1256:
process as having a 64 nm transistor gate pitch and 42 nm interconnect pitch. Further investigation by Tech
Insights revealed even these values to also be false, and they have been updated accordingly. In addition, the transistor fin height of Samsung's "10 nm" process was updated by MSSCORPS CO at SEMICON Taiwan 2017. GlobalFoundries decided not to develop a "10 nm" node, because it believed it would be short lived. Samsung's "8 nm" process was at that time the company's last to exclusively use DUV lithography.
55:
1247:
1255:
Transistor gate pitch is also referred to as CPP (contacted poly pitch) and interconnect pitch is also referred to as MMP (minimum metal pitch). Samsung reported their "10 nm" process as having a 64 nm transistor gate pitch and 48 nm interconnect pitch. TSMC reported their "10 nm"
599:
In April 2018, Intel announced a delay in volume production of "10 nm" mainstream CPUs until sometime in 2019. In July, the exact time was further pinned down to the holiday season. In the meantime, however, they did release a low-power "10 nm" mobile chip, albeit exclusive to
Chinese
603:
In June 2018 at VLSI 2018, Samsung announced their "11LPP" and "8LPP" processes. "11LPP" was a hybrid based on
Samsung "14 nm" and "10 nm" technology. "11LPP" was based on their "10 nm" BEOL, not their "20 nm" BEOL like the "14LPP". "8LPP" was based on the "10LPP" process.
906:
405:
Since at least 1997, "process nodes" have been named purely on a marketing basis, and have no relation to the dimensions on the integrated circuit; neither gate length, metal pitch or gate pitch on a "10nm" device is ten nanometers. For example,
1295:
Beyond 1z
Samsung named its next node (fourth generation "10 nm class") DRAM : "D1a" (expected at that time to have been produced in 2021), and beyond that "D1b" (expected at that time to have been produced in 2022); whilst
418:. The transistor density (number of transistors per square millimetre) is more important than transistor size, since smaller transistors no longer necessarily mean improved performance, or an increase in the number of transistors.
1281:. As of 2020, there were three generations of "10 nm class" DRAM : 1x nm (19-17 nm, Gen1); 1y nm (16-14 nm, Gen2); and 1z nm (13-11 nm, Gen3). 3rd Generation "1z" DRAM was first introduced
468:
The ITRS's original naming of this technology node was "11 nm". According to the 2007 edition of the roadmap, by the year 2022, the half-pitch (i.e., half the distance between identical features in an array) for a
2348:
1242:{\displaystyle {\rm {No.\ Transistors/mm^{2}=0.6\cdot {\frac {\rm {NAND2\ Tr\ Count}}{\rm {NAND2\ Cell\ Area}}}+0.4\cdot {\frac {\rm {Scan\ Flip\ Flop\ Tr\ Count}}{\rm {Scan\ Flip\ Flop\ Cell\ Area}}}}}}
1270:
For the DRAM industry, the term "10 nm-class" is often used and this dimension generally refers to the half-pitch of the active area. The "10 nm" foundry structures are generally much larger.
611:
GPUs in
September 2020. They were at that time made on a custom version of Samsung's "8 nm" process, called "Samsung 8N", with a transistor density of 44.56 million transistors per mm.
414:" processes are dimensionally similar to Intel's "10 nm" process. TSMC and Samsung's "10 nm" processes are somewhere between Intel's "14 nm" and "10 nm" processes in
2034:
1885:
366:
1673:
1519:
1593:
1577:
1357:
1545:
2174:
596:, a 64-bit ARM-based system on a chip, manufactured by TSMC using a "10 nm" FinFET process, containing 4.3 billion transistors on a die of 87.66 mm.
2243:
556:
nm-class" process, which, according to Tom's
Hardware, Samsung defined as "a process technology node somewhere between 10-nm and 20-nm". On 17 October 2016,
384:
359:
1292:, and was initially stated to be produced using ArF lithography without the use of EUV lithography; subsequent production did utilise EUV lithography.
1443:
2293:
2259:
352:
2226:
2073:
2189:
2138:
2124:
1725:
532:
There is also a distinction to be made between "10 nm" as marketed by foundries and "10 nm" as marketed by DRAM companies.
