2118:
2075:
38:
1724:
2464:), through the cell, and to the ground, increases exponentially when the cell's temperature rises. The cell power drain occurs in both active and idle states, thus wasting useful energy without any useful work done. Even though in the last 20 years the issue was partially addressed by the Data Retention Voltage technique (DRV) with reduction rates ranging from 5 to 10, the decrease in node size caused reduction rates to fall to about 2.
1696:
2235:
2180:, which makes small voltage swings more easily detectable. Another difference with DRAM that contributes to making SRAM faster is that commercial chips accept all address bits at a time. By comparison, commodity DRAMs have the address multiplexed in two halves, i.e. higher bits followed by lower bits, over the same package pins in order to keep their size and cost down.
1916:(nvSRAM) has standard SRAM functionality, but they save the data when the power supply is lost, ensuring preservation of critical information. nvSRAMs are used in a wide range of situations – networking, aerospace, and medical, among many others – where the preservation of data is critical and where batteries are impractical.
1646:, a configuration that became known as the Farber-Schlig cell. That year they submitted an invention disclosure, but it was initially rejected. In 1965, Benjamin Agusta and his team at IBM created a 16-bit silicon memory chip based on the Farber-Schlig cell, with 80 transistors, 64 resistors, and 4 diodes.
2359:
lines will have a small voltage difference between them. A sense amplifier will sense which line has the higher voltage and thus determine whether there was 1 or 0 stored. The higher the sensitivity of the sense amplifier, the faster the read operation. As the NMOS is more powerful, the pull-down is
2380:
is written by inverting the values of the bit lines. WL is then asserted and the value that is to be stored is latched in. This works because the bit line input-drivers are designed to be much stronger than the relatively weak transistors in the cell itself so they can easily override the previous
2105:
transistors serve to control the access to a storage cell during read and write operations. 6T SRAM is the most common kind of SRAM. In addition to 6T SRAM, other kinds of SRAM use 4, 5, 7, 8, 9, 10 (4T, 5T, 7T 8T, 9T, 10T SRAM), or more transistors per bit. Four-transistor SRAM is quite common in
1899:
Hobbyists, specifically home-built processor enthusiasts, often prefer SRAM due to the ease of interfacing. It is much easier to work with than DRAM as there are no refresh cycles and the address and data buses are often directly accessible. In addition to buses and power connections, SRAM usually
2440:
with an access time of 70 ns will output valid data within 70 ns from the time that the address lines are valid. Some SRAM cells have a "page mode", where words of a page (256, 512, or 1024 words) can be read sequentially with a significantly shorter access time (typically approximately
2027:
architecture. Furthermore, as DRAM is much cheaper than SRAM, SRAM is often replaced by DRAM, especially in the case when a large volume of data is required. SRAM memory is, however, much faster for random (not block / burst) access. Therefore, SRAM memory is mainly used for
2640:
1985: – independent of clock frequency; data in and data out are controlled by address transition. Examples include the ubiquitous 28-pin 8K Ă— 8 and 32K Ă— 8 chips (often but not always named something along the lines of
2136:
Generally, the fewer transistors needed per cell, the smaller each cell can be. Since the cost of processing a silicon wafer is relatively fixed, using smaller cells and so packing more bits on one wafer reduces the cost per bit of memory.
2171:
During read accesses, the bit lines are actively driven high and low by the inverters in the SRAM cell. This improves SRAM bandwidth compared to DRAMs – in a DRAM, the bit line is connected to storage capacitors and
2163:
and BL. They are used to transfer data for both read and write operations. Although it is not strictly necessary to have two bit lines, both the signal and its inverse are typically provided in order to improve
1806:
also normally employ SRAM to hold the image displayed (or to be printed). LCDs can have SRAM in their LCD controllers. SRAM was used for the main memory of many early personal computers such as the
3148:
1927:(PSRAM) is DRAM combined with a self-refresh circuit. It appears externally as slower SRAM, albeit with a density and cost advantage over true SRAM, and without the access complexity of DRAM.
2453:
transistor implementation of SRAM cells, they started to suffer from increasing inefficiencies in cell sizes. Over the last 30 years (from 1987 to 2017) with a steadily decreasing
2360:
easier. Therefore, bit lines are traditionally precharged to high voltage. Many researchers are also trying to precharge at a slightly low voltage to reduce the power consumption.
2467:
With these two issues it became more challenging to develop energy-efficient and dense SRAM memories, prompting semiconductor industry to look for alternatives such as
2015:
and networking equipment, among many other applications. Nowadays, synchronous SRAM (e.g. DDR SRAM) is rather employed similarly to synchronous DRAM –
634:
3161:"Area Optimization in 6T and 8T SRAM Cells Considering Vth Variation in Future Processes -- MORITA et al. E90-C (10): 1949 -- IEICE Transactions on Electronics"
2682:
1680:
SRAM offers a simple data access model and does not require a refresh circuit. Performance and reliability are good and power consumption is low when idle.
2056:
syncBurst (syncBurst SRAM or synchronous-burst SRAM) – features synchronous burst write access to SRAM to increase write operation to SRAM.
2441:
30 ns). The page is selected by setting the upper address lines and then words are sequentially read by stepping through the lower address lines.
2121:
Four-transistor SRAM provides advantages in density at the cost of manufacturing complexity. The resistors must have small dimensions and large values.
2405:) transistors. This is easily obtained as PMOS transistors are much weaker than NMOS when same sized. Consequently, when one transistor pair (e.g. M
2707:
2295:
SRAM operating in read and write modes should have "readability" and "write stability", respectively. The three different states work as follows:
2460:
Besides issues with size a significant challenge of modern SRAM cells is a static current leakage. The current, that flows from positive supply (V
1995: – all timings are initiated by the clock edges. Address, data in and other control signals are associated with the clock signals.
3179:
3160:
2101:(M1, M2, M3, M4) that form two cross-coupled inverters. This storage cell has two stable states which are used to denote 0 and 1. Two additional
1755:. Some amount (kilobytes or less) is also embedded in practically all modern appliances, toys, etc. that implement an electronic user interface.
2331:
In theory, reading only requires asserting the word line WL and reading the SRAM cell state by a single access transistor and bit line, e.g. M
2570:
1900:
requires only three controls: Chip Enable (CE), Write Enable (WE) and Output Enable (OE). In synchronous SRAM, Clock (CLK) is also included.
2368:
The write cycle begins by applying the value to be written to the bit lines. To write a 0, a 0 is applied to the bit lines, such as setting
2638:, Arnold S. Farber & Eugene S. Schlig, "Nondestructive memory array", issued 1967-11-21, assigned to IBM
2976:
2140:
Memory cells that use fewer than four transistors are possible; however, such 3T or 1T cells are DRAM, not SRAM (even the so-called
2543:
2457:(node size) the footprint-shrinking of the SRAM cell topology itself slowed down, making it harder to pack the cells more densely.
