171:
90:
3074:
589:
1100:
1909:
1085:
632:
158:
1921:
475:
533:
3550:
3060:
1885:
diode the forward current increases exponentially with forward bias voltage due to the exponential increase in carrier densities, so there is always some current at even very small values of applied voltage. However, if one is interested in some particular current level, it will require a "knee"
1543:
The gradient driving the diffusion is then the difference between the large excess minority carrier densities at the barrier and the low densities in the bulk, and that gradient drives diffusion of minority carriers from the interface into the bulk. The injected minority carriers are reduced in
3970:. In any event, in reverse bias the diode resistance becomes quite large, although not infinite as the ideal diode law suggests, and the assumption that it is less than the Norton resistance of the driver may not be accurate. The junction capacitance is small and depends upon the reverse bias
3290:
2035:
When the reverse bias is applied, the electric field in the depletion region is increased, pulling the electrons and holes further apart than in the zero bias case. Thus, any current that flows is due to the very weak process of carrier generation inside the depletion region due to
1768:
Because this barrier is located in the oppositely doped material, the injected carriers at the barrier position are now minority carriers. As recombination takes hold, the minority carrier densities drop with depth to their equilibrium values for bulk minority carriers, a factor
218:). Above this voltage the slope of the current-voltage curve is not infinite (on-resistance is not zero). In the reverse direction the diode conducts a nonzero leakage current (exaggerated by a smaller scale in the figure) and at a sufficiently large reverse voltage below the
1538:
3390:
342:
3718:
2492:
670:(dashed horizontal straight line) is situated at a constant level. This level ensures that in the field-free bulk on both sides of the junction the hole and electron occupancies are correct. (So, for example, it is not necessary for an electron to leave the
4096:
2167:
964:
1048:
charges due to dopant ions. The near absence of mobile charge in the depletion layer means that the mobile charges present are insufficient to balance the immobile charge contributed by the dopant ions: a negative charge on the
2923:
2698:
1574:, recombination of electrons and holes is accompanied by emission of light of a wavelength related to the energy gap between valence and conduction bands, so the diode converts a portion of the forward current into light.
1890:). Above the knee, the current continues to increase exponentially. Some special diodes, such as some varactors, are designed deliberately to maintain a low current level up to some knee voltage in the forward direction.
1261:
side. The gradient driving this transfer is set up as follows: in the bulk distant from the interface, minority carriers have a very low concentration compared to majority carriers, for example, electron density on the
1110:
diode. The figure assumes recombination is confined to the regions where majority carrier concentration is near the bulk values, which is not accurate when recombination-generation centers in the field region play a
3164:
1709:
4357:
2857:
118:-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, in the detection of radio signals, and emitting and detecting light.
3545:{\displaystyle {\frac {V_{\text{O}}}{I_{\text{S}}}}={\frac {(R_{\text{S}}{\mathit {\parallel }}r_{\text{D}})}{1+j\omega (C_{\text{D}}+C_{\text{J}})(R_{\text{S}}{\mathit {\parallel }}r_{\text{D}})}}\ ,}
1411:
853:
611:
discontinuity at the plane where they encounter each other. The objective is to explain the various bias regimes in the figure displaying current-voltage characteristics. Operation is described using
3927:
1819:
1316:
757:
243:
3610:
615:
that show how the lowest conduction band energy and the highest valence band energy vary with position inside the diode under various bias conditions. For additional discussion, see the articles
2022:
1207:
3867:
1399:
3824:
2365:
2044:, reverse current is introduced using creation of holes and electrons in the depletion region by incident light, thus converting a portion of the incident light into an electric current.
1865:
1638:
2392:
1981:
so the two bulk occupancy levels are separated again by an energy determined by the applied voltage. As shown in the diagram, this behavior means the step in band edges is increased to
4006:
650:
diode; that is, the band edges for the conduction band (upper line) and the valence band (lower line) are shown as a function of position on both sides of the junction between the
2620:
and the capacitance is accordingly decreased. Thus, the junction serves as a voltage-controllable capacitor. In a simplified one-dimensional model, the junction capacitance is:
1736:
429:
460:
3754:
2768:
4135:
3998:
3784:
1979:
1766:
3960:
3602:
3374:
3347:
3320:
3152:
3125:
2887:
2618:
2553:
2526:
2317:
2260:
2229:
2200:
1347:
1234:
1021:
994:
792:
399:
372:
2803:
exists expressing the change in minority carrier charge that occurs with a change in forward bias. In terms of the stored minority carrier charge, the diode current is:
2741:
2079:
130:
semiconductor diodes, both adapted to increase the voltage the devices can withstand in reverse bias. The top structure uses a mesa to avoid a sharp curvature of the
2907:
2792:
2721:
2282:
1583:
that vary with position. As shown in the figure, the electron quasi-Fermi level shifts with position, from the half-occupancy equilibrium Fermi level in the
1566:
3055:{\displaystyle C_{\text{D}}={\frac {dQ_{\text{D}}}{dv_{\text{D}}}}=\tau {\frac {di_{\text{D}}}{dv_{\text{D}}}}={\frac {i_{\text{D}}\tau }{V_{\text{T}}}}\ .}
885:
4361:
1577:
Under forward bias, the half-occupancy lines for holes and electrons cannot remain flat throughout the device as they are when in equilibrium, but become
2626:
2047:
When the reverse bias becomes very large, reaching the breakdown voltage, the generation process in the depletion region accelerates leading to an
551:
3285:{\displaystyle I_{\text{S}}=\left(j\omega (C_{\text{J}}+C_{\text{D}})+{\frac {1}{r_{\text{D}}}}+{\frac {1}{R_{\text{S}}}}\right)V_{\text{O}}\ ,}
1643:
1564:, and this lifetime in turn limits how far they can diffuse from the majority carrier side into the minority carrier side, the so-called
2593:
with a dielectric spacer between the contacts. In reverse bias the width of the depletion layer is widened with increasing reverse bias
1158:
A forward bias separates the two bulk half-occupancy levels by the amount of the applied voltage, which lowers the separation of the
1870:
The reduced step in band edges also means that under forward bias the depletion region narrows as holes are pushed into it from the
2809:
1533:{\displaystyle p\,n=\left(p_{\text{B}}\,n_{\text{B}}\,e^{-\varphi _{\text{B}}/V_{\text{T}}}\right)e^{v_{\text{D}}/V_{\text{T}}}\ .}
1591:
bulk. The hole quasi-Fermi level does the reverse. The two quasi-Fermi levels do not coincide except deep in the bulk materials.
801:
3875:
1072:
In this band configuration no voltage is applied and no current flows through the diode. To force current through the diode a
337:{\displaystyle r_{\text{D}}=\left.{\frac {\Delta v_{\text{D}}}{\Delta i_{\text{D}}}}\right|_{v_{\text{D}}=V_{\text{bias}}}\ ,}
4334:
4277:
4250:
4137:
of the insulating region depleted of mobile carriers increases with increasing diode reverse bias, reducing the capacitance.
3713:{\displaystyle f_{\text{c}}={\frac {1}{2\pi (C_{\text{D}}+C_{\text{J}})(R_{\text{S}}{\mathit {\parallel }}r_{\text{D}})}}\ ,}
3065:
Generally speaking, for usual current levels in forward bias, this capacitance far exceeds the depletion-layer capacitance.
