235:
65:. Characteristic to the current–voltage relationship of a tunneling diode is the presence of one or more negative differential resistance regions, which enables many unique applications. Tunneling diodes can be very compact and are also capable of ultra-high-speed operation because the quantum tunneling effect through the very thin layers is a very fast process. One area of active research is directed toward building
251:
coefficient is equal to one, i.e. the double barrier is totally transparent for particle transmission. This phenomenon is called resonant tunneling. It is interesting that while the transmission coefficient of a potential barrier is always lower than one (and decreases with increasing barrier height and width), two barriers in a row can be completely transparent for certain energies of the incident particle.
357:
349:
283:
systems, where heterojunctions made up of various III-V compound semiconductors are used to create the double or multiple potential barriers in the conduction band or valence band. Reasonably high performance III-V resonant tunneling diodes have been realized. Such devices have not entered mainstream
428:
Integration of Si/SiGe RITDs with Si CMOS has been demonstrated. Vertical integration of Si/SiGe RITD and SiGe heterojunction bipolar transistors was also demonstrated, realizing a 3-terminal negative differential resistance circuit element with adjustable peak-to-valley current ratio. These results
287:
Most of semiconductor optoelectronics use III-V semiconductors and so it is possible to combine III-V RTDs to make OptoElectronic
Integrated Circuits (OEICS) that use the negative differential resistance of the RTD to provide electrical gain for optoelectronic devices. Recently, the device-to-device
414:
A minimum PVCR of about 3 is needed for typical circuit applications. Low current density Si/SiGe RITDs are suitable for low-power memory applications, and high current density tunnel diodes are needed for high-speed digital/mixed-signal applications. Si/SiGe RITDs have been engineered to have room
246:
through a single barrier, the transmission coefficient, or the tunneling probability, is always less than one (for incoming particle energy less than the potential barrier height). Considering a potential profile which contains two barriers (which are located close to each other), one can calculate
304:
Resonant tunneling diodes can also be realized using the Si/SiGe materials system. Both hole tunneling and electron tunneling have been observed. However, the performance of Si/SiGe resonant tunneling diodes was limited due to the limited conduction band and valence band discontinuities between Si
339:
In the III-V materials system, InAlAs/InGaAs RITDs with peak-to-valley current ratios (PVCRs) higher than 70 and as high as 144 at room temperature and Sb-based RITDs with room temperature PVCR as high as 20 have been obtained. The main drawback of III-V RITDs is the use of III-V materials whose
266:
computed the two terminal current-voltage (I-V) characteristic of a finite superlattice, and predicted that resonances could be observed not only in the transmission coefficient but also in the I-V characteristic. Resonant tunneling also occurs in potential profiles with more than two barriers.
313:
layers grown on Si substrates. Negative differential resistance was only observed at low temperatures but not at room temperature. Resonant tunneling of electrons through Si/SiGe heterojunctions was obtained later, with a limited peak-to-valley current ratio (PVCR) of 1.2 at room temperature.
250:
Tunneling through a double barrier was first solved in the
Wentzel-Kramers-Brillouin (WKB) approximation by David Bohm in 1951, who pointed out the resonances in the transmission coefficient occur at certain incident electron energies. It turns out that, for certain energies, the transmission
85:
A working mechanism of a resonant tunneling diode device and negative differential resistance in output characteristic. There is a negative resistance characteristic after the first current peak, due to a reduction of the first energy level below the source Fermi level with gate bias. (Left:
1477:
S. Sudirgo, D.J. Pawlik, S.K. Kurinec, P.E. Thompson, J.W. Daulton, S.Y. Park, R. Yu, P.R. Berger, and S.L. Rommel, NMOS/SiGe
Resonant Interband Tunneling Diode Static Random Access Memory, 64th Device Research Conference Conference Digest, page 265, June 26–28, 2006, The Pennsylvania State
419:
system, and PVCRs of up to 6.0 have been obtained. In terms of peak current density, peak current densities ranging from as low as 20 mA/cm and as high as 218 kA/cm, spanning seven orders of magnitude, have been achieved. A resistive cut-off frequency of 20.2 GHz has been realized on
330:
tunneling diodes, in which electronic transitions occur between the energy levels in the quantum wells in the conduction band and that in the valence band. Like resonant tunneling diodes, resonant interband tunneling diodes can be realized in both the III-V and Si/SiGe materials systems.