1825:
in the late 1980s to early 1990s used SRAM as a storage medium, which required a lithium battery to keep the contents of the SRAM.
629:
31:
2339:. To speed up reading, a more complex process is used in practice: The read cycle is started by precharging both bit lines BL and
649:
2892:
1876:
1687:
consumption during read or write access. The power consumption of SRAM varies widely depending on how frequently it is accessed.
1578:
SRAM will hold its data permanently in the presence of power, while data in DRAM decays in seconds and thus must be periodically
2045:
Zero bus turnaround (ZBT) – the turnaround is the number of clock cycles it takes to change access to SRAM from
2873:
1683:
Since SRAM requires more transistors per bit to implement, it is less dense and more expensive than DRAM and also has a higher
1523:
3059:
3024:
2960:
1064:
2106:
stand-alone SRAM devices (as opposed to SRAM used for CPU caches), implemented in special processes with an extra layer of
3049:
2503:(SVGND). The study claimed reaching an ultra-low SVGND current in a "sleep" and read modes by finely tuning its voltage.
2805:
2245:
1273:
225:
270:
2665:
1887:
1621:
SRAM (MOS-SRAM) was invented in 1964 by John
Schmidt at Fairchild Semiconductor. It was a 64-bit MOS p-channel SRAM.
1618:
1012:
955:
275:
3075:
Kulkarni, Jaydeep P.; Kim, Keejong; Roy, Kaushik (2007). "A 160 mV Robust
Schmitt Trigger Based Subthreshold SRAM".
2828:
2125:
This is sometimes used to implement more than one (read and/or write) port, which may be useful in certain types of
2488:
2454:
2033:
123:
1653:
modules; Its capacity was 64 bits (In the first versions, only 63 bits were usable due to a bug) and was based on
1649:
In April 1969, Intel Inc. introduced its first product, Intel 3101, a SRAM memory chip intended to replace bulky
1338:
998:
942:
1024:
693:
505:
101:
2590:
1883:
1373:
42:
2499:-transistors (FD-SOI), had two-ported SRAM memory rail for synchronous/asynchronous accesses, and selective
2429:
transistors can be easier overridden, and so on. Thus, cross-coupled inverters magnify the writing process.
2110:, allowing for very high-resistance pull-up resistors. The principal drawback of using 4T SRAM is increased
2206:
different words within the SRAM chip. Several common SRAM chips have 11 address lines (thus a capacity of
1708:
724:
619:
520:
2715:
2202:
bits. The most common word size is 8 bits, meaning that a single byte can be read or written to each of
1940:
1936:
1654:
1999:
In the 1990s, asynchronous SRAM used to be employed for fast access time. Asynchronous SRAM was used as
2635:
2023:. Synchronous memory interface is much faster as access time can be significantly reduced by employing
1516:
1313:
1212:
1084:
714:
703:
17:
3190:
3164:
812:
3331:
2252:
1763:
1631:
In 1964, Arnold Farber and Eugene Schlig, working for IBM, created a hard-wired memory cell, using a
575:
510:
405:
3289:
3276:
3238:
2176:
causes the bit line to swing upwards or downwards. The symmetric structure of SRAMs also allows for
3351:
1700:
1385:
1368:
857:
143:
2929:"Embedded Systems Course- module 15: SRAM memory interface to microcontroller in embedded systems"
2575:
2548:
2053:
and vice versa. The turnaround for ZBT SRAMs or the latency between read and write cycle is zero.
1639:
1614:
1552:
1380:
1197:
920:
325:
160:
138:
118:
71:
2829:"Microsoft Says Xbox One's ESRAM is a "Huge Win" – Explains How it Allows Reaching 1080p/60 FPS"
2736:
3328:"Ultra-low voltage and energy efficient SRAM design with new technologies for IoT applications"
3284:
2177:
2004:
1970:
1787:
1253:
470:
340:
280:
602:
3356:
2928:
2336:
1944:
1774:
SRAM is also used in personal computers, workstations, routers and peripheral equipment: CPU
1747:
Many categories of industrial and scientific subsystems, automotive electronics, and similar
1509:
756:
674:
460:
265:
245:
235:
91:
56:
3084:
2523:
2496:
2218:
2211:
2024:
1982:
1650:
1548:
1452:
1320:
1099:
1059:
982:
595:
500:
390:
285:
148:
128:
111:
106:
2759:
8:
3327:
2062:
1358:
1049:
987:
972:
839:
791:
644:
455:
153:
3088:
2111:
3258:
3130:
3100:
3030:
2492:
2373:
2065: – synchronous, separate read and write ports, quadruple data rate I/O.
2008:
1795:
1736:
1712:
1458:
1423:
1069:
495:
480:
425:
420:
410:
385:
310:
2114:
due to the constant current flow through one of the pull-down transistors (M1 or M2).
3262:
3055:
3034:
3020:
3016:
2956:
2801:
2661:
2147:
Access to the cell is enabled by the word line (WL in figure) which controls the two
2059:
DDR SRAM – synchronous, single read/write port, double data rate I/O.
2020:
1913:
1870:
1135:
1130:
1054:
1019:
873:
851:
750:
709:
612:
450:
175:
2413:) is only slightly overridden by the write process, the opposite transistors pair (M
1585:
SRAM is faster than DRAM but it is more expensive in terms of silicon area and cost.
3250:
3134:
3122:
3092:
3012:
2767:
2323:
will continue to reinforce each other as long as they are connected to the supply.
2315:
disconnect the cell from the bit lines. The two cross-coupled inverters formed by M
1924:
1838:
1811:
1803:
1470:
1464:
1390:
1353:
1343:
1308:
1120:
1074:
1042:
817:
800:
485:
445:
205:
190:
86:
76:
3104:
1989:
and 62C256 respectively), as well as similar products up to 16 Mbit per chip.
3254:
2949:
2795:
2655:
2615:
1759:
1748:
1732:
1704:
1684:
1670:
1556:
1363:
1190:
1177:
868:
863:
719:
586:
565:
540:
400:
320:
250:
220:
195:
81:
52:
3214:
3004:
2848:
2347:) voltage. Then asserting the word line WL enables both the access transistors M
1863:
the registers and parts of the state-machines used in some microprocessors (see
3126:
3118:
2517:
2500:
2173:
2159:
which, in turn, control whether the cell should be connected to the bit lines:
1674:
1628:-based technology fabrication process since the 1960s, when CMOS was invented.