1772:
1552:
1269:
710:
2797:
In forward bias, besides the above depletion-layer capacitance, minority carrier charge injection and diffusion occurs. A
2581:
diode serves as an insulating region that separates the two diode contacts. Thus, the diode in reverse bias exhibits a
1984:
1169:
4296:
4220:
4190:
1558:, a defect that alternately traps holes and electrons, assisting recombination. The minority carriers have a limited
569:
514:
199:
The semiconductor diode is not ideal. As shown in the figure, the diode does not conduct appreciably until a nonzero
3829:
2487:{\displaystyle r_{\text{D}}={\frac {1}{di_{\text{D}}/dv_{\text{D}}}}\approx {\frac {nV_{\text{T}}}{i_{\text{D}}}},}
1867:
as majority carriers before injection. At this point the quasi-Fermi levels rejoin the bulk Fermi level positions.
1355:
1057:-type side due to donor dopant. Because of this charge there is an electric field in this region, as determined by
3789:
2326:
1887:
215:
1824:
1597:
4091:{\displaystyle f_{\text{c}}={\frac {1}{2\pi \,C_{\text{J}}(R_{\text{S}}{\mathit {\parallel }}r_{\text{D}})}}\ ,}
666:-type region of the same semiconductor are brought together and the two diode contacts are short-circuited, the
4382:
496:
492:
3096:
point (or Q-point) about which the signal is imagined to vary. The equivalent circuit for a diode driven by a
3088:
The diode is a highly non-linear device, but for small-signal variations its response can be analyzed using a
1551:
Recombination can occur by direct encounter with a majority carrier, annihilating both carriers, or through a
1040:
near the junction becomes depleted of both holes and electrons, forming an insulating region with almost no
3560:
2379:
This equation does not model the non-ideal behavior such as excess reverse leakage or breakdown phenomena.
4353:
1714:
404:
146:
layer to spread the voltage out over a larger distance and reduce the electric field. (Superscripts like
2040:
in this region. That very small current is the source of the leakage current under reverse bias. In the
434:
3726:
3155:
1322:
side (where they are majority carriers). On the other hand, near the interface, application of voltage
2746:
616:
4104:
17:
863:(room temperature), the thermal voltage is approximately 25 mV. Similarly, hole density on the
3973:
3759:
2590:
1954:
1741:
3938:
3580:
3352:
3325:
3298:
3130:
3103:
2865:
2596:
2531:
2504:
2295:
2238:
2207:
2178:
1325:
1212:
999:
972:
770:
377:
350:
4322:
2070:
2060:
485:
2162:{\displaystyle I_{\text{D}}=I_{\text{R}}\left(e^{\frac {V_{\text{D}}}{nV_{\text{T}}}}-1\right),}
4286:
4267:
1594:
The figure shows the majority carrier densities drop from the majority carrier density levels
1209:(The band bending diagram is made in units of volts, so no electron charge appears to convert
4238:
4180:
2799:
2726:
1058:
2913:, the time taken for the minority charge to transit the injection region, typically 0.1–100
1166:-type. As shown in the diagram, the step in band edges is reduced by the applied voltage to
875:-side. This reciprocal reduction in minority carrier density across the junction forces the
2892:
1935:
In reverse bias the occupancy level for holes again tends to stay at the level of the bulk
1571:
1088:
635:
612:
547:
2794:
the depletion width (thickness of the region where mobile carrier density is negligible).
1886:
voltage before that current level is reached (~0.7 V for silicon diodes, others listed at
233:
resistances are the reciprocal slopes of the current-voltage characteristic at a selected
170:
8:
3097:
3082:
103:
2777:
2706:
2267:
4205:
Naturally, this voltage depends upon the selected current level. This voltage for the
1939:-type semiconductor while the occupancy level for electrons follows that for the bulk
959:{\displaystyle p\,n=p_{\text{B}}\,n_{\text{B}}\,e^{-\varphi _{\text{B}}/V_{\text{T}}}}
607:
diode is considered. By "abrupt", it is meant that the p- and n-type doping exhibit a
4330:
4292:
4273:
4246:
4216:
4186:
2771:
2498:
1924:
1579:
1241:
1103:
190:; if connected in an alternating current circuit, the semiconductor diode acts as an
81:
2290:
introduced to model a slower rate of increase than predicted by the ideal diode law.
4151:
3573:
2693:{\displaystyle C_{\text{J}}=\kappa \varepsilon _{0}{\frac {A}{w(v_{\text{R}})}}\ ,}
1560:
1350:
1061:. The width of the depletion region adjusts so the negative acceptor charge on the
1036:
868:
705:
593:
583:
107:
64:
31:
4156:
1069:-side, so there is no electric field outside the depletion region on either side.
35:
4377:
3073:
2286:
1147:
carriers. The same descriptors apply to holes: they are majority carriers on the
110:. The diode conducts current in only one direction, and it is made by joining a
3756:
the gain rolls off with frequency as the capacitors short-circuit the resistor
1711:
smaller at the top of the barrier, which is reduced from the equilibrium value
1245:
flows (that is a current driven by a concentration gradient) of holes from the
3869:
the expressions found above for the diode resistance and capacitance provide:
161:
Mesa diode structure (top) and planar diode structure with guard-ring (bottom)
4371:
2372:
1349:
reduces the step in band edges and increases minority carrier densities by a
860:
608:
588:
89:
49:
1908:
1099:
1084:
620:
3384:
all at that Q-point. The output voltage provided by this circuit is then:
1115:
In forward bias, the positive terminal of the battery is connected to the
4349:
4146:
1899:
682:
667:
2497:
exhibiting a lower resistance the higher the current. Note: to refer to
2024:
and the depletion region widens as holes are pulled away from it on the
1548:
mechanisms that drive the excess concentrations toward the bulk values.
631:
222:
the current increases very rapidly with more negative reverse voltages.
4284:
4215:(4th ed.). Oxford University Press. p. 134 & Figure 3.8.
2914:
2041:
1903:
499: in this section. Unsourced material may be challenged and removed.
157:
693:-type side, forming a step (or barrier) in the band edges, labeled by
3349:
the diode junction capacitance (the depletion layer capacitance) and
1920:
1587:
bulk, to the half-occupancy equilibrium level for holes deep in the
1095:
diode in forward bias. Diffusion drives carriers across the junction.
192:
2235:, the current that flows when the diode is reverse biased (that is,
1704:{\displaystyle e^{-(\varphi _{\text{B}}-v_{\text{D}})/V_{\text{T}}}}
474:
2564:
2889:
is the charge associated with diffusion of minority carriers, and
1053:-type side due to acceptor dopant and as a positive charge on the
3093:
1888:
Diode § Forward threshold voltage for various semiconductors
597:
234:
216:
Diode § Forward threshold voltage for various semiconductors
2917:. On this basis, the diffusion capacitance is calculated to be:
401:
is the current change corresponding to the diode voltage change
214:
is reached, whose value depends on the semiconductor (listed in
3932:
which relates the corner frequency to the diode transit time.
689:-type side to move higher than the corresponding bands on the
642:
diode at zero applied voltage. The depletion region is shaded.
126:
The figure shows two of the many possible structures used for
2852:{\displaystyle i_{\text{D}}={\frac {Q_{\text{D}}}{\tau }}\ ,}
1162:-type bulk band edges to be closer in energy to those of the
1119:-type material and the negative terminal is connected to the
4358:
Creative
Commons Attribution-ShareAlike 3.0 Unported License
678:-side through the short circuit to adjust the occupancies.)
3786:
Assuming, as is the case when the diode is turned on, that
262:
1253:
side, and of electrons in the opposite direction from the
186:, and infinite resistance (conducts zero current) for the
2051:
condition which can cause runaway and destroy the diode.