82:
217:
As the bias increases further, the 1st confined state becomes lower in energy and gradually goes into the energy range of bandgap, so the current it carries decreases. At this time, the 2nd confined state is still too high above in energy to conduct significant current.
267:
Advances in the MBE technique led to observation of negative differential conductance (NDC) at terahertz frequencies, as reported by
Sollner et al. in the early 1980s. This triggered a considerable research effort to study tunneling through multi-barrier structures.
305:
and SiGe alloys. Resonant tunneling of holes through Si/SiGe heterojunctions was attempted first because of the typically relatively larger valence band discontinuity in Si/SiGe heterojunctions than the conduction band discontinuity for (compressively) strained Si
558:
Romeira, B.; Figueiredo, J. M. L.; Slight, T. J.; Wang, L.; Wasige, E.; Ironside, C. N.; Quintana, J. M.; Avedillo, M. J. (May 4–9, 2008). "Observation of frequency division and chaos behavior in a laser diode driven by a resonant tunneling diode".
270:
The potential profiles required for resonant tunneling can be realized in semiconductor system using heterojunctions which utilize semiconductors of different types to create potential barriers or wells in the conduction band or the valence band.
138:
structure surrounded by very thin layer barriers. This structure is called a double barrier structure. Carriers such as electrons and holes can only have discrete energy values inside the quantum well. When a voltage is placed across an RTD, a
1387:
Jin, N.; Chung, S.-Y.; Yu, R.; Heyns, R.M.; Berger, P.R.; Thompson, P.E. (2006). "The Effect of Spacer
Thicknesses on Si-Based Resonant Interband Tunneling Diode Performance and Their Application to Low-Power Tunneling Diode SRAM Circuits".
143:
is emitted, which is why the energy value inside the quantum well is equal to that of the emitter side. As voltage is increased, the terahertz wave dies out because the energy value in the quantum well is outside the emitter side energy.
420:
photolithography defined SiGe RITD followed by wet etching for further reducing the diode size, which should be able to improve when even smaller RITDs are fabricated using techniques such as electron beam lithography.
1267:
Rommel, Sean L.; Dillon, Thomas E.; Dashiell, M. W.; Feng, H.; Kolodzey, J.; Berger, Paul R.; Thompson, Phillip E.; Hobart, Karl D.; Lake, Roger; Seabaugh, Alan C.; Klimeck, Gerhard; Blanks, Daniel K. (1998).
530:
Romeira, B.; Slight, J.M.L.; Figueiredo, T.J.; Wasige, L.; Wang, E.; Quintana, C.N.; Ironside, J.M.; Avedillo, M.J. (2008). "Synchronisation and chaos in a laser diode driven by a resonant tunnelling diode".
106:
An RTD can be fabricated using many different types of materials (such as III–V, type IV, II–VI semiconductor) and different types of resonant tunneling structures, such as the heavily doped p–n junction in
1529:
N. Jin; S.Y. Chung; R.M. Heyns; and P.R. Berger; R. Yu; P.E. Thompson & S.L. Rommel (2004). "Tri-State Logic Using
Vertically Integrated Si Resonant Interband Tunneling Diodes with Double NDR".
197:
The following process is also illustrated from rightside figure. Depending on the number of barriers and number of confined states inside the well, the process described below could be repeated.
1309:
Park, S.-Y.; Chung, S.-Y.; Berger, P.R.; Yu, R.; Thompson, P.E. (2006). "Low sidewall damage plasma etching using ICP-RIE with HBr chemistry of Si/SiGe resonant interband tunnel diodes".
375:
materials system, Si/SiGe resonant interband tunneling diodes have also been developed which have the potential of being integrated into the mainstream Si integrated circuits technology.