1579:
1482:
1400:
1243:
900:
762:
698:
570:
555:
535:
530:
475:
440:
395:
345:
335:
330:
315:
210:
200:
133:
3345:
3096:
2130:
1864:
1775:
1488:
1115:
1110:
1079:
834:
744:
560:
550:
545:
525:
360:
350:
230:
215:
2653:
2381:
state of the cross-coupled inverters. In practice, access NMOS transistors M
2117:
2074:
2512:
2165:
2126:
1636:
1593:
1435:
1429:
1395:
1263:
1218:
1202:
1094:
890:
885:
845:
807:
490:
465:
365:
300:
255:
240:
3305:
37:
2355:, which causes one bit line BL voltage to slightly drop. Then the BL and
2214:
words) and an 8-bit word, so they are referred to as "2k Ă— 8 SRAM".
2107:
2000:
1992:
1822:
1601:
1494:
1446:
880:
415:
355:
260:
2910:
2681:
Volk, Andrew M.; Stoll, Peter A.; Metrovich, Paul (First
Quarter 2001).
2098:
1799:
1632:
1089:
915:
669:
435:
430:
305:
170:
96:
3003:
Rathi, Neetu; Kumar, Anil; Gupta, Neeraj; Singh, Sanjay Kumar (2023).
2029:
2016:
2012:
1849:
1791:
1783:
1779:
1728:
1723:
1716:
1589:
1476:
1441:
1278:
1207:
1105:
976:
967:
664:
607:
375:
295:
2771:
1613:
Semiconductor bipolar SRAM was invented in 1963 by Robert Norman at
3309:
2620:
2571:"1970: MOS dynamic RAM competes with magnetic core memory on price"
2468:
1857:
1842:
1658:
1643:
1405:
1348:
1283:
1238:
1223:
993:
962:
935:
910:
768:
654:
380:
290:
185:
180:
3005:"A Review of Low-Power Static Random Access Memory (SRAM) Designs"
2372:
to 1 and BL to 0. This is similar to applying a reset pulse to an
2141:
2003:
for small cache-less embedded processors used in everything from
1303:
1293:
1288:
1248:
1150:
1145:
1125:
930:
905:
895:
686:
3225:
2634:
2450:
2083:
1950:
1815:
1695:
1298:
1258:
1140:
1029:
827:
370:
3237:
Kabir, Hussain
Mohammed Dipu; Chan, Mansun (January 2, 2015).
3119:"0.45-V operating Vt-variation tolerant 9T/18T dual-port SRAM"
2472:
2217:
The dimensions of an SRAM cell on an IC is determined by the
2078:
A six-transistor CMOS SRAM cell. WL: word line. BL: bit line.
1947:) – very fast but with high power consumption
1751:, contain SRAM which, in this context, may be referred to as
1233:
1170:
1165:
1160:
822:
779:
773:
659:
639:
624:
2335:, BL. However, bit lines are relatively long and have large
1986:
1954:
1807:
1625:
1567:
1228:
515:
165:
2911:"Homemade CPU – from scratch : Svarichevsky Mikhail"
2654:
Emerson W. Pugh; Lyle R. Johnson; John H. Palmer (1991).
2544:"1966: Semiconductor RAMs Serve High-speed Storage Needs"
2484:
2437:
2094:
1853:
1597:
1268:
1155:
925:
2797:
The
Essentials of Computer Organization and Architecture
2483:
In 2019 a French institute reported on a research of an
1642:. They replaced the latch with two transistors and two
3187:
2421:) gate voltage is also changed. This means that the M
3002:
2893:"$ 399 Atari Portfolio Takes on Hand-held Poqet PC"
2757:
2948:
2683:"Recollections of Early Chip Development at Intel"
2680:
1719:process. Topology of the cells is clearly visible.
3343:
3239:"SRAM precharge system for reducing write power"
3009:2023 IEEE Devices for Integrated Circuit (DevIC)
2376:, which causes the flip flop to change state. A
2850:Shared Memory Interface with the TMS320C54x DSP
2708:"Intel at 50: Intel's First Product – the 3101"
3074:
2800:. Jones and Bartlett Publishers. p. 282.
2760:"Low temperature data remanence in static RAM"
2389:have to be stronger than either bottom NMOS (M
2133:implemented with multi-ported SRAM circuitry.
1517:
2899:. Ziff Davis, Inc. – via Google Books.
2880:. Ziff Davis, Inc. – via Google Books.
2764:University of Cambridge, Computer Laboratory
2751:
1879:(ASICs) (usually in the order of kilobytes),
2955:(4th ed.). : McGraw-Hill. 1996-07-01.
2826:
2520:, a discontinued SRAM memory card standard
1524:
1510:
3288:
3236:
3189:. IEEE Press. p. 290. Archived from
2793:
2738:Intel 64 bit static RAM rubylith : 6
2444:
2116:
2073:
1877:application-specific integrated circuits
1841:(usually from around 32 bytes to a
1722:
1694:
1624:SRAM was the main driver behind any new
36:
32:synchronous dynamic random-access memory
3177:
2998:
2996:
2891:Matzkin, Jonathan (December 26, 1989).
2890:
2789:
2787:
14:
3344:
3303:
2613:
2303:If the word line is not asserted, the
2082:A typical SRAM cell is made up of six
1559:; data is lost when power is removed.
3321:
3319:
2865:
1930:
1856:family, and many others (from 8
1828:
1762:form is sometimes used for real-time
1065:Vision Electronic Recording Apparatus
3325:
3077:IEEE Journal of Solid-State Circuits
3047:
2993:
2871:
2784:
2614:Walker, Andrew (December 17, 2018).
2609:
2607:
2605:
2603:
2228:
2221:of the process used to make the IC.
2088:
1961:
1908:
1833:SRAM may be integrated on chip for:
1600:while DRAM is used for a computer's
3304:Walker, Andrew (February 6, 2019).
2977:"3.0V Core Async/Page PSRAM Memory"
2497:fully depleted silicon on insulator
1919:
1852:in more powerful CPUs, such as the
24:
3316:
2794:Null, Linda; Lobur, Julia (2006).
1888:complex programmable logic devices
1669:Though it can be characterized as
1664:
226:Data validation and reconciliation
25:
3368:
3326:Reda, Boumchedda (May 20, 2019).
3149:Quasi-static random access memory
3048:Chen, Wai-Kai (October 3, 2018).
2758:Sergei Skorobogatov (June 2002).
2700:
2600:
2255:and remove advice or instruction.
2224:
276:Distributed file system for cloud
3017:10.1109/DevIC57758.2023.10134887
2872:Stam, Nick (December 21, 1993).
