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biomass, and so on) for the last decade. However, GaAs solar cells have not currently been adopted for widespread solar electricity generation. This is largely due to the cost of GaAs solar cells - in space applications, high performance is required and the corresponding high cost of the existing GaAs technologies is accepted. For example, GaAs-based photovoltaics show the best resistance to gamma radiation and high temperature fluctuations, which are of great importance for spacecraft. But in comparison to other solar cells, III-V solar cells are two to three orders of magnitude more expensive than other technologies such as silicon-based solar cells. The primary sources of this cost are the
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1881:-type GaAs has a high refractive index (~3.5) and the narrow-beam absorption coefficient is proportional to the free electron density and typically several per cm. One would expect that almost all of the scintillation photons should be trapped and absorbed in the crystal, but this is not the case. Recent Monte Carlo and Feynman path integral calculations have shown that the high luminosity could be explained if most of the narrow beam absorption is not absolute absorption but a
1835:
719:
1956:, and it is considered a known carcinogen in animals. On the other hand, a 2013 review (funded by industry) argued against these classifications, saying that when rats or mice inhale fine GaAs powders (as in previous studies), they get cancer from the resulting lung irritation and inflammation, rather than from a primary carcinogenic effect of the GaAs itselfâand that, moreover, fine GaAs powders are unlikely to be created in the production or use of GaAs.
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1628:
811:
1848:-type GaAs doped with silicon donor atoms (on Ga sites) and boron acceptor atoms (on As sites) responds to ionizing radiation by emitting scintillation photons. At cryogenic temperatures it is among the brightest scintillators known and is a promising candidate for detecting rare electronic excitations from interacting dark matter, due to the following six essential factors:
1748:
followed by a layer of either GaAs or GaInAs with a minimal mismatch, and the last layer has the greatest lattice mismatch. After growth, the cell is mounted to a secondary handle and the GaAs substrate is removed. A main advantage of the IMM process is that the inverted growth according to lattice mismatch allows a path to higher cell efficiency.
724:
1794:(HVPE). A significant reduction in costs for these methods would require improvements in tool costs, throughput, material costs, and manufacturing efficiency. Increasing the deposition rate could reduce costs, but this cost reduction would be limited by the fixed times in other parts of the process such as cooling and heating.
1778:
Despite GaAs-based photovoltaics being the clear champions of efficiency for solar cells, they have relatively limited use in today's market. In both world electricity generation and world electricity generating capacity, solar electricity is growing faster than any other source of fuel (wind, hydro,
1727:
GaAs-based devices hold the world record for the highest-efficiency single-junction solar cell at 29.1% (as of 2019). This high efficiency is attributed to the extreme high quality GaAs epitaxial growth, surface passivation by the AlGaAs, and the promotion of photon recycling by the thin film design.
1558:
interface can be easily engineered to have excellent electrical properties, most importantly low density of interface states. GaAs does not have a native oxide, does not easily support a stable adherent insulating layer, and does not possess the dielectric strength or surface passivating qualities of
1129:
to near the center of the band gap, so that this GaAs crystal has very low concentration of electrons and holes. This low carrier concentration is similar to an intrinsic (perfectly undoped) crystal, but much easier to achieve in practice. These crystals are called "semi-insulating", reflecting their
1871:
After trapping an ionization event hole from the valence band, the boron acceptors can combine radiatively with delocalized donor electrons to produce photons 0.2 eV below the cryogenic band-gap energy (1.52 eV). This is an efficient radiative process that produces scintillation photons that are not
1747:
unveiled a solar cell with 33.3% efficiency based on inverted metamorphic multi-junction (IMM) technology. In IMM, the lattice-matched (same lattice parameters) materials are grown first, followed by mismatched materials. The top cell, GaInP, is grown first and lattice matched to the GaAs substrate,
1894:-type GaAs(Si,B) is commercially grown as 10 kg crystal ingots and sliced into thin wafers as substrates for electronic circuits. Boron oxide is used as an encapsulant to prevent the loss of arsenic during crystal growth, but also has the benefit of providing boron acceptors for scintillation.
1887:
type of optical scattering from the conduction electrons with a cross section of about 5 x 10 cm that allows scintillation photons to escape total internal reflection. This cross section is about 10 times larger than
Thomson scattering but comparable to the optical cross section of the conduction
1604:
for sunlight, meaning about 100 micrometers of Si is needed to absorb most sunlight. Such a layer is relatively robust and easy to handle. In contrast, the absorptivity of GaAs is so high that only a few micrometers of thickness are needed to absorb all of the light. Consequently, GaAs thin films
1797:
The substrate used to grow these solar cells is usually germanium or gallium arsenide which are notably expensive materials. One of the main pathways to reduce substrate costs is to reuse the substrate. An early method proposed to accomplish this is epitaxial lift-off (ELO), but this method is
1903:
For this purpose an optical fiber tip of an optical fiber temperature sensor is equipped with a gallium arsenide crystal. Starting at a light wavelength of 850 nm GaAs becomes optically translucent. Since the spectral position of the band gap is temperature dependent, it shifts about
722:
1349:(disturbance in an electrical signal) in electronic circuits than silicon devices, especially at high frequencies. This is a result of higher carrier mobilities and lower resistive device parasitics. These superior properties are compelling reasons to use GaAs circuitry in
4186:
1822:. Concentrators use lenses or parabolic mirrors to focus light onto a solar cell, and thus a smaller (and therefore less expensive) GaAs solar cell is needed to achieve the same results. Concentrator systems have the highest efficiency of existing photovoltaics.
1518:
and processed with very good yields. It is also a fairly good thermal conductor, thus enabling very dense packing of transistors that need to get rid of their heat of operation, all very desirable for design and manufacturing of very large
1867:
Boron and gallium are group III elements, so boron as an impurity primarily occupies the gallium site. However, a sufficient number occupy the arsenic site and act as acceptors that efficiently trap ionization event holes from the valence
1825:
So, technologies such as concentrator photovoltaics and methods in development to lower epitaxial growth and substrate costs could lead to a reduction in the cost of GaAs solar cells and forge a path for use in terrestrial applications.
1904:
0.4 nm/K. The measurement device contains a light source and a device for the spectral detection of the band gap. With the changing of the band gap, (0.4 nm/K) an algorithm calculates the temperature (all 250 ms).
1615:
in commercial production as of 2020). In contrast, GaAs has a very high impurity density, which makes it difficult to build integrated circuits with small structures, so the 500 nm process is a common process for GaAs.
1345:, allowing gallium arsenide transistors to function at frequencies in excess of 250 GHz. GaAs devices are relatively insensitive to overheating, owing to their wider energy band gap, and they also tend to create less
1814:
could be used to remove the substrate for reuse. An alternative path to reduce substrate cost is to use cheaper materials, although materials for this application are not currently commercially available or developed.
4024:
S. E. Derenzo (2023), âFeynman photon path integral calculations of optical reflection, diffraction, and scattering from conduction electrons,â Nuclear
Instruments and Methods, vol. A1056, pp. 168679. arXiv2309.09827
1704:
layers were developed as the basis of a triple-junction solar cell, which held a record efficiency of over 32% and can operate also with light as concentrated as 2,000 suns. This kind of solar cell powered the
2687:
Yin, Jun; Migas, Dmitri B.; Panahandeh-Fard, Majid; Chen, Shi; Wang, Zilong; Lova, Paola; Soci, Cesare (3 October 2013). "Charge
Redistribution at GaAs/P3HT Heterointerfaces with Different Surface Polarity".
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logic. Because they lack a fast CMOS structure, GaAs circuits must use logic styles which have much higher power consumption; this has made GaAs logic circuits unable to compete with silicon logic circuits.
2569:
3726:
S.E. Derenzo (2024), "Monte Carlo calculations of cryogenic photodetector readout of scintillating GaAs for dark matter detection", arXiv: 2409.00504, Nuclear Instr. and
Methods in Physics Research, A1068
640:
4110:"Chemicals Listed Effective August 1, 2008 as Known to the State of California to Cause Cancer or Reproductive Toxicity: gallium arsenide, hexafluoroacetone, nitrous oxide and vinyl cyclohexene dioxide"
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Today, multi-junction GaAs cells have the highest efficiencies of existing photovoltaic cells and trajectories show that this is likely to continue to be the case for the foreseeable future. In 2022,
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612:
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mission, launched in 1965. The GaAs solar cells, manufactured by Kvant, were chosen because of their higher performance in high temperature environments. GaAs cells were then used for the
1121:; specifically, arsenic antisite defects (an arsenic atom at a gallium atom site within the crystal lattice). The electronic properties of these defects (interacting with others) cause the
1383:
As a wide direct band gap material with resulting resistance to radiation damage, GaAs is an excellent material for outer space electronics and optical windows in high power applications.
2829:
Schnitzer, I.; et al. (1993). "Ultrahigh spontaneous emission quantum efficiency, 99.7 % internally and 72 % externally, from AlGaAs/GaAs/AlGaAs double heterostructures".
723:
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Derenzo, S.; Bourret, E.; Frank-Rotsch, C.; Hanrahan, S.; Garcia-Sciveres, M. (2021). "How silicon and boron dopants govern the cryogenic scintillation properties of N-type GaAs".
1875:
There is no afterglow, because metastable radiative centers are quickly annihilated by the delocalized electrons. This is evidenced by the lack of thermally induced luminescence.
1527:. Naturally, a GaAs surface cannot withstand the high temperatures needed for diffusion; however a viable and actively pursued alternative as of the 1980s was ion implantation.
1306:
3620:
Vasiukov, S.; Chiossi, F.; Braggio, C.; et al. (2019). "GaAs as a Bright
Cryogenic Scintillator for the Detection of Low-Energy Electron Recoils From MeV/c Dark Matter".
944:(LEC) growth is used for producing high-purity single crystals that can exhibit semi-insulating characteristics (see below). Most GaAs wafers are produced using this process.
