275:
3271:
3232:
3228:
3181:
3177:
3164:
3163:
3159:
3146:
3145:
3141:
3128:
3127:
3123:
3110:
3109:
3105:
3092:
3091:
3087:
3074:
3073:
3069:
3059:
3057:
3055:Lockheed Martin
3047:
3043:
3033:
3031:
3029:Lockheed Martin
3021:
3017:
3007:
3005:
3003:Lockheed Martin
2995:
2991:
2981:
2979:
2969:
2962:
2952:
2950:
2942:Pocock, Chris.
2940:
2936:
2925:
2921:
2882:
2878:
2868:
2866:
2862:
2861:
2857:
2844:
2842:
2827:
2818:
2813:
2809:
2799:
2797:
2793:
2792:
2788:
2778:
2776:
2768:
2767:
2763:
2753:
2751:
2743:
2742:
2738:
2725:
2724:
2720:
2707:
2706:
2702:
2691:"GaN Power ICs"
2689:
2688:
2684:
2644:
2640:
2624:
2620:
2619:
2615:
2596:
2589:
2558:
2554:
2545:
2544:
2537:
2496:
2492:
2461:
2452:
2421:
2417:
2378:
2374:
2359:10.1063/1.96549
2335:
2331:
2304:
2300:
2290:
2288:
2278:
2274:
2242:
2238:
2232:Wayback Machine
2222:
2218:
2180:
2176:
2171:
2167:
2157:
2155:
2147:
2146:
2142:
2105:
2096:
2087:
2083:
2046:
2039:
2031:
2027:
2026:
2022:
1985:
1981:
1973:
1967:
1963:
1932:
1928:
1922:
1918:
1895:
1891:
1881:
1879:
1870:
1869:
1865:
1858:
1838:
1834:
1825:
1821:
1812:
1808:
1801:
1787:
1783:
1752:
1748:
1717:
1713:
1706:
1686:
1677:
1672:
1640:
1613:
1593:
1581:trimethylindium
1572:
1561:triethylgallium
1541:
1533:900–980 °C
1532:
1526:
1522:
1518:
1514:
1508:
1504:
1496:
1492:
1487:
1485:Bulk substrates
1482:
1458:
1443:
1367:Lockheed Martin
1354:introduced the
1342:
1260:
1224:
1222:LEDs and lasers
1219:
1207:
1169:microwave ovens
1161:radio-frequency
1138:
1130:silicon carbide
1106:
1083:
1060:
1058:
1001:silicon carbide
969:
959:to low-voltage
855:
851:Gallium nitride
848:
841:
836:
835:
834: ?)
825:
821:
817:
813:
799:
795:
791:
787:
781:
771:
767:
761:
748:
744:
738:
721:Gallium nitride
695:
694:
693:
692:
685:
678:
671:
667:
659:
612:
598:
584:
568:
540:
537:
531:
527:
524:
523:Std enthalpy of
508:
499:
487:
475:
467:
459:
445:
428:
426:
378:
328:
314:
311:
306:
301:
300:
289:
286:
285:
282:
276:
275:
272:
266:
265:
254:
236:
229:
220:
200:
187:
156:
136:
116:
105:
92:
78:
70:
69:Gallium nitride
32:
23:
22:
15:
12:
11:
5:
5266:
5256:
5255:
5250:
5245:
5240:
5235:
5218:
5217:
5212:
5211:
5208:
5205:
5202:
5199:
5196:
5191:
5186:
5181:
5176:
5171:
5165:
5159:
5155:
5150:
5144:
5138:
5134:
5131:
5127:
5126:
5121:
5116:
5111:
5106:
5101:
5096:
5091:
5086:
5081:
5076:
5071:
5066:
5061:
5056:
5052:
5051:
5048:
5045:
5044:
5041:
5038:
5035:
5032:
5029:
5026:
5023:
5020:
5017:
5014:
5011:
5008:
5005:
5002:
4999:
4996:
4993:
4988:
4984:
4979:
4975:
4974:
4971:
4968:
4965:
4960:
4951:
4945:
4940:
4935:
4931:
4926:
4923:
4920:
4917:
4914:
4908:
4902:
4898:
4893:
4888:
4883:
4879:
4872:
4867:
4864:
4859:
4855:
4846:
4842:
4837:
4832:
4826:
4825:
4822:
4813:
4803:
4798:
4792:
4788:
4783:
4778:
4775:
4770:
4765:
4761:
4756:
4750:
4745:
4740:
4737:
4734:
4731:
4725:
4719:
4714:
4709:
4704:
4702:
4697:
4693:
4684:
4680:
4675:
4670:
4664:
4663:
4660:
4651:
4641:
4636:
4631:
4627:
4622:
4613:
4604:
4600:
4595:
4590:
4585:
4581:
4576:
4570:
4565:
4559:
4554:
4548:
4543:
4537:
4531:
4527:
4521:
4515:
4511:
4505:
4496:
4491:
4486:
4482:
4473:
4468:
4466:
4461:
4457:
4448:
4444:
4439:
4434:
4424:
4418:
4417:
4414:
4405:
4396:
4391:
4386:
4382:
4373:
4369:
4360:
4356:
4342:
4336:
4332:
4323:
4319:
4310:
4301:
4297:
4292:
4287:
4282:
4278:
4269:
4265:
4260:
4255:
4245:
4239:
4238:
4235:
4226:
4217:
4213:
4204:
4200:
4190:
4185:
4175:
4169:
4165:
4160:
4155:
4149:
4143:
4135:
4131:
4121:
4117:
4107:
4103:
4098:
4089:
4084:
4080:
4071:
4067:
4062:
4057:
4047:
4041:
4040:
4035:
4031:
4026:
4024:
4022:
4020:
4014:
3995:
3991:
3982:
3974:
3973:
3970:
3969:
3960:
3959:
3952:
3945:
3937:
3928:
3927:
3924:
3923:
3921:
3917:
3913:
3909:
3905:
3901:
3897:
3893:
3889:
3885:
3881:
3877:
3873:
3871:
3862:
3861:
3857:
3853:
3849:
3845:
3841:
3837:
3833:
3829:
3825:
3821:
3817:
3813:
3809:
3805:
3801:
3796:
3791:
3787:
3783:
3779:
3775:
3771:
3767:
3763:
3759:
3755:
3751:
3747:
3743:
3739:
3734:
3730:
3726:
3722:
3718:
3714:
3710:
3706:
3702:
3698:
3694:
3690:
3686:
3682:
3676:
3674:
3670:
3669:
3667:
3666:
3662:
3657:
3655:
3654:Gallium(I,III)
3651:
3650:
3648:
3647:
3642:
3637:
3631:
3629:
3625:
3624:
3622:
3621:
3616:
3611:
3606:
3601:
3596:
3594:
3590:
3589:
3587:
3586:
3582:
3578:
3573:
3571:
3567:
3566:
3559:
3558:
3551:
3544:
3536:
3530:
3529:
3522:
3521:External links
3519:
3516:
3515:
3502:
3467:
3426:
3401:
3382:
3333:
3313:978-0857099303
3312:
3294:
3288:978-3527802579
3287:
3269:
3226:
3175:
3157:
3139:
3121:
3103:
3085:
3082:on 2 May 2020.
3067:
3041:
3015:
2989:
2960:
2934:
2919:
2876:
2855:
2816:
2807:
2786:
2761:
2736:
2718:
2700:
2682:
2655:(24): 244502.
2638:
2613:
2587:
2552:
2535:
2490:
2450:
2431:(11B): L1517.
2415:
2372:
2329:
2318:(3): 282–287.
2298:
2272:
2236:
2216:
2178:
2174:
2165:
2140:
2094:
2081:
2037:
2020:
1979:
1961:
1942:(4): 823–832.
1926:
1916:
1889:
1863:
1856:
1832:
1819:
1806:
1799:
1781:
1762:(1): 216–220.
1746:
1711:
1704:
1674:
1673:
1671:
1668:
1667:
1666:
1661:
1656:
1651:
1646:
1644:Schottky diode
1639:
1636:
1612:
1609:
1592:
1589:
1540:
1537:
1529:
1528:
1524:
1520:
1516:
1512:
1509:
1506:
1502:
1494:
1490:
1486:
1483:
1481:
1478:
1457:
1454:
1442:
1439:
1341:
1338:
1337:
1336:
1333:
1330:
1327:
1320:depletion mode
1259:
1256:
1223:
1220:
1218:
1215:
1206:
1203:
1140:The very high
1137:
1134:
1105:
1102:
1082:
1079:
1071:electric field
981:Knoop hardness
968:
965:
950:power supplies
904:optoelectronic
873:direct bandgap
864:) is a binary
846:
843:
842:
837:
815:
814:
810:standard state
807:
804:
803:
782:
779:
776:
775:
773:Indium nitride
762:
756:
753:
752:
739:
733:
730:
729:
725:
724:
714:
707:
706:
705:Non-flammable
703:
697:
696:
686:
679:
672:
657:
656:
655:
654:
652:
643:
642:
613:
608:
605:
604:
599:
594:
591:
590:
585:
580:
577:
576:
569:
564:
561:
560:
550:
549:
545:
544:
541:
535:
529:
521:
518:
517:
513:
512:
509:
504:
501:
500:
490:
488:
483:
480:
479:
473:
465:
460:
455:
452:
451:
446:
441:
438:
437:
433:
432:
429:
424:
416:
413:
412:
409:
403:
402:
399:
393:
392:
389:
383:
382:
379:
374:
371:
370:
367:
361:
360:
357:
351:
350:
349:yellow powder
347:
343:
342:
339:
333:
332:
329:
324:
321:
320:
316:
315:
313:
312:
309:
307:
304:
296:
295:
294:
291:
290:
288:
287:
283:
280:
279:
277:
273:
270:
269:
261:
260:
259:
256:
255:
253:
252:
239:
237:
225:
222:
221:
219:
218:
210:
208:
202:
201:
199:
198:
190:
188:
180:
177:
176:
166:
158:
157:
155:
154:
146:
144:
138:
137:
135:
134:
127:
119:
117:
110:
107:
106:
104:
103:
95:
93:
88:
85:
84:
80:
79:
76:
72:
71:
68:
62:
61:
57:
56:
48:
47:
9:
6:
4:
3:
2:
5265:
5254:
5251:
5249:
5246:
5244:
5241:
5239:
5236:
5234:
5231:
5230:
5228:
5209:
5206:
5203:
5200:
5197:
5195:
5192:
5190:
5187:
5185:
5182:
5180:
5177:
5175:
5172:
5170:
5156:
5154:
5151:
5149:
5135:
5132:
5129:
5128:
5125:
5122:
5120:
5117:
5115:
5112:
5110:
5107:
5105:
5102:
5100:
5097:
5095:
5092:
5090:
5087:
5085:
5082:
5080:
5077:
5075:
5072:
5070:
5067:
5065:
5062:
5060:
5057:
5054:
5053:
5046:
5042:
5039:
5036:
5033:
5030:
5027:
5024:
5021:
5018:
5015:
5012:
5009:
5006:
5003:
5000:
4997:
4994:
4992:
4980:
4977:
4976:
4972:
4969:
4966:
4964:
4961:
4959:
4957:
4952:
4950:
4941:
4939:
4927:
4924:
4921:
4918:
4915:
4913:
4899:
4897:
4894:
4892:
4889:
4887:
4873:
4871:
4868:
4865:
4863:
4850:
4838:
4836:
4828:
4827:
4823:
4821:
4817:
4808:
4799:
4796:
4784:
4782:
4779:
4776:
4774:
4771:
4769:
4757:
4755:
4746:
4744:
4741:
4738:
4735:
4732:
4730:
4720:
4718:
4715:
4713:
4710:
4708:
4705:
4703:
4701:
4688:
4676:
4674:
4666:
4665:
4661:
4659:
4655:
4646:
4637:
4635:
4623:
4621:
4617:
4614:
4612:
4608:
4596:
4594:
4591:
4589:
4577:
4575:
4566:
4564:
4555:
4553:
4544:
4542:
4528:
4526:
4512:
4510:
4500:
4497:
4495:
4492:
4490:
4477:
4474:
4472:
4469:
4467:
4465:
4452:
4440:
4438:
4429:
4420:
4419:
4415:
4413:
4409:
4400:
4392:
4390:
4377:
4364:
4351:
4347:
4333:
4331:
4327:
4314:
4311:
4309:
4305:
4293:
4291:
4288:
4286:
4273:
4261:
4259:
4250:
4241:
4240:
4236:
4234:
4230:
4221:
4208:
4195:
4186:
4184:
4180:
4166:
4164:
4156:
4154:
4139:
4125:
4111:
4099:
4097:
4093:
4090:
4088:
4075:
4063:
4061:
4052:
4043:
4042:
4039:
4027:
4021:
4019:
4009:
4003:
3999:
3986:
3978:
3977:
3971:
3966:
3958:
3953:
3951:
3946:
3944:
3939:
3938:
3935:
3920:
3906:
3904:
3894:
3892:
3874:
3872:
3870:
3866:
3860:
3850:
3848:
3838:
3836:
3826:
3824:
3814:
3812:
3802:
3800:
3797:
3795:
3792:
3790:
3784:
3782:
3768:
3766:
3756:
3754:
3748:
3746:
3740:
3738:
3735:
3733:
3727:
3725:
3719:
3717:
3711:
3709:
3703:
3701:
3691:
3689:
3683:
3681:
3678:
3677:
3675:
3671:
3665:
3659:
3658:
3656:
3652:
3646:
3643:
3641:
3638:
3636:
3633:
3632:
3630:
3626:
3620:
3617:
3615:
3612:
3610:
3607:
3605:
3598:
3597:
3595:
3591:
3585:
3575:
3574:
3572:
3568:
3564:
3557:
3552:
3550:
3545:
3543:
3538:
3537:
3534:
3528:
3525:
3524:
3512:
3506:
3498:
3494:
3490:
3486:
3482:
3478:
3471:
3463:
3459:
3454:
3449:
3445:
3441:
3437:
3430:
3415:
3411:
3405:
3392:
3386:
3378:
3372:
3364:
3360:
3356:
3352:
3348:
3344:
3337:
3329:
3323:
3315:
3309:
3305:
3298:
3290:
3284:
3281:. Wiley-Vch.