2233:
1903:
1588:Typically, SRAM is used for the
124:Areal density (computer storage)
3297:
3269:
3230:
3219:
3215:6F2 3-transistor DRAM gain cell
3207:
3180:"14: Register Files and Caches"
3171:
3153:
3141:
3111:
3068:
3041:
2969:
2941:
2921:
2903:
2884:
2841:
2820:
2657:IBM's 360 and Early 370 Systems
2432:
2272:An SRAM cell has three states:
1769:
1742:
1690:
943:Programmable metallization cell
3213:United States Patent 6975531:
3147:United States Patent 6975532:
2874:"PCMCIA's System Architecture"
2729:
2674:
2647:
2628:
2583:
2563:
2536:
2097:in the cell is stored on four
1976:
1884:field-programmable gate arrays
1731:SRAM cells on a STM32F103VGT6
1553:latching circuitry (flip-flop)
506:Persistence (computer science)
13:
1:
2975:
2529:
2449:With the introduction of the
2039:
1957:) – low power
1374:Electronic quantum holography
43:Nintendo Entertainment System
3255:10.1080/1023697X.2014.970761
3121:. March 2011. pp. 1–4.
2714:. 2018-05-14. Archived from
2285:The data has been requested.
1894:
1709:scanning electron microscope
1655:bipolar junction transistors
725:Video RAM (dual-ported DRAM)
521:Non-RAID drive architectures
7:
3178:Preston, Ronald P. (2001).
2506:
2478:
2019:memory is rather used than
1937:Bipolar junction transistor
1555:to store each bit. SRAM is
1537:Static random-access memory
10:
3373:
3127:10.1109/ISQED.2011.5770728
2827:Fahad Arif (Apr 5, 2014).
2696:(1): 11 – via Intel.
2660:. MIT Press. p. 462.
2363:
2326:
2298:
1608:
1314:Holographic Versatile Disc
1213:Compact Disc Digital Audio
1085:Magnetic-tape data storage
704:Content-addressable memory
29:
3332:Grenoble Alpes University
3064:– via Google Books.
2183:The size of an SRAM with
2069:
1764:digital signal processing
1657:it was designed by using
1619:Metal–oxide–semiconductor
1566:differentiates SRAM from
511:Persistent data structure
406:Digital rights management
41:A static RAM chip from a
3097:10.1109/JSSC.2007.897148
2690:Intel Technology Journal
2086:, and is often called a
2036:or other small buffers.
2032:, small on-chip memory,
1860:, up to many megabytes),
1727:Comparison image of 180
1386:DNA digital data storage
1369:Holographic data storage
858:Solid-state hybrid drive
144:Network-attached storage
45:clone (2K Ă— 8 bits)
30:Not to be confused with
2616:"The Trouble with SRAM"
2576:Computer History Museum
2549:Computer History Museum
1615:Fairchild Semiconductor
1574:random-access memory):
1381:5D optical data storage
1198:3D optical data storage
921:Universal Flash Storage
326:Replication (computing)
271:Distributed file system
161:Single-instance storage
139:Direct-attached storage
119:Continuous availability
27:Type of computer memory
2291:Updating the contents.
2178:differential signaling
2122:
2079:
2005:industrial electronics
1739:
1720:
1254:Nintendo optical discs
471:Storage virtualization
341:Information repository
281:Distributed data store
46:
3265:– via CrossRef.
3226:3T-iRAM(r) Technology
2951:Computer organization
2445:Production challenges
2337:parasitic capacitance
2120:
2077:
1726:
1698:
757:Mellon optical memory
745:Williams–Kilburn tube
461:Locality of reference
266:Clustered file system
92:Memory access pattern
40:
3011:. pp. 455–459.
2524:In-memory processing
2279:The circuit is idle.
2253:rewrite this section
2219:minimum feature size
1651:magnetic-core memory
1549:random-access memory
1453:Magnetic-core memory
1100:Digital Data Storage
1060:Quadruplex videotape
501:In-memory processing
391:Information transfer
286:Distributed database
149:Storage area network
129:Block (data storage)
3089:2007IJSSC..42.2303K
2319: – M
2063:Quad Data Rate SRAM
2009:measurement systems
1703:of a STM32F103VGT6
1050:Phonograph cylinder
988:Electrochemical RAM
840:Solid-state storage
456:Memory segmentation
154:Block-level storage
2495:. It was based on
2187:address lines and
2123:
2080:
1931:By transistor type
1829:Integrated on chip
1740:
1737:optical microscope
1721:
1713:STMicroelectronics
1711:. Manufactured by
1699:SRAM cells on the
1459:Plated-wire memory
1424:Paper data storage
1070:Magnetic recording
496:In-memory database
481:Memory-mapped file
426:Volume boot record
421:Master boot record
411:Volume (computing)
386:Data communication
311:Data deduplication
47:
3243:HKIE Transactions
3061:978-1-4200-0596-7
3051:The VLSI Handbook
3026:979-8-3503-4726-5
2962:978-0-07-114323-3
2591:"Memory lectures"
2343:, to high (logic
2270:
2269:
2246:a manual or guide
2021:asynchronous DRAM
1962:By numeral system
1914:Non-volatile SRAM
1909:Non-volatile SRAM