1179:
Tsai, H.H.; Su, Y.K.; Lin, H.H.; Wang, R.L.; Lee, T.L. (1994). "P-N double quantum well resonant interband tunneling diode with peak-to-valley current ratio of 144 at room temperature".
790:
Roberts, J.; Bagci, I. E.; Zawawi, M. A. M.; Sexton, J.; Hulbert, N.; Noori, Y. J.; Young, M. P.; Woodhead, C. S.; Missous, M.; Migliorato, M. A.; Roedig, U.; Young, R. J. (2015-11-10).
314:
Subsequent developments have realized Si/SiGe RTDs (electron tunneling) with a PVCR of 2.9 with a PCD of 4.3 kA/cm and a PVCR of 2.43 with a PCD of 282 kA/cm at room temperature.
226:
Similar to the first region, as the 2nd confined state becomes closer and closer to the source Fermi level, it carries more current, causing the total current to increase again.
254:
Later, in 1964, L. V. Iogansen discussed the possibility of resonant transmission of an electron through double barriers formed in semiconductor crystals. In the early 1970s,
119:. The structure and fabrication process of Si/SiGe resonant interband tunneling diodes are suitable for integration with modern Si complementary metal–oxide–semiconductor (
1490:"Three-terminal Si-based negative differential resistance circuit element with adjustable peak-to-valley current ratios using a monolithic vertical integration"
94:; Right: current–voltage characteristics). The negative resistance behavior shown in right figure is caused by relative position of confined state to source
391:
608:
L. V. Iogansen, "The possibility of resonance transmission of electrons in crystals through a system of barriers," Soviet
Physics JETP, 1964,
454:
288:
variability in an RTDs current–voltage characteristic has been used as a way to uniquely identify electronic devices, in what is known as a
1488:
Chung, Sung-Yong; Jin, Niu; Berger, Paul R.; Yu, Ronghua; Thompson, Phillip E.; Lake, Roger; Rommel, Sean L.; Kurinec, Santosh K. (2004).
908:
Gennser, Ulf; Kesan, V. P.; Iyer, S. S.; Bucelot, T. J.; Yang, E. S. (1990). "Resonant tunneling of holes through silicon barriers".
17:
857:
Zhang, Weikang; Al-Khalidi, Abdullah; Figueiredo, José; Al-Taai, Qusay Raghib Ali; Wasige, Edward; Hadfield, Robert H. (June 2021).
1270:"Room temperature operation of epitaxially grown Si/Si[sub 0.5]Ge[sub 0.5]/Si resonant interband tunneling diodes"
1144:
Day, D. J.; Chung, Y.; Webb, C.; Eckstein, J. N.; Xu, J. M.; Sweeny, M. (1990). "Double quantum well resonant tunneling diodes".
1431:
S.Y. Chung; R. Yu; N. Jin; S.Y. Park; P.R. Berger & P.E. Thompson (2006). "Si/SiGe
Resonant Interband Tunnel Diode with f
700:"Investigation Into the Integration of a Resonant Tunnelling Diode and an Optical Communications Laser: Model and Experiment"
576:
289:
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applications yet because the processing of III-V materials is incompatible with Si CMOS technology and the cost is high.
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enables the simulation of resonant tunneling diodes under realistic bias conditions for realistically extended devices.
464:
47:
480:
Slight, Thomas J.; Romeira, Bruno; Wang, Liquan; Figueiredo, JosÉ M. L.; Wasige, Edward; Ironside, Charles N. (2008).
205:
For low bias, as the bias increases, the 1st confined state between the potential barriers gets closer to the source
363:
of a typical Si/SiGe resonant interband tunneling diode calculated by
Gregory Snider's 1D Poisson/Schrödinger Solver.
429:
indicate that Si/SiGe RITDs is a promising candidate of being integrated with the Si integrated circuit technology.
280:
982:
P. See; D.J. Paul; B. Hollander; S. Mantl; I. V. Zozoulenko & K.-F. Berggren (2001). "High
Performance Si/Si
247:
the transmission coefficient (as a function of the incoming particle energy) using any of the standard methods.