1139:
carriers on that side, but electrons that make it to the
848:{\displaystyle V_{\text{T}}={\tfrac {k_{\text{B}}T}{q}}.}
4269:
Mosfet modeling for VLSI simulation: theory and practice
3922:{\displaystyle f_{\text{c}}={\frac {1}{2\pi n\tau }}\ ,}
1640:
in their respective bulk materials, to a level a factor
1065:-side exactly balances the positive donor charge on the
969:
at any position within the diode at equilibrium. Where
2331:
819:
763:-side, corresponding to the lower electron density in
4210:
4107:
4009:
3976:
3941:
3878:
3832:
3792:
3762:
3729:
3613:
3583:
3393:
3355:
3328:
3301:
3167:
3133:
3106:
2926:
2895:
2868:
2812:
2780:
2749:
2729:
2709:
2629:
2599:
2534:
2507:
2501:
or time-varying diode current and voltage, lowercase
2395:
2329:
2298:
2270:
2241:
2210:
2181:
2082:
1987:
1957:
1827:
1814:{\displaystyle e^{-\varphi _{\text{B}}/V_{\text{T}}}}
1775:
1744:
1717:
1646:
1600:
1414:
1405:
product is increased above the equilibrium value to:
1358:
1328:
1311:{\displaystyle e^{-\varphi _{\text{B}}/V_{\text{T}}}}
1272:
1266:-side (where they are minority carriers) is a factor
1215:
1172:
1002:
975:
888:
804:
773:
752:{\displaystyle e^{-\varphi _{\text{B}}/V_{\text{T}}}}
713:
437:
407:
380:
353:
246:
154:
refer to heavier or lighter impurity doping levels.)
2743:
the relative semiconductor dielectric permittivity,
4319:diode operated in reverse bias. See, for example,
4211:AS Sedra and KF Smith (1998). "Chapter 3: Diodes".
1123:-type material so that holes are injected into the
542:
may be too technical for most readers to understand
4236:
4129:
4090:
3992:
3954:
3921:
3861:
3818:
3778:
3748:
3712:
3596:
3544:
3368:
3341:
3314:
3284:
3146:
3119:
3081:diode driven by a current signal represented as a
3054:
2901:
2881:
2851:
2786:
2762:
2735:
2715:
2692:
2612:
2547:
2520:
2486:
2359:
2311:
2276:
2254:
2223:
2194:
2161:
2016:
1973:
1859:
1813:
1760:
1730:
1703:
1632:
1532:
1393:
1341:
1310:
1228:
1201:
1015:
988:
958:
847:
786:
751:
454:
423:
393:
366:
336:
142:guard-ring at the edge of the sharp corner of the
4209:diode is taken variously as 0.7 V and 0.5 V; see
2017:{\displaystyle \varphi _{\text{B}}+v_{\text{R}},}
1947:-type bulk band edges are raised relative to the
1202:{\displaystyle \varphi _{\text{B}}-v_{\text{D}}.}
138:layer. The bottom structure uses a lightly doped
4369:
4285:Jean-Pierre Colinge, Cynthia A. Colinge (2002).
1401:above the bulk values. Within the junction, the
4101:and varies with reverse bias because the width
1023:are the bulk majority carrier densities on the
700:. This step forces the electron density on the
592:An abrupt (i.e. behaving like a step function)
27:Semiconductor diode based upon the p–n junction
646:The figure shows a band bending diagram for a
4329:(2nd ed.). Technical Publications Pune.
3862:{\displaystyle R_{\text{S}}\gg r_{\text{D}},}
2065:The DC current-voltage behavior of the ideal
1394:{\displaystyle e^{v_{\text{D}}/V_{\text{T}}}}
4348:This article incorporates material from the
4265:
4178:
3819:{\displaystyle C_{\text{D}}\gg C_{\text{J}}}
2360:{\displaystyle {\tfrac {k_{\text{B}}T}{q}},}
182:The ideal diode has zero resistance for the
1860:{\displaystyle (n_{\text{B}},p_{\text{B}})}
1633:{\displaystyle (n_{\text{B}},p_{\text{B}})}
4323:"§5.8.1 Varactor diode: Working principle"
4230:
1034:As a result of this step in band edges, a
4320:
4174:
4172:
4035:
1451:
1440:
1418:
1151:-type side, and minority carriers on the
920:
909:
892:
570:Learn how and when to remove this message
554:, without removing the technical details.
515:Learn how and when to remove this message
448:
3072:
1919:
1907:
1738:by the amount of the forward diode bias
1106:and carrier densities in forward biased
1098:
1083:
630:
587:
169:
156:
4305:
4291:(2nd ed.). Springer. p. 149.
4239:"§2.1.1: Diodes: Operational principle"
4185:(2nd ed.). CRC Press. p. 78.
1544:number as they travel into the bulk by
14:
4370:
4169:
1127:-type material and electrons into the
165:
4199:
3935:For diodes operated in reverse bias,
3068:
2367:approximately equal to 25 mV at
1131:-type material. The electrons in the
552:make it understandable to non-experts
178:diode current-voltage characteristics
4259:
1076:must be applied, as described next.
879:-product of carrier densities to be
658:-type material (right side). When a
526:
497:adding citations to reliable sources
468:
4243:RF and Microwave Transmitter Design
3092:based upon a selected quiescent DC
2202:is the DC voltage across the diode.
1731:{\displaystyle \varphi _{\text{B}}}
654:-type material (left side) and the
424:{\displaystyle \Delta v_{\text{D}}}
24:
4245:. J Wiley & Sons. p. 59.
2585:, sometimes more vaguely called a
1821:smaller than their bulk densities
603:Here, the operation of the abrupt
455:{\displaystyle V_{\text{bias}}\,.}
408:
282:
267:
25:
4394:
4272:. World Scientific. p. 539.
3749:{\displaystyle f\gg f_{\text{c}}}
3322:the diode diffusion capacitance,
114:-type semiconducting layer to an
36:Diode § Semiconductor diodes
4288:Physics of semiconductor devices
2763:{\displaystyle \varepsilon _{0}}
2569:The depletion layer between the
2038:generation-recombination defects
531:
473:
88:
4356:", which is licensed under the
4327:Microwave and Radar Engineering
4130:{\displaystyle w(v_{\text{R}})}
4000:The cutoff frequency is then:
2382:Using this equation, the diode
1951:-type bulk by the reverse bias
1893:
1079:
484:needs additional citations for
4124:
4111:
4076:
4046:
3698:
3668:
3665:
3639:
3530:
3500:
3497:
3471:
3454:
3424:
3218:
3192:
2678:
2665:
2558:
1854:
1828:
1681:
1655:
1627:
1601:
13:
1:
3993:{\displaystyle v_{\text{R}}.}
3779:{\displaystyle r_{\text{D}}.}
1974:{\displaystyle v_{\text{R}},}
1874:-side and electrons from the
1761:{\displaystyle v_{\text{D}}.}
1044:charges. There are, however,
134:region next to the adjoining
4157:Diode § Semiconductor diodes
3955:{\displaystyle C_{\text{D}}}
3597:{\displaystyle f_{\text{c}}}
3369:{\displaystyle r_{\text{D}}}
3342:{\displaystyle C_{\text{J}}}
3315:{\displaystyle C_{\text{D}}}
3147:{\displaystyle R_{\text{S}}}
3120:{\displaystyle I_{\text{S}}}
2882:{\displaystyle Q_{\text{D}}}
2613:{\displaystyle v_{\text{R}}}
2548:{\displaystyle v_{\text{D}}}
2521:{\displaystyle i_{\text{D}}}
2312:{\displaystyle V_{\text{T}}}
2255:{\displaystyle V_{\text{D}}}
2224:{\displaystyle I_{\text{R}}}
2195:{\displaystyle V_{\text{D}}}
2054:
1342:{\displaystyle v_{\text{D}}}
1229:{\displaystyle v_{\text{D}}}
1016:{\displaystyle n_{\text{B}}}
989:{\displaystyle p_{\text{B}}}
787:{\displaystyle V_{\text{T}}}
626:
464:
394:{\displaystyle i_{\text{D}}}
367:{\displaystyle r_{\text{D}}}
225:As shown in the figure, the
121:
7:
4237:Andrei Grebennikov (2011).