1871:scratchpad memory
1534:
1533:
1131:8 mm video format
1055:Phonograph record
874:Flash Core Module
852:Solid-state drive
751:Delay-line memory
710:Computational RAM
613:Scratchpad memory
451:Disk partitioning
176:Unstructured data
102:Secondary storage
16:(Redirected from
3364:
3336:
3335:
3323:
3314:
3313:
3306:"The Race is On"
3301:
3295:
3294:
3292:
3273:
3267:
3266:
3234:
3228:
3223:
3217:
3211:
3205:
3204:
3202:
3201:
3195:
3184:
3175:
3169:
3168:
3163:. Archived from
3157:
3151:
3145:
3139:
3138:
3115:
3109:
3108:
3072:
3066:
3065:
3045:
3039:
3038:
3000:
2991:
2990:
2988:
2987:
2981:
2973:
2967:
2966:
2954:
2945:
2939:
2938:
2936:
2935:
2925:
2919:
2918:
2907:
2901:
2900:
2888:
2882:
2881:
2869:
2863:
2862:
2861:
2860:
2855:
2845:
2839:
2838:
2836:
2835:
2824:
2818:
2817:
2815:
2814:
2791:
2782:
2781:
2779:
2778:
2755:
2749:
2748:
2747:
2746:
2733:
2727:
2726:
2724:
2723:
2704:
2698:
2697:
2687:
2678:
2672:
2671:
2651:
2645:
2644:
2643:
2639:
2632:
2626:
2625:
2611:
2598:
2597:
2595:
2587:
2581:
2580:
2567:
2561:
2560:
2558:
2556:
2540:
2397:) or top PMOS (M
2371:
2358:
2342:
2265:
2262:
2256:
2244:is written like
2237:
2236:
2229:
2209:
2205:
2201:
2194:
2190:
2186:
2162:
2090:
1925:Pseudostatic RAM
1920:Pseudostatic RAM
1839:microcontrollers
1812:TRS-80 Model 100
1749:embedded systems
1673:, SRAM exhibits
1551:(RAM) that uses
1526:
1519:
1512:
1471:Thin-film memory
1465:Core rope memory
1391:Universal memory
1354:Millipede memory
1344:Racetrack memory
1309:Ultra HD Blu-ray
1121:Linear Tape-Open
1075:Magnetic storage
1043:Analog recording
486:Software entropy
446:Disk aggregation
206:Data degradation
191:Data compression
87:Memory hierarchy
77:Memory coherence
49:
48:
21:
3372:
3371:
3367:
3366:
3365:
3363:
3362:
3361:
3352:Computer memory
3342:
3341:
3340:
3339:
3324:
3317:
3302:
3298:
3290:10.1.1.119.3735
3275:
3274:
3270:
3235:
3231:
3224:
3220:
3212:
3208:
3199:
3197:
3193:
3182:
3176:
3172:
3159:
3158:
3154:
3146:
3142:
3117:
3116:
3112:
3073:
3069:
3062:
3046:
3042:
3027:
3001:
2994:
2985:
2983:
2979:
2974:
2970:
2963:
2947:
2946:
2942:
2933:
2931:
2927:
2926:
2922:
2909:
2908:
2904:
2889:
2885:
2870:
2866:
2858:
2856:
2853:
2847:
2846:
2842:
2833:
2831:
2825:
2821:
2812:
2810:
2808:
2792:
2785:
2776:
2774:
2772:10.48456/tr-536
2756:
2752:
2744:
2742:
2735:
2734:
2730:
2721:
2719:
2706:
2705:
2701:
2685:
2679:
2675:
2668:
2652:
2648:
2641:
2633:
2629:
2612:
2601:
2593:
2589:
2588:
2584:
2569:
2568:
2564:
2554:
2552:
2542:
2541:
2537:
2532:
2509:
2481:
2463:
2455:transistor size
2447:
2435:
2428:
2424:
2420:
2416:
2412:
2408:
2404:
2400:
2396:
2392:
2388:
2384:
2369:
2366:
2356:
2354:
2350:
2340:
2334:
2329:
2322:
2318:
2314:
2310:
2301:
2266:
2260:
2257:
2250:
2238:
2234:
2227:
2207:
2203:
2196:
2192:
2188:
2184:
2160:
2158:
2154:
2072:
2042:
1979:
1964:
1933:
1922:
1911:
1906:
1897:
1831:
1772:
1745:
1733:microcontroller
1705:microcontroller
1693:
1671:volatile memory
1667:
1665:Characteristics
1611:
1557:volatile memory
1547:) is a type of
1530:
1501:
1500:
1419:
1411:
1410:
1364:Patterned media
1334:
1326:
1325:
1193:
1183:
1182:
1178:Hard disk drive
1045:
1035:
1034:
1015:
1004:
1003:
958:
948:
947:
869:IBM FlashSystem
864:USB flash drive
803:
786:
785:
740:
732:
731:
720:Dual-ported RAM
598:
581:
580:
541:Cloud computing
401:Copy protection
321:Data redundancy
251:Shared resource
221:Data validation
196:Data corruption
171:Structured data
82:Cache coherence
67:
53:Computer memory
35:
28:
23:
22:
15:
12:
11:
5:
3370:
3360:
3359:
3354:
3338:
3337:
3315:
3296:
3268:
3229:
3218:
3206:
3170:
3167:on 2008-12-05.
3152:
3140:
3110:
3067:
3060:
3040:
3025:
2992:
2968:
2961:
2940:
2920:
2902:
2883:
2864:
2840:
2819:
2807:978-0763737696
2806:
2783:
2750:
2728:
2712:Intel Newsroom
2699:
2673:
2666:
2646:
2627:
2599:
2582:
2562:
2534:
2533:
2531:
2528:
2527:
2526:
2521:
2518:Miniature Card
2515:
2508:
2505:
2501:virtual ground
2480:
2477:
2461:
2446:
2443:
2434:
2431:
2426:
2422:
2418:
2414:
2410:
2406:
2402:
2398:
2394:
2390:
2386:
2382:
2365:
2362:
2352:
2348:
2332:
2328:
2325:
2320:
2316:
2312:
2308:
2300:
2297:
2293:
2292:
2286:
2280:
2268:
2267:
2241:
2239:
2232:
2226:
2225:SRAM operation
2223:
2191:data lines is
2174:charge sharing
2156:
2152:
2131:register files
2071:
2068:
2067:
2066:
2060:
2057:
2054:
2041:
2038:
1997:
1996:
1990:
1978:
1975:
1974:
1973:
1968:
1963:
1960:
1959:
1958:
1948:
1932:
1929:
1921:
1918:
1910:
1907:
1905:
1902:
1896:
1893:
1892:
1891:
1880:
1874:
1868:
1861:
1846:
1830:
1827:
1798:buffers, etc.