4061:
2907:
4074:
Shenai-Khatkhate, D V; Goyette, R; DiCarlo, R L; Dripps, G (2004). "Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors".
3556:
Derenzo, S.; Bourret, E.; Hanrahan, S.; Bizarri, G. (2018-03-21). "Cryogenic scintillation properties of n -type GaAs for the direct detection of MeV/c2 dark matter".
1802:), and requires multiple post-processing steps. However, other methods have been proposed that use phosphide-based materials and hydrochloric acid to achieve ELO with
1316:
1300:
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M. K. Pogodaeva, S. V. Levchenko, V. P. Drachev, and I. R. Gabitov, 3032, âDielectric function of six elemental metals,â J. Phys.: Conf. Ser., vol. 1890, pp. 012008.
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1921:
4170:"NTP Technical Report On The Toxicology And Carcinogenesis Studies Of Gallium Arsenide (Cas No. 1303-00-0) In F344/N Rats And B6c3f1 Mice (Inhalation Studies)"
1842:
GaAs has been used to produce near-infrared laser diodes since 1962. It is often used in alloys with other semiconductor compounds for these applications.
1283:
4042:
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6224:
2093:
Blakemore, J. S. "Semiconducting and other major properties of gallium arsenide", Journal of
Applied Physics, (1982) vol 53 Nr 10 pages R123-R181
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Silicon has three major advantages over GaAs for integrated circuit manufacture. First, silicon is abundant and cheap to process in the form of
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PapeĆŸ, Nikola; GajdoĆĄ, Adam; Dallaev, Rashid; Sobola, Dinara; SedlĂĄk, Petr; MotĂșz, Rastislav; Nebojsa, Alois; Grmela, LubomĂr (2020-04-30).
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1949:
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Bomhard, E. M.; Gelbke, H.; Schenk, H.; Williams, G. M.; Cohen, S. M. (2013). "Evaluation of the carcinogenicity of gallium arsenide".
2603:
2011:
2215:"Chemical vapor deposition from single organometallic precursors" A. R. Barron, M. B. Power, A. N. MacInnes, A. F.Hepp, P. P. Jenkins
1688:, achieving much higher efficiencies. In the early 1980s, the efficiency of the best GaAs solar cells surpassed that of conventional,
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high resistivity of 10â10 Ω·cm (which is quite high for a semiconductor, but still much lower than a true insulator like glass).
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Oxidation of GaAs occurs in air, degrading performance of the semiconductor. The surface can be passivated by depositing a cubic
881:
4043:
A New Fiber
Optical Thermometer and Its Application for Process Control in Strong Electric, Magnetic, and Electromagnetic Fields
6218:
2423:
1542:. Silicon dioxide can be incorporated onto silicon circuits easily, and such layers are adherent to the underlying silicon. SiO
3676:
Nuclear
Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
1146:
water, and the same strategy has been described in a patent relating to processing scrap components containing GaAs where the
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Alferov, Zh. I., V. M. Andreev, M. B. Kagan, I. I. Protasov and V. G. Trofim, 1970, ââSolar-energy converters based on p-n Al
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1480:, which allows them to be grown almost arbitrarily thick. This allows extremely high performance and high electron mobility
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are also responsible for the highest efficiency (as of 2022) of conversion of light to electricity, as researchers from the
819:
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3831:
Spitzer, W. G.; Whelan, J. M. (1959-04-01). "Infrared
Absorption and Electron Effective Mass in n -Type Gallium Arsenide".
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1619:
Silicon has about three times the thermal conductivity of GaAs, with less risk of local overheating in high power devices.
937:, in which gallium and arsenic vapors react, and free molecules deposit on a seed crystal at the cooler end of the furnace.
1588:
mobility compared to GaAs (500 versus 400 cmVs). This high mobility allows the fabrication of higher-speed P-channel
30:
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Silicon has a nearly perfect lattice; impurity density is very low and allows very small structures to be built (down to
1414:
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2175:
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4175:. U.S. Department Of Health And Human Services: Public Health Service: National Institutes of Health. September 2000.
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Yamaguchi, Masafumi (2021-04-14), Muzibur Rahman, Mohammed; Mohammed Asiri, Abdullah; Khan, Anish; Inamuddin (eds.),
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Band structure of GaAs. The direct gap of GaAs results in efficient emission of infrared light at 1.424 eV (~870 nm).
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Gallium arsenide (GaAs) transistors are used in the RF power amplifiers for cell phones and wireless communicating.
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1469:
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2275:"Oxidative dissolution of gallium arsenide and separation of gallium from arsenic" J. P. Coleman and B. F. Monzyk
1692:-based solar cells. In the 1990s, GaAs solar cells took over from silicon as the cell type most commonly used for
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and unlike Si provides natural isolation between devices and circuits. This has made it an ideal material for
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866:
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Derenzo, Stephen E. (2022). "Monte Carlo calculations of the extraction of scintillation light from cryogenic
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Benzaquen, M.; Walsh, D.; Mazuruk, K. (1987-09-15). "Conductivity of n -type GaAs near the Mott transition".
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GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including
3335:
Metaferia, Wondwosen; Chenenko, Jason; Packard, Corinne E.; Ptak, Aaron J.; Schulte, Kevin L. (2021-06-20).
1523:. Such good mechanical characteristics also make it a suitable material for the rapidly developing field of
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Cheng, Cheng-Wei; Shiu, Kuen-Ting; Li, Ning; Han, Shu-Jen; Shi, Leathen; Sadana, Devendra K. (2013-03-12).
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Wang, X.; et al. (2013). "Design of GaAs Solar Cells
Operating Close to the ShockleyâQueisser Limit".
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Silicon is a pure element, avoiding the problems of stoichiometric imbalance and thermal unmixing of GaAs.
1410:
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238:
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1398:(MMICs), where active and essential passive components can readily be produced on a single slice of GaAs.
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than their silicon counterparts, but were more expensive. Other GaAs processors were implemented by the
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2381:"Atomic-Layer Deposited High-k/III-V Metal-Oxide-Semiconductor Devices and Correlated Empirical Model"
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Lova, Paola; Robbiano, Valentina; Cacialli, Franco; Comoretto, Davide; Soci, Cesare (3 October 2018).
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1953:
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2908:"Record Efficiency of 68.9% for GaAs Thin Film Photovoltaic Cell Under Laser Light - Fraunhofer ISE"
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residues and allows for direct reuse of the GaAs substrate. There is also preliminary evidence that
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1445:, but the effort was not adequately capitalized, and the company filed for bankruptcy in 1995.
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Sturge, M. D. (1962-08-01). "Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eV".
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In addition, a Si crystal has a very stable structure and can be grown to very large diameter
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Silicon donor electrons in GaAs have a binding energy that is among the lowest of all known
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GaAs solar cells are most commonly fabricated utilizing epitaxial growth techniques such as
1696:
for satellite applications. Later, dual- and triple-junction solar cells based on GaAs with
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3272:"Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics"
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3337:"(110)-Oriented GaAs Devices and Spalling as a Platform for Low-Cost III-V Photovoltaics"
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Gallium arsenide is an important semiconductor material for high-cost, high-efficiency
1601:
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1391:
1376:, which means that it can be used to absorb and emit light efficiently. Silicon has an
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2515:(2nd ed.). Chichester, West Sussex, England: John Wiley & Sons. p. 137.
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PĂ€tzold, O.; GĂ€rtner, G.; Irmer, G. (2002). "Boron Site Distribution in Doped GaAs".
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Horowitz, Kelsey A.; Remo, Timothy W.; Smith, Brittany; Ptak, Aaron J. (2018-11-27).
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microprocessor. Cray eventually built one GaAs-based machine in the early 1990s, the
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photovoltaic cell to monochromatic laser light with a wavelength of 858 nanometers.
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Philipps, Simon P.; Bett, Andreas W.; Horowitz, Kelsey; Kurtz, Sarah (2015-12-01).
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1417:. These processors were several times faster and several orders of magnitude more
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Because of its wide band gap, pure GaAs is highly resistive. Combined with a high
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The environment, health and safety aspects of gallium arsenide sources (such as
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In 1970, the GaAs heterostructure solar cells were developed by the team led by
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Osamura, Kozo; Murakami, Yotaro (1972). "Free Carrier Absorption in n -GaAs".
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PapeĆŸ, Nikola; Dallaev, Rashid; ĆąÄlu, Ćtefan; KaĆĄtyl, Jaroslav (2021-06-04).
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3163:"A Techno-Economic Analysis and Cost Reduction Roadmap for III-V Solar Cells"
3132:
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2946:
2424:"What Are the Applications of Gallium Arsenide Semiconductors? | Wafer World"
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per cm are not âfrozen out" and remain delocalized at cryogenic temperatures.
1729:
1585:
1577:) has been extensively studied as a possible gate oxide for GaAs (as well as
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862:
407:
146:
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3628:(11). Institute of Electrical and Electronics Engineers (IEEE): 2333â2337.
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3052:"Global Progress Toward Renewable Electricity: Tracking the Role of Solar"
2484:"A reprieve for Moore's Law: milspec chip writes computing's next chapter"
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available to the silicon industry has also hindered the adoption of GaAs.
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The first known operational use of GaAs solar cells in space was for the
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542:
3938:
3512:; Fenner, G. E.; Kingsley, J. D.; Soltys, T. J.; Carlson, R. O. (1962).
3101:"Performance analysis of GaAs based solar cells under gamma irradiation"
2446:
1333:
Some electronic properties of gallium arsenide are superior to those of
732:
3414:
3296:
3271:
3221:
Konagai, Makoto; Sugimoto, Mitsunori; Takahashi, Kiyoshi (1978-12-01).
