247:
crystal lattice of each material. For most epitaxial growths, the new layer is usually crystalline and each crystallographic domain of the overlayer must have a well-defined orientation relative to the substrate crystal structure. Epitaxy can involve single-crystal structures, although grain-to-grain epitaxy has been observed in granular films. For most technological applications, single-domain epitaxy, which is the growth of an overlayer crystal with one well-defined orientation with respect to the substrate crystal, is preferred. Epitaxy can also play an important role while growing superlattice structures.
1030:
1022:
878:
799:
equilibrium between dissolution and deposition, the deposition of the semiconductor crystal on the substrate is relatively fast and uniform. The most used substrate is indium phosphide (InP). Other substrates like glass or ceramic can be applied for special applications. To facilitate nucleation, and to avoid tension in the grown layer the thermal expansion coefficient of substrate and grown layer should be similar.
861:. The concentration of impurity in the gas phase determines its concentration in the deposited film. Doping can also be achieved by a site-competition technique, where the growth precursor ratios are tuned to enhance the incorporation of vacancies, specific dopant species or vacant-dopant clusters into the lattice. Additionally, the high temperatures at which epitaxy is performed may allow dopants to
574:
565:. Manufacturing issues include control of the amount and uniformity of the deposition's resistivity and thickness, the cleanliness and purity of the surface and the chamber atmosphere, the prevention of the typically much more highly doped substrate wafer's diffusion of dopant to the new layers, imperfections of the growth process, and protecting the surfaces during manufacture and handling.
635:
827:
growth. The annealing step used to recrystallize or heal silicon layers amorphized during ion implantation is also considered to be a type of solid phase epitaxy. The impurity segregation and redistribution at the growing crystal-amorphous layer interface during this process is used to incorporate low-solubility dopants in metals and silicon.
818:. The process has been used to create silicon for thin-film solar cells and far-infrared photodetectors. Temperature and centrifuge spin rate are used to control layer growth. Centrifugal LPE has the capability to create dopant concentration gradients while the solution is held at constant temperature.
541:
involves epitaxial growth between the grains of a multicrystalline epitaxial and seed layer. This can usually occur when the seed layer only has an out-of-plane texture but no in-plane texture. In such a case, the seed layer consists of grains with different in-plane textures. The epitaxial overlayer
303:
is a kind of epitaxy performed with materials that are different from each other. In heteroepitaxy, a crystalline film grows on a crystalline substrate or film of a different material. This technology is often used to grow crystalline films of materials for which crystals cannot otherwise be obtained
274:
of the film aligning with the index of the substrate. In the simplest case, the epitaxial layer can be a continuation of the same semiconductor compound as the substrate; this is referred to as homoepitaxy. Otherwise, the epitaxial layer will be composed of a different compound; this is referred to
269:
One of the main commercial applications of epitaxial growth is in the semiconductor industry, where semiconductor films are grown epitaxially on semiconductor substrate wafers. For the case of epitaxial growth of a planar film atop a substrate wafer, the epitaxial film's lattice will have a specific
1200:
were small enough to fit into a truly close-packed structure of oxygen anions then the spacing between the nearest neighbour oxygen sites would be the same for both species. The radius of the oxygen ion, however, is only 1.36 Ă
and the Fe cations are big enough to cause some variations. The Fe radii
798:
Liquid-phase epitaxy (LPE) is a method to grow semiconductor crystal layers from the melt on solid substrates. This happens at temperatures well below the melting point of the deposited semiconductor. The semiconductor is dissolved in the melt of another material. At conditions that are close to the
246:
layers are formed with one or more well-defined orientations with respect to the crystalline seed layer. The deposited crystalline film is called an epitaxial film or epitaxial layer. The relative orientation(s) of the epitaxial layer to the seed layer is defined in terms of the orientation of the
826:
Solid-phase epitaxy (SPE) is a transition between the amorphous and crystalline phases of a material. It is usually produced by depositing a film of amorphous material on a crystalline substrate, then heating it to crystallize the film. The single-crystal substrate serves as a template for crystal
517:
is larger than that, the film experiences a volumetric strain that builds with each layer until a critical thickness. With increased thickness, the elastic strain in the film is relieved by the formation of dislocations, which can become scattering centers that damage the quality of the structure.