1776:register files
1771:
1768:
1744:
1741:
1735:as seen by an
1692:
1689:
1675:data remanence
1666:
1663:
1610:
1607:
1606:
1605:
1586:
1583:
1532:
1531:
1529:
1528:
1521:
1514:
1506:
1503:
1502:
1499:
1498:
1492:
1486:
1483:Twistor memory
1480:
1474:
1468:
1462:
1456:
1450:
1444:
1439:
1433:
1427:
1420:
1417:
1416:
1413:
1412:
1409:
1408:
1403:
1401:Quantum memory
1398:
1393:
1388:
1383:
1378:
1377:
1376:
1366:
1361:
1356:
1351:
1346:
1341:
1335:
1333:In development
1332:
1331:
1328:
1327:
1324:
1323:
1318:
1317:
1316:
1311:
1306:
1301:
1296:
1291:
1286:
1281:
1276:
1271:
1266:
1261:
1256:
1251:
1246:
1244:Super Video CD
1241:
1236:
1231:
1226:
1221:
1216:
1210:
1205:
1194:
1189:
1188:
1185:
1184:
1181:
1180:
1175:
1174:
1173:
1168:
1163:
1158:
1153:
1148:
1143:
1138:
1133:
1128:
1123:
1118:
1113:
1108:
1103:
1097:
1092:
1087:
1082:
1077:
1067:
1062:
1057:
1052:
1046:
1041:
1040:
1037:
1036:
1033:
1032:
1027:
1022:
1016:
1010:
1009:
1006:
1005:
1002:
1001:
996:
991:
985:
980:
970:
965:
959:
954:
953:
950:
949:
946:
945:
940:
939:
938:
933:
928:
923:
918:
913:
908:
903:
901:MultiMediaCard
898:
893:
888:
878:
877:
876:
871:
866:
861:
855:
849:
837:
832:
831:
830:
825:
815:
810:
804:
799:
798:
795:
794:
788:
787:
784:
783:
777:
771:
766:
763:Selectron tube
760:
754:
748:
741:
738:
737:
734:
733:
730:
729:
728:
727:
717:
712:
707:
701:
696:
691:
690:
689:
679:
678:
677:
672:
667:
662:
657:
652:
647:
642:
637:
632:
627:
617:
616:
615:
610:
603:Hardware cache
599:
594:
593:
590:
589:
583:
582:
579:
578:
573:
568:
563:
558:
556:Edge computing
553:
548:
543:
538:
536:Grid computing
533:
531:Bank switching
528:
523:
518:
513:
508:
503:
498:
493:
488:
483:
478:
476:Virtual memory
473:
468:
463:
458:
453:
448:
443:
441:Disk mirroring
438:
433:
428:
423:
418:
413:
408:
403:
398:
396:Temporary file
393:
388:
383:
378:
373:
368:
363:
358:
353:
348:
346:Knowledge base
343:
338:
336:Storage record
333:
331:Memory refresh
328:
323:
318:
316:Data structure
313:
308:
303:
298:
293:
288:
283:
278:
273:
268:
263:
258:
253:
248:
243:
238:
233:
228:
223:
218:
213:
211:Data integrity
208:
203:
201:Data cleansing
198:
193:
188:
183:
178:
173:
168:
163:
158:
157:
156:
151:
141:
136:
134:Object storage
131:
126:
121:
116:
115:
114:
104:
99:
94:
89:
84:
79:
74:
68:
65:
64:
61:
60:
26:
9:
6:
4:
3:
2:
3369:
3358:
3355:
3353:
3350:
3349:
3347:
3333:
3329:
3322:
3320:
3311:
3307:
3300:
3291:
3286:
3282:
3278:
3272:
3264:
3260:
3256:
3252:
3248:
3244:
3240:
3233:
3227:
3222:
3216:
3210:
3196:on 2013-05-09
3192:
3188:
3181:
3174:
3166:
3162:
3156:
3150:
3144:
3136:
3132:
3128:
3124:
3120:
3114:
3106:
3102:
3098:
3094:
3090:
3086:
3082:
3078:
3071:
3063:
3057:
3054:. CRC Press.
3053:
3052:
3044:
3036:
3032:
3028:
3022:
3018:
3014:
3010:
3006:
2999:
2997:
2978:
2972:
2964:
2958:
2953:
2952:
2944:
2930:
2924:
2916:
2912:
2906:
2898:
2894:
2887:
2879:
2875:
2868:
2852:
2851:
2844:
2830:
2823:
2809:
2803:
2799:
2798:
2790:
2788:
2773:
2769:
2765:
2761:
2754:
2740:
2739:
2732:
2718:on 2023-02-01
2717:
2713:
2709:
2703:
2695:
2691:
2684:
2677:
2669:
2667:9780262161237
2663:
2659:
2658:
2650:
2637:
2631:
2623:
2622:
2617:
2610:
2608:
2606:
2604:
2592:
2586:
2578:
2577:
2572:
2566:
2551:
2550:
2545:
2539:
2535:
2525:
2522:
2519:
2516:
2514:
2511:
2510:
2504:
2502:
2498:
2494:
2490:
2486:
2476:
2474:
2470:
2465:
2458:
2456:
2452:
2442:
2439:
2430:
2379:
2375:
2361:
2346:
2338:
2324:
2307:transistors M
2306:
2296:
2290:
2287:
2284:
2281:
2278:
2275:
2274:
2273:
2264:
2254:
2249:
2247:
2242:This section
2240:
2231:
2230:
2222:
2220:
2215:
2213:
2200:
2181:
2179:
2175:
2169:
2167:
2166:noise margins
2151:transistors M
2150:
2145:
2143:
2138:
2134:
2132:
2128:
2119:
2115:
2113:
2109:
2104:
2100:
2096:
2092:
2085:
2076:
2064:
2061:
2058:
2055:
2052:
2048:
2044:
2043:
2037:
2035:
2031:
2026:
2022:
2018:
2014:
2010:
2006:
2002:
1994:
1991:
1988:
1984:
1981:
1980:
1972:
1969:
1966:
1965:
1956:
1952:
1949:
1946:
1942:
1938:
1935:
1934:
1928:
1926:
1917:
1915:
1904:Types of SRAM
1901:
1889:
1885:
1881:
1878:
1875:
1872:
1869:
1866:
1865:register file
1862:
1859:
1855:
1851:
1847:
1844:
1840:
1836:
1835:
1834:
1826:
1824:
1819:
1817:
1813:
1809:
1805:
1801:
1797:
1793:
1790:SRAM caches,
1789:
1786:and external
1785:
1781:
1777:
1767:
1765:
1761:
1756:
1754:
1750:
1738:
1734:
1730:
1725:
1718:
1714:
1710:
1707:as seen by a
1706:
1702:
1697:
1688:
1686:
1681:
1678:
1676:
1672:
1662:
1660:
1656:
1652:
1647:
1645:
1641:
1638:
1634:
1629:
1627:
1622:
1620:
1616:
1603:
1599:
1595:
1592:and internal
1591:
1587:
1584:
1581:
1577:
1576:
1575:
1573:
1569:
1565:
1560:
1558:
1554:
1550:
1546:
1542:
1538:
1527:
1522:
1520:
1515:
1513:
1508:
1507:
1505:
1504:
1496:
1493:
1490:
1489:Bubble memory
1487:
1484:
1481:
1478:
1475:
1472:
1469:
1466:
1463:
1460:
1457:
1454:
1451:
1448:
1445:
1443:
1440:
1437:
1434:
1431:
1428:
1425:
1422:
1421:
1415:
1414:
1407:
1404:
1402:
1399:
1397:
1394:
1392:
1389:
1387:
1384:
1382:
1379:
1375:
1372:
1371:
1370:
1367:
1365:
1362:
1360:
1357:
1355:
1352:
1350:
1347:
1345:
1342:
1340:
1337:
1336:
1330:
1329:
1322:
1319:
1315:
1312:
1310:
1307:
1305:
1302:
1300:
1297:
1295:
1292:
1290:
1287:
1285:
1282:
1280:
1277:
1275:
1272:
1270:
1267:
1265:
1262:
1260:
1257:
1255:
1252:
1250:
1247:
1245:
1242:
1240:
1237:
1235:
1232:
1230:
1227:
1225:
1222:
1220:
1217:
1214:
1211:
1209:
1206:
1204:
1201:
1200:
1199:
1196:
1195:
1192:
1187:
1186:
1179:
1176:
1172:
1169:
1167:
1164:
1162:
1159:
1157:
1154:
1152:
1149:
1147:
1144:
1142:
1139:
1137:
1134:
1132:
1129:
1127:
1124:
1122:
1119:
1117:
1116:Cassette tape
1114:
1112:
1111:Videocassette
1109:
1107:
1104:
1101:
1098:
1096:
1093:
1091:
1088:
1086:
1083:
1081:
1080:Magnetic tape
1078:
1076:
1073:
1072:
1071:
1068:
1066:
1063:
1061:
1058:
1056:
1053:
1051:
1048:
1047:
1044:
1039:
1038:
1031:
1028:
1026:
1023:
1021:
1018:
1017:
1014:
1008:
1007:
1000:
997:
995:
992:
989:
986:
984:
981:
978:
974:
971:
969:
966:
964:
961:
960:
957:
952:
951:
944:
941:
937:
934:
932:
929:
927:
924:
922:
919:
917:
914:
912:
909:
907:
904:
902:
899:
897:
894:
892:
889:
887:
884:
883:
882:
879:
875:
872:
870:
867:
865:
862:
859:
856:
853:
850:
847:
844:
843:
841:
838:
836:
835:ROM cartridge
833:
829:
826:
824:
821:
820:
819:
816:
814:
811:
809:
806:
805:
802:
797:
796:
793:
790:
789:
781:
778:
775:
772:
770:
767:
764:
761:
758:
755:
752:
749:
746:
743:
742:
736:
735:
726:
723:
722:
721:
718:
716:
713:
711:
708:
705:
702:
700:
697:
695:
692:
688:
685:
684:
683:
680:
676:
673:
671:
668:
666:
663:
661:
658:
656:
653:
651:
648:
646:
643:
641:
638:
636:
633:
631:
628:
626:
623:
622:
621:
618:
614:
611:
609:
606:
605:
604:
601:
600:
597:
592:
591:
588:
585:
584:
577:
574:
572:
569:
567:
564:
562:
561:Dew computing
559:
557:
554:
552:
551:Fog computing
549:
547:
546:Cloud storage
544:
542:
539:
537:
534:
532:
529:
527:
526:Memory paging
524:
522:
519:
517:
514:
512:
509:
507:
504:
502:
499:
497:
494:
492:
489:
487:
484:
482:
479:
477:
474:
472:
469:
467:
464:
462:
459:
457:
454:
452:
449:
447:
444:
442:
439:
437:
434:
432:
429:
427:
424:
422:
419:
417:
414:
412:
409:
407:
404:
402:
399:
397:
394:
392:
389:
387:
384:
382:
379:
377:
374:
372:
369:
367:
364:
362:
361:File deletion
359:
357:
354:
352:
351:Computer file
349:
347:
344:
342:
339:
337:
334:
332:
329:
327:
324:
322:
319:
317:
314:
312:
309:
307:
304:
302:
299:
297:
294:
292:
289:
287:
284:
282:
279:
277:
274:
272:
269:
267:
264:
262:
259:
257:
254:
252:
249:
247:
244:
242:
239:
237:
234:
232:
231:Data recovery
229:
227:
224:
222:
219:
217:
216:Data security
214:
212:
209:
207:
204:
202:
199:
197:
194:
192:
189:
187:
184:
182:
179:
177:
174:
172:
169:
167:
164:
162:
159:
155:
152:
150:
147:
146:
145:
142:
140:
137:
135:
132:
130:
127:
125:
122:
120:
117:
113:
112:floating-gate
110:
109:
108:
105:
103:
100:
98:
95:
93:
90:
88:
85:
83:
80:
78:
75:
73:
70:
69:
63:
62:
58:
54:
51:
50:
44:
39:
33:
19:
3357:Types of RAM
3299:
3280:
3271:
3246:
3242:
3232:
3221:
3209:
3198:. Retrieved
3191:the original
3186:
3173:
3165:the original
3155:
3143:
3113:
3083:(10): 2303.
3080:
3076:
3070:
3050:
3043:
3008:
2984:. Retrieved
2971:
2950:
2943:
2932:. Retrieved
2923:
2914:
2905:
2896:
2886:
2877:
2867:
2857:, retrieved
2849:
2843:
2832:. Retrieved
2822:
2811:. Retrieved
2796:
2775:. Retrieved
2763:
2753:
2743:, retrieved
2737:
2731:
2720:. Retrieved
2716:the original
2711:
2702:
2693:
2689:
2676:
2656:
2649:
2630:
2619:
2585:
2574:
2565:
2553:. Retrieved
2547:
2538:
2513:Flash memory
2482:
2466:
2459:
2448:
2436:
2433:Bus behavior
2377:
2367:
2344:
2330:
2304:
2302:
2294:
2288:
2282:
2276:
2271:
2261:January 2023
2258:
2251:Please help
2243:
2216:
2198:
2182:
2170:
2148:
2146:
2139:
2135:
2127:video memory
2124:
2112:static power
2102:
2087:
2081:
2050:
2046:
1998:
1983:Asynchronous
1923:
1912:
1898:
1886:(FPGAs) and
1848:the on-chip
1832:
1823:memory cards
1820:
1773:
1770:In computers
1758:SRAM in its
1757:
1752:
1746:
1743:Embedded use
1715:using a 180-
1691:Applications
1682:
1679:
1668:
1648:
1637:tunnel diode
1630:
1623:
1612:
1571:
1563:
1561:
1544:
1540:
1536:
1535:
1436:Punched tape
1430:Punched card
1396:Time crystal
1264:Hyper CD-ROM
1203:Optical disc
1095:Tape library
1030:FeFET memory
1011:Early-stage
891:CompactFlash
886:Memory Stick
846:Flash memory
808:Diode matrix
792:Non-volatile
681:
576:Kryder's law
566:Amdahl's law
491:Software rot
466:Logical disk
366:File copying
301:Data storage
256:File sharing
241:Data cluster
57:data storage
3277:"CiteSeerX"
2636:US 3354440A
2491:fabricated
2208:2 = 2,048 =
2168:and speed.
2108:polysilicon
2099:transistors
2001:main memory
1993:Synchronous
1977:By function
1837:the RAM in
1821:Some early
1800:LCD screens
1782:, internal
1778:, internal
1760:dual-ported
1602:main memory
1495:Floppy disk
1447:Drum memory
881:Memory card
848:is used in:
782:(2002–2010)
747:(1946–1947)
571:Moore's law
416:Boot sector
356:Object file
261:File system
72:Memory cell
3346:Categories
3249:(1): 1–8.