437:
Other applications of SiGe RITD have been demonstrated using breadboard circuits, including multi-state logic.
238:
A double-barrier potential profile with a particle incident from left with energy less than the barrier height.
749:
1601:
482:"A Liénard Oscillator Resonant Tunnelling Diode-Laser Diode Hybrid Integrated Circuit: Model and Experiment"
1045:
992:
415:
temperature PVCRs up to 4.0. The same structure was duplicated by another research group using a different
62:
43:
1352:
Duschl, R; Eberl, K (2000). "Physics and applications of Si/SiGe/Si resonant interband tunneling diodes".
293:
91:
384:
416:
399:
186:
66:
1575:
748:
Figueiredo, J.M.L.; Romeira, B.; Slight, T.J.; Wang, L.; Wasige, E.; Ironside, C.N. (2008).
657:
Sollner, T. C. L. G.; Goodhue, W. D.; Tannenwald, P. E.; Parker, C. D.; Peck, D. D. (1983).
155:. The forming of negative resistance will be examined in detail in operation section below.
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Resonant interband tunneling diodes (RITDs) combine the structures and behaviors of both
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750:"Self-oscillation and period adding from resonant tunnelling diode–laser diode circuit"
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512:
423:
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947:; Wang, P. J. (1991). "Electron resonant tunneling in Si/SiGe double barrier diodes".
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20.2 GHz and Peak Current Density 218 kA/cm for K-band Mixed-Signal Applications".
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1224:"New negative differential resistance device based on resonant interband tunneling"
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with a resonant-tunneling structure in which electrons can tunnel through some
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406:(RTA) for activation of dopants and reduction of density of point defects.
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The operation of electronic circuits containing RTDs can be described by a
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Handbook of Terahertz Technology for Imaging, Sensing and Communications
292:(QC-PUF). Spiking behaviour in RTDs is under investigation for optical
659:"Resonant tunneling through quantum wells at frequencies up to 2.5 THz"
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859:"Analysis of Excitability in Resonant Tunneling Diode-Photodetectors"
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Integration with Si/SiGe CMOS and heterojunction bipolar transistors
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on application of bias as can be seen in the image generated from
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622:
Tsu, R.; Esaki, L. (1973). "Tunneling in a finite superlattice".
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Typical structure of a Si/SiGe resonant interband tunneling diode
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124:
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processing is incompatible with Si processing and is expensive.
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P. See & D.J. Paul (2001). "The scaled performance of Si/Si
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171:
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656:
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81:
39:
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injectors, (iii) offset of the delta-doping planes from the
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For information on Optoelectronic applications of RTDs see
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David Bohm, Quantum Theory, Prentice-Hall, New York, 1951.
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http://userweb.elec.gla.ac.uk/i/ironside/RTD/RTDOpto.html
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792:"Using Quantum Confinement to Uniquely Identify Devices"
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Söderström, J. R.; Chow, D. H.; McGill, T. C. (1989).
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1221:
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Resonant tunneling diodes are typically realized in
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in particular are used to form this structure. AlAs/
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326:resonant tunneling diodes (RTDs) and conventional
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221:
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1487:
290:quantum confinement physical unclonable function
185:of equations, which are a generalization of the
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383:The five key points to the design are: (i) an
158:This structure can be grown by molecular beam
147:Another feature seen in RTD structures is the
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561:2008 Conference on Lasers and Electro-Optics
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910:Journal of Vacuum Science and Technology B
69:and switching devices that can operate at
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1582:Resonant Tunneling Diode Simulation Tool
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1131:Complete Guide to Semiconductor Devices
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209:, so the current it carries increases.
134:One type of RTDs is formed as a single
14:
1594:
1257:
1390:IEEE Transactions on Electron Devices
698:Slight, T.J.; Ironside, C.N. (2007).
432:
46:states at certain energy levels. The
1088:Sweeny, Mark; Xu, Jingming (1989).
707:IEEE Journal of Quantum Electronics
489:IEEE Journal of Quantum Electronics
402:growth (LTMBE), and (v) postgrowth
318:Interband resonant tunneling diodes
131:heterojunction bipolar technology.