4140:
2583:depletion-layer capacitance
2028:-side and electrons on the
10:
4399:
2562:
2233:reverse saturation current
2058:
1897:
1135:-type material are called
685:requires the bands on the
668:Fermi half-occupancy level
581:
29:
3565:transresistance amplifier
3077:Small-signal circuit for
2069:diode is governed by the
1943:-type. In this case, the
87:
80:
70:
55:
45:
4213:Microelectronic circuits
4162:
2591:parallel plate capacitor
1554:recombination-generation
674:-side and travel to the
188:reverse voltage polarity
3156:Kirchhoff's current law
2736:{\displaystyle \kappa }
2262:is large and negative).
2071:Shockley diode equation
2061:Shockley diode equation
72:Pin configuration
4131:
4092:
3994:
3956:
3923:
3863:
3820:
3780:
3750:
3714:
3598:
3546:
3370:
3343:
3316:
3286:
3148:
3121:
3085:
3056:
2903:
2883:
2853:
2788:
2764:
2737:
2717:
2694:
2614:
2549:
2522:
2488:
2361:
2313:
2278:
2256:
2225:
2196:
2163:
2018:
1975:
1932:
1917:
1861:
1815:
1762:
1732:
1705:
1634:
1534:
1395:
1343:
1312:
1239:Under forward bias, a
1230:
1203:
1143:-type side are called
1112:
1096:
1017:
990:
960:
849:
788:
753:
643:
600:
456:
425:
395:
374:is the resistance and
368:
338:
179:
162:
4383:Semiconductor devices
4266:Narain Arora (2007).
4182:Semiconductor Devices
4179:John Sparkes (1994).
4132:
4093:
3995:
3966:often is replaced by
3962:is zero and the term
3957:
3924:
3864:
3821:
3781:
3751:
3715:
3599:
3547:
3371:
3344:
3317:
3287:
3149:
3122:
3076:
3057:
2904:
2902:{\displaystyle \tau }
2884:
2854:
2800:diffusion capacitance
2789:
2765:
2738:
2718:
2695:
2615:
2550:
2523:
2489:
2362:
2314:
2279:
2257:
2226:
2197:
2164:
2019:
1976:
1923:
1916:diode in reverse bias
1911:
1862:
1816:
1763:
1733:
1706:
1635:
1535:
1396:
1344:
1313:
1231:
1204:
1102:
1087:
1031:-side, respectively.
1018:
991:
961:
850:
789:
754:
634:
613:band-bending diagrams
596:diode made by doping
591:
457:
426:
396:
369:
339:
184:forward bias polarity
173:
160:
4105:
4007:
3974:
3939:
3876:
3830:
3790:
3760:
3727:
3723:and for frequencies
3611:
3581:
3391:
3353:
3326:
3299:
3165:
3158:at the output node:
3131:
3104:
3090:small-signal circuit
2924:
2893:
2866:
2810:
2778:
2747:
2727:
2707:
2627:
2597:
2587:junction capacitance
2532:
2505:
2393:
2327:
2296:
2268:
2239:
2208:
2179:
2080:
1985:
1955:
1825:
1773:
1742:
1715:
1644:
1598:
1572:light-emitting diode
1412:
1356:
1326:
1270:
1213:
1170:
1089:Band-bending diagram
1000:
973:
886:
871:smaller than on the
802:
771:
767:-region. The symbol
759:smaller than on the
711:
636:Band-bending diagram
493:improve this article
435:
405:
378:
351:
244:
193:electrical rectifier
76:A: Anode, K: Cathode
4354:Semiconductor diode
3561:parallel resistance
166:Electrical behavior
104:semiconductor diode
42:
4360:but not under the
4321:V.S.Bagad (2009).
4127:
4088:
3990:
3952:
3919:
3859:
3816:
3776:
3746:
3710:
3594:
3542:
3366:
3339:
3312:
3282:
3144:
3117:
3086:
3069:Transient response
3052:
2899:
2879:
2849:
2784:
2760:
2733:
2713:
2690:
2610:
2545:
2518:
2484:
2357:
2352:
2309:
2274:
2252:
2221:
2192:
2159:
2014:
1971:
1933:
1927:in reverse-biased
1925:Quasi-Fermi levels
1918:
1857:
1811:
1758:
1728:
1701:
1630:
1580:quasi-Fermi levels
1530:
1391:
1339:
1318:lower than on the
1308:
1226:
1199:
1113:
1104:Quasi-Fermi levels
1097:
1059:Poisson's equation
1013:
986:
956:
845:
840:
784:
749:
644:
601:
452:
421:
391:
364:
334:
212:threshold voltage)
180:
163:
40:
4336:978-81-8431-121-1
4279:978-981-256-862-5
4252:978-0-470-52099-4
4121:
4084:
4080:
4073:
4056:
4043:
4017:
3984:
3949:
3915:
3911:
3886:
3853:
3840:
3813:
3800:
3770:
3743:
3706:
3702:
3695:
3678:
3662:
3649:
3621:
3591:
3538:
3534:
3527:
3510:
3494:
3481:
3451:
3434:
3416:
3413:
3403:
3363:
3336:
3309:
3278:
3273:
3259:
3256:
3239:
3236:
3215:
3202:
3175:
3141:
3114:
3048:
3044:
3041:
3027:
3012:
3008:
2993:
2972:
2968:
2953:
2934:
2876:
2845:
2841:
2835:
2820:
2787:{\displaystyle w}
2772:electric constant
2723:the device area,
2716:{\displaystyle A}
2686:
2682:
2675:
2637:
2607:
2589:, analogous to a
2542:
2515:
2479:
2476:
2465:
2447:
2443:
2425:
2403:
2351:
2341:
2306:
2277:{\displaystyle n}
2249:
2218:
2189:
2142:
2138:
2124:
2103:
2090:
2008:
1995:
1965:
1912:Band-bending for
1851:
1838:
1806:
1791:
1752:
1725:
1696:
1678:
1665:
1624:
1611:
1526:
1519:
1504:
1482:
1467:
1448:
1437:
1386:
1371:
1336:
1303:
1288:
1242:diffusion current
1223:
1193:
1180:
1010:
983:
951:
936:
917:
906:
859: = 290
839:
829:
812:
781:
744:
729:
580:
579:
572:
525:
524:
517:
445:
418:
388:
361:
330:
323:
310:
296:
292:
277:
254:
220:breakdown voltage
96:
95:
82:Electronic symbol
57:Working principle
16:(Redirected from
4390:
4341:
4340:
4309:
4303:
4302:
4283:
4263:
4257:
4256:
4234:
4228:
4226:
4203:
4197:
4196:
4176:
4136:
4134:
4133:
4128:
4123:
4122:
4119:
4097:
4095:
4094:
4089:
4082:
4081:
4079:
4075:
4074:
4071:
4065:
4064:
4058:
4057:
4054:
4045:
4044:
4041:
4024:
4019:
4018:
4015:
3999:
3997:
3996:
3991:
3986:
3985:
3982:
3968:cutoff frequency
3964:corner frequency
3961:
3959:
3958:
3953:
3951:
3950:
3947:
3928:
3926:
3925:
3920:
3913:
3912:
3910:
3893:
3888:
3887:
3884:
3868:
3866:
3865:
3860:
3855:
3854:
3851:
3842:
3841:
3838:
3825:
3823:
3822:
3817:
3815:
3814:
3811:
3802:
3801:
3798:
3785:
3783:
3782:
3777:
3772:
3771:
3768:
3755:
3753:
3752:
3747:
3745:
3744:
3741:
3719:
3717:
3716:
3711:
3704:
3703:
3701:
3697:
3696:
3693:
3687:
3686:
3680:
3679:
3676:
3664:
3663:
3660:
3651:
3650:
3647:
3628:
3623:
3622:
3619:
3603:
3601:
3600:
3595:
3593:
3592:
3589:
3574:cutoff frequency
3569:corner frequency
3551:
3549:
3548:
3543:
3536:
3535:
3533:
3529:
3528:
3525:
3519:
3518:
3512:
3511:
3508:
3496:
3495:
3492:
3483:
3482:
3479:
3457:
3453:
3452:
3449:
3443:
3442:
3436:
3435:
3432:
3422:
3417:
3415:
3414:
3411:
3405:
3404:
3401:
3395:
3375:
3373:
3372:
3367:
3365:
3364:
3361:
3348:
3346:
3345:
3340:
3338:
3337:
3334:
3321:
3319:
3318:
3313:
3311:
3310:
3307:
3291:
3289:
3288:
3283:
3276:
3275:
3274:
3271:
3265:
3261:
3260:
3258:
3257:
3254:
3245:
3240:
3238:
3237:
3234:
3225:
3217:
3216:
3213:
3204:
3203:
3200:
3177:
3176:
3173:
3154:is shown. Using
3153:
3151:
3150:
3145:
3143:
3142:
3139:
3126:
3124:
3123:
3118:
3116:
3115:
3112:
3061:
3059:
3058:
3053:
3046:
3045:
3043:
3042:
3039:
3033:
3029:
3028:
3025:
3018:
3013:
3011:
3010:
3009:
3006:
2996:
2995:
2994:
2991:
2981:
2973:
2971:
2970:
2969:
2966:
2956:
2955:
2954:
2951:
2941:
2936:
2935:
2932:
2908:
2906:
2905:
2900:
2888:
2886:
2885:
2880:
2878:
2877:
2874:
2858:
2856:
2855:
2850:
2843:
2842:
2837:
2836:
2833:
2827:
2822:
2821:
2818:
2793:
2791:
2790:
2785:
2769:
2767:
2766:
2761:
2759:
2758:
2742:
2740:
2739:
2734:
2722:
2720:
2719:
2714:
2699:
2697:
2696:
2691:
2684:
2683:
2681:
2677:
2676:
2673:
2657:
2655:
2654:
2639:
2638:
2635:
2619:
2617:
2616:
2611:
2609:
2608:
2605:
2554:
2552:
2551:
2546:
2544:
2543:
2540:
2527:
2525:
2524:
2519:
2517:
2516:
2513:
2493:
2491:
2490:
2485:
2480:
2478:
2477:
2474:
2468:
2467:
2466:
2463:
2453:
2448:
2446:
2445:
2444:
2441:
2432:
2427:
2426:
2423:
2410:
2405:
2404:
2401:
2366:
2364:
2363:
2358:
2353:
2347:
2343:
2342:
2339:
2332:
2318:
2316:
2315:
2310:
2308:
2307:
2304:
2283:
2281:
2280:
2275:
2261:
2259:
2258:
2253:
2251:
2250:
2247:
2230:
2228:
2227:
2222:
2220:
2219:
2216:
2201:
2199:
2198:
2193:
2191:
2190:
2187:
2168:
2166:
2165:
2160:
2155:
2151:
2144:
2143:
2141:
2140:
2139:
2136:
2126:
2125:
2122:
2116:
2105:
2104:
2101:
2092:
2091:
2088:
2023:
2021:
2020:
2015:
2010:
2009:
2006:
1997:
1996:
1993:
1980:
1978:
1977:
1972:
1967:
1966:
1963:
1866:
1864:
1863:
1858:
1853:
1852:
1849:
1840:
1839:
1836:
1820:
1818:
1817:
1812:
1810:
1809:
1808:
1807:
1804:
1798:
1793:
1792:
1789:
1767:
1765:
1764:
1759:
1754:
1753:
1750:
1737:
1735:
1734:
1729:
1727:
1726:
1723:
1710:
1708:
1707:
1702:
1700:
1699:
1698:
1697:
1694:
1688:
1680:
1679:
1676:
1667:
1666:
1663:
1639:
1637:
1636:
1631:
1626:
1625:
1622:
1613:
1612:
1609:
1567:diffusion length
1539:
1537:
1536:
1531:
1524:
1523:
1522:
1521:
1520:
1517:
1511:
1506:
1505:
1502:
1491:
1487:
1486:
1485:
1484:
1483:
1480:
1474:
1469:
1468:
1465:
1450:
1449:
1446:
1439:
1438:
1435:
1400:
1398:
1397:
1392:
1390:
1389:
1388:
1387:
1384:
1378:
1373:
1372:
1369:
1351:Boltzmann factor
1348:
1346:
1345:
1340:
1338:
1337:
1334:
1317:
1315:
1314:
1309:
1307:
1306:
1305:
1304:
1301:
1295:
1290:
1289:
1286:
1235:
1233:
1232:
1227:
1225:
1224:
1221:
1208:
1206:
1205:
1200:
1195:
1194:
1191:
1182:
1181:
1178:
1037:depletion region
1022:
1020:
1019:
1014:
1012:
1011:
1008:
995:
993:
992:
987:
985:
984:
981:
965:
963:
962:
957:
955:
954:
953:
952:
949:
943:
938:
937:
934:
919:
918:
915:
908:
907:
904:
869:Boltzmann factor
854:
852:
851:
846:
841:
835:
831:
830:
827:
820:
814:
813:
810:
793:
791:
790:
785:
783:
782:
779:
758:
756:
755:
750:
748:
747:
746:
745:
742:
736:
731:
730:
727:
706:Boltzmann factor
681:However, a flat
575:
568:
564:
561:
555:
535:
534:
527:
520:
513:
509:
506:
500:
477:
469:
461:
459:
458:
453:
447:
446:
443:
430:
428:
427:
422:
420:
419:
416:
400:
398:
397:
392:
390:
389:
386:
373:
371:
370:
365:
363:
362:
359:
343:
341:
340:
335:
328:
327:
326:
325:
324:
321:
312:
311:
308:
301:
297:
295:
294:
293:
290:
280:
279:
278:
275:
265:
256:
255:
252:
201:knee voltage (or
92:
73:
61:
60:
43:
39:
21:
4398:
4397:
4393:
4392:
4391:
4389:
4388:
4387:
4368:
4367:
4345:
4344:
4337:
4310:
4306:
4299:
4280:
4264:
4260:
4253:
4235:
4231:
4223:
4204:
4200:
4193:
4177:
4170:
4165:
4143:
4118:
4114:
4106:
4103:
4102:
4070:
4066:
4060:
4059:
4053:
4049:
4040:
4036:
4028:
4023:
4014:
4010:
4008:
4005:
4004:
3981:
3977:
3975:
3972:
3971:
3946:
3942:
3940:
3937:
3936:
3897:
3892:
3883:
3879:
3877:
3874:
3873:
3850:
3846:
3837:
3833:
3831:
3828:
3827:
3810:
3806:
3797:
3793:
3791:
3788:
3787:
3767:
3763:
3761:
3758:
3757:
3740:
3736:
3728:
3725:
3724:
3692:
3688:
3682:
3681:
3675:
3671:
3659:
3655:
3646:
3642:
3632:
3627:
3618:
3614:
3612:
3609:
3608:
3588:
3584:
3582:
3579:
3578:
3524:
3520:
3514:
3513:
3507:
3503:
3491:
3487:
3478:
3474:
3458:
3448:
3444:
3438:
3437:
3431:
3427:
3423:
3421:
3410:
3406:
3400:
3396:
3394:
3392:
3389:
3388:
3382:off resistance,
3360:
3356:
3354:
3351:
3350:
3333:
3329:
3327:
3324:
3323:
3306:
3302:
3300:
3297:
3296:
3270:
3266:
3253:
3249:
3244:
3233:
3229:
3224:
3212:
3208:
3199:
3195:
3185:
3181:
3172:
3168:
3166:
3163:
3162:
3138:
3134:
3132:
3129:
3128:
3127:and resistance
3111:
3107:
3105:
3102:
3101:
3071:
3038:
3034:
3024:
3020:
3019:
3017:
3005:
3001:
2997:
2990:
2986:
2982:
2980:
2965:
2961:
2957:
2950:
2946:
2942:
2940:
2931:
2927:
2925:
2922:
2921:
2894:
2891:
2890:
2873:
2869:
2867:
2864:
2863:
2832:
2828:
2826:
2817:
2813:
2811:
2808:
2807:
2779:
2776:
2775:
2754:
2750:
2748:
2745:
2744:
2728:
2725:
2724:
2708:
2705:
2704:
2672:
2668:
2661:
2656:
2650:
2646:
2634:
2630:
2628:
2625:
2624:
2604:
2600:
2598:
2595:
2594:
2567:
2561:
2539:
2535:
2533:
2530:
2529:
2512:
2508:
2506:
2503:
2502:
2473:
2469:
2462:
2458:
2454:
2452:
2440:
2436:
2428:
2422:
2418:
2414:
2409:
2400:
2396:
2394:
2391:
2390:
2338:
2334:
2333:
2330:
2328:
2325:
2324:
2321:thermal voltage
2303:
2299:
2297:
2294:
2293:
2287:ideality factor
2269:
2266:
2265:
2246:
2242:
2240:
2237:
2236:
2215:
2211:
2209:
2206:
2205:
2186:
2182:
2180:
2177:
2176:
2135:
2131:
2127:
2121:
2117:
2115:
2111:
2110:
2106:
2100:
2096:
2087:
2083:
2081:
2078:
2077:
2063:
2057:
2005:
2001:
1992:
1988:
1986:
1983:
1982:
1962:
1958:
1956:
1953:
1952:
1906:
1896:
1848:
1844:
1835:
1831:
1826:
1823:
1822:
1803:
1799:
1794:
1788:
1784:
1780:
1776:
1774:
1771:
1770:
1749:
1745:
1743:
1740:
1739:
1722:
1718:
1716:
1713:
1712:
1693:
1689:
1684:
1675:
1671:
1662:
1658:
1651:
1647:
1645:
1642:
1641:
1621:
1617:
1608:
1604:
1599:
1596:
1595:
1516:
1512:
1507:
1501:
1497:
1496:
1492:
1479:
1475:
1470:
1464:
1460:
1456:
1452:
1445:
1441:
1434:
1430:
1429:
1425:
1413:
1410:
1409:
1383:
1379:
1374:
1368:
1364:
1363:
1359:
1357:
1354:
1353:
1333:
1329:
1327:
1324:
1323:
1300:
1296:
1291:
1285:
1281:
1277:
1273:
1271:
1268:
1267:
1249:-side into the
1220:
1216:
1214:
1211:
1210:
1190:
1186:
1177:
1173:
1171:
1168:
1167:
1082:
1046:fixed, immobile
1007:
1003:
1001:
998:
997:
980:
976:
974:
971:
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948:
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933:
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921:
914:
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903:
899:
887:
884:
883:
826:
822:
821:
818:
809:
805:
803:
800:
799:
796:thermal voltage
778:
774:
772:
769:
768:
741:
737:
732:
726:
722:
718:
714:
712:
709:
708:
699:
629:
586:
576:
565:
559:
556:
548:help improve it
545:
536:
532:
521:
510:
504:
501:
490:
478:
467:
442:
438:
436:
433:
432:
415:
411:
406:
403:
402:
385:
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358:
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320:
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302:
289:
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281:
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241:
168:
124:
106:based upon the
71:
58:
56:
38:
28:
23:
22:
15:
12:
11:
5:
4396:
4386:
4385:
4380:
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4087:
4078:
4069:
4063:
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4048:
4039:
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4013:
3989:
3980:
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3918:
3909:
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3900:
3896:
3891:
3882:
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3709:
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3645:
3641:
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3506:
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3477:
3473:
3470:
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3464:
3461:
3456:
3447:
3441:
3430:
3426:
3420:
3409:
3399:
3359:
3332:
3305:
3293:
3292:
3281:
3269:
3264:
3252:
3248:
3243:
3232:
3228:
3223:
3220:
3211:
3207:
3198:
3194:
3191:
3188:
3184:
3180:
3171:
3137:
3110:
3070:
3067:
3063:
3062:
3051:
3037:
3032:
3023:
3016:
3004:
3000:
2989:
2985:
2979:
2976:
2964:
2960:
2949:
2945:
2939:
2930:
2898:
2872:
2860:
2859:
2848:
2840:
2831:
2825:
2816:
2783:
2757:
2753:
2732:
2712:
2701:
2700:
2689:
2680:
2671:
2667:
2664:
2660:
2653:
2649:
2645:
2642:
2633:
2603:
2560:
2557:
2538:
2511:
2495:
2494:
2483:
2472:
2461:
2457:
2451:
2439:
2435:
2431:
2421:
2417:
2413:
2408:
2399:
2377:
2376:
2356:
2350:
2346:
2337:
2302:
2291:
2273:
2263:
2245:
2214:
2203:
2185:
2170:
2169:
2158:
2154:
2150:
2147:
2134:
2130:
2120:
2114:
2109:
2099:
2095:
2086:
2059:Main article:
2056:
2053:
2013:
2004:
2000:
1991:
1970:
1961:
1895:
1892:
1881:In the simple
1856:
1847:
1843:
1834:
1830:
1802:
1797:
1787:
1783:
1779:
1757:
1748:
1721:
1692:
1687:
1683:
1674:
1670:
1661:
1657:
1654:
1650:
1629:
1620:
1616:
1607:
1603:
1541:
1540:
1529:
1515:
1510:
1500:
1495:
1490:
1478:
1473:
1463:
1459:
1455:
1444:
1433:
1428:
1424:
1421:
1417:
1382:
1377:
1367:
1362:
1332:
1299:
1294:
1284:
1280:
1276:
1219:
1198:
1189:
1185:
1176:
1081:
1078:
1027:-side and the
1006:
979:
967:
966:
947:
942:
932:
928:
924:
913:
902:
898:
895:
891:
844:
838:
834:
825:
817:
808:
777:
740:
735:
725:
721:
717:
704:-side to be a
697:
628:
625:
582:Main article:
578:
577:
539:
537:
530:
523:
522:
481:
479:
472:
466:
463:
451:
441:
414:
410:
384:
357:
345:
344:
333:
319:
315:
306:
300:
288:
284:
273:
269:
263:
259:
250:
167:
164:
123:
120:
94:
93:
85:
84:
78:
77:
74:
68:
67:
62:
53:
52:
47:
26:
9:
6:
4:
3:
2:
4395:
4384:
4381:
4379:
4376:
4375:
4373:
4366:
4365:
4363:
4359:
4355:
4351:
4338:
4332:
4328:
4324:
4318:
4314:
4308:
4300:
4298:1-4020-7018-7
4294:
4290:
4289:
4281:
4275:
4271:
4270:
4262:
4254:
4248:
4244:
4240:
4233:
4224:
4222:0-19-511663-1
4218:
4214:
4208:
4202:
4194:
4192:0-7487-7382-7
4188:
4184:
4183:
4175:
4173:
4168:
4158:
4155:
4153:
4150:
4148:
4145:
4144:
4138:
4115:
4108:
4085:
4067:
4061:
4050:
4037:
4032:
4029:
4025:
4020:
4011:
4003:
4002:
4001:
3987:
3978:
3969:
3965:
3943:
3933:
3916:
3907:
3904:
3901:
3898:
3894:
3889:
3880:
3872:
3871:
3870:
3856:
3847:
3843:
3834:
3807:
3803:
3794:
3773:
3764:
3737:
3733:
3730:
3707:
3689:
3683:
3672:
3656:
3652:
3643:
3636:
3633:
3629:
3624:
3615:
3607:
3606:
3605:
3585:
3576:
3575:
3570:
3566:
3562:
3558:
3539:
3521:
3515:
3504:
3488:
3484:
3475:
3468:
3465:
3462:
3459:
3445:
3439:
3428:
3418:
3407:
3397:
3387:
3386:
3385:
3383:
3379:
3357:
3330:
3303:
3279:
3267:
3262:
3250:
3246:
3241:
3230:
3226:
3221:
3209:
3205:
3196:
3189:
3186:
3182:
3178:
3169:
3161:
3160:
3159:
3157:
3135:
3108:
3100:with current
3099:
3098:Norton source
3095:
3091:
3084:
3083:Norton source
3080:
3075:
3066:
3049:
3035:
3030:
3021:
3014:
3002:
2998:
2987:
2983:
2977:
2974:
2962:
2958:
2947:
2943:
2937:
2928:
2920:
2919:
2918:
2916:
2912:
2896:
2870:
2846:
2838:
2829:
2823:
2814:
2806:
2805:
2804:
2802:
2801:
2795:
2781:
2773:
2755:
2751:
2730:
2710:
2687:
2669:
2662:
2658:
2651:
2647:
2643:
2640:
2631:
2623:
2622:
2621:
2601:
2592:
2588:
2584:
2580:
2576:
2572:
2566:
2556:
2536:
2509:
2500:
2481:
2470:
2459:
2455:
2449:
2437:
2433:
2429:
2419:
2415:
2411:
2406:
2397:
2389:
2388:
2387:
2385:
2384:on resistance
2380:
2374:
2370:
2354:
2348:
2344:
2335:
2322:
2300:
2292:
2289:
2288:
2271:
2264:
2243:
2234:
2212:
2204:
2183:
2175:
2174:
2173:
2156:
2152:
2148:
2145:
2132:
2128:
2118:
2112:
2107:
2097:
2093:
2084:
2076:
2075:
2074:
2072:
2068:
2062:
2052:
2050:
2045:
2043:
2039:
2033:
2031:
2027:
2011:
2002:
1998:
1989:
1968:
1959:
1950:
1946:
1942:
1938:
1930:
1926:
1922:
1915:
1910:
1905:
1901:
1891:
1889:
1884:
1879:
1877:
1873:
1868:
1845:
1841:
1832:
1800:
1795:
1785:
1781:
1777:
1755:
1746:
1719:
1690:
1685:
1672:
1668:
1659:
1652:
1648:
1618:
1614:
1605:
1592:
1590:
1586:
1582:
1581:
1575:
1573:
1569:
1568:
1563:
1562:
1557:
1555:
1549:
1547:
1546:recombination
1527:
1513:
1508:
1498:
1493:
1488:
1476:
1471:
1461:
1457:
1453:
1442:
1431:
1426:
1422:
1419:
1415:
1408:
1407:
1406:
1404:
1380:
1375:
1365:
1360:
1352:
1330:
1321:
1297:
1292:
1282:
1278:
1274:
1265:
1260:
1257:-side to the
1256:
1252:
1248:
1244:
1243:
1237:
1217:
1196:
1187:
1183:
1174:
1165:
1161:
1156:
1154:
1150:
1146:
1142:
1138:
1134:
1130:
1126:
1122:
1118:
1109:
1105:
1101:
1094:
1090:
1086:
1077:
1075:
1070:
1068:
1064:
1060:
1056:
1052:
1047:
1043:
1039:
1038:
1032:
1030:
1026:
1004:
977:
945:
940:
930:
926:
922:
911:
900:
896:
893:
889:
882:
881:
880:
878:
874:
870:
866:
862:
858:
842:
836:
832:
823:
815:
806:
798:, defined as
797:
775:
766:
762:
738:
733:
723:
719:
715:
707:
703:
696:
692:
688:
684:
679:
677:
673:
669:
665:
662:-type and an
661:
657:
653:
649:
641:
637:
633:
624:
622:
618:
617:Semiconductor
614:
610:
609:step function
606:
599:
595:
590:
585:
574:
571:
563:
553:
549:
543:
540:This section
538:
529:
528:
519:
516:
508:
498:
494:
488:
487:
482:This section
480:
476:
471:
470:
462:
449:
439:
412:
382:
355:
331:
317:
313:
304:
298:
286:
271:
257:
248:
240:
239:
238:
236:
232:
228:
223:
221:
217:
213:
209:
205:
202:
197:
195:
194:
189:
185:
177:
172:
159:
155:
153:
149:
145:
141:
137:
133:
129:
119:
117:
113:
109:
105:
102:is a type of
101:
91:
86:
83:
79:
75:
69:
66:
63:
54:
51:
50:Semiconductor
48:
44:
37:
33:
19:
4347:
4346:
4326:
4316:
4312:
4307:
4287:
4268:
4261:
4242:
4232:
4212:
4206:
4201:
4181:
4152:p–n junction
4100:
3967:
3963:
3934:
3931:
3722:
3572:
3568:
3564:
3556:
3554:
3381:
3377:
3294:
3089:
3087:
3078:
3064:
2911:transit time
2910:
2861:
2798:
2796:
2702:
2586:
2582:
2578:
2574:
2570:
2568:
2499:differential
2496:
2383:
2381:
2378:
2371: = 290
2368:
2320:
2285:
2232:
2171:
2066:
2064:
2048:
2046:
2037:
2034:
2029:
2025:
1948:
1944:
1940:
1936:
1934:
1928:
1913:
1894:Reverse bias
1882:
1880:
1875:
1871:
1869:
1593:
1588:
1584:
1578:
1576:
1565:
1559:
1553:
1550:
1545:
1542:
1402:
1319:
1263:
1258:
1254:
1250:
1246:
1240:
1238:
1236:to energy.)
1163:
1159:
1157:
1155:-type side.
1152:
1148:
1144:
1140:
1136:
1132:
1128:
1124:
1120:
1116:
1114:
1107:
1092:
1080:Forward bias
1074:forward bias
1073:
1071:
1066:
1062:
1054:
1050:
1045:
1041:
1035:
1033:
1028:
1024:
968:
876:
872:
864:
856:
795:
794:denotes the
764:
760:
701:
694:
690:
686:
680:
675:
671:
663:
659:
655:
651:
647:
645:
639:
621:Band diagram
604:
602:
584:p–n junction
566:
557:
541:
511:
502:
491:Please help
486:verification
483:
431:at the bias
346:
230:
226:
224:
219:
211:
207:
203:
200:
198:
191:
187:
183:
181:
175:
151:
147:
143:
139:
135:
131:
127:
125:
115:
111:
108:p–n junction
99:
97:
65:p–n junction
32:p–n junction
4350:Citizendium
4147:p-i-n diode
3567:exhibits a
2577:sides of a
2559:Capacitance
1900:Zener diode
867:-side is a
683:Fermi level
4372:Categories
3559:indicates
3376:the diode
2563:See also:
2555:are used.