911:
Sometimes many separate crystals form the overgrowth on a single substrate, and then if there is epitaxy all the overgrowth crystals will have a similar orientation. The reverse, however, is not necessarily true. If the overgrowth crystals have a similar orientation there is probably an epitaxic
603:
In the VW growth regime, the epitaxial film grows out of 3D nuclei on the growth surface. In this mode, the adsorbate-adsorbate interactions are stronger than adsorbate-surface interactions, leading to island formation by local nucleation and the epitaxial layer is formed when the islands join.
580:. Cross-section views of the three primary modes of thin-film growth including (a) VolmerâWeber (VW: island formation), (b) Frankâvan der Merwe (FM: layer-by-layer), and (c) StranskiâKrastanov (SK: layer-plus-island). Each mode is shown for several different amounts of surface coverage, Î.
689:
where (g) and (s) represent gas and solid phases, respectively. This reaction is reversible, and the growth rate depends strongly upon the proportion of the two source gases. Growth rates above 2 micrometres per minute produce polycrystalline silicon, and negative growth rates
1117:
plane of hematite (perpendicular to the c axis). In epitaxy these directions tend to line up with each other, resulting in the axis of the rutile overgrowth being parallel to the c axis of hematite, and the c axis of rutile being parallel to one of the axes of hematite.
467:
of the film and the substrate. The film and substrate could have similar lattice spacings but also different thermal expansion coefficients. If a film is grown at a high temperature, it can experience large strains upon cooling to room temperature. In reality,
614:
Practical epitaxial growth, however, takes place in a high supersaturation regime, away from thermodynamic equilibrium. In that case, the epitaxial growth is governed by adatom kinetics rather than thermodynamics, and 2D step-flow growth becomes dominant.
286:
is a kind of epitaxy performed with only one material, in which a crystalline film is grown on a substrate or film of the same material. This technology is often used to grow a more pure film than the substrate and to fabricate layers with different
2041:; Samperi, S. A.; Beeman, Jeffrey W.; Haller, Eugene E. (8 February 2002). Strojnik, Marija; Andresen, Bjorn F. (eds.). "Liquid phase epitaxy centrifuge for growth of ultrapure gallium arsenide for far-infrared photoconductors".
534:
is a process in which the heteroepitaxial film is growing vertically and laterally simultaneously. In 2D crystal heterostructure, graphene nanoribbons embedded in hexagonal boron nitride give an example of pendeo-epitaxy.
610:
The SK mode is a combination of VW and FM modes. In this mechanism, the growth initiates in the FM mode, forming 2D layers, but after reaching a critical thickness, enters a VW-like 3D island growth regime.
1193:(a plane that symmetrically "cuts off" a corner of a cube). The hematite structure is based on close-packed oxygen anions stacked in an AB-AB sequence, which results in a crystal with hexagonal symmetry.
405:
40:
2196:
Zhang, Xiankun; Gao, Li; Yu, Huihui; Liao, Qingliang; Kang, Zhuo; Zhang, Zheng; Zhang, Yue (20 July 2021). "Single-Atom
Vacancy Doping in Two-Dimensional Transition Metal Dichalcogenides".
1013:
parameters, a = 8.16 Ă
, b = 12.87 Ă
, c = 7.11 Ă
, Îą = 93.45°, β = 116.4°, Îł = 90.28° for albite and a = 8.5784 Ă
, b = 12.96 Ă
, c = 7.2112 Ă
, ι = 90.3°, β = 116.05°, γ = 89° for microcline.
528:
is a process similar to heteroepitaxy except that thin-film growth is not limited to two-dimensional growth; the substrate is similar only in structure to the thin-film material.
495:
339:
Heteroepitaxy occurs when a film of different composition and/or crystalline films grown on a substrate. In this case, the amount of strain in the film is determined by the
515:
1977:
2153:
Larkin, David J.; Neudeck, Philip G.; Powell, J. Anthony; Matus, Lawrence G. (26 September 1994). "Site-competition epitaxy for superior silicon carbide electronics".
2239:
Holmes-Hewett, W. F. (16 August 2021). "Electronic structure of nitrogen-vacancy doped SmN: Intermediate valence and 4f transport in a ferromagnetic semiconductor".
461:
434:
2118:
Custer, J.S.; Polman, A.; Pinxteren, H. M. (15 March 1994). "Erbium in crystal silicon: Segregation and trapping during solid phase epitaxy of amorphous silicon".