1465:
2099:
1681:
581:
smartphone, which used the company's version of the "10 nm" processor. On 12 June 2017, Apple delivered second-generation
1523:
1331:
484:, at the time serving as Intel's Chief Technology Officer, said that Intel saw a 'clear way' towards the "10 nm" node.
2059:
67:
1703:
1555:
1845:
1925:
1800:
1300:
referred to succeeding "nodes" as "D1α" and "D1β". Micron announced volume shipment of 1α class DRAM in early 2021.
2321:
1417:
574:
began commercial production of "10 nm" chips in early 2016, before moving onto mass production in early 2017.
42:
1860:
1747:
1491:
861:
2208:
2015:
1996:
2276:
1439:
1265:
470:
17:
1900:
1951:
1274:
Generally "10 nm class" refers to DRAM with a 10-19 nm feature size, and was first introduced
1594:"Samsung Starts Industry's First Mass Production of System-on-Chip with 10-Nanometer FinFET Technology"
1394:
299:
1769:
1579:
Samsung Starts
Industry's First Mass Production of System-on-Chip with 10-Nanometer FinFET Technology
380:
1846:"NVIDIA GeForce RTX 30 Ampere GPU Deep-Dive, Full Specs, Thermals, Power & Performance Detailed"
1633:
1376:
1977:
1377:"Exclusive: Is Intel Really Starting To Lose Its Process Lead? 7nm Node Slated For Release in 2022"
1827:
2245:
Samsung
Develops Industry's First 3rd-generation 10nm-Class DRAM for Premium Memory Applications
2077:
2074:"Intel Details Cannonlake's Advanced 10nm FinFET Node, Claims Full Generation Lead Over Rivals"
1358:"14nm, 7nm, 5nm: How low can CMOS go? It depends if you ask the engineers or the economists..."
334:
505:
As of 2018, "10 nm" as it was generally understood was only in high-volume production at
309:
1828:"Nvidia confirms Samsung 8nm process for RTX 3090, RTX 3080, and RTX 3070 | PC Gamer"
1611:
8:
634:
565:
557:
521:
had considered "10 nm" to be a short-lived node, mainly dedicated to processors for
1997:"Samsung Starts Mass Production of Chips Using 10nm Low Power Plus (10LPP) Process Tech"
1316:
2100:"International Technology Roadmap for Semiconductors 2.0 2015 Edition Executive Report"
1492:"Samsung's new 10nm-process 64GB mobile flash memory chips are smaller, faster, better"
564:
chips at "10 nm". The technology's main announced challenge at that time had been
415:
1704:"Intel Corp. Delays 10nm Chip Production - Mass production is now scheduled for 2019"
1550:
1297:
608:
426:
2155:
117:
1658:
561:
545:
441:
324:
313:
294:
2261:
Samsung
Announces Industry's First EUV DRAM with Shipment of First Million Modules
517:
had not yet started high-volume "10 nm" production, due to yield issues, and
90:
81:
541:
510:
407:
395:
339:
126:
108:
99:
319:
162:
156:
150:
144:
138:
132:
2342:
2311:
1395:"Life at 10nm. (Or is it 7nm?) And 3nm - Views on Advanced Silicon Platforms"
481:
440:
first started their production of "10 nm-class" chips in 2013 for their
399:
329:
225:
216:
207:
198:
189:
180:
171:
28:
2330:
892:
549:
495:
445:
279:
261:
252:
243:
2227:"Samsung Develops Smaller DDR4 Dies Using 3rd Gen 10nm-Class Process Tech"
1361:
1413:
870:
586:
522:
62:
448:
chips, followed by their SoCs using their 10 nm process in 2016.
2349:
International
Technology Roadmap for Semiconductors lithography nodes
593:
578:
474:
2016:"Samsung Foundry Updates: 8LPU Added, EUVL on Track for HVM in 2019"
2190:"Samsung's 8LPP Process Technology Qualified, Ready for Production"
1496:
582:
54:
1469:
1289:
506:
437:
430:
1309:
2318:
2035:"Intel's Process Roadmap to 2025: with 4nm, 3nm, 20A and 18A?!"
1886:"Intel's Process Roadmap to 2025: With 4nm, 3nm, 20A and 18A?!"