3011:"Inverted Metamorphic Multijunction (IMM) Cell Processing Instructions"
2670:"It's a GaAS: Critical Component for Cell Phone Circuits Grows in 2010"
1945:
1834:
1744:
1655:
1362:
1319:(DCFL) simplest and lowest power (used by Vitesse for VLSI gate arrays)
739:
694:
429:
369:
166:
126:
3810:
10.1002/1521-3951(200208)232:2<314::AID-PSSB314>3.0.CO;2-#
3587:
3474:
3366:
3223:"High efficiency GaAs thin film solar cells by peeled film technology"
3178:
2828:
2806:"Hubble's Instruments Including Control and Support Systems (Cutaway)"
2701:
1944:
precursors have been reported. California lists gallium arsenide as a
4410:
4210:
3390:"Overview of the Current State of Gallium Arsenide-Based Solar Cells"
3162:
2850:
2716:
1737:
1697:
1635:
1530:
The second major advantage of Si is the existence of a native oxide (
1366:
873:
258:
4650:
4249:
3465:
3456:
3170:
2604:"'Better Yield on 5nm than 7nm': TSMC Update on Defect Rates for N5"
1357:
communications, microwave point-to-point links and higher frequency
801:
Except where otherwise noted, data are given for materials in their
5100:
4690:
3986:
3688:
3570:
1917:
1811:
1670:
1547:
1504:
1448:
Complex layered structures of gallium arsenide in combination with
885:
847:
705:
455:
444:
3673:
1818:
Yet another consideration to lower GaAs solar cell costs could be
698:
114:
107:
5400:
4963:
4681:
4402:
1780:
1334:
1303:(SCFL) fastest and most complex, (used by TriQuint & Vitesse)
1143:
1138:
Wet etching of GaAs industrially uses an oxidizing agent such as
1051:
1047:
844:
740:
448:
440:
397:
198:
5119:
4904:
2451:
Processor architecture: from dataflow to superscalar and beyond
2036:
1976:
1937:
1442:
1310:
993:
872:
Gallium arsenide is used in the manufacture of devices such as
686:
3457:"Current Status of Concentrator Photovoltaic (CPV) Technology"
3974:
Nuclear Instruments and Methods in Physics Research Section A
3619:
3555:
2290:
2190:
2165:
2042:
1584:
The third advantage of silicon is that it possesses a higher
1358:
985:
856:
222:
97:
6120:
5069:
3334:
2250:
1627:
274:
4585:
2985:"Rocket Lab unveils space solar cell with 33.3% efficiency"
2715:
Strobl, G.F.X.; LaRoche, G.; Rasch, K.-D.; Hey, G. (2009).
2686:
1764:
1724:
utilize GaAs in solar arrays, as did the Hubble Telescope.
1717:
1685:
1593:
1438:
1426:
1086:
layer using a tert-butyl gallium sulfide compound such as (
387:
3009:
Duda, Anna; Ward, Scott; Young, Michelle (February 2012).
2721:
High-Efficient Low-Cost Photovoltaics: Recent Developments
1600:
For manufacturing solar cells, silicon has relatively low
1323:
4240:
Physical properties of gallium arsenide (Ioffe Institute)
3454:
3341:
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)
1406:
948:
Alternative methods for producing films of GaAs include:
779:
4235:
Case Studies in Environmental Medicine: Arsenic Toxicity
3220:
3098:
1491:
GaAs is used for monolithic radar power amplifiers (but
2350:
3387:
3343:. Fort Lauderdale, FL, USA: IEEE. pp. 1118â1120.
2717:"2: From Extraterrestrial to Terrestrial Applications"
2140:
1898:
933:
Crystal growth using a horizontal zone furnace in the
3736:
3160:
2447:Ć ilc, Von Jurij; RobiÄ, Borut; Ungerer, Theo (1999).
2379:
Ye, Peide D.; Xuan, Yi; Wu, Yanqing; Xu, Min (2010).
1773:
1770:
GaAs diodes can be used for the detection of X-rays.
1390:, this property makes GaAs a very good substrate for
3615:
3613:
3040:. Ppewww.physics.gla.ac.uk. Retrieved on 2013-10-16.
2871:
2779:. im.isu.edu.tw. 16 November 2005 (in Chinese) p. 24
1798:
time-consuming, somewhat dangerous (with its use of
1472:(MOVPE). Because GaAs and AlAs have almost the same
3787:
3669:
3667:
3551:
3549:
2506:
2504:
2230:McCluskey, Matthew D. and Haller, Eugene E. (2012)
664:
4202:
2448:
1783:costs and the substrate the cell is deposited on.
1437:in an attempt to stay ahead of the ever-improving
3610:
2912:Fraunhofer Institute for Solar Energy Systems ISE
2630:Encyclopedia of Materials: Science and Technology
1736:achieved a 68.9% efficiency when exposing a GaAs
1269:Metalâoxideâsemiconductor field-effect transistor
6308:
4245:Facts and figures on processing gallium arsenide
4036:
3664:
3546:
3156:
3154:
3152:
3150:
2513:An Introduction To Semiconductor Microtechnology
2501:
2478:
2476:
210:
6225:Vertical-external-cavity surface-emitting-laser
3916:
2293:"Black GaAs by Metal-Assisted Chemical Etching"
1940:) and industrial hygiene monitoring studies of
1361:systems. It is also used in the manufacture of
1240:GaAs can be used for various transistor types:
926:can be prepared by three industrial processes:
721:
83:
3269:
3062:(6) (published 20 September 2021): 1335â1342.
2627:Schlesinger, T.E. (2001). "Gallium Arsenide".
660:
6118:
6104:
5085:
4666:
4265:
3830:
3514:"Coherent Light Emission From GaAs Junctions"
3147:
3050:Haegel, Nancy; Kurtz, Sarah (November 2021).
3008:
2473:
2346:
2344:
2342:
2039:(metalâsemiconductor field-effect transistor)
1734:Fraunhofer Institute for Solar Energy Systems
1380:and so is relatively poor at emitting light.
2537:Semiconductor Devices Physics and Technology
2087:
1649:
913:
412:1,238 °C (2,260 °F; 1,511 K)
4064:. compoundsemiconductor.net. September 2014
3049:
2626:
2510:
2385:Fundamentals of III-V Semiconductor MOSFETs
2143:The Chemistry of the Semiconductor Industry
1856:-type semiconductors. Free electrons above
1605:must be supported on a substrate material.
1372:Another advantage of GaAs is that it has a
1296:to 1995 the main logic families used were:
1245:Metalâsemiconductor field-effect transistor
1108:
930:The vertical gradient freeze (VGF) process.
16:"GaAs" redirects here. For other uses, see
6151:Separate confinement heterostructure laser
6111:
6097:
5092:
5078:
4673:
4659:
4272:
4258:
4121:
4119:
3038:Glasgow University report on CERN detector
2383:. In Oktyabrsky, Serge; Ye, Peide (eds.).
2378:
2339:
2012:Heterostructure emitter bipolar transistor
289:
156:
134:
3985:
3687:
3569:
3537:
3464:
3431:
3413:
3295:
3246:
3067:
2945:
2931:
2690:The Journal of Physical Chemistry Letters
2354:Gallium Arsenide IC Applications Handbook
1907:
1829:
1495:can be less susceptible to heat damage).
246:
2934:"High-Efficiency GaAs-Based Solar Cells"
2191:Smart, Lesley; Moore, Elaine A. (2005).
2166:Scheel, Hans J.; Tsuguo Fukuda. (2003).
1833:
1763:can be sensitive to infrared radiation (
1626:
1405:was developed in the early 1980s by the
1396:monolithic microwave integrated circuits
1113:In the presence of excess arsenic, GaAs
882:monolithic microwave integrated circuits
4116:
4062:GaAs forms basis of tunable spintronics
3967:
2567:
2251:Brozel, M. R.; Stillman, G. E. (1996).
2224:
1788:metal-organic chemical vapor deposition
1409:Corporation and was considered for the
1324:Comparison with silicon for electronics
285:
188:
6309:
6219:Vertical-cavity surface-emitting laser
3873:
2297:ACS Applied Materials & Interfaces
2193:Solid State Chemistry: An Introduction
2136:
2134:
2132:
2122:
2120:
2110:
2108:
1476:, the layers have very little induced
955:reaction of gaseous gallium metal and
147:
6092:
5073:
4680:
4654:
4279:
4253:
4206:CRC Handbook of Chemistry and Physics
4187:"Safety Data Sheet: Gallium Arsenide"
2777:Nanotechnology in energy applications
2539:. John Wiley & Sons. Appendix G.
2418:
2416:
2389:Springer Science & Business Media
2357:. Vol. 1. Elsevier. p. 61.
2232:Dopants and Defects in Semiconductors
2080:
2078:
2076:
2074:
1622:
1546:is not only a good insulator (with a
1498:
1235:
317:Key: SHVQQKYXGUBHBI-UHFFFAOYSA-N
3622:IEEE Transactions on Nuclear Science
3018:National Renewable Energy Laboratory
3919:Japanese Journal of Applied Physics
2601:
2549:
2129:
2117:
2105:
2096:
1899:Fiber optic temperature measurement
1658:and is used for single-crystalline
1415:United States Department of Defense
201:
13:
2413:
2351:Dennis Fisher; I. J. Bahl (1995).
2071:
1774:Future outlook of GaAs solar cells
1641:
1328:
1282:The earliest GaAs logic gate used
918:In the compound, gallium has a +3
717:
14:
6373:
6157:Distributed Bragg reflector laser
4228:
2511:Morgan, D. V.; Board, K. (1991).
2141:Moss, S. J.; Ledwith, A. (1987).
1263:Heterojunction bipolar transistor
1251:High-electron-mobility transistor
6119:
4203:Haynes, William M., ed. (2011).
4196:
2633:. Elsevier. pp. 3431â3435.