915:
Some authors consider that overgrowths of a second generation of the same mineral species should also be considered as epitaxy, and this is common terminology for
542:
then creates specific textures along each grain of the seed layer, due to lattice matching. This kind of epitaxial growth doesn't involve single-crystal films.
522:
systems thanks to the additional energy caused by de deformation. A very popular system with great potential for microelectronic applications is that of SiâGe.
698:
byproduct is present. (Hydrogen chloride may be intentionally added to etch the wafer.) An additional etching reaction competes with the deposition reaction:
297:
is a process similar to homoepitaxy except that the thin-film growth is not limited to two-dimensional growth. Here the substrate is the thin-film material.
607:
In the FM growth mode, adsorbate-surface and adsorbate-adsorbate interactions are balanced, which promotes 2D layer-by-layer or step-flow epitaxial growth.
1346:
K, Prabahar (26 October 2020). "Grain to Grain
Epitaxy-Like Nano Structures of (Ba,Ca)(ZrTi)O3/ CoFe2O4 for MagnetoâElectric Based Devices".
1814:
A. Y. Cho, "Growth of III\âV semiconductors by molecular beam epitaxy and their properties," Thin Solid Films, vol. 100, pp. 291â317, 1983.
2006:
Tenth E.C. Photovoltaic Solar Energy
Conference: Proceedings of the International Conference, held at Lisbon, Portugal, 8â12 April 1991
2647:
222:
2405:
Acta
Crystallographica Section A Crystal Physics, Diffraction, Theoretical and General Crystallography Volume 33, Part 4 (July 1977)
1824:
Cheng, K. Y. (November 1997). "Molecular beam epitaxy technology of III-V compound semiconductors for optoelectronic applications".
755:
The reaction chamber where this process takes place may be heated by lamps located outside the chamber. A common technique used in
924:
786:, in which precursor gases are alternatively pulsed into a chamber, leading to atomic monolayer growth by surface saturation and
1314:
857:
in the source gas, liberated by evaporation or wet etching of the surface, may also diffuse into the epitaxial layer and cause
348:
151:
2592:
2456:
1555:
1447:
2533:
Waldmann, T. (2012). "The role of surface defects in large organic molecule adsorption: substrate configuration effects".
1754:
Encyclopedia of
Materials: Science and Technology, Sect. 1.9, Physical Properties of Thin Films and Artificial Multilayers
1077:
Some pairs of minerals that are not related structurally or compositionally may also exhibit epitaxy. A common example is
181:
1801:
2657:
1785:
1638:
Chen, Lingxiu; Wang, Haomin; Tang, Shujie (2017). "Edge control of graphene domains grown on hexagonal boron nitride".
317:
2095:
2014:
1953:
1913:
1237:. Indeed, epitaxy is the only affordable method of high quality crystal growth for many semiconductor materials. In
779:, on the other hand, is an ultra-high vacuum process that uses gas phase precursors to generate the molecular beam.
1046:
126:
2490:
Waldmann, T. (2011). "Growth of an oligopyridine adlayer on Ag(100) â A scanning tunnelling microscopy study".
1420:
1257:
1209:(4 or 8). Nevertheless, the O spacings are similar for the two minerals hence hematite can readily grow on the
589:
2642:
1384:
Hwang, Cherngye (30 September 1998). "Imaging of the grain-to-grain epitaxy in NiFe/FeMn thin-film couples".
947:
595:
215:
131:
90:
1038:
905:
894:
890:
171:
550:
471:
2355:
White, John S.; Richards, R. Peter (17 February 2010). "Let's Get It Right: EpitaxyâA Simple
Concept?".
889:
In mineralogy, epitaxy is the overgrowth of one mineral on another in an orderly way, such that certain
923:
level on a semiconductor substrate of the same material. For naturally produced minerals, however, the
691:
2611:
1234:
1110:
1098:
647:
643:
2652:
999:
935:
208:
500:
1700:
1102:
814:. Centrifugally formed film growth is a process used to form thin layers of materials by using a
659:
333:
288:
1289:
920:
838:
831:
760:
756:
558:
161:
2004:
1943:
1903:
1481:"Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride"
2085:
1775:
1304:
1284:
776:
655:
2542:
2499:
2364:
2310:
2248:
2162:
2127:
2050:
1868:
1712:
1657:
1594:
1502:
1319:
783:
519:
439:
412:
242:
means "on top ofâ) refers to a type of crystal growth or material deposition in which new
8:
1294:
1206:
305:
156:
2621:
2546:
2503:
2368:
2314:
2252:
2166:
2131:
2054:
1872:
1716:
1661:
1598:
1506:
1189:
stacked in an ABC-ABC sequence. In this packing the close-packed layers are parallel to
304:
and to fabricate integrated crystalline layers of different materials. Examples include
2388:
2334:
2272:
2221:
2066:
1939:
1681:
1647:
1615:
1584:
1572:
1523:
1492:
1480:
1363:
1299:
176:
136:
2588:
2558:
2515:
2452:
2392:
2380:
2338:
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2264:
2225:
2213:
2178:
2091:
2070:
2010:
1949:
1909:
1884:
1880:
1841:
1781:
1780:(2nd ed.). Chichester, West Sussex, England: John Wiley & Sons. p. 23.