452:
began commercial production of "10 nm" chips in 2016, and
422:
392:
2060:"What Products Use Intel 10nm? SuperFin and 10++ Demystified"
644:
514:
453:
1726:"Intel says not to expect mainstream 10nm chips until 2H19"
1637:
639:
571:
526:
518:
492:
491:
nm" process the following year. In 2012, Samsung announced
449:
433:
411:
304:
2175:"Exclusive - GLOBALFOUNDRIES discloses 7nm process detail"
1926:"Intel 10nm density is 2.7X improved over its 14nm node"
1978:"Samsung Foundry Announces 10nm SoC In Mass-Production"
909:
487:
In 2011, Samsung announced plans to introduce the "10
429:
technology that is a non-planar evolution of planar
425:(fin field-effect transistor) technology, a type of
2295:
Micron Delivers Industry's First 1α DRAM Technology
2277:"Teardown: Samsung's D1z DRAM with EUV Lithography"
1546:"Samsung Mass Producing 128Gb 3-bit MLC NAND Flash"
540:In April 2013, Samsung announced that it had begun
421:All production "10 nm" processes are based on
385:
International Technology Roadmap for Semiconductors
1241:
1801:"VLSI 2018: Samsung's 8nm 8LPP, a 10nm extension"
1414:"Intel's Gelsinger Sees Clear Path To 10nm Chips"
577:On 21 April 2017, Samsung started shipping their
2340:
1440:"MIT: Optical lithography good to 12 nanometers"
535:
1466:"World's Largest Fabrication Facility, Line-16"
1259:
27:For the length in general and comparison, see
2139:"Qualcomm Snapdragon 835 First to 10 nm"
1748:"Intel's First 10nm Processor Lands In China"
589:chips using the "10 nm" FinFET process.
360:
2131:
1671:
1538:
1411:
600:markets and with much of the chip disabled.
2148:
2125:"14nm 16nm 10nm and 7nm - What we know now"
1332:"A Brief History of Process Node Evolution"
1770:"VLSI 2018: Samsung's 11nm nodelet, 11LPP"
592:On 12 September 2017, Apple announced the
367:
353:
1858:
2298:(press release), Micron, 26 January 2021
1861:"Intel guts 10nm to get it out the door"
2264:(press release), Samsung, 25 March 2020
2248:(press release), Samsung, 25 March 2019
2032:
1628:
1626:
1624:
14:
2341:
2224:
2206:
1446:from the original on 25 September 2012
2172:
2122:
1975:
1952:"Let's Clear Up the Node Naming Mess"
1898:
1825:
1795:
1793:
1791:
498:chips that are produced using the "10
2275:Choe, Jeongdong (18 February 2021),
2274:
1949:
1901:"TSMC Announces 6-Nanometer Process"
1859:Demerjian, Charlie (2 August 2018).
1621:
2173:Jones, Scotten (25 February 2024).
2123:Jones, Scotten (25 February 2024).
1674:"10nm Rollout Marching Right Along"
585:tablets powered with TSMC-produced
24:
2209:"Why DRAM is stuck in a 10nm trap"
2187:
2026:
2013:
1994:
1788:
1612:"triple patterning for 10nm metal"
1420:from the original on 25 April 2009
1355:
1329:
1231:
1228:
1225:
1222:
1216:
1213:
1210:
1207:
1201:
1198:
1195:
1192:
1186:
1183:
1180:
1177:
1171:
1168:
1165:
1162:
1157:
1154:
1151:
1148:
1145:
1139:
1136:
1130:
1127:
1124:
1121:
1115:
1112:
1109:
1106:
1100:
1097:
1094:
1091:
1073:
1070:
1067:
1064:
1058:
1055:
1052:
1049:
1040:
1037:
1034:
1031:
1026:
1023:
1020:
1017:
1014:
1008:
1005:
996:
993:
990:
987:
966:
962:
954:
951:
948:
945:
942:
939:
936:
933:
930:
927:
924:
915:
912:
25:
2360:
1317:"No More Nanometers – EEJournal"
614:
525:during 2017–2018, moving on to "
53:
2286:
2268:
2252:
2236:
2225:Shilov, Anton (21 March 2019),
2218:
2207:Mellor, Chris (13 April 2020),
2200:
2181:
2166:
2116:
2092:
2076:. 28 March 2017. Archived from
2066:
2052:
2007:
1988:
1969:
1943:
1918:
1892:
1878:
1852:
1838:
1819:
1762:
1740:
1718:
1696:
1665:
1651:
1604:
1586:
1570:
1554:. 11 April 2013. Archived from
1512:
897:
881:
1899:Schor, David (16 April 2019).