3280:
3273:
3264:
3259:
3254:
3249:
3245:
3241:
3237:
3230:
3222:
3218:
3214:
3210:
3206:
3202:
3198:
3194:
3190:
3186:
3179:
3171:
3167:
3161:
3153:
3149:
3143:
3135:
3131:
3125:
3117:
3113:
3107:
3099:
3095:
3089:
3081:
3077:
3071:
3056:
3052:
3045:
3030:
3026:
3019:
3004:
3000:
2993:
2978:
2974:
2967:
2965:
2949:
2945:
2938:
2931:
2928:
2923:
2914:
2913:11577/3259344
2909:
2904:
2899:
2895:
2891:
2887:
2880:
2865:
2859:
2852:
2840:
2836:
2832:
2825:
2823:
2821:
2811:
2796:
2790:
2775:
2771:
2765:
2750:
2746:
2740:
2732:
2728:
2722:
2714:
2710:
2704:
2696:
2692:
2686:
2678:
2674:
2670:
2666:
2662:
2658:
2654:
2650:
2642:
2634:
2630:
2623:
2617:
2609:
2605:
2601:
2594:
2592:
2583:
2579:
2575:
2571:
2567:
2563:
2556:
2548:
2542:
2540:
2531:
2527:
2523:
2519:
2515:
2511:
2507:
2503:
2502:
2494:
2486:
2482:
2478:
2474:
2470:
2466:
2459:
2457:
2455:
2446:
2442:
2438:
2434:
2430:
2426:
2419:
2411:
2407:
2403:
2399:
2395:
2391:
2387:
2383:
2376:
2368:
2364:
2360:
2356:
2352:
2348:
2344:
2340:
2333:
2325:
2321:
2317:
2313:
2309:
2302:
2287:
2283:
2276:
2268:
2264:
2260:
2256:
2252:
2248:
2240:
2233:
2229:
2226:
2220:
2212:
2208:
2204:
2200:
2196:
2192:
2188:
2184:
2169:
2154:
2150:
2144:
2135:
2130:
2126:
2122:
2119:(12): L2112.
2118:
2114:
2110:
2103:
2101:
2099:
2091:
2085:
2076:
2071:
2067:
2063:
2059:
2055:
2051:
2044:
2042:
2030:
2024:
2015:
2010:
2006:
2002:
1999:(9): 090901.
1998:
1994:
1990:
1983:
1972:
1965:
1957:
1953:
1949:
1945:
1941:
1937:
1930:
1920:
1912:
1908:
1904:
1900:
1893:
1877:
1876:fishersci.com
1873:
1867:
1859:
1857:1-4398-5511-0
1853:
1849:
1845:
1844:
1836:
1829:
1823:
1816:
1810:
1802:
1796:
1792:
1785:
1777:
1773:
1769:
1765:
1761:
1757:
1750:
1742:
1738:
1734:
1730:
1726:
1722:
1715:
1707:
1705:1-4398-5511-0
1701:
1697:
1693:
1692:
1684:
1682:
1680:
1675:
1665:
1662:
1660:
1657:
1655:
1652:
1650:
1647:
1645:
1642:
1641:
1635:
1633:
1632:biocompatible
1628:
1626:
1622:
1618:
1608:
1606:
1602:
1598:
1588:
1586:
1582:
1578:
1570:
1566:
1562:
1558:
1554:
1550:
1546:
1536:
1523:→ 2 GaN + 3 H
1510:
1505:→ 2 GaN + 3 H
1500:
1499:
1498:
1477:
1475:
1471:
1467:
1463:
1453:
1451:
1447:
1446:GaN nanotubes
1438:
1437:
1433:
1429:
1425:
1424:Giraffe radar
1421:
1420:JAS-39 Gripen
1417:
1414:
1410:
1405:
1403:
1399:
1395:
1391:
1387:
1382:
1380:
1376:
1372:
1368:
1364:
1359:
1357:
1353:
1349:
1347:
1334:
1331:
1328:
1325:
1324:
1323:
1321:
1316:
1314:
1311:
1306:
1302:
1300:
1296:
1292:
1287:
1285:
1280:
1273:
1269:
1264:
1255:
1253:
1249:
1245:
1241:
1237:
1233:
1232:Blu-ray Discs
1229:
1214:
1212:
1202:
1198:
1195:
1190:
1185:
1183:
1179:
1174:
1170:
1166:
1162:
1159:
1155:
1151:
1147:
1143:
1133:
1131:
1127:
1123:
1119:
1115:
1111:
1101:
1099:
1094:
1089:
1086:
1078:
1076:
1072:
1068:
1056:
1052:
1048:
1043:
1041:
1037:
1034:
1030:
1026:
1022:
1018:
1015:(Si) or with
1014:
1010:
1007:. GaN can be
1006:
1002:
998:
994:
990:
989:heat capacity
986:
982:
973:
964:
962:
958:
955:
951:
946:
942:
937:
935:
931:
927:
923:
920:
916:
911:
909:
905:
901:
897:
893:
889:
885:
881:
877:
876:semiconductor
874:
871:
867:
863:
861:
858:
852:
840:
833:
828:
811:
805:
802:
798:
794:
790:
786:
783:
778:
777:
774:
770:
766:
765:Boron nitride
763:
760:
755:
754:
751:
747:
743:
740:
737:
732:
731:
726:
722:
718:
715:
712:
709:
708:
704:
702:
699:
698:
691:
684:
677:
653:
650:
649:
645:
644:
614:
611:
607:
606:
600:
597:
593:
592:
589:
586:
583:
579:
578:
574:
570:
567:
563:
562:
558:
556:
551:
546:
542:
534:
526:
520:
519:
514:
510:
507:
503:
502:
497:
493:
489:
486:
482:
481:
478:
471:
464:
461:
458:
454:
453:
450:
447:
444:
440:
439:
434:
430:
423:
419:
415:
414:
410:
408:
405:
404:
400:
398:
395:
394:
390:
388:
385:
384:
380:
377:
373:
372:
368:
366:
365:Melting point
363:
362:
358:
356:
353:
352:
348:
345:
344:
340:
338:
335:
334:
330:
327:
323:
322:
317:
308:
303:
302:
299:
292:
278:
271:InChI=1S/Ga.N
268:
267:
264:
257:
249:
245:
244:DTXSID2067111
241:
240:
238:
228:
224:
223:
216:
212:
211:
209:
207:
204:
203:
196:
192:
191:
189:
183:
179:
178:
174:
170:
167:
165:
163:ECHA InfoCard
160:
159:
152:
148:
147:
145:
143:
140:
139:
132:
128:
125:
121:
120:
118:
114:
109:
108:
101:
97:
96:
94:
91:
87:
86:
81:
73:
67:
63:
58:
54:
49:
45:
40:
34:
30:
19:
4953:
4592:
3736:
3673:Gallium(III)
3505:
3480:
3476:
3470:
3443:
3439:
3429:
3417:. Retrieved
3413:
3404:
3385:
3371:cite journal
3349:(1): 47–52.
3346:
3342:
3336:
3303:
3297:
3278:
3272:
3263:10754/628417
3243:
3239:
3229:
3188:
3184:
3178:
3160:
3152:the original
3142:
3134:the original
3124:
3116:the original
3106:
3098:the original
3088:
3080:the original
3070:
3058:. Retrieved
3054:
3044:
3032:. Retrieved
3028:
3018:
3006:. Retrieved
3002:
2992:
2980:. Retrieved
2976:
2951:. Retrieved
2947:
2937:
2929:
2922:
2893:
2889:
2879:
2867:. Retrieved
2858:
2850:
2843:. Retrieved
2839:the original
2834:
2810:
2798:. Retrieved
2789:
2777:. Retrieved
2773:
2764:
2752:. Retrieved
2748:
2739:
2730:
2721:
2712:
2703:
2694:
2685:
2652:
2648:
2641:
2632:
2628:
2616:
2607:
2603:
2568:(15): 1786.
2565:
2561:
2555:
2505:
2499:
2493:
2468:
2464:
2428:
2424:
2418:
2385:
2381:
2375:
2342:
2338:
2332:
2315:
2311:
2301:
2289:. Retrieved
2285:
2275:
2250:
2246:
2239:
2219:
2189:(3A): L195.
2186:
2182:
2168:
2156:. Retrieved
2152:
2143:
2116:
2112:
2084:
2060:(9A): 5393.
2057:
2053:
2023:
1996:
1992:
1982:
1964:
1939:
1935:
1929:
1919:
1902:
1898:
1892:
1880:. Retrieved
1875:
1866:
1841:
1835:
1827:
1822:
1809:
1790:
1784:
1759:
1755:
1749:
1724:
1720:
1714:
1689:
1629:
1614:
1594:
1555:with either
1542:
1530:
1488:
1459:
1444:
1406:
1388:deployed to
1383:
1360:
1352:Thales Group
1350:
1343:
1317:
1307:
1303:
1288:
1281:
1277:
1228:laser diodes
1225:
1217:Applications
1208:
1199:
1193:
1186:
1139:
1107:
1090:
1087:
1084:
1081:Developments
1063:10 cm/s
1057:velocity of
1055:steady-state
1044:
978:
938:
912:
894:of 3.4
854:
850:
849:
647:
587:
554:
532:
511:Tetrahedral
495:
491:
476:
469:
462:
421:
83:Identifiers
75:Other names
33:
3628:Gallium(II)
3570:Gallium(-V)
3446:: 110–113.
3391:US8357945B2
2471:(3): 1363.
2388:(2): L205.
1882:18 February
1727:(5): 2501.