1673:
1620:
1551:
1528:
1443:
1416:
1367:
908:
are clear then the epitaxic relationship can be deduced just by a visual inspection.
695:
638:
Figure 1: Basic processes inside the growth chambers of a) MOVPE, b) MBE, and c) CBE.
166:
59:
1685:
1202:
650:
methods that deliver the precursors to the substrate in gaseous state. For example,
2550:
2507:
2435:
Nesse, William (2000). Introduction to
Mineralogy. Oxford University Press. Page 79
2372:
2318:
2256:
2205:
2170:
2135:
2087:
Chemical
Physics of Thin Film Deposition Processes for Micro- and Nano-Technologies
2058:
1876:
1833:
1720:
1665:
1610:
1602:
1518:
1510:
1463:
1393:
1355:
1249:
811:
729:
source gases. For instance, the silane reaction occurs at 650 °C in this way:
562:
464:
321:
100:
39:
1724:
2615:
2580:
2472:
2446:
1437:
1238:
726:
624:
309:
191:
121:
80:
31:
2260:
270:
orientation relative to the substrate wafer's crystalline lattice, such as the
2209:
1324:
1269:
1253:
1230:
930:
Another man-made application of epitaxy is the making of artificial snow using
904:
If the crystals of both minerals are well formed so that the directions of the
722:
291:
levels. In academic literature, homoepitaxy is often abbreviated to "homoepi".
255:
186:
105:
85:
2415:
2376:
2322:
2636:
2416:"FMF - Friends of Minerals Forum, discussion and message board :: Index"
2384:
2330:
2268:
2217:
2182:
1888:
1845:
1274:
931:
916:
802:
Centrifugal liquid-phase epitaxy is used commercially to make thin layers of
787:
772:
1859:
Tsang, W.T. (1989). "From chemical vapor epitaxy to chemical beam epitaxy".
1749:
1573:"Oriented graphene nanoribbons embedded in hexagonal boron nitride trenches"
1186:
1029:
2562:
2519:
2038:
1802:"Applied Materials Series 7600 Epitaxial Reactor System - the Chip History"
1677:
1624:
1532:
1359:
1218:
1214:
1210:
1190:
1114:
1106:
271:
196:
95:
2037:
Katterloher, Reinhard O.; Jakob, Gerd; Konuma, Mitsuharu; Krabbe, Alfred;
744:
VPE is sometimes classified by the chemistry of the source gases, such as
2146:
1034:
1021:
1003:
927:(IMA) definition requires that the two minerals be of different species.
877:
745:
146:
1905:
Liquid Phase
Epitaxy of Electronic, Optical and Optoelectronic Materials
1606:
1025:
Rutile on hematite, from Novo
Horizonte, Bahia, Northeast Region, Brazil
782:
Another widely used technique in microelectronics and nanotechnology is
2554:
2511:
2445:
Klein, Cornelis; Hurlbut, Cornelius Searle; Dana, James Dwight (1993).
1942:; Parkin, S. S. P.; Dobson, P. J.; Neave, J. H.; Arrott, A. S. (2013).
1669:
1514:
1246:
1105:, but there are directions of similar spacing between the atoms in the
1062:
975:
815:
775:; practically free space) to the substrate and start epitaxial growth.
642:
Homoepitaxial growth of semiconductor thin films are generally done by
584:
Heteroepitaxial growth is classified into three primary growth modes--
64:
2062:
1467:
2174:
2139:
2003:
Luque, A.; Sala, G.; Palz, Willeke; Santos, G. dos; Helm, P. (2012).
