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The most significant disadvantage of the method is an unstable speed of growth which happens due to heat exchange changes incurred by a growing boule size and which are difficult to predict. Due to this problem the crystals are typically grown at very slow speed in order to avoid unnecessary internal
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is dipped into the molten material. The seed crystal is slowly pulled upwards and may be rotated simultaneously. By precisely controlling the temperature gradients, rate of pulling and rate of temperature decrease, it is possible to produce a large, single-crystal, roughly cylindrical ingot from the
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The sizes of sapphire crystals grown by the
Kyropoulos method have increased dramatically since the 1980s. In the mid-2000s sapphire crystals up to 30 kg were developed which could yield 150 mm diameter substrates. By 2017, the largest reported sapphire grown by the Kyropoulos method was
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of the crucible is close to that of the final crystal, and the crystal grows downward into the crucible, rather than being pulled up and out of the crucible as in the
Czochralski method. The upward pulling of the seed is at a much slower rate than the downward growth of the crystal, and serves
479:, the orientation of the cylindrical axis of the boules grown by the Kyropoulos method is perpendicular to the orientation required for deposition of GaN on the LED substrates. This means that cores must be drilled through the sides of the boule before being sliced into
406:
The
Kyropoulos method is characterized by smaller temperature gradients at the crystallization front than the Czochralski method. Like the Czochralski method, the crystal grows free of any external mechanical shaping forces, and thus has few
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to determine the growth rate, although precise measurements are complicated by the changing and imperfect shape of the crystal diameter, the unknown convex shape of the solid-liquid interface, and these features' interaction with
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555:"Evolution and Application of the Kyropoulos Crystal Growth Method", David F. Bliss, in "50 Years of Progress in Crystal Growth: A Reprint Collection", Ed. Robert Feigelson, Elsevier, 2005
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As of 2017 the leading manufacturers of blue and white LEDs used 150 mm diameter sapphire substrates, with some manufacturers still using 100 mm, and 2 inch substrates.
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The major advantages include technical simplicity of the process and possibility to grow crystals with large sizes (≥30 cm). The method also shows low dislocation density.
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Single crystal sapphire boule grown by
Kyropoulos method. Approximately 200 mm diameter and approximately 30 kg. (A second boule is visible in the background.)
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Dobrovinskaya, Elena R., Leonid A. Lytvynov, and
Valerian Pishchik. Sapphire: material, manufacturing, applications. Springer Science & Business Media, 2009.
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In contrast with the
Czochralski method, the Kyropoulos technique crystallizes the entire feedstock volume into the boule. The size and
224:
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153:
787:
Bruni, Frank J. (11 September 2014). "Crystal growth of sapphire for substrates for high-brightness, light emitting diodes".
749:"Status Of the Sapphire Industry." Eric Virey. Yole-CIOE Sapphire Forum, Shenzhen, August 31st 2015. Yole Development. p. 32.
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Duffar, Thierry; Sen, Gourav; Stelian, Carmen; Baruchel, José; Tran
Caliste, Thu Nhi; Barthalay, Nicolas.
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Winkler, Jan; Neubert, Michael (2015). "Automation of
Crystal Growth from Melt". In Rudolph, Peter (ed.).
701:. Kharkiv, Ukraine: Вісник національного технічного университету "ХПІ" №15 (1058). 2014. pp. 3–11.
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crystals for precision optics. The method was a response to the limited boule sizes attainable by the
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483:. This means the as-grown boules have a significantly larger diameter than the resulting wafers.
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until the entire melt has solidified. Hanging the seed from a weight sensor can provide
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The
Kyropoulos method was applied to sapphire crystal growth in the 1970s in the
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Currently the method is used by several companies around the world to produce
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The growth rate is controlled by slowly decreasing the temperature of the
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Kyropoulos, S. (1926). "Ein
Verfahren zur Herstellung großer Kristalle".
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760:"Monocrystal introduced world's first 350 kg KY sapphire crystal"
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The largest application of the Kyropoulos method is to grow large
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350 kg, and could produce 300 mm diameter substrates.
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Method of bulk crystal growth used to obtain single crystals
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661:(2nd ed.). Elsevier B.V. pp. 1176–1178.
574:Zeitschrift für Anorganische und Allgemeine Chemie
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715:Kyropoulos Crystal Growth Presentation
415:. This process can be performed in an
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184:Shaping processes in crystal growth
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826:Crystal growth technique summaries
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358:crucible.) A precisely oriented
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154:Fractional crystallization
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607:[Kyropoulos method].
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342:The feedstock is melted in a
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511:Laser-heated pedestal growth
174:Laser-heated pedestal growth
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725:. p. 4. Archived from
496:Bridgman–Stockbarger method
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164:Hydrothermal synthesis
129:Bridgman–Stockbarger method
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659:Handbook of Crystal Growth
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856:Methods of crystal growth
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134:Van Arkel–de Boer process
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586:10.1002/zaac.19261540129
288:The method is named for
159:Fractional freezing
501:Monocrystalline silicon
460:and optics industries.
371:primarily to shape the
266:single crystal sapphire
139:Czochralski method
801:10.1002/crat.201400230
472:Because of sapphire's
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317:methods at the time.
249:, is a method of bulk
116:Methods and technology
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846:Industrial processes
841:Semiconductor growth
419:atmosphere, such as
375:of the solid-liquid
272:for the manufacture
247:Kyropoulos technique
241:, also known as the
108:Single crystal
88:Crystal growth
605:"МЕТОД КИРОПУЛОСА"
516:Micro-pulling-down
506:Float-zone silicon
403:within the melt.
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307:alkali earth metal
179:Micro-pulling-down
477:crystal structure
239:Kyropoulos method
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169:Kyropoulos method
98:Seed crystal
93:Recrystallization
62:Crystal structure
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194:Verneuil method
83:Crystallization
34:Crystallization
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199:Zone melting
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49:Fundamentals
795:: 133–142.
767:Monocrystal
580:: 308–313.
474:anisotropic
458:electronics
448:Application
311:Czochralski
293: [
149:Flux method
835:Categories
772:16 January
736:2019-04-29
643:2019-04-29
614:2019-04-29
561:0080489931
545:0387856943
522:References
431:Advantages
401:convection
356:molybdenum
330:The method
270:substrates
67:Nucleation
18:Kyropoulos
444:defects.
377:interface
243:KY method
851:Crystals
809:93605097
629:"Growth"
490:See also
456:for the
454:sapphire
411:and low
392:feedback
373:meniscus
352:tungsten
344:crucible
315:Verneuil
296:Wikidata
75:Concepts
388:furnace
363:melt.
284:History
276:-based
144:Epitaxy
57:Crystal
807:
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559:
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481:wafers
425:vacuum
262:boules
124:Boules
805:S2CID
763:(PDF)
730:(PDF)
719:(PDF)
699:(PDF)
421:argon
417:inert
299:]
774:2018
671:ISBN
557:ISBN
541:ISBN
399:and
379:via
313:and
305:and
278:LEDs
237:The
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663:doi
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