1470:metalorganic vapor-phase epitaxy
1257:Junction field-effect transistor
809:
630:
38:
29:
6296:List of semiconductor materials
4179:
4162:
4102:
4067:
4055:
4052:. optocon.de (PDF; 2,5 MB)
4027:
4018:
3961:
3910:
3867:
3824:
3781:
3730:
3720:
3502:
3448:
3381:
3328:
3263:
3214:
3092:
3043:
3031:
3002:
2977:
2925:
2900:
2865:
2822:
2798:
2782:
2770:
2745:
2708:
2680:
2662:
2620:
2595:
2571:Electronic Devices and Circuits
2561:
2529:
2440:
2372:
2284:
2269:
2244:
805:(at 25 °C , 100 kPa).
45:GaAs wafer of (100) orientation
6357:Light-emitting diode materials
4128:Critical Reviews in Toxicology
4096:10.1016/j.jcrysgro.2004.09.007
3349:10.1109/PVSC43889.2021.9518754
2639:10.1016/B0-08-043152-6/00612-4
2253:Properties of Gallium Arsenide
2209:
2184:
2159:
1912:GaAs may have applications in
1230:
935:Bridgman-Stockbarger technique
1:
5099:
3056:IEEE Journal of Photovoltaics
2874:IEEE Journal of Photovoltaics
2065:
1916:as it can be used instead of
1872:absorbed by the GaAs crystal.
1290:
6362:Zincblende crystal structure
6145:Double heterostructure laser
5118:
4587:Organogallium(III) compounds
4189:. Sigma-Aldrich. 2015-02-28.
4140:10.3109/10408444.2013.792329
3248:10.1016/0022-0248(78)90449-9
3125:10.1016/j.apsusc.2020.145329
3069:10.1109/JPHOTOV.2021.3104149
2886:10.1109/JPHOTOV.2013.2241594
2556:Single-Crystalline Thin Film
1888:electrons in a metal mirror.
314:InChI=1S/AsH3.Ga.3H/h1H3;;;;
7:
2759:As-GaAs heterojunctions,ââ
2397:10.1007/978-1-4419-1547-4_7
2369:'Clear search' to see pages
1959:
1792:hydride vapor phase epitaxy
1339:saturated electron velocity
392:garlic-like when moistened
374:144.645 g/mol
10:
6378:
6268:Laser diode rate equations
6263:Semiconductor laser theory
6163:Distributed-feedback laser
4004:10.1016/j.nima.2022.166803
3706:10.1016/j.nima.2020.164957
3558:Journal of Applied Physics
2991:(in Korean). 10 March 2022
1997:Gallium manganese arsenide
1992:Gallium arsenide phosphide
1972:Aluminium gallium arsenide
1820:concentrator photovoltaics
1664:multi-junction solar cells
1277:integrated injection logic
1133:
15:
6276:
6255:
6211:
6194:
6131:
6070:
6054:
6030:
5981:
5769:
5107:
5012:
4987:
4865:
4689:
4390:
4371:
4345:
4310:
4287:
4076:Journal of Crystal Growth
3790:Physica Status Solidi (B)
3539:10.1103/PhysRevLett.9.366
3227:Journal of Crystal Growth
2761:Fiz. Tekh. Poluprovodn. 4
2729:10.1007/978-3-540-79359-5
2558:. US Department of Energy
2168:Crystal Growth Technology
1927:
1924:and may be more tunable.
1650:Solar cells and detectors
1592:, which are required for
1309:(CDFL) (used by Cray for
1307:Capacitorâdiode FET logic
1186:+ "HA" â "GaA" complex +
914:Preparation and chemistry
908:aluminum gallium arsenide
799:
771:
611:
606:
521:
497:0.56 W/(cm·K) (at 300 K)
470:9000 cm/(V·s) (at 300 K)
351:
326:
301:
67:
55:
50:
37:
28:
6332:IARC Group 1 carcinogens
6242:Semiconductor ring laser
3759:10.1103/PhysRevB.36.4748
3642:10.1109/tns.2019.2946725
2947:10.5772/intechopen.94365
2048:Multijunction solar cell
1702:indium gallium phosphide
1590:field-effect transistors
1317:Direct-coupled FET logic
1301:Source-coupled FET logic
1119:crystallographic defects
1109:Semi-insulating crystals
677:Precautionary statements
6236:Interband cascade laser
3896:10.1103/PhysRev.127.768
3518:Physical Review Letters
3105:Applied Surface Science
2831:Applied Physics Letters
2795:at nobelprize.org, p. 6
2568:Cabrera, Rowan (2019).
2022:Indium gallium arsenide
1707:Mars Exploration Rovers
1538:), which is used as an
1275:The HBT can be used in
1223:This reaction produces
904:indium gallium arsenide
577: = 565.315 pm
477:Magnetic susceptibility
3853:10.1103/PhysRev.114.59
3490:Cite journal requires
3202:Cite journal requires
2938:Post-Transition Metals
2765:Sov. Phys. Semicond. 4
2574:. EDTECH. p. 35.
2309:10.1021/acsami.8b10370
1922:spin-charge converters
1908:Spin-charge converters
1839:
1830:Light-emission devices
1759:As-GaAs devices using
1638:
1484:transistors and other
1466:molecular-beam epitaxy
1429:Computer Corporation,
1401:One of the first GaAs
1365:for the generation of
1044:Molecular beam epitaxy
728:
6185:External-cavity laser
6179:Quantum-cascade laser
3276:Nature Communications
2278:U.S. patent 4,759,917
2218:U.S. patent 5,300,320
1837:
1751:Complex designs of Al
1720:' surface. Also many
1677:for the same reason.
1660:thin-film solar cells
1630:
1161:("HA"), for example:
899:and optical windows.
889:light-emitting diodes
727:
585:Coordination geometry
6342:III-V semiconductors
6231:Hybrid silicon laser
6202:Volume Bragg grating
6125:Semiconductor lasers
4112:. OEHHA. 2008-08-01.
2455:. Springer. p.
2391:. pp. 173â194.
2032:Light-emitting diode
1634:GaAs cells covering
1452:(AlAs) or the alloy
1157:is complexed with a
940:Liquid encapsulated
710:(fire diamond)
493:Thermal conductivity
460:1.424 eV (at 300 K)
57:Preferred IUPAC name
6322:Inorganic compounds
4088:2004JCrGr.272..816S
3996:2022NIMPA103466803D
3939:10.1143/JJAP.11.365
3931:1972JaJAP..11..365O
3888:1962PhRv..127..768S
3845:1959PhRv..114...59S
3802:2002PSSBR.232..314P
3751:1987PhRvB..36.4748B
3698:2021NIMPA.98964957D
3634:2019ITNS...66.2333V
3580:2018JAP...123k4501D
3530:1962PhRvL...9..366H
3406:2021Mate...14.3075P
3288:2013NatCo...4.1577C
3239:1978JCrGr..45..277K
3117:2020ApSS..51045329P
2843:1993ApPhL..62..131S
2676:. 15 December 2010.
2535:Sze, S. M. (1985).
2303:(39): 33434â33440.
1804:surface passivation
1694:photovoltaic arrays
1690:crystalline silicon
1464:can be grown using
1419:radiation resistant
1392:integrated circuits
1388:dielectric constant
1084:gallium(II) sulfide
1066:â 4 GaAs or 2 Ga +
957:arsenic trichloride
922:. Gallium arsenide
878:integrated circuits
869:crystal structure.
419:Solubility in water
25:
6169:Quantum well laser
4048:2014-11-29 at the
3415:10.3390/ma14113075
3297:10.1038/ncomms2583
2428:www.waferworld.com
1987:Gallium antimonide
1967:Aluminium arsenide
1840:
1639:
1623:Other applications
1509:economies of scale
1499:Silicon advantages
1450:aluminium arsenide
1337:. It has a higher
1284:Buffered FET Logic
1236:GaAs digital logic
832:Infobox references
794:Gallium antimonide
772:Related compounds
729:
23:
6327:Gallium compounds
6304:
6303:
6174:Quantum dot laser
6086:
6085:
6055:Quinary arsenides
5976:
5975:
5970:
5965:
5960:
5955:
5950:
5945:
5940:
5935:
5930:
5921:
5903:
5898:
5893:
5888:
5870:
5865:
5860:
5855:
5846:
5837:
5832:
5827:
5822:
5813:
5808:
5803:
5794:
5789:
5734:
5729:
5724:
5719:
5714:
5709:
5704:
5699:
5694:
5689:
5684:
5679:
5674:
5669:
5664:
5659:
5651:
5646:
5639:
5634:
5629:
5617:
5612:
5607:
5602:
5597:
5592:
5587:
5582:
5560:
5555:
5547:
5542:
5535:
5520:
5489:
5474:
5469:
5464:
5449:
5444:
5430:
5425:
5418:
5408:
5403:
5370:
5365:
5353:
5341:
5336:
5331:
5326:
5314:
5307:
5297:
5292:
5253:
5237:
5232:
5217:
5183:
5169:
5067:
5066:
4648:
4647:
4644:
4643:
4281:Gallium compounds
4209:(92nd ed.).
3739:Physical Review B
3588:10.1063/1.5018343
3358:978-1-6654-1922-2
2957:978-1-83968-260-5
2738:978-3-540-79359-5
2702:10.1021/jz401485t
2696:(19): 3303â3309.
2608:www.anandtech.com
2602:Cutress, Dr Ian.