1837:
1701:"Phänomenologische Theorie der Kristallabscheidung an Oberflächen. I"
1397:
1309:
1242:
1151:
1054:
1010:
893:
of the two minerals are aligned. This occurs when some planes in the
862:
846:
807:
764:
20:
1652:
1589:
1497:
1279:
1127:
1086:
1066:
850:
663:
329:
313:
1045:
Minerals that have the same composition but different structures (
897:
of the overgrowth and the substrate have similar spacings between
841:
during deposition by adding impurities to the source gas, such as
1197:
919:
scientists who induce epitaxic growth of a film with a different
803:
763:(MBE). In this method, a source material is heated to produce an
546:
325:
243:
54:
1183:
1078:
1050:
951:
854:
842:
768:
718:
1439:
Epitaxy of Semiconductors: Introduction to Physical Principles
573:
2189:
898:
882:
749:
2626:
2036:
1948:. Springer Science & Business Media. pp. 174â176.
554:
2608:
1945:
Thin Film Growth Techniques for Low-Dimensional Structures
634:
400:{\displaystyle \varepsilon ={\frac {a_{f}-a_{s}}{a_{f}}}}
2152:
1938:
1442:. Springer Science & Business Media. pp. 4â6.
865:
into the growing layer from other layers in the wafer (
2117:
2090:. Springer Science & Business Media. p. 45.
1462:
M. Schreck et al., Appl. Phys. Lett. 78, 192 (2001);
503:
474:
442:
415:
351:
938:
silver iodide and ice have similar cell dimensions.
767:
beam of particles, which travel through a very high
2587:(2nd ed.). Upper Saddle River: Prentice Hall.
2002:
1182:. The magnetite structure is based on close-packed
518:Heteroepitaxy is commonly used to create so-called
19:"Epitaxis" redirects here. Not to be confused with
1479:Tang, Shujie; Wang, Haomin; Wang, Huishan (2015).
509:
489:
455:
428:
399:
1692:
1049:) may also have epitaxic relations. Examples are
2634:
2444:
2232:
1777:An Introduction To Semiconductor Microtechnology
1767:
1743:
1741:
1037:after magnetite, with terraced epitaxial faces.
16:Crystal growth process relative to the substrate
2204:(8). American Chemical Society (ACS): 655â668.
2030:
1969:
881:Rutile epitaxial on hematite nearly 6 cm long.
2247:(7). American Physical Society (APS): 075124.
2195:
1978:"Speedy production of silicon for solar cells"
2618:: a central forum for the epitaxy-communities
2354:
2238:
1934:
1932:
1738:
1571:Chen, Lingxiu; He, Li; Wang, Huishan (2017).
1201:vary from 0.49 Ă
to 0.92 Ă
, depending on the
950:) may have epitaxic relations. An example is
557:(CMOS), but it is particularly important for
216:
1637:
1478:
2585:Introduction to Microelectronic Fabrication
2077:
1975:
1908:. John Wiley & Sons. pp. 134â135.
1773:
1435:
1410:
1929:
1901:
1895:
1570:
1545:
223:
209:
1996:
1852:
1651:
1614:
1588:
1522:
1496:
2532:
2489:
1121:
1109:plane of rutile (perpendicular to the a
1028:
1020:
876:
633:
572:
555:complementary metalâoxideâsemiconductors
2300:
2083:
1429:
1411:Christensen, Morten Jagd (April 1997).
1379:
1377:
1016:
946:Minerals that have the same structure (
925:International Mineralogical Association
666:at approximately 1200 to 1250 °C:
497:is necessary for obtaining epitaxy. If
2635:
2578:
1550:. Elsevier Science. pp. 513â588.
1341:
1339:
1315:Vertical-cavity surface-emitting laser
1241:, epitaxy is used to create and study
941:
266:(ĎΏΞΚĎ), meaning "an ordered manner".
2431:
2429:
2350:
2348:
2296:
2294:
2292:
2290:
2288:
2286:
2043:Infrared Spaceborne Remote Sensing IX
1976:Christensen, Arnfinn (29 July 2015).
1902:Capper, Peter; Mauk, Michael (2007).
1858:
1823:
1747:
1698:
1413:Epitaxy, Thin films and Superlattices
1383:
1072:
912:relationship, but it is not certain.