3200:2013-02-01
2986:2019-05-04
2934:2024-04-12
2859:2019-05-04
2834:2020-03-24
2813:2021-09-14
2777:2008-02-27
2745:2023-01-28
2722:2023-02-01
2530:References
2487:-purposed
2195:words, or
2040:By feature
2013:hard disks
1788:burst mode
1784:GPU caches
1780:CPU caches
1766:circuits.
1633:transistor
1541:static RAM
1418:Historical
1090:Tape drive
916:SmartMedia
739:Historical
436:Disk image
431:Disk array
306:Data store
107:MOS memory
97:Memory map
18:Static RAM
3285:CiteSeerX
3281:CiteSeerX
3263:108574841
3035:258984439
2741:, c. 1970
2197:2 Ă—
2091:SRAM cell
2030:CPU cache
2017:DDR SDRAM
1953:(used in
1939:(used in
1895:Hobbyists
1794:buffers,
1792:hard disk
1729:nanometre
1717:nanometre
1644:resistors
1635:gate and
1594:registers
1580:refreshed
1562:The term
1477:Disk pack
1442:Plugboard
1279:DVD-Video
1208:LaserDisc
1106:Videotape
977:3D XPoint
968:Memristor
608:CPU cache
376:Core dump
296:Data bank
246:Directory
3310:EE Times
2982:. Micron
2621:EE Times
2507:See also
2479:Research
2469:STT-MRAM
2374:SR-latch
2289:Writing:
2283:Reading:
2277:Standby:
2025:pipeline
1890:(CPLDs).
1843:megabyte
1804:printers
1659:rubylith
1406:UltraRAM
1284:DVD card
1239:Video CD
1224:CD Video
994:Nano-RAM
963:Memistor
936:XQD card
911:SIM card
769:Dekatron
655:XDR DRAM
650:EDO DRAM
587:Volatile
381:Hex dump
291:Database
186:Metadata
181:Big data
34:(SDRAM).
3135:6397769
3085:Bibcode
2915:3.14.by
2555:19 June
2364:Writing
2327:Reading
2299:Standby
2142:1T-SRAM
2093:. Each
2084:MOSFETs
1971:Ternary
1882:and in
1609:History
1572:dynamic
1491:(~1970)
1485:(~1968)
1467:(1960s)
1304:Blu-ray
1294:MiniDVD
1289:DVD-RAM
1249:Mini CD
1191:Optical
1151:U-matic
1146:MicroMV
1126:Betamax
990:(ECRAM)
931:MicroP2
906:SD card
896:PC Card
687:1T-SRAM
645:QDRSRAM
236:Storage
66:General
3287:
3261:
3133:
3105:699469
3103:
3058:
3033:
3023:
2959:
2897:PC Mag
2878:PC Mag
2804:
2664:
2642:
2451:FinFET
2305:access
2149:access
2103:access
2070:Design
1967:Binary
1951:MOSFET
1850:caches
1816:VIC-20
1814:, and
1796:router
1564:static
1497:(1971)
1479:(1962)
1473:(1962)
1461:(1957)
1455:(1949)
1449:(1932)
1438:(1725)
1432:(1725)
1426:(1725)
1299:HD DVD
1259:CD-ROM
1215:(CDDA)
1141:MiniDV
860:(SSHD)
842:(SSS)
828:EEPROM
776:(2009)
765:(1952)
759:(1951)
753:(1947)
371:Backup
3259:S2CID
3194:(PDF)
3183:(PDF)
3131:S2CID
3101:S2CID
3031:S2CID
2980:(PDF)
2854:(PDF)
2686:(PDF)
2594:(PDF)
2473:F-RAM
2425:and M
2417:and M
2409:and M
2385:and M
2351:and M
2311:and M
2155:and M
2047:write
2034:FIFOs
1753:ESRAM
1685:power
1640:latch
1596:of a
1590:cache
1359:ECRAM
1339:CBRAM
1274:DVD+R
1234:CD-RW
1171:D-VHS
1166:VHS-C
1161:S-VHS
1102:(DDS)
1025:ReRAM
1020:FeRAM
1013:NVRAM
999:CBRAM
956:NVRAM
854:(SSD)
823:EPROM
780:Z-RAM
774:T-RAM
706:(CAM)
694:ReRAM
660:RDRAM
640:LPDDR
635:SGRAM
630:SDRAM
625:eDRAM
59:types
3056:ISBN
3021:ISBN
2957:ISBN
2802:ISBN
2662:ISBN
2557:2019
2489:28nm
2471:and
2129:and
2051:read
2007:and
1987:6264
1955:CMOS
1943:and
1808:ZX80
1802:and
1626:CMOS
1568:DRAM
1545:SRAM
1349:NRAM
1321:WORM
1229:CD-R
983:MRAM
818:PROM
813:MROM
715:VRAM
699:QRAM
682:SRAM
670:GDDR
620:DRAM
516:RAID
166:Data
55:and
3251:doi
3123:doi
3093:doi
3013:doi
2768:doi
2485:IoT
2438:RAM
2401:, M
2393:, M
2144:).
2095:bit
2049:to
2011:to
1945:ECL
1941:TTL
1854:x86
1701:die
1598:CPU
1543:or
1269:DVD
1156:VHS
973:PCM
926:SxS
801:ROM
675:HBM
665:DDR
596:RAM
3348::
3330:.
3318:^
3308:.
3283:.
3279:.
3257:.
3247:22
3245:.
3241:.
3185:.
3129:.
3099:.
3091:.
3081:42
3079:.
3029:.
3019:.
3007:.
2995:^
2913:.
2895:.
2876:.
2786:^
2766:.
2762:.
2710:.
2692:.
2688:.
2618:.
2602:^
2573:.
2546:.
2493:IC
2475:.
2462:dd
2370:BL
2357:BL
2341:BL
2161:BL
2089:6T
1867:),
1858:KB
1845:),
1818:.
1810:,
1677:.
1661:.
1617:.
1219:CD
1136:DV
3334:.
3312:.
3293:.
3253::
3203:.
3137:.
3125::
3107:.
3095::
3087::
3037:.
3015::
2989:.
2965:.
2937:.
2917:.
2837:.
2816:.
2780:.
2770::
2725:.
2694:5
2670:.
2624:.
2596:.
2579:.
2559:.
2427:2
2423:1
2419:2
2415:1
2411:4
2407:3
2403:4
2399:2
2395:3
2391:1
2387:6
2383:5
2378:1
2353:6
2349:5
2345:1
2333:6
2321:4
2317:1
2313:6
2309:5
2263:)
2259:(
2248:.
2212:k
2210:2
2204:2
2199:n
2193:2
2189:n
2185:m
2157:6
2153:5
1873:,
1604:.
1582:.
1570:(
1539:(
1525:e
1518:t
1511:v
979:)
975:(
20:)
Text is available under the Creative Commons Attribution-ShareAlike License. Additional terms may apply.