2466:978-3-540-64798-0
2406:978-1-4419-1547-4
2364:978-0-12-257735-2
2262:978-0-85296-885-7
2234:, pp. 41 and 66,
2202:978-0-7487-7516-3
2152:978-0-216-92005-7
2007:Gallium phosphide
1982:Cadmium telluride
1806:and minimal post-
1800:hydrofluoric acid
1716:, which explored
1554:), but the Si-SiO
1411:Star Wars program
1378:indirect band gap
1343:electron mobility
1140:hydrogen peroxide
840:Chemical compound
838:
837:
790:Gallium phosphide
760:Safety data sheet
655:Hazard statements
529:Crystal structure
466:Electron mobility
270:CompTox Dashboard
116:Interactive image
109:Interactive image
24:Gallium arsenide
6369:
6290:Gallium arsenide
6123:
6113:
6106:
6099:
6090:
6089:
5968:
5963:
5958:
5953:
5948:
5943:
5938:
5933:
5928:
5924:
5919:
5910:
5906:
5901:
5896:
5891:
5886:
5883:
5868:
5863:
5858:
5853:
5849:
5844:
5840:
5835:
5830:
5825:
5820:
5816:
5811:
5806:
5801:
5797:
5792:
5787:
5784:
5732:
5727:
5722:
5717:
5712:
5707:
5702:
5697:
5692:
5687:
5682:
5677:
5672:
5667:
5662:
5657:
5649:
5644:
5637:
5632:
5627:
5623:
5615:
5610:
5605:
5600:
5595:
5590:
5585:
5580:
5576:
5566:
5558:
5553:
5545:
5540:
5533:
5518:
5509:
5502:
5487:
5483:
5472:
5467:
5462:
5458:
5447:
5442:
5438:
5428:
5423:
5416:
5406:
5399:
5390:
5383:
5368:
5363:
5359:
5351:
5347:
5339:
5334:
5329:
5324:
5312:
5305:
5295:
5290:
5281:
5251:
5235:
5230:
5215:
5211:
5181:
5177:
5167:
5125:
5116:
5115:
5094:
5087:
5080:
5071:
5070:
5060:
5046:
5005:
4980:
4973:
4959:
4945:
4931:
4858:
4794:
4746:
4724:
4675:
4668:
4661:
4652:
4651:
4583:
4582:
4274:
4267:
4260:
4251:
4250:
4224:
4191:
4190:
4183:
4177:
4176:
4174:
4166:
4160:
4159:
4123:
4114:
4113:
4106:
4100:
4099:
4082:(1â4): 816â821.
4071:
4065:
4059:
4053:
4040:
4034:
4031:
4025:
4022:
4016:
4015:
3989:
3965:
3959:
3958:
3914:
3908:
3907:
3871:
3865:
3864:
3828:
3822:
3821:
3785:
3779:
3778:
3745:(9): 4748â4753.
3734:
3728:
3724:
3718:
3717:
3691:
3671:
3662:
3661:
3617:
3608:
3607:
3573:
3553:
3544:
3543:
3541:
3506:
3500:
3499:
3493:
3488:
3486:
3478:
3468:
3452:
3446:
3445:
3435:
3417:
3385:
3379:
3378:
3332:
3326:
3325:
3299:
3267:
3261:
3260:
3250:
3218:
3212:
3211:
3205:
3200:
3198:
3190:
3158:
3145:
3144:
3096:
3090:
3089:
3071:
3047:
3041:
3035:
3029:
3028:
3026:
3024:
3015:
3006:
3000:
2999:
2997:
2996:
2981:
2975:
2974:
2973:
2972:
2949:
2929:
2923:
2922:
2920:
2919:
2904:
2898:
2897:
2869:
2863:
2862:
2851:10.1063/1.109348
2826:
2820:
2819:
2817:
2816:
2802:
2796:
2786:
2780:
2774:
2768:
2749:
2743:
2742:
2712:
2706:
2705:
2684:
2678:
2677:
2666:
2660:
2659:
2657:
2655:
2624:
2618:
2617:
2615:
2614:
2599:
2593:
2592:
2590:
2588:
2565:
2559:
2553:
2547:
2533:
2527:
2526:
2508:
2499:
2498:
2496:
2495:
2480:
2471:
2470:
2454:
2444:
2438:
2437:
2435:
2434:
2420:
2411:
2410:
2376:
2370:
2368:
2348:
2337:
2336:
2288:
2282:
2280:
2273:
2267:
2266:
2248:
2242:
2228:
2222:
2220:
2213:
2207:
2206:
2188:
2182:
2181:
2163:
2157:
2156:
2138:
2127:
2126:Haynes, p. 12.81
2124:
2115:
2114:Haynes, p. 12.86
2112:
2103:
2102:Haynes, p. 12.90
2100:
2094:
2091:
2085:
2082:
2059:Trimethylgallium
2027:Indium phosphide
1934:trimethylgallium
1863:
1861:
1781:epitaxial growth
1474:lattice constant
1295:
1292:
1219:
1217:
1216:
1206:
1205:
1204:
1196:
1195:
1185:
1184:
1183:
1175:
1174:
1156:
1155:
1154:
1104:
1103:
1102:
1094:
1093:
1077:
1076:
1075:
1065:
1064:
1063:
1040:
1039:
1038:
1028:
1027:
1026:
1016:
1015:
1014:
1006:
1005:
990:trimethylgallium
982:
981:
980:
970:
969:
968:
822:
816:
813:
812:
749:
742:
735:
720:
700:
696:
692:
688:
684:
670:
666:
662:
634:
568:Lattice constant
504:Refractive index
486:
359:Chemical formula
294:
293:
278:
276:
250:
214:
203:
192:
190:gallium+arsenide
168:
160:
149:
138:
118:
111:
87:
61:Gallium arsenide
42:
33:
26:
22:
6377:
6376:
6372:
6371:
6370:
6368:
6367:
6366:
6347:III-V compounds
6337:Optoelectronics
6307:
6306:
6305:
6300:
6284:Indium arsenide
6272:
6251:
6247:Polariton laser
6207:
6190:
6127:
6117:
6087:
6082:
6066:
6050:
6026:
5977:
5926:
5918:
5914:
5912:
5908:
5881:
5851:
5842:
5818:
5799:
5782:
5621:
5575:
5571:
5564:
5507:
5501:
5497:
5493:
5482:
5478:
5457:
5453:
5436:
5388:
5382:
5378:
5374:
5357:
5345:
5279:
5246:
5209:
5175:
5127:
5124:
5120:
5103:
5098:
5068:
5063:
5058:
5054:
5049:
5044:
5040:
5035:
5031:
5023:
5008:
5003:
4999:
4994:
4983:
4976:
4971:
4967:
4962:
4957:
4953:
4948:
4943:
4939:
4934:
4929:
4925:
4920:
4916:
4908:
4900:
4892:
4884:
4876:
4861:
4856:
4852:
4847:
4838:
4824:
4801:
4792:
4787:
4773:
4742:
4722:
4718:
4713:
4685:
4679:
4649:
4640:
4637:
4633:
4629:
4621:
4617:
4609:
4605:
4601:
4597:
4581:
4577:
4573:
4565:
4561:
4553:
4549:
4541:
4537:
4529:
4525:
4507:
4499:
4495:
4491:
4483:
4479:
4471:
4463:
4450:
4442:
4434:
4426:
4418:
4414:
4406:
4386:
4382:
4367:
4341:
4321:
4306:
4302:
4298:
4283:
4278:
4231:
4221:
4199:
4194:
4185:
4184:
4180:
4172:
4168:
4167:
4163:
4124:
4117:
4108:
4107:
4103:
4072:
4068:
4060:
4056:
4050:Wayback Machine
4041:
4037:
4032:
4028:
4023:
4019:
3966:
3962:
3915:
3911:
3876:Physical Review
3872:
3868:
3833:Physical Review
3829:
3825:
3786:
3782:
3735:
3731:
3725:
3721:
3672:
3665:
3618:
3611:
3554:
3547:
3510:Hall, Robert N.
3507:
3503:
3491:
3489:
3480:
3479:
3466:10.2172/1351597
3453:
3449:
3386:
3382:
3359:
3333:
3329:
3268:
3264:
3219:
3215:
3203:
3201:
3192:
3191:
3171:10.2172/1484349
3159:
3148:
3097:
3093:
3048:
3044:
3036:
3032:
3022:
3020:
3013:
3007:
3003:
2994:
2992:
2983:
2982:
2978:
2970:
2968:
2958:
2930:
2926:
2917:
2915:
2906:
2905:
2901:
2870:
2866:
2827:
2823:
2814:
2812:
2804:
2803:
2799:
2787:
2783:
2775:
2771:
2758:
2754:
2750:
2746:
2739:
2713:
2709:
2685:
2681:
2668:
2667:
2663:
2653:
2651:
2649:
2625:
2621:
2612:
2610:
2600:
2596:
2586:
2584:
2582:
2566:
2562:
2554:
2550:
2534:
2530:
2523:
2509:
2502:
2493:
2491:
2482:
2481:
2474:
2467:
2445:
2441:
2432:
2430:
2422:
2421:
2414:
2407:
2377:
2373:
2365:
2349:
2340:
2289:
2285:
2276:
2274:
2270:
2263:
2255:. IEEE Inspec.
2249:
2245:
2229:
2225:
2216:
2214:
2210:
2203:
2189:
2185:
2178:
2164:
2160:
2153:
2139:
2130:
2125:
2118:
2113:
2106:
2101:
2097:
2092:
2088:
2084:Haynes, p. 4.64
2083:
2072:
2068:
2063:
2055:to generate THz
2017:Indium arsenide
2002:Gallium nitride
1962:
1930:
1910:
1901:
1859:
1857:
1832:
1776:
1758:
1754:
1675:Lunokhod rovers
1652:
1644:
1642:Transistor uses
1632:Triple-junction
1625:
1576:
1572:
1562:
1557:
1545:
1537:
1532:silicon dioxide
1525:nanoelectronics
1501:
1468:(MBE) or using
1461:
1457:
1403:microprocessors
1374:direct band gap
1331:
1329:GaAs advantages
1326:
1293:
1238:
1233:
1215:
1212:
1211:
1210:
1208:
1203:
1200:
1199:
1198:
1194:
1191:
1190:
1189:
1187:
1182:
1179:
1178:
1177:
1173:
1170:
1169:
1168:
1166:
1159:hydroxamic acid
1153:
1151:
1150:
1149:
1147:
1136:
1111:
1101:
1098:
1097:
1096:
1092:
1090:
1089:
1088:
1087:
1074:
1071:
1070:
1069:
1067:
1062:
1059:
1058:
1057:
1055:
1037:
1034:
1033:
1032:
1030:
1025:
1022:
1021:
1020:
1018:
1013:
1010:
1009:
1008:
1004:
1001:
1000:
999:
997:
979:
976:
975:
974:
972:
967:
964:
963:
962:
960:
924:single crystals
920:oxidation state
916:
860:direct band gap
841:
834:
829:
828:
827: ?)