2420:www.mineral-forum.com/message-board/
1374:
2629:: a specialized software in epitaxy
2535:Physical Chemistry Chemical Physics
2492:Physical Chemistry Chemical Physics
2438:
1336:
549:-based manufacturing processes for
490:{\displaystyle \varepsilon <9\%}
182:Shaping processes in crystal growth
13:
2465:
2426:
2408:
2399:
2363:(2). Informa UK Limited: 173â176.
2345:
2309:(4). Informa UK Limited: 317â320.
2283:
1213:faces of magnetite, with hematite
484:
318:aluminium gallium indium phosphide
14:
2669:
2602:
2301:Rakovan, John (2006). "Epitaxy".
2161:(13). AIP Publishing: 1659â1661.
1774:Morgan, D. V.; Board, K. (1991).
1345:
2648:Semiconductor device fabrication
1705:Zeitschrift fĂźr Kristallographie
654:is most commonly deposited from
38:
2572:
2526:
2483:
2111:
1817:
1808:
1794:
1436:Udo W. Pohl (11 January 2013).
1224:
793:
152:Fractional crystallization
2198:Accounts of Materials Research
1631:
1564:
1539:
1472:
1456:
1404:
1258:scanning tunnelling microscopy
821:
629:
1:
1867:(1â4). Elsevier BV: 121â131.
1725:10.1524/zkri.1958.110.1-6.372
1546:F. Francis, Lorraine (2016).
1330:
1881:10.1016/0022-0248(89)90364-3
1415:. Risø National Laboratory.
934:, which is possible because
568:
551:bipolar junction transistors
510:{\displaystyle \varepsilon }
262:(áźĎÎŻ), meaning "above", and
172:Laser-heated pedestal growth
7:
2579:Jaeger, Richard C. (2002).
2261:10.1103/physrevb.104.075124
1748:Brune, H. (14 April 2009).
1263:
872:
162:Hydrothermal synthesis
127:BridgmanâStockbarger method
10:
2674:
2210:10.1021/accountsmr.1c00097
2120:Journal of Applied Physics
1386:Journal of Applied Physics
998:. Both these minerals are
837:An epitaxial layer can be
622:
618:
18:
2658:Methods of crystal growth
2377:10.1080/00357521003591165
2323:10.3200/rmin.81.4.317-320
2009:. Springer. p. 694.
1861:Journal of Crystal Growth
1235:semiconductor fabrication
830:
717:Silicon VPE may also use
648:physical vapor deposition
204:
132:Van Arkelâde Boer process
118:
113:
77:
72:
51:
46:
37:
30:
1245:and multilayer films of
694:) may occur if too much
278:
157:Fractional freezing
2155:Applied Physics Letters
1826:Proceedings of the IEEE
660:germanium tetrachloride
559:compound semiconductors
334:hexagonal boron nitride
137:Czochralski method
1360:10.1021/acsanm.0c02265
1290:Selective area epitaxy
1217:parallel to magnetite
1042:
1026:
886:
761:molecular beam epitaxy
757:compound semiconductor
639:
581:
539:Grain-to-grain epitaxy
511:
491:
457:
430:
401:
114:Methods and technology
1699:Bauer, Ernst (1958).
1577:Nature Communications
1485:Nature Communications
1305:Thermal laser epitaxy
1285:Quantum cascade laser
1122:Hematite on magnetite
1032:
1024:
906:crystallographic axes
880:
777:Chemical beam epitaxy
656:silicon tetrachloride
637:
576:
512:
492:
458:
456:{\displaystyle a_{s}}
431:
429:{\displaystyle a_{f}}
402:
324:(GaAs) or diamond or
2643:Thin film deposition
2622:Deposition processes
2614:9 March 2013 at the
2477:abulafia.mt.ic.ac.uk
2448:Manual of mineralogy
2357:Rocks & Minerals
2303:Rocks & Minerals
2084:Pauleau, Y. (2012).
1548:Materials Processing
1348:ACS Appl. Nano Mater
1320:Wake Shield Facility
1047:polymorphic minerals
1017:Polymorphic minerals
784:atomic layer epitaxy
501:
472:
440:
413:
349:
2547:2012PCCP...1410726W
2504:2011PCCP...1320724W
2369:2010RoMin..85..173W
2315:2006RoMin..81..317R
2253:2021PhRvB.104g5124H
2167:1994ApPhL..65.1659L
2132:1994JAP....75.2809C
2055:2002SPIE.4486..200K
1873:1989JCrGr..95..121T
1717:1958ZK....110..372B
1662:2017arXiv170601655C
1607:10.1038/ncomms14703
1599:2017NatCo...814703C
1507:2015NatCo...6.6499T
1392:(6115): 6115â6117.