1826:James, Dave (September 2020).
1484:
1458:
1432:
1405:
1387:
1369:
1349:
1323:
700:Transistor density (MTr / mm)
13:
1:
2033:Cutress, Ian (26 July 2021).
1303:
1282:
1275:
560:announced mass production of
536:Technology production history
463:
456:later began production of "10
1950:Bohr, Mark (28 March 2017).
1266:Dynamic random-access memory
473:was projected to be 11
7:
2156:"10 nm lithography process"
801:Transistor fin height (nm)
726:Transistor gate pitch (nm)
10:
2365:
1412:Damon Poeter (July 2008).
1263:
778:Transistor fin pitch (nm)
619:
513:had skipped "10 nm",
26:
903:Intel uses this formula:
821:
812:
809:
795:
786:
772:
763:
760:
746:
737:
734:
720:
711:
708:
643:
633:
628:
381:semiconductor fabrication
752:Interconnect pitch (nm)
2322:manufacturing processes
1243:
607:Nvidia released their
36:MOSFET technology node
2143:Samsung 10LPE process
1244:
887:For 10nm ESF renamed
568:for its metal layer.
1383:. 10 September 2016.
907:
853:2016 risk production
845:2018 risk production
631:Ground Rules (2015)
389:10 nanometer process
387:(ITRS) defines the "
1976:Frumusanu, Andrei.
1848:. 4 September 2020.
1472:. 26 September 2011
558:Samsung Electronics
460:nm" chips in 2018.
2213:blocksandfiles.com
1672:techinsights.com.
1500:. 15 November 2012
1260:DRAM "10 nm class"
1239:
839:2017 Q4 production
836:2016 Q4 production
416:transistor density
2337:
2336:
2327:Succeeded by
2231:www.anandtech.com
2194:www.anandtech.com
2020:www.anandtech.com
2001:www.anandtech.com
1982:www.anandtech.com
1634:"10nm Technology"
1330:Shukla, Priyank.
1235:
1221:
1206:
1191:
1176:
1144:
1135:
1120:
1105:
1077:
1063:
1048:
1013:
1004:
923:
877:
876:
629:ITRS Logic Device
609:GeForce 30 series
566:triple patterning
552:chips using a "10
427:multi-gate MOSFET
377:
376:
16:(Redirected from
2356:
2308:Preceded by
2305:
2304:
2300:
2299:
2290:
2284:
2283:
2272:
2266:
2265:
2256:
2250:
2249:
2240:
2234:
2233:
2222:
2216:
2215:
2204:
2198:
2197:
2185:
2179:
2178:
2170:
2164:
2163:
2152:
2146:
2145:
2135:
2129:
2128:
2120:
2114:
2113:
2111:
2109:
2104:
2096:
2090:
2089:
2087:
2085:
2080:on 30 March 2017
2070:
2064:
2063:
2056:
2050:
2049:
2047:
2045:
2030:
2024:
2023:
2011:
2005:
2004:
1992:
1986:
1985:
1973:
1967:
1966:
1964:
1962:
1947:
1941:
1940:
1938:
1936:
1922:
1916:
1915:
1913:
1911:
1896:
1890:
1889:
1882:
1876:
1875:
1873:
1871:
1856:
1850:
1849:
1842:
1836:
1835:
1823:
1817:
1816:
1814:
1812:
1797:
1786:
1785:
1783:
1781:
1766:
1760:
1759:
1757:
1755:
1744:
1738:
1737:
1735:
1733:
1722:
1716:
1715:
1713:
1711:
1700:
1694:
1693:
1691:
1689:
1684:on 3 August 2017
1680:. Archived from
1678:techinsights.com
1669:
1663:
1662:
1655:
1649:
1648:
1646:
1644:
1630:
1619:
1618:
1616:
1608:
1602:
1601:
1598:news.samsung.com
1590:
1584:
1583:
1574:
1568:
1567:
1565:
1563:
1542:
1536:
1535:
1533:
1531:
1526:on 4 August 2018
1522:. Archived from
1516:
1510:
1509:
1507:
1505:
1488:
1482:
1481:
1479:
1477:
1462:
1456:
1455:
1453:
1451:
1436:
1430:
1429:
1427:
1425:
1409:
1403:
1402:
1401:. 12 March 2018.