24:
1090:"Resonant interband tunnel diodes"
111:, double barrier, triple barrier,
25:
1618:
1568:
1133:(2 ed.). Wiley-Interscience.
398:interfaces, (iv) low temperature
300:Si/SiGe resonant tunneling diodes
1478:University, University Park, PA.
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52:negative differential resistance
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48:current–voltage characteristic
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1531:IEEE Electron Device Letters
1437:IEEE Electron Device Letters
1181:IEEE Electron Device Letters
1046:IEEE Electron Device Letters
1043:resonant tunneling diodes".
993:IEEE Electron Device Letters
990:Resonant Tunneling Diodes".
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230:Intraband resonant tunneling
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63:quantum mechanical tunneling
7:
10:
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213:Negative resistance region
201:Positive resistance region
569:10.1109/CLEO.2008.4551318
459:. Elsevier. p. 429.
18:Resonant tunnelling diode
545:10.1049/iet-opt:20080024
509:10.1109/JQE.2008.2000924
400:molecular beam epitaxial
92:transmission coefficient
32:resonant-tunneling diode
1551:10.1109/LED.2004.833845
1494:Applied Physics Letters
1457:10.1109/LED.2006.873379
1410:10.1109/TED.2006.879678
1274:Applied Physics Letters
1231:Applied Physics Letters
1146:Applied Physics Letters
1094:Applied Physics Letters
949:Applied Physics Letters
727:10.1109/JQE.2007.898847
663:Applied Physics Letters
624:Applied Physics Letters
404:rapid thermal annealing
281:III-V compound material
364:
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239:
187:Van der Pol oscillator
103:
453:Saeedkia, D. (2013).
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351:
294:neuromorphic computin
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178:/InGaAs can be used.
84:
1602:Terahertz technology
876:10.3390/nano11061590
1543:2004IEDL...25..646J
1506:2004ApPhL..84.2688C
1449:2006IEDL...27..364C
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1323:2006ElL....42..719P
1311:Electronics Letters
1286:1998ApPhL..73.2191R
1243:1989ApPhL..55.1094S
1193:1994IEDL...15..357T
1158:1990ApPhL..57.1260D
1129:Kwok K. Ng (2002).
1106:1989ApPhL..54..546S
1059:2001IEDL...22..582S
1006:2001IEDL...22..182S
961:1991ApPhL..59..973I
922:1990JVSTB...8..210G
818:2015NatSR...516456R
777:10.1049/el:20080350
769:2008ElL....44..876F
757:Electronics Letters
719:2007IJQE...43..580S
675:1983ApPhL..43..588S
636:1973ApPhL..22..562T
533:IET Optoelectronics
501:2008IJQE...44.1158S
149:negative resistance
796:Scientific Reports
433:Other Applications
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1515:10.1063/1.1690109
1201:10.1109/55.311133
1067:10.1109/55.974584
1014:10.1109/55.915607
826:10.1038/srep16456
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183:Liénard system
141:terahertz wave
78:
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26:
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1125:
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863:Nanomaterials
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845:
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836:
831:
827:
823:
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797:
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766:
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724:
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344:Si/SiGe RITDs
341:
332:
329:
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315:
297:
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285:
282:
272:
268:
265:
261:
257:
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160:heteroepitaxy
156:
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137:
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126:
122:
118:
114:
110:
101:
97:
93:
89:
83:
74:
73:frequencies.
72:
68:
64:
60:
57:All types of
55:
53:
49:
45:
41:
37:
33:
19:
1534:
1530:
1524:
1500:(14): 2688.
1497:
1493:
1483:
1473:
1440:
1436:
1426:
1393:
1389:
1382:
1357:
1353:
1347:
1314:
1310:
1304:
1280:(15): 2191.
1277:
1273:
1237:(11): 1094.
1234:
1230:
1217:
1184:
1180:
1174:
1152:(12): 1260.