818:
814:
810:
806:
792:
788:
786:Gallium nitride
782:
754:
753:
752:
751:
744:
737:
730:
726:
718:
679:
657:
643:
627:
599:
597:Molecular shape
587:
578:
570:
553:
545:
531:
514:
512:
484:
480:
438:
421:
361:
347:
344:
339:
334:
333:
322:
319:
318:
315:
309:
308:
297:
279:
272:
253:
233:
217:
204:
178:
141:
121:
101:
90:
77:
63:
62:
46:
43:
21:
12:
11:
5:
6375:
6365:
6364:
6359:
6354:
6349:
6344:
6339:
6334:
6329:
6324:
6319:
6302:
6301:
6299:
6298:
6293:
6287:
6280:
6278:
6274:
6273:
6271:
6270:
6265:
6259:
6257:
6253:
6252:
6250:
6249:
6244:
6239:
6233:
6228:
6222:
6215:
6213:
6209:
6208:
6206:
6205:
6198:
6196:
6192:
6191:
6189:
6188:
6182:
6176:
6171:
6166:
6160:
6154:
6148:
6142:
6135:
6133:
6129:
6128:
6116:
6115:
6108:
6101:
6093:
6084:
6083:
6081:
6080:
6074:
6072:
6068:
6067:
6065:
6064:
6058:
6056:
6052:
6051:
6049:
6048:
6043:
6037:
6035:
6028:
6027:
6025:
6024:
6019:
6014:
6009:
6004:
5999:
5994:
5988:
5986:
5979:
5978:
5974:
5973:
5971:
5966:
5961:
5956:
5951:
5946:
5941:
5936:
5931:
5922:
5916:
5904:
5899:
5894:
5889:
5884:
5879:
5877:
5874:
5873:
5871:
5866:
5861:
5856:
5847:
5838:
5833:
5828:
5823:
5814:
5809:
5804:
5795:
5790:
5785:
5780:
5778:
5775:
5774:
5772:
5770:
5768:
5766:
5764:
5762:
5760:
5758:
5756:
5754:
5752:
5750:
5748:
5746:
5744:
5741:
5739:
5736:
5735:
5730:
5725:
5720:
5715:
5710:
5705:
5700:
5695:
5690:
5685:
5680:
5675:
5670:
5665:
5660:
5655:
5652:
5647:
5641:
5640:
5635:
5630:
5625:
5618:
5613:
5608:
5603:
5598:
5593:
5588:
5583:
5578:
5573:
5568:
5561:
5556:
5551:
5548:
5543:
5537:
5536:
5531:
5526:
5521:
5516:
5511:
5504:
5499:
5495:
5490:
5485:
5480:
5475:
5470:
5465:
5460:
5455:
5450:
5445:
5440:
5433:
5431:
5426:
5420:
5419:
5414:
5409:
5404:
5397:
5392:
5385:
5380:
5376:
5371:
5366:
5361:
5354:
5349:
5342:
5337:
5332:
5327:
5322:
5320:
5315:
5309:
5308:
5303:
5298:
5293:
5288:
5283:
5276:
5274:
5272:
5270:
5268:
5266:
5264:
5262:
5260:
5258:
5256:
5254:
5249:
5244:
5239:
5238:
5233:
5228:
5223:
5218:
5213:
5206:
5204:
5202:
5200:
5198:
5196:
5194:
5192:
5190:
5188:
5186:
5184:
5179:
5171:
5170:
5165:
5163:
5161:
5159:
5157:
5155:
5153:
5151:
5149:
5147:
5145:
5143:
5141:
5139:
5137:
5135:
5133:
5131:
5122:
5114:
5112:
5105:
5104:
5097:
5096:
5089:
5082:
5074:
5065:
5064:
5062:
5061:
5056:
5052:
5047:
5042:
5038:
5033:
5029:
5025:
5021:
5016:
5014:
5010:
5009:
5007:
5006:
5001:
4997:
4991:
4989:
4985:
4984:
4982:
4981:
4974:
4969:
4965:
4960:
4955:
4951:
4946:
4941:
4937:
4932:
4927:
4923:
4918:
4914:
4910:
4906:
4902:
4898:
4894:
4890:
4886:
4882:
4878:
4874:
4869:
4867:
4863:
4862:
4860:
4859:
4854:
4850:
4845:
4840:
4836:
4832:
4827:
4822:
4818:
4813:
4808:
4803:
4799:
4795:
4790:
4785:
4780:
4775:
4771:
4767:
4762:
4757:
4752:
4747:
4740:
4735:
4730:
4725:
4720:
4716:
4711:
4706:
4701:
4695:
4693:
4687:
4686:
4678:
4677:
4670:
4663:
4655:
4646:
4645:
4642:
4641:
4639:
4635:
4631:
4627:
4623:
4619:
4615:
4611:
4607:
4603:
4599:
4595:
4591:
4589:
4580:
4579:
4575:
4571:
4567:
4563:
4559:
4555:
4551:
4547:
4543:
4539:
4535:
4531:
4527:
4523:
4519:
4514:
4509:
4505:
4501:
4497:
4493:
4489:
4485:
4481:
4477:
4473:
4469:
4465:
4461:
4457:
4452:
4448:
4444:
4440:
4436:
4432:
4428:
4424:
4420:
4416:
4412:
4408:
4404:
4400:
4394:
4392:
4388:
4387:
4385:
4384:
4380:
4375:
4373:
4372:Gallium(I,III)
4369:
4368:
4366:
4365:
4360:
4355:
4349:
4347:
4343:
4342:
4340:
4339:
4334:
4329:
4324:
4319:
4314:
4312:
4308:
4307:
4305:
4304:
4300:
4296:
4291:
4289:
4285:
4284:
4277:
4276:
4269:
4262:
4254:
4248:
4247:
4242:
4237:
4230:
4229:External links
4227:
4226:
4225:
4220:978-1439855119
4219:
4198:
4195:
4193:
4192:
4178:
4161:
4134:(5): 436â466.
4115:
4101:
4066:
4054:
4035:
4026:
4017:
3960:
3925:(3): 365â371.
3909:
3882:(3): 768â773.
3866:
3823:
3796:(2): 314â322.
3780:
3729:
3719:
3663:
3609:
3564:(11): 114501.
3545:
3524:(9): 366â369.
3501:
3492:|journal=
3447:
3380:
3357:
3327:
3262:
3213:
3204:|journal=
3146:
3091:
3042:
3030:
3001:
2976:
2956:
2940:, IntechOpen,
2924:
2914:. 28 June 2021
2899:
2864:
2821:
2810:HubbleSite.org
2797:
2793:Zhores Alferov
2781:
2769:
2767:, 2047 (1971))
2756:
2752:
2744:
2737:
2707:
2679:
2661:
2647:
2619:
2594:
2580:
2560:
2548:
2528:
2522:978-0471924784
2521:
2500:
2472:
2465:
2439:
2412:
2405:
2371:
2363:
2338:
2283:
2268:
2261:
2243:
2240:978-1439831526
2223:
2208:
2201:
2183:
2177:978-0471490593
2176:
2158:
2151:
2128:
2116:
2104:
2095:
2086:
2069:
2067:
2064:
2062:
2061:
2056:
2050:
2045:
2040:
2034:
2029:
2024:
2019:
2014:
2009:
2004:
1999:
1994:
1989:
1984:
1979:
1974:
1969:
1963:
1961:
1958:
1929:
1926:
1909:
1906:
1900:
1897:
1896:
1895:
1889:
1876:
1873:
1869:
1865:
1831:
1828:
1775:
1772:
1756:
1752:
1682:Zhores Alferov
1651:
1648:
1643:
1640:
1624:
1621:
1574:
1570:
1567:Aluminum oxide
1560:
1555:
1543:
1535:
1507:minerals. The
1500:
1497:
1459:
1455:
1330:
1327:
1325:
1322:
1321:
1320:
1314:
1304:
1273:
1272:
1266:
1260:
1254:
1248:
1237:
1234:
1232:
1229:
1221:
1220:
1213:
1201:
1192:
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1171:
1152:
1135:
1132:
1110:
1107:
1099:
1091:
1080:
1079:
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1060:
1041:
1035:
1023:
1011:
1002:
983:
977:
965:
946:
945:
938:
931:
915:
912:
839:
836:
835:
830:
808:
807:
803:standard state
800:
797:
796:
783:
777:
774:
773:
769:
768:
763:
756:
755:
745:
738:
731:
716:
715:
714:
713:
711:
702:
701:
680:
675:
672:
671:
658:
653:
650:
649:
644:
639:
636:
635:
628:
623:
620:
619:
609:
608:
604:
603:
600:
595:
592:
591:
588:
583:
580:
579:
573:
571:
566:
563:
562:
551:
546:
541:
538:
537:
532:
527:
524:
523:
519:
518:
515:
510:
502:
499:
498:
495:
489:
488:
481:
475:
472:
471:
468:
462:
461:
458:
452:
451:
432:
426:
425:
422:
417:
414:
413:
410:
404:
403:
400:
394:
393:
390:
384:
383:
382:Gray crystals
380:
376:
375:
372:
366:
365:
362:
357:
354:
353:
349:
348:
346:
345:
342:
340:
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329:
328:
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304:
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255:
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197:
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186:
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95:
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88:
80:
78:
73:
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69:
65:
64:
60:
59:
53:
52:
48:
47:
44:
35:
34:
9:
6:
4:
3:
2:
6374:
6363:
6360:
6358:
6355:
6353:
6350:
6348:
6345:
6343:
6340:
6338:
6335:
6333:
6330:
6328:
6325:
6323:
6320:
6318:
6315:
6314:
6312:
6297:
6294:
6291:
6288:
6285:
6282:
6281:
6279:
6275:
6269:
6266:
6264:
6261:
6260:
6258:
6254:
6248:
6245:
6243:
6240:
6237:
6234:
6232:
6229:
6226:
6223:
6220:
6217:
6216:
6214:
6210:
6203:
6200:
6199:
6197:
6193:
6186:
6183:
6180:
6177:
6175:
6172:
6170:
6167:
6164:
6161:
6158:
6155:
6152:
6149:
6146:
6143:
6140:
6137:
6136:
6134:
6130:
6126:
6122:
6114:
6109:
6107:
6102:
6100:
6095:
6094:
6091:
6079:
6076:
6075:
6073:
6069:
6063:
6060:
6059:
6057:
6053:
6047:
6044:
6042:
6039:
6038:
6036:
6033:
6029:
6023:
6020:
6018:
6015:
6013:
6010:
6008:
6005:
6003:
6000:
5998:
5995:
5993:
5990:
5989:
5987:
5984:
5980:
5972:
5967:
5962:
5957:
5952:
5947:
5942:
5937:
5932:
5929:
5923:
5920:
5911:
5905:
5900:
5895:
5890:
5885:
5880:
5878:
5876:
5875:
5872:
5867:
5862:
5857:
5854:
5848:
5845:
5839:
5834:
5829:
5824:
5821:
5815:
5810:
5805:
5802:
5796:
5791:
5786:
5781:
5779:
5777:
5776:
5773:
5771:
5767:
5765:
5763:
5761:
5759:
5757:
5755:
5753:
5751:
5749:
5747:
5745:
5742:
5740:
5738:
5737:
5731:
5726:
5721:
5716:
5711:
5706:
5701:
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5691:
5686:
5681:
5676:
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5661:
5656:
5653:
5648:
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5636:
5631:
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5619:
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5609:
5604:
5599:
5594:
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5579:
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5569:
5567:
5562:
5557:
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5522:
5517:
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5510:
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5503:
5491:
5486:
5484:
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5471:
5466:
5461:
5459:
5451:
5446:
5441:
5439:
5434:
5432:
5427:
5422:
5421:
5415:
5413:
5410:
5405:
5402:
5398:
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5386:
5384:
5372:
5367:
5362:
5360:
5355:
5350:
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5207:
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5024:
5018:
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5015:
5011:
5004:
4993:
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4990:
4986:
4979:
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4958:
4947:
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4919:
4917:
4911:
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4857:
4846:
4844:
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4833:
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4807:
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4802:
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4793:
4786:
4784:
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4774:
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4758:
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4688:
4683:
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4241:
4238:
4236:
4233:
4232:
4222:
4216:
4212:
4208:
4207:
4201:
4200:
4197:Cited sources
4188:
4182:
4171:
4165:
4157:
4153:
4149:
4145:
4141:
4137:
4133:
4129:
4122:
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4030:
4021:
4013:
4009:
4005:
4001:
3997:
3993:
3988:
3983:
3979:
3975:
3972:-type GaAs".
3971:
3964:
3956:
3952:
3948:
3944:
3940:
3936:
3932:
3928:
3924:
3920:
3913:
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3307:
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2807:
2801:
2794:
2790:
2789:Nobel Lecture
2785:
2778:
2773:
2766:
2762:
2748:
2740:
2734:
2730:
2726:
2722:
2718:
2711:
2703:
2699:
2695:
2691:
2683:
2675:
2674:Seeking Alpha
2671:
2665:
2650:
2648:9780080431529
2644:
2640:
2636:
2632:
2631:
2623:
2609:
2605:
2598:
2583:
2581:9781839473838
2577:
2573:
2572:
2564:
2557:
2552:
2546:
2545:0-471-87424-8
2542:
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2258:
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2233:
2227:
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2204:
2198:
2195:. CRC Press.
2194:
2187:
2179:
2173:
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2162:
2154:
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2013:
2010:
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2000:
1998:
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1990:
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1985:
1983:
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1771:
1768:
1766:
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1761:quantum wells
1749:
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1735:
1731:
1730:photovoltaics
1725:
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1423:supercomputer
1420:
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1399:
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1393:
1389:
1384:
1381:
1379:
1375:
1370:
1368:
1364:
1360:
1356:
1352:
1351:mobile phones
1348:
1344:
1340:
1336:
1318:
1315:
1312:
1308:
1305:
1302:
1299:
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1120:
1116:
1106:
1085:
1053:
1049:
1045:
1042:
995:
991:
987:
984:
971:â 2 GaAs + 3
958:
954:
951:
950:
949:
943:
939:
936:
932:
929:
928:
927:
925:
921:
911:
909:
905:
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898:
894:
890:
887:
883:
879:
875:
870:
868:
864:
863:semiconductor
861:
858:
854:
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849:
846:
833:
826:
821:
804:
798:
795:
791:
787:
784:
781:
776:
775:
770:
767:
766:External MSDS
764:
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758:
757:
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743:
736:
712:
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708:
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703:
681:
678:
674:
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439:insoluble in
437:
433:
431:
428:
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423:
420:
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415:
411:
409:
408:Melting point
406:
405:
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287:DTXSID2023779
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148:ECHA InfoCard
145:
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66:
58:
54:
49:
41:
36:
32:
27:
19:
6289:
6195:Hybrid types
6078:Oxyarsenides
5387:
4749:
4397:
4391:Gallium(III)
4205:
4181:
4164:
4131:
4127:
4104:
4079:
4075:
4069:
4057:
4038:
4029:
4020:
3977:
3973:
3969:
3963:
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3918:
3912:
3879:
3875:
3869:
3839:(1): 59â63.
3836:
3832:
3826:
3793:
3789:
3783:
3742:
3738:
3732:
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3679:
3675:
3625:
3621:
3561:
3557:
3521:
3517:
3504:
3483:cite journal
3450:
3400:(11): 3075.
3397:
3393:
3383:
3340:
3330:
3279:
3275:
3265:
3230:
3226:
3216:
3195:cite journal
3108:
3104:
3094:
3059:
3055:
3045:
3033:
3021:. Retrieved
3017:
3004:
2993:. Retrieved
2988:
2979:
2969:, retrieved
2937:
2927:
2916:. Retrieved
2911:
2902:
2877:
2873:
2867:
2834:
2830:
2824:
2813:. Retrieved
2809:
2800:
2784:
2772:
2764:
2760:
2747:
2723:. Springer.
2720:
2710:
2693:
2689:
2682:
2673:
2664:
2652:. Retrieved
2629:
2622:
2611:. Retrieved
2607:
2597:
2585:. Retrieved
2570:
2563:
2551:
2536:
2531:
2512:
2492:. Retrieved
2490:. 2016-06-09
2488:Ars Technica
2487:
2450:
2442:
2431:. Retrieved
2427:
2384:
2374:
2353:
2300:
2296:
2286:
2271:
2252:
2246:
2231:
2226:
2211:
2192:
2186:
2167:
2161:
2145:. Springer.
2142:
2098:
2089:
1942:metalorganic
1931:
1911:
1902:
1891:
1883:
1882:
1878:
1853:
1845:
1844:
1841:
1824:
1817:
1796:
1790:(MOCVD) and
1785:
1777:
1769:
1750:
1742:
1726:
1679:
1668:
1653:
1645:
1618:
1610:
1607:
1602:absorptivity
1599:
1583:
1565:
1529:
1513:
1502:
1490:
1486:quantum well
1447:
1400:
1385:
1382:
1371:
1332:
1288:
1281:
1274:
1239:
1225:arsenic acid
1222:
1137:
1112:
1081:
988:reaction of
947:
917:
910:and others.
901:
893:laser diodes
871:
852:
843:
842:
706:
646:
613:
590:Tetrahedral
574:
559:
555:
548:
507:
402:5.3176 g/cm
223:RTECS number
68:Identifiers
6352:Solar cells
6212:Other Types
6139:Laser diode
6132:Basic types
4346:Gallium(II)
4288:Gallium(-V)
3282:(1): 1577.
3233:: 277â280.
3023:October 11,
2053:Photomixing
1914:spintronics
1728:GaAs-based
1714:Opportunity
1656:solar cells
1363:Gunn diodes
1341:and higher
1294: 1975
1231:Electronics
1123:Fermi level
1029:â GaAs + 3
959:: 2 Ga + 2
942:Czochralski
897:solar cells
867:zinc blende
641:Signal word
543:Space group
535:Zinc blende
434:soluble in
379:Appearance
364:GaAs
352:Properties
154:100.013.741
6311:Categories
6041:Zn-Cd-P-As
6032:Quaternary
4311:Gallium(I)
3987:2203.15056
3980:: 166803.
3689:2012.07550
3682:: 164957.
3571:1802.09171
3111:: 145329.
2995:2022-10-12
2989:solarparts
2971:2022-10-11
2918:2022-10-11
2880:(2): 737.
2837:(2): 131.