1391:
1385:
1384:
1373:
1367:
1366:
1353:
1347:
1346:
1344:
1342:
1336:design-reuse.com
1327:
1321:
1320:
1313:
1287:
1284:
1280:
1277:
1249:
1248:
1246:
1245:
1240:
1238:
1237:
1236:
1234:
1219:
1204:
1189:
1174:
1160:
1142:
1133:
1118:
1103:
1089:
1078:
1076:
1061:
1046:
1029:
1011:
1002:
985:
974:
973:
961:
921:
901:
895:
885:
867:2020 production
858:2018 production
855:2017 production
850:2021 production
827:Production year
624:
623:
555:
546:multi-level cell
501:
490:
459:
442:multi-level cell
369:
362:
355:
325:Transistor count
278:
260:
251:
242:
233:
224:
215:
206:
197:
188:
179:
170:
125:
116:
107:
98:
89:
80:
57:
39:
38:
21:
2364:
2363:
2359:
2358:
2357:
2355:
2354:
2353:
2339:
2338:
2328:
2309:
2303:
2292:
2291:
2287:
2281:www.eetimes.com
2273:
2269:
2258:
2257:
2253:
2242:
2241:
2237:
2223:
2219:
2205:
2201:
2188:Shilov, Anton.
2186:
2182:
2171:
2167:
2154:
2153:
2149:
2137:
2136:
2132:
2121:
2117:
2107:
2105:
2102:
2098:
2097:
2093:
2083:
2081:
2072:
2071:
2067:
2058:
2057:
2053:
2043:
2041:
2031:
2027:
2014:Shilov, Anton.
2012:
2008:
1995:Shilov, Anton.
1993:
1989:
1974:
1970:
1960:
1958:
1948:
1944:
1934:
1932:
1924:
1923:
1919:
1909:
1907:
1897:
1893:
1884:
1883:
1879:
1869:
1867:
1857:
1853:
1844:
1843:
1839:
1832:www.pcgamer.com
1824:
1820:
1810:
1808:
1799:
1798:
1789:
1779:
1777:
1768:
1767:
1763:
1753:
1751:
1746:
1745:
1741:
1731:
1729:
1724:
1723:
1719:
1709:
1707:
1706:. 29 April 2018
1702:
1701:
1697:
1687:
1685:
1670:
1666:
1657:
1656:
1652:
1642:
1640:
1632:
1631:
1622:
1614:
1610:
1609:
1605:
1592:
1591:
1587:
1576:
1575:
1571:
1561:
1559:
1558:on 21 June 2019
1544:
1543:
1539:
1529:
1527:
1518:
1517:
1513:
1503:
1501:
1490:
1489:
1485:
1475:
1473:
1464:
1463:
1459:
1449:
1447:
1438:
1437:
1433:
1423:
1421:
1410:
1406:
1393:
1392:
1388:
1375:
1374:
1370:
1354:
1350:
1340:
1338:
1328:
1324:
1319:. 23 July 2020.
1315:
1314:
1310:
1306:
1285:
1278:
1268:
1262:
1253:
1252:
1161:
1090:
1088:
1030:
986:
984:
969:
965:
957:
911:
910:
908:
905:
904:
902:
898:
886:
882:
868:
859:
854:
847:2019 production
846:
842:2018 production
694:
686:
681:
676:
671:
666:
661:
630:
622:
617:
553:
542:mass production
538:
511:GlobalFoundries
499:
488:
466:
457:
408:GlobalFoundries
396:technology node
373:
344:
340:Nanoelectronics
291:
285:
276:
267:
258:
249:
240:
231:
222:
213:
204:
195:
186:
177:
168:
123:
114:
105:
96:
87:
78:
65:
46:
44:
37:
32:
23:
22:
15:
12:
11:
5:
2362:
2352:
2351:
2335:
2334:
2325:
2315:
2302:
2301:
2285:
2267:
2251:
2235:
2217:
2199:
2180:
2165:
2147:
2130:
2115:
2091:
2065:
2051:
2025:
2006:
1987:
1968:
1956:Intel Newsroom
1942:
1917:
1891:
1877:
1851:
1837:
1818:
1787:
1776:. 30 June 2018
1761:
1739:
1728:. 28 July 2018
1717:
1695:
1664:
1650:
1620:
1603:
1585:
1582:, October 2016
1569:
1551:Tom's Hardware
1537:
1520:"10nm rollout"
1511:
1483:
1457:
1431:
1404:
1386:
1368:
1356:Hruska, Joel.
