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27:
132:, with V being short for vertical. Being a vertical device, the SIT structure offers advantages in obtaining higher breakdown voltages than a conventional FET. For the SIT, the breakdown voltage is not limited by the surface breakdown between gate and drain, allowing it to operate at a very high current and voltage. The SIT has a current-voltage characteristic similar to a
128:(FET) capable of high-speed and high-power operation, with low distortion and low noise. It is a vertical structure device with short multichannel. The device was originally known as a
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from 1973-1980. The Sony n-channel SIT had the model number 2SK82 with its p-channel complement named 2SJ28.
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and it was therefore used in high-end audio products, including power amplifiers from
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231:"Field-effect transistor versus analog transistor (static induction transistor)"
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F. Patrick McCluskey; Thomas
Podlesak; Richard Grzybowski, eds. (1996).
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177:short turn-on and turn-off time, typically 0.25 μs
1432:
273:"The Sony VFET Amplifier 40 Year Commemorative"
1415:
343:
18:Type of junction-gate field effect transistor
266:
264:
53:introducing citations to additional sources
186:The SIT was invented by Japanese engineers
1422:
1408:
350:
336:
357:
261:
229:Nishizawa, Jun-ichi (December 15, 1974).
228:
43:Relevant discussion may be found on the
1433:
1390:This electronics-related article is a
331:
235:IEEE Transactions on Electron Devices
174:high audio frequency power capability
1378:
782:Three-dimensional integrated circuit
270:
140:in the second half of the 1970s and
20:
563:Programmable unijunction transistor
13:
464:Multi-gate field-effect transistor
147:
14:
1472:
442:Insulated-gate bipolar transistor
1382:
686:Heterostructure barrier varactor
413:Chemical field-effect transistor
36:relies largely or entirely on a
25:
734:Mixed-signal integrated circuit
293:
222:
1:
215:
64:"Static induction transistor"
1394:. You can help Knowledge by
765:Silicon controlled rectifier
627:Organic light-emitting diode
517:Diffused junction transistor
303:High Temperature Electronics
7:
569:Static induction transistor
506:Bipolar junction transistor
458:MOS field-effect transistor
430:Fin field-effect transistor
193:
162:low gate-source capacitance
118:static induction transistor
10:
1477:
1377:
776:Static induction thyristor
205:Static induction thyristor
181:
159:low gate series resistance
1313:
1213:
1180:
1112:
1049:
977:
945:(Hexode, Heptode, Octode)
883:
815:
697:Hybrid integrated circuit
661:
589:
540:Light-emitting transistor
494:
376:
365:
190:and Y. Watanabe in 1950.
992:Backward-wave oscillator
702:Light emitting capacitor
558:Point-contact transistor
528:Junction Gate FET (JFET)
165:small thermal resistance
1003:Crossed-field amplifier
522:Field-effect transistor
247:10.1109/T-ED.1975.18103
200:SIT-based Audio devices
126:field-effect transistor
1172:Voltage-regulator tube
739:MOS integrated circuit
604:Constant-current diode
580:Unijunction transistor
1446:Semiconductor devices
1241:Electrolytic detector
1014:Inductive output tube
830:Low-dropout regulator
745:Organic semiconductor
676:Printed circuit board
512:Darlington transistor
359:Electronic components
271:Pass, Nelson (2013).
1451:Solid state switches
1059:Beam deflection tube
728:Metal-oxide varistor
621:Light-emitting diode
475:Thin-film transistor
436:Floating-gate MOSFET
156:short channel length
49:improve this article
1461:Japanese inventions
1035:Traveling-wave tube
835:Switching regulator
671:Printed electronics
648:Step recovery diode
425:Depletion-load NMOS
1340:Crystal oscillator
1200:Variable capacitor
875:Switched capacitor
817:Voltage regulators
691:Integrated circuit
575:Tetrode transistor
553:Pentode transistor
546:Organic LET (OLET)
533:Organic FET (OFET)
188:Jun-ichi Nishizawa
134:vacuum tube triode
1456:Power electronics
1441:Electronics stubs
1403:
1402:
1375:
1374:
1335:Ceramic resonator
1147:Mercury-arc valve
1099:Video camera tube
1051:Cathode-ray tubes
811:
810:
419:Complementary MOS
114:
113:
99:
1468:
1424:
1417:
1410:
1386:
1379:
1229:electrical power
1114:Gas-filled tubes
998:Cavity magnetron
825:Linear regulator
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1224:audio and video
1209:
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954:Photomultiplier
879:
807:
755:Quantum circuit
663:
657:
599:Avalanche diode
585:
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148:Characteristics
124:) is a type of
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1303:Wollaston wire
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1084:Selectron tube
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1074:Magic eye tube
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643:Schottky diode
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310:. p. 82.