2815:2022-10-11
2654:27 January
2613:2020-08-28
2587:20 January
2494:2016-06-14
2433:2024-09-27
2066:References
1946:carcinogen
1745:Rocket Lab
1722:solar cars
1559:the Si-SiO
1367:microwaves
1117:grow with
876:frequency
625:Pictograms
522:Structure
430:Solubility
424:insoluble
370:Molar mass
248:27FC46GA44
127:ChemSpider
96:3D model (
75:CAS Number
6317:Arsenides
6277:Materials
6062:GaInAsSbP
6034:arsenides
6017:(Ga,Mn)As
5985:arsenides
5111:arsenides
5101:Arsenides
4988:As(III,V)
4691:Arsenides
4684:compounds
4211:CRC Press
4156:207505903
4012:247779262
3955:120981460
3947:0021-4922
3904:0031-899X
3861:0031-899X
3818:0370-1972
3767:0163-1829
3714:229158562
3658:208208697
3650:0018-9499
3596:0021-8979
3424:1996-1944
3394:Materials
3375:237319505
3322:205315999
3306:2041-1723
3257:0022-0248
3187:139380070
3141:213661192
3133:0169-4332
3086:239038321
3078:2156-3381
2966:228807831
2333:206490133
2317:1944-8244
2170:. Wiley.
1738:thin film
1698:germanium
1636:MidSTAR-1
1613:5 nm
1540:insulator
1488:devices.
1355:satellite
1054:: 4 Ga +
1046:(MBE) of
874:microwave
691:P301+P310
616:labelling
259:UN number
230:LW8800000
175:215-114-8
167:EC Number
85:1303-00-0
6227:(VECSEL)
6071:See also
5743:↓
4148:23706044
4046:Archived
3604:56118568
3442:34199850
3314:23481385
2894:36523127
2859:14611939
2763:, 2378 (
2325:30191706
1960:See also
1948:, as do
1918:platinum
1812:spalling
1671:Venera 3
1662:and for
1548:band gap
1505:silicate
1425:vendors
1271:(MOSFET)
1247:(MESFET)
1078:â 2 GaAs
886:infrared
848:arsenide
707:NFPA 704
607:Hazards
479:(χ)
456:Band gap
445:methanol
6221:(VCSEL)
6046:InAsSbP
5983:Ternary
4866:As(III)
4682:Arsenic
4084:Bibcode
3992:Bibcode
3927:Bibcode
3884:Bibcode
3841:Bibcode
3798:Bibcode
3775:9943488
3747:Bibcode
3694:Bibcode
3630:Bibcode
3576:Bibcode
3526:Bibcode
3475:1351597
3433:8200097
3402:Bibcode
3367:1869274
3284:Bibcode
3235:Bibcode
3179:1484349
3113:Bibcode
2839:Bibcode
1808:etching
1684:in the
1550:of 8.9
1435:Alliant
1413:of the
1335:silicon
1286:(BFL).
1165:GaAs +
1144:bromine
1134:Etching
1052:arsenic
1048:gallium
865:with a
855:) is a
845:Gallium
825:what is
823: (
602:Linear
487:10 cgs
449:acetone
441:ethanol
398:Density
199:PubChem
6292:(GaAs)
6286:(InAs)
6256:Theory
6022:InAsSb
6012:GaAsSb
6002:AlAsSb
5997:AlInAs
5992:AlGaAs
5109:Binary
4468:Ga(CN)
4460:Ga(OH)
4217:
4154:
4146:
4010:
3953:
3945:
3902:
3859:
3816:
3773:
3765:
3727:169791
3712:
3656:
3648:
3602:
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3473:
3440:
3430:
3422:
3373:
3365:
3355:
3320:
3312:
3304:
3255:
3185:
3177:
3139:
3131:
3084:
3076:
2964:
2954:
2892:
2857:
2735:
2645:
2578:
2543:
2519:
2463:
2403:
2361:
2331:
2323:
2315:
2281:(1988)
2259:
2238:
2221:(1994)
2199:
2174:
2149:
2037:MESFET
1977:Arsine
1938:arsine
1928:Safety
1710:Spirit
1579:InGaAs
1516:boules
1478:strain
1443:Cray-3
1433:, and
1431:Convex
1311:Cray-3
1279:(IL).
1259:(JFET)
1253:(HEMT)
1127:pinned
1125:to be
1115:boules
1095:BuGaS)
994:arsine
820:verify
817:
780:anions
778:Other
762:(SDS)
647:Danger
331:SMILES
51:Names
6238:(ICL)
6204:laser
6187:(ECL)
6181:(QCL)
6165:(DFB)
6159:(DBR)
6153:(SCH)
6007:GaAsP
5013:As(V)
4614:Ga(CH
4558:Ga(CH
4476:Ga(NO
4173:(PDF)
4152:S2CID
4008:S2CID
3982:arXiv
3951:S2CID
3710:S2CID
3684:arXiv
3654:S2CID
3600:S2CID
3566:arXiv
3371:S2CID
3318:S2CID
3183:S2CID
3137:S2CID
3082:S2CID
3014:(PDF)
2962:S2CID
2890:S2CID
2855:S2CID
2329:S2CID
2043:MOVPE
1884:novel
1868:band.
1534:, SiO
1359:radar
1347:noise
1289:From
1265:(HBT)
998:Ga(CH
986:MOCVD
857:III-V
665:H360F
483:-16.2
306:InChI
263:1557
212:14770
136:14087
98:JSmol
6147:(DH)
6141:(LD)
5927:PuAs
5915:NpAs
5909:NpAs
5852:HoAs
5843:DyAs
5819:SmAs
5800:PrAs
5622:BiAs
5565:TaAs
5508:InAs
5479:PdAs
5454:MoAs
5389:GaAs
5358:CoAs
5346:MnAs
5318:CaAs
5280:AlAs
5176:LiAs
5028:AsCl
4889:AsCl
4881:AsCl
4873:AsBr
4830:TaAs
4816:SmAs
4811:PuAs
4806:PrAs
4798:PdAs
4789:NpAs
4783:NpAs
4778:MnAs
4770:MoAs
4765:LiAs
4755:InAs
4750:GaAs
4744:HoAs
4738:DyAs
4733:CoAs
4728:CaAs
4709:BiAs
4699:AlAs
4626:Ga(C
4594:Ga(C
4562:COO)
4517:GaSb
4504:GaPO
4431:GaCl
4423:GaBr
4398:GaAs
4379:GaCl
4363:GaTe
4358:GaSe
4332:GaBr
4327:GaCl
4215:ISBN
4144:PMID
3978:1034
3943:ISSN
3900:ISSN
3857:ISSN
3814:ISSN
3771:PMID
3763:ISSN
3646:ISSN
3592:ISSN
3496:help
3471:OSTI
3438:PMID
3420:ISSN
3363:OSTI
3353:ISBN
3310:PMID
3302:ISSN
3253:ISSN
3208:help
3175:OSTI
3129:ISSN
3074:ISSN
3025:2022
2952:ISBN
2733:ISBN
2656:2021
2643:ISBN
2589:2022
2576:ISBN
2541:ISBN
2517:ISBN
2461:ISBN
2401:ISBN
2359:ISBN
2321:PMID
2313:ISSN
2257:ISBN
2236:ISBN
2197:ISBN
2172:ISBN
2147:ISBN
1952:and
1950:IARC
1936:and
1765:QWIP
1718:Mars
1712:and
1700:and
1686:USSR
1594:CMOS
1586:hole
1482:HEMT
1439:CMOS
1427:Cray
1207:+ 4
1050:and
992:and
961:AsCl
853:GaAs
699:P501
695:P311
687:P273
683:P261
669:H372
661:H350
517:3.3
388:Odor
239:UNII
184:MeSH
18:Gaas
5654:**
5572:WAs
5524:+Te
5514:-Sn
5437:YAs
5412:+Br
5395:-Ge
5301:+Cl
5286:-Si
5210:BAs
5121:AsH
5020:AsF
4978:AsP
4913:AsI
4905:AsH
4897:AsF
4843:YAs
4835:WAs
4760:YAs
4704:BAs
4512:GaP
4492:(SO
4455:GaN
4447:GaI
4439:GaF
4403:GaH
4353:GaS
4337:GaI
4136:doi
4092:doi
4080:272
4000:doi
3935:doi
3892:doi
3880:127
3849:doi
3837:114
3806:doi
3794:232
3755:doi
3702:doi
3680:989
3638:doi
3584:doi
3562:123
3534:doi
3461:doi
3428:PMC
3410:doi
3345:doi
3292:doi
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3167:doi
3121:doi
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3064:doi
2942:doi
2882:doi
2847:doi
2791:by
2757:1âx
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2698:doi
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2393:doi
2305:doi
1954:ECA
1920:in
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1521:ICs
1493:GaN
1460:1âx
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1197:AsO
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1019:AsH
953:VPE
614:GHS
436:HCl
275:EPA
202:CID
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5964:Md
5959:Fm
5954:Es
5949:Cf
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5939:Cm
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5887:Ac
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5864:Tm
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5836:Tb
5831:Gd
5826:Eu
5812:Pm
5807:Nd
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5788:La
5733:Og
5728:Ts
5723:Lv
5718:Mc
5713:Fl
5708:Nh
5703:Cn
5698:Rg
5693:Ds
5688:Mt
5683:Hs
5678:Bh
5673:Sg
5668:Db
5663:Rf
5658:Lr
5650:Ra
5645:Fr
5638:Rn
5633:At
5628:Po
5616:Pb
5611:Tl
5606:Hg
5601:Au
5596:Pt
5591:Ir
5586:Os
5581:Re
5559:Hf
5554:Lu
5550:*
5546:Ba
5541:Cs
5534:Xe
5529:+I
5519:Sb
5498:As
5494:Cd
5488:Ag
5473:Rh
5468:Ru
5463:Tc
5448:Nb
5443:Zr
5429:Sr
5424:Rb
5417:Kr
5407:Se
5401:As
5379:As
5375:Zn
5369:Cu
5364:Ni
5352:Fe
5340:Cr
5330:Ti
5325:Sc
5306:Ar
5252:Mg
5247:As
5243:Na
5236:Ne
5226:+O
5221:+N
5182:Be
5168:He
5129:+H
5051:As
5037:As
4996:As
4964:As
4954:Se
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4936:As
4922:As
4853:As
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4715:Cd
4574:Te
4570:Ga
4550:Se
4546:Ga
4534:Ga
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277:)
273:(
100:)
20:.
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