1348:
1322:
1307:
1305:
1302:
1264:Main article:
1261:
1258:
1251:
1250:
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657:11/10 nm
655:
654:16/14 nm
652:
648:
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637:
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621:
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537:
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465:
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398:following the
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94:
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75:
72:
71:
63:MOSFET scaling
59:
58:
50:
49:
35:
9:
6:
4:
3:
2:
2361:
2350:
2347:
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2271:
2263:
2262:
2255:
2247:
2246:
2239:
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2228:
2221:
2214:
2210:
2203:
2195:
2191:
2184:
2176:
2169:
2161:
2157:
2151:
2144:
2140:
2134:
2126:
2119:
2101:
2095:
2079:
2075:
2069:
2061:
2055:
2040:
2036:
2029:
2021:
2017:
2010:
2002:
1998:
1991:
1983:
1979:
1972:
1957:
1953:
1946:
1931:
1927:
1921:
1906:
1905:WikiChip Fuse
1902:
1895:
1887:
1881:
1866:
1862:
1855:
1847:
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1822:
1807:. 1 July 2018
1806:
1805:WikiChip Fuse
1802:
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1775:
1774:WikiChip Fuse
1771:
1765:
1750:. 15 May 2018
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724:
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695:(10 nm)
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651:Process name
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502:nm" process.
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43:Semiconductor
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30:
29:10 nanometres
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2142:
2133:
2118:
2106:. Retrieved
2094:
2082:. Retrieved
2078:the original
2068:
2054:
2042:. Retrieved
2038:
2028:
2019:
2009:
2000:
1990:
1981:
1971:
1959:. Retrieved
1955:
1945:
1933:. Retrieved
1929:
1920:
1908:. Retrieved
1904:
1894:
1880:
1868:. Retrieved
1865:SemiAccurate
1864:
1854:
1840:
1831:
1821:
1809:. Retrieved
1804:
1778:. Retrieved
1773:
1764:
1754:11 September
1752:. Retrieved
1742:
1730:. Retrieved
1720:
1708:. Retrieved
1698:
1686:. Retrieved
1682:the original
1677:
1667:
1653:
1641:. Retrieved
1606:
1597:
1588:
1578:
1572:
1560:. Retrieved
1556:the original
1549:
1540:
1528:. Retrieved
1524:the original
1514:
1502:. Retrieved
1495:
1486:
1474:. Retrieved
1460:
1448:. Retrieved
1434:
1422:. Retrieved
1407:
1398:
1389:
1381:wccftech.com
1380:
1371:
1360:
1351:
1339:. Retrieved
1335:
1325:
1311:
1294:
1273:
1269:
1254:
899:
888:
883:
682:(8 nm)
667:(10 nm)
662:(10 nm)
606:
602:
598:
591:
576:
570:
550:flash memory
539:
531:
504:
496:flash memory
486:
479:
467:
446:flash memory
436:technology.
420:
404:
388:
378:
282: ~ 2025
264: – 2022
255: – 2020
246: – 2018
237: – 2016
234:
228: – 2014
219: – 2012
210: – 2010
201: – 2009
192: – 2007
183: – 2005
174: – 2003
165: – 2001
159: – 1999
153: – 1996
147: – 1993
141: – 1990
135: – 1987
129: – 1984
120: – 1981
111: – 1977
102: – 1974
93: – 1971
84: – 1968
33:
18:10 nanometer
2108:27 December
1935:14 November
1870:6 September
1362:ExtremeTech
1286: 2019
1279: 2016
862:Cannon Lake
677:(8 nm)
672:(8 nm)
529:" in 2018.