1501:2 Ga + 2 NH
1470:spintronics
1450:electronics
1418:radar in a
1165:transistors
1148:, and high
1116:(MOVPE) on
1040:dislocation
975:GaN crystal
928:arrays for
898:affords it
890:. Its wide
701:Flash point
582:Signal word
457:Space group
346:Appearance
319:Properties
169:100.042.830
5227:Categories
3593:Gallium(I)
3419:20 October
2896:(2): 153.
2749:www.ti.com
2508:(9): 713.
2345:(5): 353.
2158:20 October
1670:References
1472:material (
1211:CMOS logic
1205:CMOS logic
1173:magnetrons
1122:zinc oxide
930:satellites
926:solar cell
566:Pictograms
436:Structure
381:Insoluble
337:Molar mass
331:GaN
215:1R9CC3P9VL
142:ChemSpider
111:3D model (
100:25617-97-4
90:CAS Number
66:IUPAC name
3462:1388-2481
3322:cite book
2845:3 January
2677:0021-8979
2410:120489784
2291:31 August
2211:122191162
1848:CRC Press
1696:CRC Press
1480:Synthesis
1466:manganese
1441:Nanoscale
1432:GlobalEye
1379:AN/TPQ-37
1375:AN/TPQ-36
1371:AN/TPQ-53
1363:U.S. Army
1313:utilities
1194:GaN-on-Si
1158:microwave
1065:, with a
993:thin film
919:group III
636:P333+P313
628:P302+P352
557:labelling
525:formation
359:6.1 g/cm
5233:Nitrides
3246:: 1–31.
3213:12686996
3170:Archived
2890:Energies
2800:30 April
2530:38268864
2367:59066765
2228:Archived
1776:23227805
1756:Langmuir
1638:See also
1569:hydrogen
1565:nitrogen
1464:such as
1402:ELM-2084
1377:and the
1348:radars.
1118:sapphire
1051:velocity
997:sapphire
922:nitrides
892:band gap
884:compound
648:NFPA 704
548:Hazards
449:Wurtzite
387:Band gap
5050:
3965:nitride
3485:Bibcode
3351:Bibcode
3221:4391664
3193:Bibcode
3060:23 July
3034:23 July
3008:23 July
2982:23 July
2869:28 June
2779:11 July
2754:11 July
2695:Navitas
2657:Bibcode
2570:Bibcode
2510:Bibcode
2473:Bibcode
2433:Bibcode
2390:Bibcode
2347:Bibcode
2255:Bibcode
2191:Bibcode
2121:Bibcode
2062:Bibcode
2001:Bibcode
1944:Bibcode
1729:Bibcode
1659:Epitaxy
1621:ammonia
1579:and/or
1553:ammonia
1394:Romania
1365:funded
1144:, high
1124:, with
1067:transit
1036:nitride
1033:Gallium
1013:silicon
832:what is
830: (
759:cations
588:Warning
355:Density
182:PubChem
3750:Ga(CN)
3742:Ga(OH)
3460:
3397:
3310:
3285:
3219:
3211:
3185:Nature
2953:28 May
2675:
2528:
2408:
2365:
2209:
1854:
1797:
1774:
1702:
1611:Safety
1519:+ 2 NH
1428:Erieye
1416:X-band
1390:Latvia
1340:Radars
1295:MESFET
1291:MOSFET
1182:MESFET
1025:p-type
1021:n-type
1017:oxygen
827:verify
824:
757:Other
736:anions
734:Other
713:(SDS)
431:2.429
298:SMILES
151:105057
60:Names
3896:Ga(CH
3840:Ga(CH
3758:Ga(NO
3217:S2CID
2625:(PDF)
2526:S2CID
2406:S2CID
2363:S2CID
2207:S2CID
2032:(PDF)
1974:(PDF)
1625:MOVPE
1549:MOVPE
1248:AlGaN
1242:) or
1240:InGaN
1110:laser
1011:with
1009:doped
263:InChI
113:JSmol
4956:PbNH
4854:Ba(N
4692:Sr(N
4456:Ca(N
4277:Mg(N
4079:Be(N
4030:He(N
3908:Ga(C
3876:Ga(C
3844:COO)
3799:GaSb
3786:GaPO
3713:GaCl
3705:GaBr
3680:GaAs
3661:GaCl
3645:GaTe
3640:GaSe
3614:GaBr
3609:GaCl
3458:ISSN
3421:2022
3377:link
3328:link
3308:ISBN
3283:ISBN
3209:PMID
3062:2019
3036:2019
3010:2019
2984:2019
2955:2021
2871:2018
2847:2016
2802:2022
2781:2024
2756:2024
2673:ISSN
2610:(3).