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241:(4): 185–197.
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171:low distortion
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47:. Please help
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1365:mercury relay
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1188:Potentiometer
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1105:
1104:Williams tube
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923:Fleming valve
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750:Photodetector
748:
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729:
726:
724:
721:
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718:Memtransistor
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375:
372:
370:
367:Semiconductor
364:
360:
353:
348:
346:
341:
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333:
330:
319:
317:0-8493-9623-9
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73:
69:
66: –
65:
61:
60:Find sources:
54:
50:
46:
40:
39:
38:single source
34:This article
32:
28:
23:
22:
16:
1396:expanding it
1389:
1122:Cold cathode
1089:Storage tube
979:Vacuum tubes
928:Neutron tube
903:Beam tetrode
885:Vacuum tubes
568:
470:Power MOSFET
302:
295:
283:. Retrieved
279:
238:
234:
224:
185:
151:
129:
121:
117:
115:
105:January 2019
102:
92:
85:
78:
71:
59:
35:
15:
1288:Transformer
1030:Sutton tube
870:Charge pump
723:Memory cell
653:Zener diode
615:Laser diode
498:transistors
380:transistors
152:A SIT has:
1435:Categories
1360:reed relay
1350:Parametron
1283:Thermistor
1261:resettable
1220:Connector
1181:Adjustable
1157:Nixie tube
1127:Crossatron
1094:Trochotron
1069:Iconoscope
1064:Charactron
1041:X-ray tube
913:Compactron
893:Acorn tube
850:Buck–boost
771:Solaristor
633:Photodiode
610:Gunn diode
606:(CLD, CRD)
388:Transistor
285:August 17,
280:First Watt
216:References
75:newspapers
1323:Capacitor
1167:Trigatron
1162:Thyratron
1152:Neon lamp
1079:Monoscope
959:Phototube
943:Pentagrid
908:Barretter
793:Trancitor
788:Thyristor
713:Memristor
638:PIN diode
415:(ChemFET)
308:CRC Press
168:low noise
45:talk page
1345:Inductor
1315:Reactive
1293:Varistor
1273:Resistor
1251:Antifuse
1137:Ignitron
1132:Dekatron
1020:Klystron
1009:Gyrotron
938:Nuvistor
855:Split-pi
741:(MOS IC)
708:Memistor
466:(MuGFET)
460:(MOSFET)
432:(FinFET)
255:37015648
194:See also
1246:Ferrite
1214:Passive
1205:Varicap
1193:digital
1142:Krytron
964:Tetrode
949:Pentode
803:Varicap
784:(3D IC)
760:RF CMOS
664:devices
438:(FGMOS)
369:devices
182:History
89:scholar
1278:Switch
969:Triode
933:Nonode
898:Audion
778:(SITh)
662:Other
629:(OLED)
591:Diodes
542:(LET)
524:(FET)
496:Other
444:(IGBT)
421:(CMOS)
408:BioFET
403:BiCMOS
314:
253:
142:Yamaha
91:
84:
77:
70:
62:
1355:Relay
1328:types
1266:eFUSE
1037:(TWT)
1025:Maser
1016:(IOT)
1005:(CFA)
994:(BWO)
918:Diode
865:SEPIC
845:Boost
798:TRIAC
767:(SCR)
730:(MOV)
704:(LEC)
623:(LED)
582:(UJT)
571:(SIT)
565:(PUT)
508:(BJT)
477:(TFT)
453:LDMOS
448:ISFET
276:(PDF)
251:S2CID
96:JSTOR
82:books
1392:stub
1298:Wire
1256:Fuse
840:Buck
693:(IC)
681:DIAC
617:(LD)
486:UMOS
481:VMOS
398:PMOS
393:NMOS
378:MOS
312:ISBN
287:2022
210:JFET
138:Sony
130:VFET
116:The
68:news
860:Ćuk
243:doi
122:SIT
51:by
1437::
1234:RF
983:RF
306:.
278:.
263:^
249:.
239:22
237:.
233:.
1423:e
1416:t
1409:v
1398:.
985:)
981:(
351:e
344:t
337:v
320:.
289:.
257:.
245::
120:(
107:)
103:(
93:·
86:·
79:·
72:·
55:.
41:.
Text is available under the Creative Commons Attribution-ShareAlike License. Additional terms may apply.