320:Moore's law
163:130 nm
157:180 nm
151:250 nm
145:350 nm
139:600 nm
133:800 nm
118:1.5 μm
47:fabrication
1961:6 December
1304:References
871:Tiger Lake
587:Apple A10X
464:Background
314:multi-gate
295:Half-nodes
235:10 nm
226:14 nm
217:22 nm
208:28 nm
199:32 nm
190:45 nm
181:65 nm
172:90 nm
91:10 μm
82:20 μm
2039:AnandTech
1086:⋅
982:⋅
816:Unknown
790:Unknown
767:Unknown
741:Unknown
715:Unknown
706:Unknown
703:Unknown
594:Apple A11
579:Galaxy S8
480:In 2008,
412:7 nm
391:" as the
280:2 nm
262:3 nm
253:5 nm
244:7 nm
127:1 μm
109:3 μm
100:6 μm
2343:Category
2160:wikichip
2084:30 March
1732:1 August
1710:1 August
1530:4 August
1497:Engadget
1444:Archived
1418:Archived
813:Unknown
764:Unknown
583:iPad Pro
335:Industry
2044:27 July
1688:30 June
1643:30 June
1562:21 June
1504:21 June
1476:21 June
1470:Samsung
1450:20 June
1424:20 June
1290:Samsung
889:Intel 7
721:100.76
693:10nm SF
635:Samsung
620:Foundry
507:Samsung
438:Samsung
431:silicon
400:"14 nm"
300:Density
273:Future
2319:MOSFET
1910:31 May
1811:31 May
1780:31 May
1341:9 July
1298:Micron
1220:
1205:
1190:
1175:
1143:
1134:
1119:
1104:
1062:
1047:
1012:
1003:
922:
891:, see
718:52.51
554:
548:(MLC)
500:
489:
458:
444:(MLC)
423:FinFET
402:node.
393:MOSFET
383:, the
310:Device
115:
45:device
2312:14 nm
2103:(PDF)
1930:HEXUS
1659:"Buy"
1615:(PDF)
833:2017
830:2015
712:61.18
709:51.82
665:10LPP
660:10LPE
645:Intel
523:Apple
515:Intel
454:Intel
2331:7 nm
2110:2018
2086:2017
2046:2021
1963:2018
1937:2018
1912:2019
1872:2024
1813:2019
1782:2019
1756:2018
1734:2018
1712:2018
1690:2017
1645:2019
1638:TSMC
1564:2019
1532:2018
1506:2019
1478:2019
1452:2009
1426:2009
1343:2019
893:7 nm
690:10nm
685:10FF
680:8LPA
675:8LPU
670:8LPP
640:TSMC
572:TSMC
527:7 nm
519:TSMC
493:eMMC
471:DRAM
450:TSMC
434:CMOS
305:CMOS
1288:by
1083:0.4
979:0.6
822:53
819:42
807:42
804:42
796:34
793:36
784:36
781:42
773:36
770:44
758:36
755:56
747:54
744:66
732:48
729:70
562:SoC
544:of
410:' "
379:In
2345::
2279:,
2229:,
2211:,
2192:.
2158:.
2141:.
2037:.
2018:.
1999:.
1980:.
1954:.
1928:.
1903:.
1863:.
1830:.
1803:.
1790:^
1772:.
1676:.
1636:.
1623:^
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1548:.
1494:.
1468:.
1442:.
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1397:.
1379:.
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1283:c.
1276:c.
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864:)
810:49
787:42
761:51
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735:68
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475:nm
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259:00
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2022:.
2003:.
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1965:.
1939:.
1914:.
1888:.
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1365:.
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1128:o
1125:l
1122:F
1116:p
1113:i
1110:l
1107:F
1101:n
1098:a
1095:c
1092:S
1080:+
1074:a
1071:e
1068:r
1065:A
1059:l
1056:l
1053:e
1050:C
1044:2
1041:D
1038:N
1035:A
1032:N
1027:t
1024:n
1021:u
1018:o
1015:C
1009:r
1006:T
1000:2
997:D
994:N
991:A
988:N
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967:m
963:m
959:/
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940:i
937:s
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223:0
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