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62:
bonded to one or both sides by a high-temperature oxidation process (the copper and substrate are heated to a carefully controlled temperature in an atmosphere of nitrogen containing about 30 ppm of oxygen; under these conditions, a copper-oxygen eutectic forms which bonds successfully both to copper
145:
AMB consists of a metal foil soldered to the ceramic baseplate using solder paste and high temperature (800 °C – 1000 °C) under vacuum. Although AMB is electrically very similar to DBC, it is typically suited for small production lots due to the unique process requirements.
256:
229:) can also be used in some applications (such as automotive) where reliability is of highest importance. Compared to DCBs, thick film technology offers a higher degree of design freedom but may be less cost-efficient.
169:
Due to its structure, the IMS is a single-sided substrate, i.e. it can only accommodate components on the copper side. In most applications, the baseplate is attached to a heatsink to provide cooling, usually using
34:, these substrates must carry higher currents and provide a higher voltage isolation (up to several thousand volts). They also must operate over a wide temperature range (up to 150 or 200 °C).
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to connect front and back sides. This can be combined with polymer-based circuits to create high density substrates that eliminate the need for direct connection of power devices to heat sinks.
202:
components). This is also true for low-power applications (from some milliwatts to some watts), as the PCB can be thermally enhanced by using thermal vias or wide tracks to improve
93:). This ensures good thermal cycling performances (up to 50,000 cycles). The DBC substrates also have excellent electrical insulation and good heat spreading characteristics.
312:
Source: Liu, Xingsheng (February 2001). "Processing and
Reliability Assessment of Solder Joint Interconnection for Power Chips". Virginia Tech Dissertation
301:
Source: Liu, Xingsheng (February 2001). "Processing and
Reliability Assessment of Solder Joint Interconnection for Power Chips". Virginia Tech Dissertation
177:
Compared to a classical printed circuit board, the IMS provides a better heat dissipation. It is one of the simplest ways to provide efficient cooling to
206:. An advantage of this method is that multilayer PCB allows design of complex circuits, whereas DBC and IMS are mostly single-sided technologies.
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A related technique uses a seed layer, photoimaging, and then additional copper plating to allow for fine lines (as small as 50 micrometres) and
236:
Van
Godbold, C., Sankaran, V.A. and Hudgins, J.L., IEEE Transactions on Power Electronics, Vol. 12, N° 1, Jan 1997, pages 3–11, ISSN 0885-8993
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166:-based dielectric is usually thin (about 100 μm) because it has poor thermal conductivity compared to the ceramics used in DBC substrates.
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136:(BeO), which has good thermal performance, but is often avoided because of its toxicity when the powder is ingested or inhaled.
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technology to form an electrical circuit, while the bottom copper layer is usually kept plain. The substrate is attached to a
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as a dielectric, they can withstand high temperatures and high voltages. Their intrinsic flexibility makes them resistant to
111:), commonly used because of its low cost. It is however not a really good thermal conductor (24-28 W/mK) and is brittle.
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and the oxides used as substrates). The top copper layer can be preformed prior to firing or chemically etched using
82:
362:, Martin März, International Conference on Industrial Technology ICIT'03 Maribor, Slovenia, 10–12 December 2003
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427:
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and screws. Some IMS substrates are available with a copper baseplate for better thermal performances.
162:(usually an epoxy-based layer) and a layer of copper (35 μm to more than 200 μm thick). The
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Structure of a direct bonded copper substrate (top) and an insulated metal substrate (bottom).
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27:
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8:
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One of the main advantages of the DBC vs other power electronic substrates is their low
30:), and to cool the components. Compared to materials and techniques used in lower power
117:(AlN), which is more expensive, but has far better thermal performance (> 150 W/mK).
323:
410:
Quick presentation of several applications and features of the thick film substrates
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22:
31:
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is commonly used because of its low cost and density) covered by a thin layer of
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The thermal performances of IMS, DBC and thick film substrate are evaluated in
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is to provide the interconnections to form an electric circuit (like a
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313:
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191:
194:, there is no need for a thermally efficient substrate. Classical
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Source: Hytel Group, manufacturer of copper on ceramic substrates
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can be used for low-power applications. As they are built using
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198:(PCB) material can be used (this method is typically used with
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59:
58:. They are composed of a ceramic material tile with a sheet of
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360:
Thermal
Management in High-Density Power Converters
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190:When the power devices are attached to a proper
71:by soldering the bottom copper layer to it.
41:
420:
395:: CS1 maint: archived copy as title (
234:Thermal analysis of high-power modules
96:Ceramic material used in DBC include:
401:(pdf document, last accessed 6/5/06)
291:Source: Curamik, manufacturer of DBC
50:DBC substrates are commonly used in
38:Direct Bonded Copper (DBC) substrate
184:
154:IMS consists of a metal baseplate (
141:Active Metal Brazed (AMB) substrate
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14:
439:
83:coefficient of thermal expansion
150:Insulated Metal substrate (IMS)
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1:
324:Source: The Bergquist company
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54:, because of their very good
85:, which is close to that of
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10:
444:
342:Source: AI Technology, Inc
347:28 September 2007 at the
278:22 February 1999 at the
179:surface mount components
329:8 February 2006 at the
257:"Rogers DBC Datasheets"
200:through-hole technology
126:HPS (Alumina w/ 9% ZrO
47:
227:thick film technology
196:printed circuit board
65:printed circuit board
45:
28:printed circuit board
225:Ceramic substrates (
56:thermal conductivity
239:(restricted access)
212:Flexible substrates
89:(compared to pure
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428:Power electronics
115:Aluminium nitride
23:power electronics
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370:. Archived from
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185:Other substrates
130:doped) (26 W/mK)
32:microelectronics
16:The role of the
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377:on 13 June 2007
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365:"Archived copy"
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349:Wayback Machine
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331:Wayback Machine
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280:Wayback Machine
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220:thermal cycling
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134:Beryllium oxide
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123:(SiN) (90 W/mK)
121:Silicon nitride
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172:thermal grease
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69:heat spreader
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52:power modules
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379:. Retrieved
372:the original
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76:through-vias
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244:References
204:convection
160:dielectric
156:aluminium
19:substrate
422:Category
391:cite web
345:Archived
327:Archived
276:Archived
192:heatsink
222:damage.
101:Alumina
87:silicon
216:Kapton
91:copper
60:copper
381:6 May
375:(PDF)
368:(PDF)
260:(PDF)
397:link
383:2006
164:FR-4
103:(Al
21:in
424::
393:}}
389:{{
181:.
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128:2
109:3
107:O
105:2
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