1354:(11): 11098â11106.
1295:Silicon on sapphire
1229:Epitaxy is used in
1207:coordination number
1205:(2+ or 3+) and the
1126:Another example is
1009:, and with similar
948:isomorphic minerals
942:Isomorphic minerals
591:Frankâvan der Merwe
545:Epitaxy is used in
306:silicon on sapphire
106:Single crystal
86:Crystal growth
2555:10.1039/C2CP40800G
2512:10.1039/C1CP22546D
1670:10.1039/C7NR02578E
1515:10.1038/ncomms7499
1300:Single event upset
1254:single crystalline
1073:Rutile on hematite
1043:
1027:
891:crystal directions
887:
752:(MOVPE or MOCVD).
640:
597:StranskiâKrastanov
582:
553:(BJTs) and modern
507:
487:
453:
426:
397:
275:as heteroepitaxy.
177:Micro-pulling-down
2594:978-0-201-44494-0
2581:"Film Deposition"
2458:978-0-471-57452-1
2241:Physical Review B
2063:10.1117/12.455132
1982:sciencenordic.com
1832:(11): 1694â1714.
1557:978-0-12-385132-1
1468:10.1063/1.1337648
1449:978-3-642-32970-8
1250:organic molecules
696:hydrogen chloride
465:lattice constants
395:
233:
232:
167:Kyropoulos method
96:Seed crystal
91:Recrystallization
60:Crystal structure
2665:
2598:
2567:
2566:
2541:(30): 10726â31.
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2524:
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2186:
2175:10.1063/1.112947
2150:
2144:
2143:
2140:10.1063/1.356173
2115:
2109:
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2081:
2075:
2074:
2039:Haegel, Nancy M.
2034:
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2023:
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1994:
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1991:
1989:
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1964:
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1940:Farrow, R. F. C.
1936:
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1731:
1711:(1â6): 372â394.
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1179:
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1138:
1101:and hematite is
1008:
997:
996:
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986:
973:
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962:
812:gallium arsenide
750:metalorganic VPE
563:gallium arsenide
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322:gallium arsenide
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101:Protocrystalline
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27:
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2653:Crystallography
2633:
2632:
2616:Wayback Machine
2605:
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2527:
2498:(46): 20724â8.
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2473:"Shannon Radii"
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727:trichlorosilane
713:
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632:
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625:Epitaxial wafer
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310:gallium nitride
281:
254:comes from the
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192:Verneuil method
81:Crystallization
32:Crystallization
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17:
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5:
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2113:
2101:. Retrieved
2086:
2079:
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2032:
2020:. Retrieved
2005:
1998:
1986:. Retrieved
1981:
1971:
1959:. Retrieved
1944:
1919:. Retrieved
1904:
1897:
1864:
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1854:
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1757:. Retrieved
1753:
1728:. Retrieved
1708:
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1431:
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1406:
1389:
1385:
1351:
1347:
1228:
1225:Applications
1195:
1125:
1097:. Rutile is
1076:
1069:, both ZnS.
1044:
945:
929:
914:
910:
903:
888:
866:
858:
836:
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794:Liquid-phase
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586:VolmerâWeber
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408:
345:
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300:
299:
295:Homotopotaxy
294:
293:
283:
282:
272:Miller index
268:
263:
259:
251:
249:
239:
235:
234:
197:Zone melting
141:
47:Fundamentals
25:
2609:epitaxy.net
2126:(6): 2809.
2049:: 200â209.
1646:(32): 1â6.
1041:, Argentina
1035:pseudomorph
1004:space group
822:Solid-phase
748:(HVPE) and
746:hydride VPE
630:Vapor-phase
284:Homoepitaxy
244:crystalline
147:Flux method
2637:Categories
1653:1706.01655
1590:1703.03145
1498:1503.02806
1422:8755022987
1331:References
1113:) and the
1099:tetragonal
1063:sphalerite
1057:, both FeS
976:microcline
859:autodoping
816:centrifuge
765:evaporated
759:growth is
623:See also:
65:Nucleation
2451:. Wiley.