1149:
1145:
1139:
1130:
1124:
1097:
1093:
1083:
1050:
1044:
1030:
997:
991:
977:
952:
948:
943:Ismail, K.;
938:
913:
909:
903:
866:
862:
852:
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785:
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710:
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627:
623:
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536:
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495:(12): 1158.
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366:
361:Band diagram
338:
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286:
278:
269:
253:
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204:
196:
180:
157:
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136:quantum well
133:
117:quantum wire
113:quantum well
109:Esaki diodes
105:
88:band diagram
77:Introduction
61:make use of
56:
35:
31:
29:
1396:(9): 2243.
1317:(12): 719.
1053:(12): 582.
869:(6): 1590.
763:(14): 876.
630:(11): 562.
410:Performance
392:delta-doped
335:III-V RITDs
207:Fermi level
96:Fermi level
67:oscillators
1596:Categories
1537:(9): 646.
1443:(5): 364.
1187:(9): 357.
1100:(6): 546.
1000:(4): 182.
955:(8): 973.
916:(2): 210.
809:1502.06523
713:(7): 580.
669:(6): 588.
539:(6): 211.
441:References
189:equation.
90:; Center:
802:: 16456.
388:tunneling
385:intrinsic
379:Structure
328:interband
324:intraband
193:Operation
71:terahertz
54:regions.
1465:17627892
1418:13895250
1339:98806257
1209:34825166
1075:10345069
895:34204375
844:26553435
735:35679446
587:45107735
517:28195545
44:resonant
1586:Nanohub
1539:Bibcode
1502:Bibcode
1445:Bibcode
1398:Bibcode
1362:Bibcode
1319:Bibcode
1282:Bibcode
1239:Bibcode
1189:Bibcode
1154:Bibcode
1102:Bibcode
1055:Bibcode
1002:Bibcode
957:Bibcode
918:Bibcode
886:8234959
835:4639737
814:Bibcode
765:Bibcode
715:Bibcode
671:Bibcode
632:Bibcode
497:Bibcode
153:Nanohub
100:bandgap
38:) is a
1607:Diodes
1557:
1463:
1416:
1337:
1207:
1073:
1022:466339
1020:
893:
883:
842:
832:
733:
585:
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515:
463:
262:, and
176:InAlAs
172:InGaAs
123:) and
1559:30227
1555:S2CID
1461:S2CID
1414:S2CID
1335:S2CID
1227:(PDF)
1205:S2CID
1071:S2CID
1018:S2CID
804:arXiv
753:(PDF)
731:S2CID
703:(PDF)
583:S2CID
513:S2CID
485:(PDF)
264:Chang
260:Esaki
115:, or
40:diode
891:PMID
840:PMID
573:ISBN
461:ISBN
373:SiGe
168:AlAs
166:and
164:GaAs
129:SiGe
121:CMOS
98:and
1584:on
1547:doi
1510:doi
1453:doi
1406:doi
1370:doi
1358:380
1327:doi
1290:doi
1247:doi
1197:doi
1162:doi
1110:doi
1063:doi
1037:1−x
1010:doi
984:1−x
965:doi
926:doi
881:PMC
871:doi
830:PMC
822:doi
773:doi
723:doi
679:doi
640:doi
565:doi
541:doi
505:doi
417:MBE
367:In
307:1−x
296:g.
256:Tsu
242:In
174:or
36:RTD
1598::
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1508:.
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1439:.
1433:r0
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1392:.
1368:.
1356:.
1333:.
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1313:.
1288:.
1278:73
1276:.
1272:.
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1039:Ge
1016:.
1008:.
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986:Ge
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924:.
912:.
889:.
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812:.
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661:.
638:.
628:22
626:.
610:18
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571:.
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491:.
487:.
369:Si
309:Ge
258:,
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125:Si
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1104::
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1065::
1057::
1041:x
1024:.
1012::
1004::
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967::
959::
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928::
920::
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873::
846:.
824::
816::
806::
800:5
779:.
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717::
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681::
673::
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589:.
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543::
537:2
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507::
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371:/
311:x
127:/
102:.
34:(
20:)
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