855:
22:
558:
700:
148:
recombination energies. Therefore, depending on the position where an exciton recombines the emitted light has a different energy. The alloy broadening is an inhomogeneous line broadening, meaning that its shape is
Gaussian.
324:
263:
209:
475:
393:
467:
440:
590:
413:
348:
598:
896:
798:
Schubert, E. F.; Göbel, E. O.; Horikoshi, Y.; Ploog, K.; Queisser, H. J. (1984-07-15). "Alloy broadening in photoluminescence spectra of Al
271:
157:
In the mathematical description it is assumed that no clustering occurs within the alloy. Then, for a binary alloy of the form
86:
469:. The band gap energy can be considered to be the fluorescence energy. Therefore, the standard deviation in fluorescence is
889:
727:
58:
65:
563:
As the alloy broadening belongs to the group of inhomogeneous broadenings the line shape of the fluorescence intensity
915:
105:
39:
882:
72:
43:
54:
214:
553:{\displaystyle \Delta E={\frac {\mathrm {d} E_{g}}{\mathrm {d} x}}\cdot {\sqrt {x\cdot {\frac {1-x}{N}}}}}
920:
160:
353:
32:
732:
79:
815:
758:
445:
418:
870:
566:
132:
The alloy broadening is one of the line broadening mechanisms. The random distribution of
8:
819:
762:
695:{\displaystyle I(E)\sim \exp \left(-{\frac {(E-E_{0})^{2}}{2\cdot \Delta E^{2}}}\right)}
862:
398:
333:
831:
774:
723:
750:
823:
766:
141:
866:
136:
in an alloy causes a different material composition at different positions. In
909:
835:
770:
137:
122:
827:
736:
778:
854:
125:
broadening mechanism caused by random distribution of the atoms in an
140:
and insulators the different material composition leads to different
21:
145:
415:
being the atoms per volume. In general, the band gap energy
126:
797:
442:
of a semiconducting alloy depends on the composition, i.e.
133:
319:{\displaystyle \Delta x={\sqrt {\frac {x\cdot (1-x)}{N}}}}
265:, the standard deviation of the composition is given by:
350:
is the number of atoms within the excitons' volume, i.e.
251:
238:
197:
184:
748:
601:
569:
478:
448:
421:
401:
356:
336:
274:
217:
163:
46:. Unsourced material may be challenged and removed.
694:
584:
552:
461:
434:
407:
387:
342:
318:
257:
203:
751:"Near-band-gap photoluminescence of Si-Ge alloys"
907:
757:, vol. 40, no. 8, pp. 5683–5693,
814:(2). American Physical Society (APS): 813–820.
890:
897:
883:
227:
173:
106:Learn how and when to remove this message
908:
718:Bahaa E. A. Saleh, Malvin Carl Teich:
258:{\displaystyle {\ce {Si_{1-x}Ge_{x}}}}
849:
204:{\displaystyle {\ce {A_{1-x}B_{x}}}}
44:adding citations to reliable sources
15:
13:
671:
509:
492:
479:
275:
14:
932:
853:
388:{\displaystyle N=V_{exc}\cdot n}
20:
749:J. Weber, M. I. Alonso (1989),
152:
31:needs additional citations for
791:
742:
712:
654:
634:
611:
605:
579:
573:
306:
294:
1:
705:
869:. You can help Knowledge by
7:
788:, Format: PDF, KBytes: 2005
10:
937:
848:
916:Physical chemistry stubs
771:10.1103/PhysRevB.40.5683
720:Grundlagen der Photonik.
828:10.1103/physrevb.30.813
144:. This gives different
865:-related article is a
696:
586:
554:
463:
436:
409:
389:
344:
320:
259:
205:
697:
587:
555:
464:
462:{\displaystyle E_{g}}
437:
435:{\displaystyle E_{g}}
410:
390:
345:
321:
260:
206:
599:
585:{\displaystyle I(E)}
567:
476:
446:
419:
399:
354:
334:
272:
215:
161:
40:improve this article
820:1984PhRvB..30..813S
763:1989PhRvB..40.5683W
253:
240:
199:
186:
921:Physical chemistry
863:physical chemistry
692:
582:
550:
459:
432:
405:
385:
340:
316:
255:
241:
219:
201:
187:
165:
55:"Alloy broadening"
878:
877:
808:Physical Review B
728:978-3-527-40677-7
685:
548:
546:
517:
408:{\displaystyle n}
343:{\displaystyle N}
314:
313:
248:
244:
235:
222:
194:
190:
181:
168:
142:band gap energies
116:
115:
108:
90:
928:
899:
892:
885:
857:
850:
840:
839:
795:
789:
787:
786:
785:
746:
740:
716:
701:
699:
698:
693:
691:
687:
686:
684:
683:
682:
663:
662:
661:
652:
651:
632:
591:
589:
588:
583:
559:
557:
556:
551:
549:
547:
542:
531:
523:
518:
516:
512:
506:
505:
504:
495:
489:
468:
466:
465:
460:
458:
457:
441:
439:
438:
433:
431:
430:
414:
412:
411:
406:
394:
392:
391:
386:
378:
377:
349:
347:
346:
341:
325:
323:
322:
317:
315:
309:
286:
285:
264:
262:
261:
256:
254:
252:
249:
246:
242:
239:
236:
233:
232:
220:
210:
208:
207:
202:
200:
198:
195:
192:
188:
185:
182:
179:
178:
166:
119:Alloy broadening
111:
104:
100:
97:
91:
89:
48:
24:
16:
936:
935:
931:
930:
929:
927:
926:
925:
906:
905:
904:
903:
846:
844:
843:
805:
801:
796:
792:
783:
781:
747:
743:
735:, p. PA825, at
717:
713:
708:
678:
674:
664:
657:
653:
647:
643:
633:
631:
627:
623:
600:
597:
596:
568:
565:
564:
532:
530:
522:
508:
507:
500:
496:
491:
490:
488:
477:
474:
473:
453:
449:
447:
444:
443:
426:
422:
420:
417:
416:
400:
397:
396:
367:
363:
355:
352:
351:
335:
332:
331:
287:
284:
273:
270:
269:
250:
245:
237:
228:
223:
218:
216:
213:
212:
196:
191:
183:
174:
169:
164:
162:
159:
158:
155:
112:
101:
95:
92:
49:
47:
37:
25:
12:
11:
5:
934:
924:
923:
918:
902:
901:
894:
887:
879:
876:
875:
858:
842:
841:
803:
799:
790:
741:
710:
709:
707:
704:
703:
702:
690:
681:
677:
673:
670:
667:
660:
656:
650:
646:
642:
639:
636:
630:
626:
622:
619:
616:
613:
610:
607:
604:
592:is Gaussian:
581:
578:
575:
572:
561:
560:
545:
541:
538:
535:
529:
526:
521:
515:
511:
503:
499:
494:
487:
484:
481:
456:
452:
429:
425:
404:
384:
381:
376:
373:
370:
366:
362:
359:
339:
328:
327:
312:
308:
305:
302:
299:
296:
293:
290:
283:
280:
277:
231:
226:
177:
172:
154:
151:
138:semiconductors
114:
113:
28:
26:
19:
9:
6:
4:
3:
2:
933:
922:
919:
917:
914:
913:
911:
900:
895:
893:
888:
886:
881:
880:
874:
872:
868:
864:
859:
856:
852:
851:
847:
837:
833:
829:
825:
821:
817:
813:
809:
794:
780:
776:
772:
768:
764:
760:
756:
752:
745:
738:
734:
733:
730:, Seite 825 (
729:
725:
721:
715:
711:
688:
679:
675:
668:
665:
658:
648:
644:
640:
637:
628:
624:
620:
617:
614:
608:
602:
595:
594:
593:
576:
570:
543:
539:
536:
533:
527:
524:
519:
513:
501:
497:
485:
482:
472:
471:
470:
454:
450:
427:
423:
402:
382:
379:
374:
371:
368:
364:
360:
357:
337:
310:
303:
300:
297:
291:
288:
281:
278:
268:
267:
266:
229:
224:
175:
170:
150:
147:
143:
139:
135:
130:
128:
124:
123:spectral-line
120:
110:
107:
99:
88:
85:
81:
78:
74:
71:
67:
64:
60:
57: –
56:
52:
51:Find sources:
45:
41:
35:
34:
29:This article
27:
23:
18:
17:
871:expanding it
860:
845:
811:
807:
793:
782:, retrieved
755:Phys. Rev. B
754:
744:
737:Google Books
731:
719:
714:
562:
329:
156:
153:Binary alloy
131:
118:
117:
102:
93:
83:
76:
69:
62:
50:
38:Please help
33:verification
30:
722:Wiley-VCH,
910:Categories
784:2018-06-15
706:References
66:newspapers
836:0163-1829
672:Δ
669:⋅
641:−
629:−
621:
615:∼
537:−
528:⋅
520:⋅
480:Δ
380:⋅
301:−
292:⋅
276:Δ
230:−
176:−
96:July 2018
816:Bibcode
779:9992606
759:Bibcode
211:, e.g.
146:exciton
80:scholar
834:
777:
726:
330:where
82:
75:
68:
61:
53:
861:This
806:As".
395:with
134:atoms
127:alloy
121:is a
87:JSTOR
73:books
867:stub
832:ISSN
775:PMID
724:ISBN
59:news
824:doi
804:1−x
767:doi
618:exp
42:by
912::
830:.
822:.
812:30
810:.
802:Ga
773:,
765:,
753:,
739:).
243:Ge
221:Si
129:.
898:e
891:t
884:v
873:.
838:.
826::
818::
800:x
769::
761::
689:)
680:2
676:E
666:2
659:2
655:)
649:0
645:E
638:E
635:(
625:(
612:)
609:E
606:(
603:I
580:)
577:E
574:(
571:I
544:N
540:x
534:1
525:x
514:x
510:d
502:g
498:E
493:d
486:=
483:E
455:g
451:E
428:g
424:E
403:n
383:n
375:c
372:x
369:e
365:V
361:=
358:N
338:N
326:,
311:N
307:)
304:x
298:1
295:(
289:x
282:=
279:x
247:x
234:x
225:1
193:x
189:B
180:x
171:1
167:A
109:)
103:(
98:)
94:(
84:·
77:·
70:·
63:·
36:.
Text is available under the Creative Commons Attribution-ShareAlike License. Additional terms may apply.