2393:128758902
2385:0035-7529
2339:219714821
2331:0035-7529
2277:238671328
2269:2469-9950
2226:237642245
2218:2643-6728
2183:0003-6951
2103:3 October
2071:137003113
2022:3 October
1988:3 October
1961:3 October
1921:3 October
1889:0022-0248
1846:0018-9219
1640:Nanoscale
1368:228995039
1310:Thin film
1243:monolayer
1152:magnetite
1055:marcasite
1033:Hematite
1011:unit cell
1000:triclinic
936:hexagonal
847:phosphine
808:germanium
737:â Si + 2H
594:(FM) and
569:Mechanism
505:ε
485:%
476:ε
372:−
353:ε
312:(GaN) on
250:The term
21:Epistaxis
2612:Archived
2563:22751288
2520:21952443
1686:11602229
1678:28580985
1625:28276532
1533:25757864
1280:Nano-RAM
1264:See also
1247:adsorbed
1128:hematite
1103:trigonal
1087:hematite
1067:wurtzite
1039:La Rioja
895:lattices
885:, Brazil
873:Minerals
851:diborane
664:hydrogen
644:chemical
578:Figure 1
561:such as
463:are the
330:graphene
314:sapphire
238:(prefix
73:Concepts
2543:Bibcode
2500:Bibcode
2365:Bibcode
2311:Bibcode
2249:Bibcode
2163:Bibcode
2128:Bibcode
2051:Bibcode
1869:Bibcode
1713:Bibcode
1658:Bibcode
1616:5347129
1595:Bibcode
1524:4382696
1503:Bibcode
1233:and in
1198:cations
1196:If the
1002:, with
863:diffuse
855:Dopants
804:silicon
710:â 2SiCl
692:etching
652:silicon
619:Methods
547:silicon
520:bandgap
336:(hBN).
326:iridium
252:epitaxy
236:Epitaxy
142:Epitaxy
55:Crystal
2591:
2561:
2518:
2455:
2391:
2383:
2337:
2329:
2275:
2267:
2224:
2216:
2181:
2094:
2069:
2013:
1952:
1912:
1887:
1844:
1784:
1684:
1676:
1623:
1613:
1554:
1531:
1521:
1446:
1419:
1366:
1203:charge
1187:anions
1184:oxygen
1079:rutile
1061:, and
1051:pyrite
955:NaAlSi
952:albite
921:doping
843:arsine
832:Doping
810:, and
769:vacuum
725:, and
719:silane
682:+ 4HCl
662:) and
600:(SK).
588:(VW),
409:Where
328:, and
289:doping
258:roots
122:Boules
2389:S2CID
2335:S2CID
2273:S2CID
2222:S2CID
2067:S2CID
1759:3 May
1730:3 May
1682:S2CID
1648:arXiv
1585:arXiv
1493:arXiv
1364:S2CID
1219:(111)
1215:(001)
1211:(111)
1191:(111)
1115:(001)
1107:(100)
979:KAlSi
899:atoms
883:Bahia
849:, or
839:doped
436:and
279:Types
264:taxis
256:Greek
2589:ISBN
2559:PMID
2516:PMID
2453:ISBN
2381:ISSN
2327:ISSN
2265:ISSN
2214:ISSN
2179:ISSN
2105:2017
2092:ISBN
2047:4486
2024:2017
2011:ISBN
1990:2017
1963:2017
1950:ISBN
1923:2017
1910:ISBN
1885:ISSN
1842:ISSN
1782:ISBN
1761:2022
1732:2022
1674:PMID
1621:PMID
1552:ISBN
1529:PMID
1444:ISBN
1417:ISBN
1111:axis
1065:and
1053:and
771:(10
712:2(g)
706:+ Si
704:4(g)
702:SiCl
678:â Si
676:2(g)
674:+ 2H
672:4(g)
670:SiCl
658:(or
479:<
240:epi-
2551:doi
2508:doi
2373:doi
2319:doi
2257:doi
2245:104
2206:doi
2171:doi
2136:doi
2059:doi
1877:doi
1834:doi
1721:doi
1709:110
1666:doi
1611:PMC
1603:doi
1519:PMC
1511:doi
1464:doi
1394:doi
1356:doi
1252:on
1150:on
1085:on
1081:TiO
974:on
869:).
733:SiH
708:(s)
684:(g)
680:(s)
646:or
343:Ô:
332:on
260:epi
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2557:.
2549:.
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1059:2
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993:8
988:O
984:3
969:8
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960:3
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418:a
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380:s
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367:f
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210:v
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