2293:2023
2160:2022
1884:2024
1852:ISBN
1795:ISBN
1772:PMID
1700:ISBN
1619:and
1545:LEDs
1413:AESA
1409:Saab
1392:and
1361:The
1282:GaN
1266:GaN
1252:LEDs
1104:LEDs
1093:LEDs
1045:The
640:P501
632:P321
624:P280
620:P272
616:P261
602:H317
206:UNII
5210:No
5207:Md
5204:Fm
5201:Es
5198:Cf
5194:BkN
5189:CmN
5184:AmN
5179:PuN
5174:NpN
5153:PaN
5133:Ac
5130:**
5124:YbN
5119:TmN
5114:ErN
5109:HoN
5104:DyN
5099:TbN
5094:GdN
5089:EuN
5084:SmN
5079:PmN
5074:NdN
5069:PrN
5064:CeN
5059:LaN
5043:Og
5040:Ts
5037:Lv
5034:Mc
5031:Fl
5028:Nh
5025:Cn
5022:Rg
5019:Ds
5016:Mt
5013:Hs
5010:Bh
5007:Sg
5004:Db
5001:Rf
4998:Lr
4995:**
4978:Fr
4973:Rn
4970:At
4967:Po
4963:BiN
4925:Au
4922:Pt
4919:Ir
4916:Os
4891:TaN
4875:HfN
4870:LuN
4831:CsN
4824:Xe
4781:SbN
4777:Sn
4773:InN
4743:PdN
4739:Rh
4736:Ru
4733:Tc
4717:NbN
4712:ZrN
4669:RbN
4662:Kr
4658:+Br
4650:BrN
4620:+As
4616:AsN
4611:-Ge
4593:GaN
4499:CrN
4476:TiN
4471:ScN
4416:Ar
4412:+Cl
4404:ClN
4395:NCl
4308:-Si
4290:AlN
4254:NaN
4237:Ne
4056:LiN
3967:ion
3794:GaP
3774:(SO
3737:GaN
3729:GaI
3721:GaF
3685:GaH
3635:GaS
3619:GaI
3493:doi
3481:272
3448:doi
3359:doi
3347:196
3258:hdl
3248:doi
3201:doi
3189:422
2908:hdl
2898:doi
2713:EPC
2665:doi
2653:121
2578:doi
2518:doi
2481:doi
2441:doi
2398:doi
2355:doi
2320:doi
2316:239
2286:EDN
2263:doi
2199:doi
2179:1−x
2129:doi
2070:doi
2009:doi
1952:doi
1907:doi
1764:doi
1737:doi
1599:or
1567:or
1559:or
1476:).
1059:1.9
1019:to
999:or
995:on
945:THz
866:III
555:GHS
536:298
232:EPA
185:CID
29:Gan
18:GaN
5229::
5137:Th
5055:*
4983:Ra
4944:Tl
4930:Hg
4901:Re
4896:WN
4878:Hf
4866:*
4841:Ba
4820:+I
4812:IN
4797:?
4787:Te
4760:Cd
4749:Ag
4724:Mo
4722:β-
4707:YN
4679:Sr
4640:Br
4626:Se
4599:Ge
4580:Zn
4569:Cu
4558:Ni
4547:Co
4530:Fe
4514:Mn
4504:Cr
4494:VN
4481:Ti
4443:Ca
4433:KN
4381:SN
4350:SN
4330:-P
4313:PN
4296:Si
4264:Mg
4244:Na
4233:+F
4225:NF
4183:+O
4128:g-
4114:β-
4096:-B
4092:BN
4066:Be
4046:Li
4036:11
4007:HN
4002:+H
3981:NH
3856:Te
3852:Ga
3832:Se
3828:Ga
3816:Ga
3804:Ga
3770:Ga
3693:Ga
3600:Ga
3581:Ga
3577:Mg
3491:.
3479:.
3456:.
3444:97
3442:.
3438:.
3412:.
3373:}}
3369:{{
3357:.
3345:.
3324:}}
3320:{{
3256:.
3244:61
3242:.
3238:.
3215:.
3207:.
3199:.
3187:.
3053:.
3027:.
3001:.
2975:.
2963:^
2946:.
2906:.
2894:10
2892:.
2888:.
2849:.
2833:.
2819:^
2772:.
2747:.
2729:.
2711:.
2693:.
2671:.
2663:.
2651:.
2631:.
2627:.
2608:36
2606:.
2602:.
2590:^
2576:.
2566:62
2564:.
2538:^
2524:.
2516:.
2506:27
2504:.
2479:.
2469:76
2467:.
2453:^
2439:.
2429:34
2427:.
2404:.
2396:.
2386:29
2384:.
2361:.
2353:.
2343:48
2341:.
2314:.
2310:.
2284:.
2261:.
2251:76
2249:.
2205:.
2197:.
2187:40
2185:.
2177:Ga
2151:.
2127:.
2117:28
2115:.
2111:.
2097:^
2068:.
2058:36
2056:.
2052:.
2040:^
2007:.
1997:56
1995:.
1991:.
1950:.
1938:.
1903:36
1901:.
1874:.
1770:.
1760:29
1758:.