2042:photodiode
1904:Photodiode
1898:See also:
30:See also:
4352:article "
4062:∥
4033:π
3908:τ
3902:π
3844:≫
3804:≫
3734:≫
3684:∥
3637:π
3516:∥
3469:ω
3440:∥
3190:ω
3031:τ
2978:τ
2897:τ
2839:τ
2752:ε
2731:κ
2648:ε
2644:κ
2450:≈
2146:−
2055:Diode law
2049:avalanche
1990:φ
1786:φ
1782:−
1720:φ
1669:−
1660:φ
1653:−
1570:. In the
1462:φ
1458:−
1283:φ
1279:−
1184:−
1175:φ
931:φ
927:−
724:φ
720:−
627:Zero bias
560:June 2022
465:Operation
409:Δ
283:Δ
268:Δ
174:Nonideal
122:Structure
100:p–n diode
41:P–N diode
18:P-n diode
4313:varactor
4141:See also
3577:denoted
2565:Varactor
1561:lifetime
1145:minority
1137:majority
505:May 2022
3563:. This
2909:is the
2373:kelvins
2319:is the
2231:is the
2032:-side.
1878:-side.
861:kelvins
598:silicon
546:Please
237:point:
204:turn-on
59:
4378:Diodes
4333:
4295:
4276:
4249:
4219:
4189:
4083:
3914:
3705:
3555:where
3537:
3277:
3047:
2862:where
2844:
2774:, and
2685:
2284:is an
2172:where
1556:center
1525:
1042:mobile
347:where
329:
208:cut-in
4315:is a
4163:Notes
3295:with
2703:with
1931:diode
1111:role.
210:, or
4362:GFDL
4331:ISBN
4311:The
4293:ISBN
4274:ISBN
4247:ISBN
4217:ISBN
4187:ISBN
3826:and
3094:bias
2770:the
2573:and
2528:and
1902:and
1108:p–n-
1091:for
996:and
638:for
619:and
444:bias
322:bias
235:bias
46:Type
34:and
4317:p–n
4207:p–n
3571:or
3380:or
3079:p–n
2579:p–n
2386:is
2323:of
2067:p–n
1929:p–n
1914:p–n
1883:p–n
1403:pn-
1093:p–n
855:At
648:p–n
640:p–n
605:p–n
594:p–n
550:to
495:by
231:off
229:or
176:p–n
150:or
128:p–n
4374::
4325:.
4241:.
4171:^
3604::
3557:||
3378:on
2915:ns
2073::
1589:p-
1585:n-
1320:n-
1259:p-
1251:n-
877:pn
623:.
227:on
206:,
196:.
144:p-
140:p-
136:n-
132:p-
98:A
4364:.
4339:.
4301:.
4282:.
4255:.
4227:.
4225:.
4195:.
4125:)
4120:R
4116:v
4112:(
4109:w
4086:,
4077:)
4072:D
4068:r
4055:S
4051:R
4047:(
4042:J
4038:C
4030:2
4026:1
4021:=
4016:c
4012:f
3988:.
3983:R
3979:v
3948:D
3944:C
3917:,
3905:n
3899:2
3895:1
3890:=
3885:c
3881:f
3857:,
3852:D
3848:r
3839:S
3835:R
3812:J
3808:C
3799:D
3795:C
3774:.
3769:D
3765:r
3742:c
3738:f
3731:f
3708:,
3699:)
3694:D
3690:r
3677:S
3673:R
3669:(
3666:)
3661:J
3657:C
3653:+
3648:D
3644:C
3640:(
3634:2
3630:1
3625:=
3620:c
3616:f
3590:c
3586:f
3540:,
3531:)
3526:D
3522:r
3509:S
3505:R
3501:(
3498:)
3493:J
3489:C
3485:+
3480:D
3476:C
3472:(
3466:j
3463:+
3460:1
3455:)
3450:D
3446:r
3433:S
3429:R
3425:(
3419:=
3412:S
3408:I
3402:O
3398:V
3362:D
3358:r
3335:J
3331:C
3308:D
3304:C
3280:,
3272:O
3268:V
3263:)
3255:S
3251:R
3247:1
3242:+
3235:D
3231:r
3227:1
3222:+
3219:)
3214:D
3210:C
3206:+
3201:J
3197:C
3193:(
3187:j
3183:(
3179:=
3174:S
3170:I
3140:S
3136:R
3113:S
3109:I
3050:.
3040:T
3036:V
3026:D
3022:i
3015:=
3007:D
3003:v
2999:d
2992:D
2988:i
2984:d
2975:=
2967:D
2963:v
2959:d
2952:D
2948:Q
2944:d
2938:=
2933:D
2929:C
2875:D
2871:Q
2847:,
2834:D
2830:Q
2824:=
2819:D
2815:i
2782:w
2756:0
2711:A
2688:,
2679:)
2674:R
2670:v
2666:(
2663:w
2659:A
2652:0
2641:=
2636:J
2632:C
2606:R
2602:v
2575:p
2571:n
2541:D
2537:v
2514:D
2510:i
2482:,
2475:D
2471:i
2464:T
2460:V
2456:n
2442:D
2438:v
2434:d
2430:/
2424:D
2420:i
2416:d
2412:1
2407:=
2402:D
2398:r
2375:.
2369:T
2355:,
2349:q
2345:T
2340:B
2336:k
2305:T
2301:V
2272:n
2248:D
2244:V
2217:R
2213:I
2188:D
2184:V
2157:,
2153:)
2149:1
2137:T
2133:V
2129:n
2123:D
2119:V
2113:e
2108:(
2102:R
2098:I
2094:=
2089:D
2085:I
2030:n
2026:p
2012:,
2007:R
2003:v
1999:+
1994:B
1969:,
1964:R
1960:v
1949:n
1945:p
1941:n
1937:p
1876:n
1872:p
1855:)
1850:B
1846:p
1842:,
1837:B
1833:n
1829:(
1805:T
1801:V
1796:/
1790:B
1778:e
1756:.
1751:D
1747:v
1724:B
1695:T
1691:V
1686:/
1682:)
1677:D
1673:v
1664:B
1656:(
1649:e
1628:)
1623:B
1619:p
1615:,
1610:B
1606:n
1602:(
1528:.
1518:T
1514:V
1509:/
1503:D
1499:v
1494:e
1489:)
1481:T
1477:V
1472:/
1466:B
1454:e
1447:B
1443:n
1436:B
1432:p
1427:(
1423:=
1420:n
1416:p
1385:T
1381:V
1376:/
1370:D
1366:v
1361:e
1335:D
1331:v
1302:T
1298:V
1293:/
1287:B
1275:e
1264:p
1255:n
1247:p
1222:D
1218:v
1197:.
1192:D
1188:v
1179:B
1164:n
1160:p
1153:n
1149:p
1141:p
1133:n
1129:n
1125:p
1121:n
1117:p
1067:n
1063:p
1055:n
1051:p
1029:n
1025:p
1009:B
1005:n
982:B
978:p
950:T
946:V
941:/
935:B
923:e
916:B
912:n
905:B
901:p
897:=
894:n
890:p
873:p
865:n
857:T
843:.
837:q
833:T
828:B
824:k
816:=
811:T
807:V
780:T
776:V
765:p
761:n
743:T
739:V
734:/
728:B
716:e
702:p
698:B
695:φ
691:n
687:p
676:p
672:n
664:n
660:p
656:n
652:p
573:)
567:(
562:)
558:(
544:.
518:)
512:(
507:)
503:(
489:.
450:.
440:V
417:D
413:v
387:D
383:i
360:D
356:r
332:,
318:V
314:=
309:D
305:v
299:|
291:D
287:i
276:D
272:v
258:=
253:D
249:r
152:n
148:n
116:n
112:p
20:)
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