1735:.
1725:96
1723:.
1678:^
1587:.
1511:Ga
1430:,
1426:,
1315:.
1244:Al
1236:In
1100:.
963:.
961:DC
954:AC
936:.
910:.
896:eV
857:Ga
719:,
638:,
634:,
630:,
626:,
622:,
618:,
559::
528:(Δ
477:mc
466:6v
305:#N
5167:y
5164:N
5161:x
5158:U
5146:y
5143:N
5140:x
4989:2
4987:N
4985:3
4958:)
4954:(
4948:N
4946:3
4936:2
4934:N
4932:3
4910:y
4907:N
4904:x
4884:4
4882:N
4880:3
4860:2
4858:)
4856:3
4847:2
4845:N
4843:3
4833:3
4814:3
4806:N
4804:3
4802:I
4793:4
4791:N
4789:4
4766:2
4764:N
4762:3
4753:N
4751:3
4728:N
4726:2
4698:2
4696:)
4694:3
4685:2
4683:N
4681:3
4671:3
4652:3
4644:N
4642:3
4632:4
4630:N
4628:4
4605:4
4603:N
4601:3
4586:2
4584:N
4582:3
4573:N
4571:3
4562:N
4560:3
4551:N
4549:3
4539:y
4536:N
4533:x
4523:y
4520:N
4517:x
4508:N
4506:2
4487:4
4485:N
4483:3
4462:2
4460:)
4458:3
4449:2
4447:N
4445:3
4435:3
4427:N
4425:3
4423:K
4406:3
4397:3
4387:2
4385:H
4383:2
4374:4
4372:N
4370:4
4368:S
4361:2
4359:N
4357:2
4355:S
4344:y
4341:N
4338:x
4335:S
4324:5
4322:N
4320:3
4318:P
4302:4
4300:N
4298:3
4283:2
4281:)
4279:3
4270:2
4268:N
4266:3
4256:3
4248:N
4246:3
4227:3
4218:4
4216:F
4214:2
4212:N
4205:2
4203:F
4201:2
4199:N
4193:F
4191:3
4189:N
4177:y
4174:O
4171:x
4168:N
4161:2
4159:N
4151:y
4148:N
4145:x
4142:C
4136:4
4134:N
4132:3
4130:C
4122:4
4120:N
4118:3
4116:C
4108:2
4106:N
4104:2
4102:C
4085:2
4083:)
4081:3
4072:2
4070:N
4068:3
4058:3
4050:N
4048:3
4034:)
4032:2
4017:N
4015:2
4013:H
3996:4
3994:H
3992:2
3990:N
3983:3
3956:e
3949:t
3942:v
3918:3
3916:)
3914:5
3912:H
3910:2
3902:3
3900:)
3898:3
3890:3
3888:)
3886:2
3884:O
3882:7
3880:H
3878:5
3858:3
3854:2
3846:3
3842:3
3834:3
3830:2
3822:3
3820:S
3818:2
3810:3
3808:O
3806:2
3788:4
3780:3
3778:)
3776:4
3772:2
3764:3
3762:)
3760:3
3752:3
3744:3
3731:3
3723:3
3715:3
3707:3
3699:6
3697:H
3695:2
3687:3
3663:2
3604:O
3602:2
3583:2
3579:5
3555:e
3548:t
3541:v
3499:.
3495::
3487::
3464:.
3450::
3423:.
3379:)
3365:.
3361::
3353::
3330:)
3316:.
3291:.
3266:.
3260::
3250::
3223:.
3203::
3195::
3064:.
3038:.
3012:.
2986:.
2957:.
2916:.
2910::
2900::
2873:.
2804:.
2783:.
2758:.
2733:.
2715:.
2697:.
2679:.
2667::
2659::
2633:9
2584:.
2580::
2572::
2532:.
2520::
2512::
2487:.
2483::
2475::
2447:.
2443::
2435::
2412:.
2400::
2392::
2369:.
2357::
2349::
2326:.
2322::
2295:.
2269:.
2265::
2257::
2213:.
2201::
2193::
2175:x
2162:.
2137:.
2131::
2123::
2078:.
2072::
2064::
2034:.
2011::
2003::
1958:.
1954::
1946::
1940:8
1913:.
1909::
1886:.
1860:.
1803:.
1778:.
1766::
1743:.
1739::
1731::
1708:.
1527:O
1525:2
1521:3
1517:3
1515:O
1513:2
1507:2
1503:3
1495:2
1491:2
1274:)
1246:(
1238:(
1061:×
870:V
868:/
860:N
853:(
822:Y
689:0
682:0
675:2
538:)
533:H
530:f
496:c
492:a
474:3
472:6
470:P
468:-
463:C
427:)
425:D
422:n
420:(
310:.
234:)
230:(
115:)
31:.
20:)
Text is available under the Creative Commons Attribution-ShareAlike License. Additional terms may apply.
